JP2013539253A - モジュール及びその製造方法 - Google Patents
モジュール及びその製造方法 Download PDFInfo
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- JP2013539253A JP2013539253A JP2013521030A JP2013521030A JP2013539253A JP 2013539253 A JP2013539253 A JP 2013539253A JP 2013521030 A JP2013521030 A JP 2013521030A JP 2013521030 A JP2013521030 A JP 2013521030A JP 2013539253 A JP2013539253 A JP 2013539253A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 74
- 238000000034 method Methods 0.000 claims abstract description 28
- 238000009429 electrical wiring Methods 0.000 claims abstract description 6
- 238000007789 sealing Methods 0.000 claims description 13
- 238000001465 metallisation Methods 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 238000000465 moulding Methods 0.000 claims 2
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
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Abstract
本発明は,電気配線を有するキャリア基板(6)と,キャリア基板(6)上にフリップチップ実装された素子チップ(1)とを備えたモジュールを提案する。素子チップ(1)は,キャリア基板(6)側の素子チップ表面(2)に,素子構造体(3)と,支持フレーム(4)と,支持要素(5)とを備える。支持要素(5)は,素子構造(3)とキャリア基板(6)における電気配線とを電気的に接続し,支持要素(5)及び支持フレーム(4)は高さが一致している。更に本発明は,上記モジュールの製造方法を提案する。
【選択図】図3
【選択図】図3
Description
本発明は,キャリア基板上に素子チップをフリップチップ法で実装したモジュールに関する。
ここに「素子チップ」とは,表面に繊細な素子構造体が設けられたSAWフィルタチップを指す。このような素子構造体は機械的に敏感であり,例えば空洞部により保護可能である。そのために,例えば素子チップ用のハウジングを使用することができる。
この種の電子部品に関して,例えばドイツ特許第102006025162号明細書は,素子構造体を設けた素子チップを,バンプ接続に基づくフリップチップ法でキャリア基板上に実装し,その際に素子チップをキャリア基板に対して間隔を空けて配置する素子封止技術を開示している。キャリア基板の表面上にはフレームが形成され,このフレームは素子チップの表面に接するか又は狭い隙間を開けて,素子構造体を収める中空室を構成する。中空室は,外部に対して封止剤により密閉される。更に,素子チップを機械的に支持すると共に素子チップとキャリア基板とを電気的に接続する支持要素が設けられている。
更に,ドイツ特許出願公開102007025992号公報は,基板上に支持フレームを設けたMEMSパッケージを開示している。その代替的な実施形態においては,支持フレームがチップ自体に設けられる。素子チップとキャリア基板とは,バンプにより電気的に接続される。
本発明の課題は,製造が容易であり,チップ上に実装された電子素子を,別体のハウジングにより保護する必要のないモジュールを提供することである。
この課題は,請求項1に記載した特徴を有するモジュールにより解決される。また,請求項8は,本発明に係るモジュールの製造方法に関するものである。更に,本発明の好ましい実施形態は,従属請求項に記載したとおりである。
本発明は,フリップチップ法により単層又は多層のキャリア基板上に素子チップを実装したモジュールを提案するものである。素子チップにおけるキャリア基板側の表面には,素子構造体と,支持フレーム及び支持要素とが設けられている。更に,素子チップの素子構造体及びキャリア基板は,支持要素及び/又は支持フレームにより電気的に接続する。支持要素及び支持フレームを一つの共通プロセスステップで素子チップの表面上に形成することにより,支持要素及び支持フレームの高さを製造時に容易に一致させることができる。
本発明に係るモジュールにおいては,単一又は複数のプロセスステップにおいて1個又は複数個の素子チップをフリップチップ法でキャリア基板上に実装し,これら素子チップとキャリア基板とを電気的に接続し,チップとキャリア基板表面との間に密閉された中空室を形成することが可能である。キャリア基板上には,フリップチップ法で実装した素子チップに隣接させて,更なる電子部品を配置することができる。
素子チップ及びキャリア基板は,チップ表面に設けた支持要素により電気的に接続する。
本発明の一実施形態においては,支持フレームもキャリア基板に対して例えばハンダ接合により機械的に堅固に結合する。支持フレーム及びキャリア基板のハンダ接合は,主として支持フレームの機械的な固定に供されるものである。この場合,一般論としてはフレームを接地させることも可能である。
素子チップがキャリア基板と接続している場合,支持フレームが中空室を形成し,その中空室内で素子構造を外部からの影響に対して保護する。本発明において「素子構造体」とは,微小電気機械素子(MEMS素子)であり,及び/又は音波で動作する電気音響的な素子構造,例えばバルク音響波で動作する共振器又は音響表面弾性波で動作する変換器,いわゆるSAW変換器である。微小電気機械素子はセンサーやアクチュエータを含み,これらは機械的に敏感であるか,又はその機能面から封止状態で可動でなければならない。
電子部品をより確実に保護するため,封止層で広範囲に素子チップ及びモジュールキャリアを覆う。封止層は,例えばグロブ・トップ物質で構成する。これは,液状で取り扱い可能な熱硬化性樹脂,例えばエポキシ系樹脂を包含する。
好適には,支持要素及び支持フレームは実質的に金属製,特に銅製とする。支持要素及び支持フレームのキャリア基板側における端部には,ハンダ材料が更に設けられている。
本発明は,上述した構成を有するモジュールの製造方法にも関する。本発明に従い,支持フレーム及び支持要素は,素子チップのキャリア基板側の表面に,一つの共通プロセスステップで形成されるため,素子チップとキャリア基板の高さを一致させることができる。支持フレームと支持要素は互いに高さを調整し合い,キャリア基板の平坦な表面と接続し,密閉された中空室を形成する。素子チップはキャリア基板の上方でフリップチップ実装され,素子構造とキャリア基板の電気との間が,支持要素によって電気的に接続される。
キャリア基板は,集積電気配線を有している。更にキャリア基板は多層構造体で構成することができ,この場合には,対応する配線を実現するように構造化されたメタライゼーション層が,機械的に安定な電気絶縁材料からなる個々の層上,層間及び層下に設けられる。個々のメタライゼーション層は,好適には相互にオフセット配置されたスルーコネクションにより互いに結合する。その際に,キャリア基板の表面に形成された金属接合面と,キャリア基板の底面に配置された外部接点のための電気接点を形成する。
メタライゼーション層には,抵抗,インダクタンス,キャパシタンス等の電気的な受動素子を,回路又は回路部品と共に形成することが可能である。この回路は,素子チップと接続して協働させることが望ましい。
機械的に安定な材料としては,吸水性及びガス透過性が低く,熱膨張係数を適合させることのできる液晶ポリマー(LCP)等の高密度樹脂材料や,高温共焼成セラミック(HTCC)又は低温共焼成セラミック(LTCC)等のセラミックス材料が特に適している。
キャリア基板の上側における接合メタライゼーション構造体,特にアンダーバンプ・メタライゼーション構造体(UBM)は,ハンダ接合面又はボンディング面を有する。このメタライゼーション層の領域は,接合面又は接触面として構造化する。
本発明に係る製造方法においては,キャリア基板の表面上に,後のメタライゼーションのための金属成長層又はシード層を,例えば無電解法又はPVD法により積層する。この成長層の上に耐電解性のレジストを塗布し,支持フレーム及び支持要素の所望の構造に対応させて,例えばレーザーリソグラフ法により構造化する。未加工状態のキャリア基板において,マスクを介してフォトリソグラフにより露光することも可能である。
次のステップにおいて,成長層を電解的に,例えば銅の電解積層により増強する。更に,被覆層として銅の上に例えばニッケル保護層を積層することも可能である。
引き続いて平坦化工程を実行し,全体的な平坦面が形成されるまで電解レジスト及び増強された成長層の表面を除去する。その後,電解レジストを除去し,その下側に残った成長層をエッチングする。
平坦化により素子チップ上に,平坦な上面を有する支持フレーム及び支持要素が形成されるため,キャリア基板の同様に平坦な上面に対して素子チップ及び支持フレームを実質的に共面的に接合させることが可能である。
引き続いて,支持要素をキャリア基板に電気接続する。本発明の一実施形態においては,同一ステップで支持フレームをキャリア基板にハンダ接合する。素子チップ及びキャリア基板が支持要素によって電気的に互いに接続されると,同時に機械的な安定化が達成されると共に,支持フレーム,素子チップ及びキャリア基板の間の中空室が密閉される。この中空室内において素子構造が保護され,機能的に規定される変位又は振動のための充分なスペースが確保される。
キャリア基板上には,上述した素子チップに隣接させて,更なる電子部品を配置することも可能である。機械的な保護を更に強化するため,素子チップ及び更なる電子部品を共に封止層で覆うこともできる。その場合に封止層は,例えばグロブ・トップカバーで構成することができる。
以下,本発明を添付図面に基づいて更に詳述する。図面は,本発明の種々の実施形態を示す略図であって,等尺ではない点に留意されたい。
図1はベアチップ,いわゆるベアダイとして構成された素子チップ1を示す。この場合,図1に示す素子チップ1はSAWフィルタであり,素子チップの上側2に素子構造体3が設けられている。素子チップ1の上側2には,更に支持フレーム4及び支持要素5が設けられている。支持要素は,素子構造体の接合面上に位置させ,又は素子構造体と電気的に接続することができる。
支持フレーム4及び支持要素5は,共通のプロセスステップにおいて製造され,必要に応じて平坦化されるるために高さが互いに一致している。支持フレーム4及び支持要素5は,素子構造体3上から所定の高さで突出する。素子構造体3は,フレーム4内部に配置する。
図2は本発明に係るモジュールの結合前のプロセスステップ,即ち素子チップ1のボンディング又はハンダ接合前のプロセスステップにおける断面図を示す。素子チップ1は,後にキャリア基板6上にボンディング又はハンダ接合する。キャリア基板6は,単層又は多層構造とすることができる,キャリア基板6の表面7上には,接続面又は接触面8が形成される。
支持要素5及び支持フレーム4は,キャリア基板6の接続面又は接触面8と接続するよう素子チップ1上に配置されている。
支持要素5及び支持フレーム4は実質的に金属製,特に銅製とし,本実施形態ではキャリア基板6側の端部にハンダ材料9が配置されている。
図3はその後のプロセスステップにおけるモジュールを示す。このプロセスステップでは,素子チップ1がキャリア基板6にハンダ接合され,更に,素子チップ上に封止層10が設けられる。支持要素5と支持フレーム4をキャリア基板6にハンダ接合することにより,素子チップ1における素子構造体3とキャリア基板6とが電気的に接続される。更に,同一ステップにおいて,支持フレーム4,素子チップ1及びキャリア基板6の間に中空室11が形成される。中空室11内では,素子構造体3が外部からの影響に対して保護される。従って,本発明に係るモジュールにおいては,一つの共通プロセスステップにより,素子構造体3の機械的な保護と,素子構造体3に対する電気的接続を達成することが可能である。
本発明に係るモジュールにおいては,1個又は複数個のベアダイをキャリア基板6上にフリップチップ実装することが可能である。これにより,ベアの素子チップ1に対して別体のハウジングが省略可能であり,それにより実装密度がより高い電子部品をモジュールキャリア基板上に配置することができる。更に,ディスクリートな素子を表面実装プロセスによってキャリア基板上に実装することも可能である。
モジュール上には,機械的な保護手段としての封止層10が更に設けられている。封止層10は,ポリマー結合材,フィルム又は樹脂で構成し,例えばグロブ・トップ層として形成する。
1 素子チップ
2 素子チップ上側
3 素子構造体
4 支持フレーム
5 支持要素
6 キャリア基板
7 キャリア基板6の表面
8 接合又は接触面
9 ハンダ材料
10 封止層
11 中空室
2 素子チップ上側
3 素子構造体
4 支持フレーム
5 支持要素
6 キャリア基板
7 キャリア基板6の表面
8 接合又は接触面
9 ハンダ材料
10 封止層
11 中空室
Claims (15)
- 電気配線を設けたキャリア基板(6)と,
該キャリア基板(6)上にフリップチップ法で実装され,前記キャリア基板(6)側の上側(2)に素子構造体(3),支持フレーム(4)及び支持要素(5)を設けた素子チップ(1)とを備え,
該支持要素(5)により,前記素子構造体(3)と前記キャリア基板(6)における電気配線とが電気的に接続され,
前記支持要素(5)及び前記支持フレーム(4)は互いに高さが一致している,
モジュール。 - 請求項1に記載のモジュールであって,前記支持フレーム(4)が前記キャリア基板(6)にハンダ接合されているモジュール。
- 請求項1又は2に記載のモジュールであって,前記素子チップ(1)及び前記キャリア基板(6)を覆う封止層(10)を備えるモジュール。
- 請求項1〜3の何れか一項に記載のモジュールであって,前記支持フレーム(4),前記素子チップ(1)及び前記キャリア基板(6)の間の中空室(11)が密閉されているモジュール。
- 請求項1〜4の何れか一項に記載のモジュールであって,前記支持フレーム(4)及び前記支持要素(5)が実質的に金属製であるモジュール。
- 請求項1〜5の何れか一項に記載のモジュールであって,前記素子チップ(1)がSAWフィルタチップ又はMEMSチップであるモジュール。
- キャリア基板(6)に電気配線を設けるステップと,
前記キャリア基板(6)側の上側(2)に素子構造体(3)を備える少なくとも1個の素子チップ(1)を設けるステップと,
前記素子チップ(1)におけるキャリア基板(6)側の上側(2)に,共通の一つのプロセスステップで,高さが一致する支持フレーム(4)及び支持要素(5)を形成するステップと,
前記素子チップ(1)をフリップチップ法により前記キャリア基板(6)上に実装し,前記支持要素(5)により前記素子構造体(3)と前記キャリア基板(6)における電気配線とを電気的に接続するステップと,
を備えるモジュールの製造方法。 - 請求項7に記載の製造方法であって,前記キャリア基板(6)上にメタライゼーション層を設け,該メタライゼーション層の領域を接続面又は接触面として構成する製造方法。
- 請求項7又は8に記載の製造方法であって,前記素子チップ(1)に金属成長層を設ける製造方法。
- 請求項7又は8に記載の製造方法であって,前記支持フレーム(4)及び支持要素(5)を形成するため,前記素子チップ(1)上に,前記支持フレーム(4)及び支持要素(5)を除いた成形マスクを,電解レジストを用いてリソグラフ法により形成するステップと,金属成長層を電解的に増強するステップと,前記成形マスクを除去するステップと,を有する製造方法。
- 請求項7〜10の何れか一項に記載の製造方法であって,前記支持要素(5)及び前記支持フレーム(4)を,機械的なプロセスにより平坦化する製造方法。
- 請求項7〜11の何れか一項に記載の製造方法であって,前記支持フレーム(4)を前記キャリア基板(6)にハンダ接合して,該支持フレーム(4),前記素子チップ(1)及び前記キャリア基板(6)の間の中空室(11)を密閉する製造方法。
- 請求項7〜12の何れか一項に記載の製造方法であって,封止層(10)により前記素子チップ(1)及び前記キャリア基板(6)上に広範に設ける製造方法。
- 請求項7〜12の何れか一項に記載の製造方法であって,前記キャリア基板(6)に更なる電子部品を設け,封止層(10)により前記素子チップ(1),前記更なる電子部品及び前記キャリア基板(6)上に広範に設ける製造方法。
- 請求項7〜14の何れか一項に記載の製造方法であって,前記素子チップ(1)がSAWフィルタチップである製造方法。
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