JP2013534370A - 半導体構造ならびに導電性材料を開口内に提供するための方法 - Google Patents
半導体構造ならびに導電性材料を開口内に提供するための方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 77
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 239000004020 conductor Substances 0.000 title claims description 6
- 239000000463 material Substances 0.000 claims abstract description 123
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 117
- 229910052802 copper Inorganic materials 0.000 claims abstract description 117
- 239000010949 copper Substances 0.000 claims abstract description 117
- 229910052751 metal Inorganic materials 0.000 claims abstract description 48
- 239000002184 metal Substances 0.000 claims abstract description 48
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 41
- 238000000151 deposition Methods 0.000 claims abstract description 25
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 22
- 238000005240 physical vapour deposition Methods 0.000 claims abstract description 17
- 239000000203 mixture Substances 0.000 claims abstract description 16
- 150000004767 nitrides Chemical class 0.000 claims abstract description 14
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 48
- 229910052707 ruthenium Inorganic materials 0.000 claims description 48
- 229910017052 cobalt Inorganic materials 0.000 claims description 45
- 239000010941 cobalt Substances 0.000 claims description 45
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 45
- 230000008021 deposition Effects 0.000 claims description 21
- 229910052723 transition metal Inorganic materials 0.000 claims description 17
- 150000003624 transition metals Chemical class 0.000 claims description 17
- 239000012777 electrically insulating material Substances 0.000 claims description 11
- 229910052715 tantalum Inorganic materials 0.000 claims description 10
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 238000005121 nitriding Methods 0.000 claims description 4
- 229910052756 noble gas Inorganic materials 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims 1
- 230000008569 process Effects 0.000 description 33
- 238000004519 manufacturing process Methods 0.000 description 18
- 239000000758 substrate Substances 0.000 description 14
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 10
- 239000011810 insulating material Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000005054 agglomeration Methods 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 3
- 239000005380 borophosphosilicate glass Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000005360 phosphosilicate glass Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000615 nonconductor Substances 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
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- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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Abstract
Description
図5を参照すると、半導体構造30は、ベース32およびベース上の電気的な絶縁体34を含むように示される。ベース32および電気的に絶縁性の材料34は、それぞれ、上述されたベース12および電気的絶縁体14と同一の構造を含んでもよい。
Claims (35)
- 複数の開口内に銅含有材料を蒸着するための方法であって、前記蒸着された銅含有材料が100℃より高い温度である条件の下での前記銅含有材料の物理蒸着を含む、
ことを特徴とする方法。 - 前記蒸着は、
スパッタ蒸着される材料が100℃よりも高い温度で、プラズマを使用する前記銅含有材料をスパッタリングするステップと、
前記スパッタ蒸着される材料の前記温度を100℃よりも高く維持する間、前記プラズマを焼失させるステップと、複数の空洞のピンチングオフを回避するために、前記スパッタ蒸着される材料が前記複数の空洞へと表面拡散する十分な期間を提供するステップと、
のシーケンスの少なくとも一回の繰り返しを含む、
ことを特徴とする請求項1に記載の方法。 - 前記温度が、約300℃から約600℃の範囲にある、
ことを特徴とする請求項1に記載の方法。 - 前記温度が、約500℃から約600℃の範囲にある、
ことを特徴とする請求項1に記載の方法。 - 希ガスが、前記物理蒸着の間にターゲットから銅含有材料をスパッタリングするために使用される、
ことを特徴とする請求項1に記載の方法。 - 前記銅含有材料の前記物理蒸着の前に、前記複数の開口をライニングするために、前記複数の開口内に金属と窒素とを含有する組成物を形成するステップをさらに含む、
ことを特徴とする請求項1に記載の方法。 - 前記金属は、ルテニウムおよびコバルトのうちの一つもしくはその双方を含む、
ことを特徴とする請求項6に記載の方法。 - 前記銅含有材料の前記物理蒸着の前に、ルテニウムおよびコバルトのうちの一つもしくはその双方を含む金属含有材料で前記複数の開口をライニングするステップをさらに含む、
ことを特徴とする請求項1に記載の方法。 - 前記銅含有材料の前記物理蒸着の前に、
前記複数の開口を第一の金属でライニングするステップと、
前記第一の金属を窒素源に暴露することによって前記第一の金属を窒化するステップと、
をさらに含む、
ことを特徴とする請求項1に記載の方法。 - 前記金属は、ルテニウムおよびコバルトのうちの一つもしくはその双方で構成される、
ことを特徴とする請求項9に記載の方法。 - 複数の開口内に導電性材料を提供するための方法であって、
金属含有組成物で前記複数の開口をライニングするステップと、
前記金属含有組生物上に銅含有材料を物理蒸着するステップであって、前記物理蒸着は、第一のコンフォーメーションを有する銅含有材料コーティングを形成するために、前記蒸着された銅の温度を、約0℃に等しいかそれよりも低く維持する条件の下で実施される、ステップと、
前記コーティングの前記銅含有材料をリフローし、それによって、前記銅含有材料の第二のコンフォーメーションを形成するために、前記銅含有材料が約180℃から約250℃の範囲内の温度にある条件の下で、前記銅含有材料コーティングをアニールするステップと、
を含む少なくとも一回の繰り返しと、
を含む、
ことを特徴とする方法。 - 前記金属含有組成物は、ルテニウムおよびコバルトのうちの一つもしくはその双方で構成される、
ことを特徴とする請求項11に記載の方法。 - 前記金属含有組成物は、ルテニウムおよびコバルトのうちの一つもしくはその双方と結合した窒素で構成される、
ことを特徴とする請求項11に記載の方法。 - 前記銅含有材料の前記第一のコンフォーメーションは、前記複数の開口内に幾つかの間隙を残し、前記銅含有材料の前記第二のコンフォーメーションは、前記複数の開口内から前記複数の間隙を除去する、
ことを特徴とする請求項11に記載の方法。 - 複数の開口内に導電性材料を提供するための方法であって、
金属および窒素を含む組成物で前記複数の開口をライニングするステップと、
前記ライニングされた複数の開口を銅含有材料で少なくとも部分的に充填するステップと、
を含む、
ことを特徴とする方法。 - 前記複数の開口を銅含有材料で少なくとも部分的に充填する前記ステップは、前記蒸着された銅含有材料が、100℃よりも高い温度であるような条件の下で、前記銅含有材料の物理蒸着を使用する、
ことを特徴とする請求項15に記載の方法。 - 前記温度は、約300℃から約600℃の範囲内にある、
ことを特徴とする請求項16に記載の方法。 - 前記複数の開口を銅含有材料で少なくとも部分的に充填する前記ステップは、
前記銅含有材料の第一のコンフォーメーションを形成するために、前記蒸着された銅含有材料の温度を約40℃に等しいかそれよりも低い温度で維持する条件の下での前記銅含有材料の蒸着と、
前記蒸着の後、前記銅含有材料をリフローして、それによって前記銅含有材料の第二のコンフォーメーションを形成するために、前記蒸着された銅含有材料の温度が約180℃から約250℃の範囲内である条件の下で、前記銅含有材料をアニールするステップと、
を使用する、
ことを特徴とする請求項15に記載の方法。 - 前記銅含有材料の前記第一のコンフォーメーションは、前記複数の開口内に幾つかの凹部を残し、前記銅含有材料の前記第二のコンフォーメーションは、前記複数の開口内の前記複数の凹部を除去する、
ことを特徴とする請求項18に記載の方法。 - 前記ライニングされた開口を形成する前記ステップは、前記複数の開口の複数の側壁に沿った、金属および窒素を含む前記組成物の蒸着を含む、
ことを特徴とする請求項15に記載の方法。 - 前記金属は、ルテニウムおよびコバルトのうちの一つもしくはその双方で構成される、
ことを特徴とする請求項20に記載の方法。 - 金属および窒素を含む前記組成物の前記蒸着は、ALD、CVDおよびPVDのうちの一つ以上を使用する、
ことを特徴とする請求項20に記載の方法。 - 前記ライニングされた開口を形成する前記ステップは、
前記金属で前記複数の開口の複数の側壁をコーティングするステップと、
前記金属を窒素源へと暴露することによって前記金属を窒化するステップと、
を含む、
ことを特徴とする請求項15に記載の方法。 - 前記金属は、ルテニウムおよびコバルトのうちの一つもしくはその双方を含む、
ことを特徴とする請求項23に記載の方法。 - 前記金属は、ルテニウムおよびコバルトのうちの一つもしくはその双方と合金された遷移金属を含む、
ことを特徴とする請求項23に記載の方法。 - 前記金属は、ルテニウムおよびコバルトのうちの一つもしくはその双方と合金されたタンタルを含む、
ことを特徴とする請求項23に記載の方法。 - 窒化する前記ステップは、NH3、NH2およびN2のうちの一つ以上への前記金属の暴露を含む、
ことを特徴とする請求項23に記載の方法。 - 電気的に絶縁性の材料へと伸長する開口と、
前記開口の複数の側壁をライニングする金属窒化物ライナーと、
前記金属窒化物ライナーに直接相対する前記開口内の銅含有材料と、
を含む、
ことを特徴とする半導体構造。 - 前記金属窒化物ライナーの前記金属は、ルテニウムおよびコバルトのうちの一つもしくはその双方を含む、
ことを特徴とする請求項28に記載の構造。 - 前記金属窒化物ライナーの前記金属は、ルテニウムおよびコバルトのうちの一つもしくはその双方と合金された遷移金属を含む、
ことを特徴とする請求項28に記載の構造。 - 前記金属窒化物ライナーは、前記電気的に絶縁性の材料に直接相対する、
ことを特徴とする請求項30に記載の構造。 - 前記金属窒化物ライナーの前記金属は、ルテニウムおよびコバルトのうちの一つもしくはその双方と合金されたタンタルを含む、
ことを特徴とする請求項28に記載の構造。 - 前記金属窒化物ライナーの前記金属は、ルテニウムおよびコバルトのうちの一つもしくはその双方と合金されたタンタルを含み、前記電気的に絶縁性の材料は、シリコン酸化物含有の電気的に絶縁性の材料を含み、前記金属窒化物ライナーは、電気的に絶縁性の材料を含む前記シリコン酸化物に直接相対する、
ことを特徴とする請求項28に記載の構造。 - 前記金属窒化物ライナーの前記金属はルテニウムで構成される、
ことを特徴とする請求項28に記載の構造。 - 前記金属窒化物ライナーの前記金属はコバルトで構成される、
ことを特徴とする請求項28に記載の構造。
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JP2017212466A (ja) * | 2012-03-28 | 2017-11-30 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | シームレスのコバルト間隙充填を可能にする方法 |
JP2015159183A (ja) * | 2014-02-24 | 2015-09-03 | 東京エレクトロン株式会社 | 凹部にコバルトを供給する方法 |
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TWI443775B (zh) | 2014-07-01 |
US9177917B2 (en) | 2015-11-03 |
US20120043658A1 (en) | 2012-02-23 |
US10879113B2 (en) | 2020-12-29 |
US10121697B2 (en) | 2018-11-06 |
US20160056073A1 (en) | 2016-02-25 |
SG188236A1 (en) | 2013-04-30 |
WO2012024056A3 (en) | 2012-04-19 |
CN103081066A (zh) | 2013-05-01 |
KR20130044354A (ko) | 2013-05-02 |
TW201216410A (en) | 2012-04-16 |
WO2012024056A2 (en) | 2012-02-23 |
US20180374745A1 (en) | 2018-12-27 |
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