JP2013526051A - トレンチ及び頂部接点を備えた発光ダイオード - Google Patents
トレンチ及び頂部接点を備えた発光ダイオード Download PDFInfo
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- JP2013526051A JP2013526051A JP2013506776A JP2013506776A JP2013526051A JP 2013526051 A JP2013526051 A JP 2013526051A JP 2013506776 A JP2013506776 A JP 2013506776A JP 2013506776 A JP2013506776 A JP 2013506776A JP 2013526051 A JP2013526051 A JP 2013526051A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 49
- 239000000463 material Substances 0.000 claims abstract description 38
- 239000004020 conductor Substances 0.000 claims description 10
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 147
- 229910052751 metal Inorganic materials 0.000 description 36
- 239000002184 metal Substances 0.000 description 36
- 239000000758 substrate Substances 0.000 description 18
- 239000002019 doping agent Substances 0.000 description 14
- 230000001681 protective effect Effects 0.000 description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 230000007480 spreading Effects 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910002059 quaternary alloy Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000001429 visible spectrum Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000001127 nanoimprint lithography Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 229910001258 titanium gold Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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Abstract
【選択図】図2
Description
Claims (18)
- デバイスであって、
n型領域とp型領域との間に設けられた発光層を備える半導体構造を有し、
前記半導体構造の底面上に設けられた底部接点を有し、前記底部接点は、前記n型領域及び前記p型領域のうちの一方に電気的に接続され、
前記半導体構造の頂面上に設けられた頂部接点を有し、前記頂部接点は、前記n型領域及びp型領域のうちの他方に電気的に接続され、
前記頂部接点の真下に設けられた鏡を有し、前記鏡は、前記半導体構造に形成されたトレンチ及び前記トレンチ内に設けられた反射材料を有し、前記トレンチは、前記発光層を貫通して延びている、デバイス。 - 前記頂部接点は、複数本の互いに接続されている接触アームに接続されたボンディングパッドを有する、請求項1記載のデバイス。
- 前記トレンチは、前記複数本の互いに連結された接触アームと位置合わせされると共に該接触アームの下に配置され、前記トレンチの底部は、所与の箇所のところで前記トレンチの上に位置する前記接触アームと実質的に同一の幅のものである、請求項2記載のデバイス。
- 前記トレンチは、前記ボンディングパッドの縁部の少なくとも一部分と位置合わせされている、請求項2記載のデバイス。
- 前記ボンディングパッドの縁部の少なくとも一部分と位置合わせされた前記トレンチの一部分に隣接した領域において、絶縁層が前記底部接点と前記発光層との間に設けられており、その結果、前記ボンディングパッドの下に位置する前記発光層の一部分には電流が注入されないようになっている、請求項4記載のデバイス。
- 前記トレンチは、前記ボンディングパッドを包囲している、請求項2記載のデバイス。
- 前記発光層は、III族窒化物材料である、請求項1記載のデバイス。
- 前記発光層は、AlInGaPである、請求項1記載のデバイス。
- 前記トレンチと前記反射材料との間に設けられた誘電体層を更に有し、前記反射材料は、前記誘電体層によって前記トレンチ内の前記半導体構造から電気的に隔離されている、請求項1記載のデバイス。
- 前記半導体構造の頂面に平行な方向に屈折率の変化部を更に有し、前記屈折率変化部は、前記半導体構造内に又は前記半導体構造の表面上に設けられている、請求項1記載のデバイス。
- デバイスであって、
n型領域とp型領域との間に設けられた発光層を備える半導体構造を有し、
前記半導体構造の底面上に設けられた底部接点を有し、前記底部接点は、前記n型領域及び前記p型領域のうちの一方に電気的に接続され、
前記半導体構造の頂面上に設けられた頂部接点を有し、前記頂部接点は、前記n型領域及びp型領域のうちの他方に電気的に接続され、
前記半導体構造に形成されたトレンチを有し、前記トレンチは、前記発光層を貫通して延びており、
前記トレンチの底部内に設けられた導電材料を有し、
前記導電材料上に設けられた誘電体層を有し、前記半導体構造及び前記誘電体層は、前記導電材料を完全に包み込んでいる、デバイス。 - 前記トレンチ内に設けられた反射材料を更に有し、前記反射材料は、前記誘電体層によって前記導電材料から電気的に隔離されている、請求項11記載のデバイス。
- 前記半導体構造の頂面に平行な方向に屈折率の変化部を更に有し、前記屈折率変化部は、前記半導体構造内に又は前記半導体構造の表面上に設けられている、請求項11記載のデバイス。
- 前記トレンチは、前記頂部接点の縁部の少なくとも一部分と位置合わせされている、請求項11記載のデバイス。
- 前記頂部接点の縁部の少なくとも一部分と位置合わせされた前記トレンチの一部分に隣接した領域において、絶縁層が前記底部接点と前記発光層との間に設けられており、その結果、前記頂部接点の下に位置する前記発光層の一部分には電流が注入されないようになっている、請求項14記載のデバイス。
- 前記トレンチは、前記頂部接点を包囲している、請求項11記載のデバイス。
- 前記発光層は、III族窒化物材料である、請求項11記載のデバイス。
- 前記発光層は、AlInGaPである、請求項11記載のデバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/770,550 US8154042B2 (en) | 2010-04-29 | 2010-04-29 | Light emitting device with trenches and a top contact |
US12/770,550 | 2010-04-29 | ||
PCT/IB2011/051417 WO2011135471A2 (en) | 2010-04-29 | 2011-04-01 | Light emitting device with trenches and a top contact |
Publications (2)
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JP2013526051A true JP2013526051A (ja) | 2013-06-20 |
JP6338371B2 JP6338371B2 (ja) | 2018-06-06 |
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JP2013506776A Active JP6338371B2 (ja) | 2010-04-29 | 2011-04-01 | トレンチ及び頂部接点を備えた発光ダイオード |
Country Status (7)
Country | Link |
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US (2) | US8154042B2 (ja) |
EP (1) | EP2564436B1 (ja) |
JP (1) | JP6338371B2 (ja) |
KR (1) | KR20130064748A (ja) |
CN (1) | CN102906888B (ja) |
TW (2) | TWI546982B (ja) |
WO (1) | WO2011135471A2 (ja) |
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KR20170084148A (ko) * | 2014-11-06 | 2017-07-19 | 코닌클리케 필립스 엔.브이. | 상부 접점 아래에 트렌치를 갖는 발광 디바이스 |
JP2018511949A (ja) * | 2015-04-15 | 2018-04-26 | ルミレッズ ホールディング ベーフェー | リフレクタ及び頂部コンタクトを有する発光デバイス |
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JP2017534185A (ja) * | 2014-11-06 | 2017-11-16 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 頂部コンタクトの下方にトレンチを有する発光デバイス |
KR102529980B1 (ko) * | 2014-11-06 | 2023-05-08 | 루미리즈 홀딩 비.브이. | 상부 접점 아래에 트렌치를 갖는 발광 디바이스 |
JP2018511949A (ja) * | 2015-04-15 | 2018-04-26 | ルミレッズ ホールディング ベーフェー | リフレクタ及び頂部コンタクトを有する発光デバイス |
Also Published As
Publication number | Publication date |
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EP2564436B1 (en) | 2019-06-12 |
TW201631807A (zh) | 2016-09-01 |
TW201208122A (en) | 2012-02-16 |
EP2564436A2 (en) | 2013-03-06 |
WO2011135471A3 (en) | 2012-03-22 |
US8415656B2 (en) | 2013-04-09 |
CN102906888A (zh) | 2013-01-30 |
JP6338371B2 (ja) | 2018-06-06 |
US8154042B2 (en) | 2012-04-10 |
US20110266568A1 (en) | 2011-11-03 |
WO2011135471A2 (en) | 2011-11-03 |
TWI546982B (zh) | 2016-08-21 |
KR20130064748A (ko) | 2013-06-18 |
CN102906888B (zh) | 2016-08-17 |
TWI616001B (zh) | 2018-02-21 |
US20120112161A1 (en) | 2012-05-10 |
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