JP2013518374A - 照明装置 - Google Patents
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- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
- F21K9/237—Details of housings or cases, i.e. the parts between the light-generating element and the bases; Arrangement of components within housings or cases
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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Abstract
【選択図】図3
Description
本願は、独国特許出願第102010006135.2号および独国特許出願第102010018260.5号の優先権を主張し、この文書の開示内容は本願に援用される。
Claims (15)
- 表側キャリア(1)と、裏側キャリア(2)と、複数の発光ダイオードチップ(3)と、を有する照明装置であって、前記照明装置の動作時に、前記複数の発光ダイオードチップ(3)は光を放射し、かつ廃熱を放散し、
− 前記裏側キャリア(2)は、少なくとも部分的に、前記表側キャリア(1)によって覆われており、
− 前記発光ダイオードチップ(3)は、前記裏側キャリア(2)と前記表側キャリア(1)との間にアレイを形成するように配置され、
− 前記発光ダイオード(3)は、前記裏側キャリア(2)もしくは前記表側キャリア(1)またはその両方によって電気的に接触されており、前記裏側キャリア(2)および前記表側キャリア(1)によって機械的に固定されており、
− 前記表側キャリア(1)は、前記発光ダイオードチップ(3)に熱伝導可能な状態に結合され、前記発光ダイオードチップ(3)とは反対側の光取り出し面(101)を備えており、前記光取り出し面は、前記発光ダイオードチップ(3)によって生成される廃熱の一部を周囲環境に放散するように構成されており、
− 前記照明装置の動作時、前記発光ダイオードチップ(3)それぞれに、作動させるための100mW以下の公称電力が供給され、前記発光ダイオードチップ(3)それぞれは100lm/W以上の発光効率を有し、
− 隣り合う発光ダイオードチップ(3)の間の距離(dC)は、前記照明装置の動作時に前記発光ダイオードチップ(3)を前記公称電力で作動させるとき、前記発光ダイオードチップ(3)によって形成される前記アレイが、450W/m2以下の電力消費量を有するように、アレイの基本領域に対して十分に大きく選択されており、
− 隣り合う発光ダイオードチップ(3)の間の前記距離(dC)は、前記照明装置の動作時に前記発光ダイオードチップ(3)を前記公称電力で作動させるとき、前記発光ダイオードチップ(3)によって形成される前記アレイが前記光取り出し面の平面視において、2000Cd/m2以上の平均輝度で光を放射するように、十分に小さく選択されており、前記距離(dC)は、前記光取り出し面(101)と前記発光ダイオードチップ(3)との間の距離(dL)の2.5倍以下である、
照明装置。 - 前記光取り出し面(101)と前記発光ダイオードチップ(3)との間の前記距離(dL)は、5mm以下である、
請求項1に記載の照明装置。 - 前記発光ダイオードチップ(3)が、300μm以下の横方向寸法(LC)を有する、
請求項1または請求項2のいずれかに記載の照明装置。 - 前記光取り出し面(101)における熱の放散と前記裏側キャリア(2)の裏側外面(201)における熱の放散とによって、追加のヒートシンク無しに冷却されるように前記照明装置が設計されている、
請求項1から請求項3のいずれかに記載の照明装置。 - 前記表側キャリア(1)および前記裏側キャリア(2)がフレキシブルである、
請求項1から請求項4のいずれかに記載の照明装置。 - 構造高さ(HB)が、10mm以下、特に、5mm以下である、
請求項1から請求項5のいずれかに記載の照明装置。 - 前記表側キャリア(1)と前記裏側キャリア(2)との間に、接着促進剤(4)が所々に配置され、前記接着促進剤によって、前記キャリア(1,2)の間に引張応力が発生する、
請求項1から請求項6のいずれかに記載の照明装置。 - 前記発光ダイオードチップ(3)と前記表側キャリア(1)との間に屈折率整合材料(5)が配置される、
請求項1から請求項7のいずれかに記載の照明装置。 - 前記表側キャリア(1)は、複数の個別の空洞(15)を囲んでおり、前記各空洞(15)は、前記発光ダイオードチップ(3)の1つと重なっており、発光材料を有する発光変換要素(6)を含んでいる、
請求項1から請求項8のいずれかに記載の照明装置。 - 前記表側キャリア(1)は、複数の個別の空洞(15)を囲んでおり、
− 前記各空洞(15)は、前記発光ダイオードチップ(3)の1つと重なっており、
− 前記各空洞(15)の、前記それぞれの発光ダイオードチップ(3)の側の第1のサブ領域(15A)は、発光材料を有する発光変換要素(6)を含んでおり、
− 前記各空洞(15)の、前記それぞれの発光ダイオードチップ(3)とは反対側の第2のサブ領域(15B)は、材料、特に気体によって満たされており、前記材料は前記光取り出し面(101)の側の前記空洞(15)の境界を形成している前記表側キャリア(1)の材料よりも低い屈折率を有し、特に、湾曲した表面を備えている、
請求項1から請求項8のいずれかに記載の照明装置。 - 前記各空洞(15)は、前記空洞(15)が重なっている前記発光ダイオードチップ(3)の対応する横方向寸法(LC)の3倍よりも小さいかまたは等しい横方向寸法(LP)を有する、
請求項9または請求項10のいずれかに記載の照明装置。 - 前記表側キャリア(1)は、散乱粒子によって拡散反射する層(16)、を含んでいる、
請求項1から請求項11のいずれかに記載の照明装置。 - 前記発光ダイオードチップ(3)それぞれは、前記表側キャリア(1)に面している光透過性のコンタクト層(34)を備えており、前記表側キャリア(1)は、少なくとも部分的に光を透過させる電気接続層(10)を備えており、前記接続層は、特に、前記発光ダイオードチップ(3)の前記コンタクト層(34)に直接隣接している、
請求項1から請求項12のいずれかに記載の照明装置。 - 前記裏側キャリア(2)は、少なくとも1つの導体トラック(20A)を備えており、前記導体トラック(20A)は、前記発光ダイオードチップ(3)の少なくとも1つに表側から電気的に接触するために設けられており、少なくとも1つの電気的ブリッジ要素(7)は、前記表側キャリア(1)と前記裏側キャリア(2)との間に配置されており、前記裏側キャリアの前記導体トラック(20A)と前記表側キャリア(1)の前記電気接続層(10)との間の電気的接触を生じさせる、
請求項13に記載の照明装置。 - 前記発光ダイオードチップ(3)と前記電気的ブリッジ要素(7)とは、ほぼ同じ高さ(HC)である、
請求項14に記載の照明装置。
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Application Number | Priority Date | Filing Date | Title |
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DE102010006135 | 2010-01-29 | ||
DE102010006135.2 | 2010-01-29 | ||
DE102010018260A DE102010018260A1 (de) | 2010-01-29 | 2010-04-26 | Beleuchtungsvorrichtung |
DE102010018260.5 | 2010-04-26 | ||
PCT/EP2011/050541 WO2011092072A1 (de) | 2010-01-29 | 2011-01-17 | Beleuchtungsvorrichtung |
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JP2013518374A true JP2013518374A (ja) | 2013-05-20 |
JP2013518374A5 JP2013518374A5 (ja) | 2014-02-27 |
JP5732075B2 JP5732075B2 (ja) | 2015-06-10 |
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US (1) | US9029878B2 (ja) |
EP (1) | EP2529399B1 (ja) |
JP (1) | JP5732075B2 (ja) |
KR (1) | KR101736408B1 (ja) |
CN (1) | CN102714204B (ja) |
DE (1) | DE102010018260A1 (ja) |
WO (1) | WO2011092072A1 (ja) |
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JP2017076729A (ja) * | 2015-10-16 | 2017-04-20 | スタンレー電気株式会社 | 半導体発光装置、及び、半導体発光装置の製造方法 |
JP2019220405A (ja) * | 2018-06-22 | 2019-12-26 | 日亜化学工業株式会社 | 発光モジュールの製造方法 |
JP2020010022A (ja) * | 2018-07-02 | 2020-01-16 | ドクトル・ヨハネス・ハイデンハイン・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツングDr. Johannes Heidenhain Gesellschaft Mit Beschrankter Haftung | 位置測定装置のセンサーユニット用の光源を製作する方法及び位置測定装置 |
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EP3311373A1 (en) * | 2015-06-19 | 2018-04-25 | Janssen Pharmaceutica, N.V. | Devices and methods for drug administration and mixing, and training of proper techniques therefor |
KR20170139924A (ko) * | 2016-06-10 | 2017-12-20 | 엘지전자 주식회사 | 투명 발광다이오드 필름 |
WO2018084446A1 (en) * | 2016-11-01 | 2018-05-11 | Lg Electronics Inc. | Transparent light-emitting diode film |
DE102016221923A1 (de) * | 2016-11-09 | 2018-05-09 | Bayerische Motoren Werke Aktiengesellschaft | Beleuchtungseinrichtung für ein Kraftfahrzeug |
KR102383302B1 (ko) * | 2017-11-08 | 2022-04-05 | 엘지디스플레이 주식회사 | 백라이트 유닛 및 이를 포함한 액정표시장치 |
DE102017130764B4 (de) * | 2017-12-20 | 2024-01-04 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Vorrichtung mit Halbleiterchips auf einem Primärträger und Verfahren zur Herstellung einer solchen Vorrichtung |
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- 2011-01-17 EP EP11700426.7A patent/EP2529399B1/de not_active Not-in-force
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JP2017076729A (ja) * | 2015-10-16 | 2017-04-20 | スタンレー電気株式会社 | 半導体発光装置、及び、半導体発光装置の製造方法 |
JP2019220405A (ja) * | 2018-06-22 | 2019-12-26 | 日亜化学工業株式会社 | 発光モジュールの製造方法 |
JP2020010022A (ja) * | 2018-07-02 | 2020-01-16 | ドクトル・ヨハネス・ハイデンハイン・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツングDr. Johannes Heidenhain Gesellschaft Mit Beschrankter Haftung | 位置測定装置のセンサーユニット用の光源を製作する方法及び位置測定装置 |
JP7328798B2 (ja) | 2018-07-02 | 2023-08-17 | ドクトル・ヨハネス・ハイデンハイン・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | 位置測定装置のセンサーユニット用の光源を製作する方法及び位置測定装置 |
Also Published As
Publication number | Publication date |
---|---|
US9029878B2 (en) | 2015-05-12 |
US20130043496A1 (en) | 2013-02-21 |
CN102714204B (zh) | 2015-11-25 |
WO2011092072A1 (de) | 2011-08-04 |
JP5732075B2 (ja) | 2015-06-10 |
DE102010018260A1 (de) | 2011-08-04 |
KR101736408B1 (ko) | 2017-05-16 |
EP2529399A1 (de) | 2012-12-05 |
EP2529399B1 (de) | 2017-09-20 |
CN102714204A (zh) | 2012-10-03 |
KR20120139717A (ko) | 2012-12-27 |
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