JP2013515355A - 流動性cvd処理から形成された誘電体材料上で実行される湿式酸化処理 - Google Patents
流動性cvd処理から形成された誘電体材料上で実行される湿式酸化処理 Download PDFInfo
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- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
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Abstract
Description
Claims (15)
- 基板上に酸化させた誘電体材料を形成する方法であって、
流動性CVD処理によって基板上に誘電体材料を形成するステップと、
基板上の誘電体材料を硬化させるステップと、
基板上の電体材料上で湿式酸化処理を実行するステップと、
基板上に酸化させた誘電体材料を形成するステップと
を含む方法。 - 流動性CVD処理によって誘電体材料を基板上に形成するステップが、
流動性CVD処理チャンバ内へ少なくともケイ素含有前駆体および処理前駆体を含む混合ガスを供給することをさらに含み、ケイ素含有前駆体が、シラン、ジシラン、メチルシラン、ジメチルシラン、トリメチルシラン、テトラメチルシラン、テトラエトキシシラン(TEOS)、トリエトキシシラン(TES)、オクタメチルシクロテトラシロキサン(OMCTS)、テトラメチル−ジシロキサン(TMDSO)、テトラメチルシクロテトラシロキサン(TMCTS)、テトラメチル−ジエトキシル−ジシロキサン(TMDDSO)、ジメチル−ジメトキシル−シラン(DMDMS)、トリシリルアミン(TSA)、ジシリルアミン(DSA)、SixNyHzOzz含有前駆体、SixNyHzClzz含有前駆体、およびこれらの組合せからなる群から選択される、請求項1に記載の方法。 - 処理前駆体が、H2/N2混合物、N2、NH3、NH4OH、N2、N2H4蒸気、NO、N2O、NO2、H2、O3、O2、H2O2、水蒸気、およびこれらの組合せからなる群から選択される、請求項2に記載の方法。
- ケイ素含有前駆体がトリシリルアミン(TSA)であり、処理前駆体がNH3である、請求項2に記載の方法。
- 基板温度が摂氏100度未満で制御される請求項2に記載の方法。
- 誘電体材料上で湿式酸化処理を実行するステップが、
酸素源を含有する処理溶液で基板を湿らせることをさらに含み、酸素源が、O3、O2、N2O、NO2、H2O蒸気もしくはスチーム、H2O2、NH4OH/H2O2溶液、HCl/H2O2溶液の希釈剤、およびこれらの組合せからなる群から選択される、請求項1に記載の方法。 - 酸素源がO3である請求項6に記載の方法。
- 処理溶液が、1リットル(L)当たり約1ミリグラム(mg)〜1リットル(L)当たり約1000ミリグラム(mg)のオゾン濃度を有する脱イオン(DI)オゾン水である、請求項6に記載の方法。
- 処理溶液が、摂氏40度を上回るが摂氏100度未満で制御された温度を有する、請求項6に記載の方法。
- 誘電体材料上で湿式酸化処理を実行するステップが、
誘電体材料内のケイ素−窒素および/またはケイ素−水素結合をケイ素−酸化物結合と置き換えることをさらに含む、請求項1に記載の方法。 - 基板上の酸化させた誘電体材料上で熱アニール処理を実行するステップ
をさらに含む、請求項1に記載の方法。 - 熱アニール処理が、
基板を摂氏約100度〜摂氏約1000度の温度までアニールすることをさらに含む、請求項11に記載の方法。 - 酸化させた誘電体材料が酸化ケイ素層である請求項1に記載の方法。
- 酸化させた誘電体材料を基板上に形成する方法であって、
流動性CVD処理によって、式SixNyHzを有するケイ素含有層を基板上に形成するステップと、
基板上のケイ素含有層を硬化させるステップと、
酸素源を有する処理溶液にケイ素含有層を浸漬するステップであって、処理溶液中の酸素源が、ケイ素含有層内のケイ素窒素またはケイ素水素結合を、ケイ素酸素結合と少なくとも部分的に置き換えるステップと、
酸化させたケイ素含有層を基板上に形成するステップと
を含む方法。 - 基板上に酸化させた誘電体材料を形成する方法であって、
流動性CVD処理によってケイ素含有層を基板上に形成するステップであって、トリシリルアミン(TSA)およびNH3を含有する混合ガスに露出させることによってケイ素含有層を形成するステップと、
基板上のケイ素含有層を硬化させるステップと、
脱イオン(DI)水の中にO3を含んだ処理溶液でケイ素含有層を湿らせるステップであって、脱イオン(DI)水の中のオゾンが、1リットル(L)当たり約1ミリグラム(mg)〜1リットル(L)当たり約1ミリグラム(mg)の濃度を有するステップと、
酸化させたケイ素含有層を基板上に形成するステップと
を含む方法。
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US12/643,196 | 2009-12-21 | ||
US12/643,196 US20110151677A1 (en) | 2009-12-21 | 2009-12-21 | Wet oxidation process performed on a dielectric material formed from a flowable cvd process |
PCT/US2010/055402 WO2011084223A2 (en) | 2009-12-21 | 2010-11-04 | Wet oxidation process performed on a dielectric material formed from a flowable cvd process |
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KR (1) | KR20120123668A (ja) |
CN (1) | CN102652355A (ja) |
SG (1) | SG181858A1 (ja) |
TW (1) | TW201125037A (ja) |
WO (1) | WO2011084223A2 (ja) |
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JP2016063232A (ja) * | 2014-09-17 | 2016-04-25 | エーエスエム アイピー ホールディング ビー.ブイ. | SiNの堆積 |
JP2018533215A (ja) * | 2015-10-22 | 2018-11-08 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | SiOおよびSiNを含む流動性膜を堆積させる方法 |
JP2019503590A (ja) * | 2015-12-21 | 2019-02-07 | バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー | ケイ素含有膜の堆積のための組成物及びそれを用いた方法 |
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JP2020128407A (ja) * | 2017-02-08 | 2020-08-27 | バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー | ケイ素含有膜の堆積のための有機アミノ官能化直鎖状及び環状オリゴシロキサン |
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Also Published As
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US9390914B2 (en) | 2016-07-12 |
WO2011084223A3 (en) | 2011-09-01 |
KR20120123668A (ko) | 2012-11-09 |
SG181858A1 (en) | 2012-08-30 |
CN102652355A (zh) | 2012-08-29 |
US20120142198A1 (en) | 2012-06-07 |
US20110151677A1 (en) | 2011-06-23 |
WO2011084223A2 (en) | 2011-07-14 |
TW201125037A (en) | 2011-07-16 |
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