JP2013513956A - 半導体レーザ - Google Patents
半導体レーザ Download PDFInfo
- Publication number
- JP2013513956A JP2013513956A JP2012543557A JP2012543557A JP2013513956A JP 2013513956 A JP2013513956 A JP 2013513956A JP 2012543557 A JP2012543557 A JP 2012543557A JP 2012543557 A JP2012543557 A JP 2012543557A JP 2013513956 A JP2013513956 A JP 2013513956A
- Authority
- JP
- Japan
- Prior art keywords
- region
- web
- semiconductor
- semiconductor substrate
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 197
- 239000000758 substrate Substances 0.000 claims abstract description 123
- 230000005855 radiation Effects 0.000 claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 claims abstract description 21
- 238000000926 separation method Methods 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- -1 nitride compound Chemical class 0.000 claims description 7
- 238000006073 displacement reaction Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 67
- 239000013078 crystal Substances 0.000 description 14
- 230000003595 spectral effect Effects 0.000 description 8
- 238000002310 reflectometry Methods 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims (15)
- 放射を生成するために設けられている活性領域(20)を備えている半導体基体(2)とウェブ状の領域(3)とを有している半導体レーザ(1)において、
前記ウェブ状の領域は放射方向に沿って延在する長手軸(30)を有しており、
前記長手軸は、放射方向に延在する前記半導体基体の中心軸(25)に関して、横断方向にずらされて配置されていることを特徴とする、半導体レーザ(1)。 - 前記半導体レーザは横断方向においてエッチピット密度勾配を有している、請求項1に記載の半導体レーザ。
- 前記ウェブ状の領域の前記長手軸は、前記エッチピット密度が比較的低い前記中心軸の側に配置されている、請求項2に記載の半導体レーザ。
- 前記ウェブ状の領域の前記長手軸は前記半導体基体の前記中心軸に関して少なくとも10μm、有利には少なくとも20μmずらされて配置されている、請求項1乃至3のいずれか一項に記載の半導体レーザ。
- 前記半導体基体上にコンタクト層(4)が配置されており、該コンタクト層(4)は、前記活性領域への外部からの電気的な接触接続のために、前記ウェブ状の領域の上面に対向する側から設けられており、前記コンタクト層はウェブ状の領域の側にコンタクト面(40)を形成しており、該コンタクト面(40)の拡張部は横断方向において少なくとも部分的に、前記半導体基体の拡張部の少なくとも0.4倍である、請求項1乃至4のいずれか一項に記載の半導体レーザ。
- 前記活性領域は窒化化合物半導体材料を基礎とする、請求項1乃至5のいずれか一項に記載の半導体レーザ。
- 複数の半導体基体を製造する方法において、
a)分離線(7)によって相互に分離されている複数の素子領域を備えている支持体(5)を準備するステップと、
b)放射を生成するために設けられている活性領域(20)を備えている半導体積層体(200)を析出するステップと、
c)隣接する二つの分離線の間において、前記分離線に対して垂直に延びる方向に第1のウェブ状の領域(31)及び第2のウェブ状の領域(32)が並んで形成されるように複数のウェブ状の領域(3)を前記半導体積層体から形成するステップであって、前記ウェブ状の領域の内の少なくとも一つを、該ウェブ状の領域に一番近い分離線よりも、隣接する分離線間に延びる中心線(8)の近くに配置するステップと、
d)前記半導体積層体を、それぞれが少なくとも一つのウェブ状の領域を備えている複数の半導体基体(2)に個別化するステップとを備えていることを特徴とする、複数の半導体基体を製造する方法。 - 二つのウェブ状の領域をそれぞれ一番近い分離線よりも中心線の近くに配置する、請求項7に記載の方法。
- 前記支持体のエッチピット密度を前記中心線から前記分離線の方向に向かって増加させ、前記個別化を前記分離線及び前記中心線に沿って行う、請求項7又は8に記載の方法。
- 外部との電気的な接触接続のために設けられているコンタクト面(40)が、前記中心線とは反対側において、それぞれのウェブ状の領域に対応付けられているように、コンタクト層(4)を前記半導体積層体上に形成する、請求項7乃至9のいずれか一項に記載の方法。
- 前記第1のウェブ状の領域を備えている半導体基体と前記第2のウェブ状の領域を備えている半導体基体を光学的に区別できるようにコンタクト層(4)を形成する、請求項10に記載の方法。
- 前記第1のウェブ状の領域を備えている半導体基体及び前記第2のウェブ状の領域を備えている半導体基体を自動的な光学識別によって相互に区別する、請求項11に記載の方法。
- 前記コンタクト面の拡張部は二つの分離線間の距離の少なくとも20%である、請求項10乃至12のいずれか一項に記載の方法。
- 支持体はGaNを基礎としている、請求項7乃至13のいずれか一項に記載の方法。
- 請求項1乃至6のいずれか一項に記載の半導体レーザを製造する、請求項7乃至14のいずれか一項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009058345.9A DE102009058345B4 (de) | 2009-12-15 | 2009-12-15 | Halbleiterlaser |
DE102009058345.9 | 2009-12-15 | ||
PCT/EP2010/067402 WO2011072964A1 (de) | 2009-12-15 | 2010-11-12 | Halbleiterlaser |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013513956A true JP2013513956A (ja) | 2013-04-22 |
JP2013513956A5 JP2013513956A5 (ja) | 2013-09-26 |
JP5744054B2 JP5744054B2 (ja) | 2015-07-01 |
Family
ID=43567921
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012543557A Active JP5744054B2 (ja) | 2009-12-15 | 2010-11-12 | 半導体基体を製造する方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US8879596B2 (ja) |
EP (1) | EP2514049B1 (ja) |
JP (1) | JP5744054B2 (ja) |
KR (1) | KR101723143B1 (ja) |
CN (1) | CN102668277B (ja) |
DE (1) | DE102009058345B4 (ja) |
TW (1) | TWI438992B (ja) |
WO (1) | WO2011072964A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102013107971A1 (de) * | 2013-07-25 | 2015-01-29 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip, Halbleiterbauelement und Verfahren zur Herstellung von optoelektronischen Halbleiterchips |
DE102013216527A1 (de) | 2013-08-21 | 2015-02-26 | Osram Opto Semiconductors Gmbh | Laserbauelement und Verfahren zum Herstellen eines Laserbauelements |
DE102013220641A1 (de) * | 2013-10-14 | 2015-04-16 | Osram Opto Semiconductors Gmbh | Halbleiterlaser mit einseitig verbreiterter Ridgestruktur |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0679172U (ja) * | 1993-04-14 | 1994-11-04 | 松下電器産業株式会社 | 半導体レーザ |
JP2004095859A (ja) * | 2002-08-30 | 2004-03-25 | Sharp Corp | 半導体レーザ及びその製造方法 |
JP2007173402A (ja) * | 2005-12-20 | 2007-07-05 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置 |
JP2009088270A (ja) * | 2007-09-28 | 2009-04-23 | Sanyo Electric Co Ltd | 半導体素子の製造方法 |
JP2009200478A (ja) * | 2008-01-21 | 2009-09-03 | Sanyo Electric Co Ltd | 半導体レーザ素子およびその製造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2044717A1 (en) | 1990-06-18 | 1991-12-19 | Candadai S. Ramadoss | Process for the separation of proteins, polypeptides or metals |
EP0874405A3 (en) | 1997-03-25 | 2004-09-15 | Mitsubishi Cable Industries, Ltd. | GaN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof |
JPH11233877A (ja) * | 1998-02-16 | 1999-08-27 | Nec Corp | アレイ型レーザダイオード |
WO2002065556A1 (fr) * | 2001-02-15 | 2002-08-22 | Sharp Kabushiki Kaisha | Element de source lumineuse a semi-conducteur a base de nitrure et son procede de realisation |
US7498608B2 (en) * | 2001-10-29 | 2009-03-03 | Sharp Kabushiki Kaisha | Nitride-composite semiconductor laser element, its manufacturing method, and semiconductor optical device |
US6812496B2 (en) * | 2002-01-10 | 2004-11-02 | Sharp Kabushiki Kaisha | Group III nitride semiconductor laser device |
JP2003332676A (ja) | 2002-05-08 | 2003-11-21 | Mitsubishi Electric Corp | 半導体光装置 |
US7372077B2 (en) * | 2003-02-07 | 2008-05-13 | Sanyo Electric Co., Ltd. | Semiconductor device |
WO2006054543A1 (ja) * | 2004-11-22 | 2006-05-26 | Matsushita Electric Industrial Co., Ltd. | 窒素化合物系半導体装置およびその製造方法 |
JP4617907B2 (ja) * | 2005-02-03 | 2011-01-26 | ソニー株式会社 | 光集積型半導体発光素子 |
CN101529674B (zh) * | 2006-10-17 | 2011-06-29 | 三洋电机株式会社 | 氮化物类半导体激光元件及其制造方法 |
US20080130698A1 (en) * | 2006-11-30 | 2008-06-05 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor device and method of fabricating the same |
JP2009200341A (ja) * | 2008-02-22 | 2009-09-03 | Sharp Corp | 窒化物系半導体ウェハ、窒化物系半導体レーザ素子および窒化物系半導体レーザ素子の製造方法 |
-
2009
- 2009-12-15 DE DE102009058345.9A patent/DE102009058345B4/de active Active
-
2010
- 2010-11-12 US US13/515,024 patent/US8879596B2/en active Active
- 2010-11-12 EP EP10779771.4A patent/EP2514049B1/de active Active
- 2010-11-12 WO PCT/EP2010/067402 patent/WO2011072964A1/de active Application Filing
- 2010-11-12 JP JP2012543557A patent/JP5744054B2/ja active Active
- 2010-11-12 CN CN201080057349.9A patent/CN102668277B/zh active Active
- 2010-11-12 KR KR1020127018374A patent/KR101723143B1/ko active IP Right Grant
- 2010-12-10 TW TW099143215A patent/TWI438992B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0679172U (ja) * | 1993-04-14 | 1994-11-04 | 松下電器産業株式会社 | 半導体レーザ |
JP2004095859A (ja) * | 2002-08-30 | 2004-03-25 | Sharp Corp | 半導体レーザ及びその製造方法 |
JP2007173402A (ja) * | 2005-12-20 | 2007-07-05 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置 |
JP2009088270A (ja) * | 2007-09-28 | 2009-04-23 | Sanyo Electric Co Ltd | 半導体素子の製造方法 |
JP2009200478A (ja) * | 2008-01-21 | 2009-09-03 | Sanyo Electric Co Ltd | 半導体レーザ素子およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
DE102009058345B4 (de) | 2021-05-12 |
DE102009058345A1 (de) | 2011-06-16 |
EP2514049B1 (de) | 2018-08-08 |
KR20120112559A (ko) | 2012-10-11 |
JP5744054B2 (ja) | 2015-07-01 |
EP2514049A1 (de) | 2012-10-24 |
US8879596B2 (en) | 2014-11-04 |
WO2011072964A1 (de) | 2011-06-23 |
US20120287956A1 (en) | 2012-11-15 |
CN102668277A (zh) | 2012-09-12 |
CN102668277B (zh) | 2014-06-18 |
TWI438992B (zh) | 2014-05-21 |
KR101723143B1 (ko) | 2017-04-04 |
TW201131918A (en) | 2011-09-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9209362B2 (en) | Semiconductor light emitting device and method of fabricating semiconductor light emitting device | |
JP4948307B2 (ja) | 半導体レーザ素子およびその製造方法 | |
US9070837B2 (en) | Semiconductor light-emitting device and method for manufacturing same | |
JP5426124B2 (ja) | 半導体発光装置の製造方法及び半導体発光装置 | |
JP5052636B2 (ja) | 半導体発光素子 | |
JP5139005B2 (ja) | 半導体発光素子及び半導体発光装置 | |
US7406111B2 (en) | Semiconductor laser diode and method for manufacturing the same | |
JP2010067858A (ja) | 窒化物系半導体素子およびその製造方法 | |
WO2007097411A1 (ja) | 2波長半導体発光装置及びその製造方法 | |
JP5306904B2 (ja) | 窒化物半導体発光ダイオード素子およびその製造方法 | |
JP5744054B2 (ja) | 半導体基体を製造する方法 | |
US9048348B2 (en) | Method of separating substrate and method of fabricating semiconductor device using the same | |
CN101656399B (zh) | 多束激光二极管 | |
JP5151758B2 (ja) | 発光素子 | |
WO2009107621A1 (ja) | 半導体レーザ素子およびその製造方法 | |
JP6553378B2 (ja) | 半導体発光装置 | |
JP2005086137A (ja) | GaN系発光ダイオード | |
TWI594455B (zh) | Photoelectric semiconductor chip and its manufacturing method | |
JP6423234B2 (ja) | 半導体発光素子およびその製造方法 | |
JP2007288090A (ja) | 半導体レーザ素子およびその製造方法 | |
JP2017112203A (ja) | 半導体発光素子 | |
US8878218B2 (en) | Semiconductor light-emitting device and method for manufacturing the same | |
JP2014120716A (ja) | 半導体発光装置及びその製造方法 | |
CN114823324B (zh) | 用于减小划道宽度的发光二极管芯片的制备方法 | |
JP5433798B2 (ja) | 半導体発光素子及び半導体発光装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130724 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130724 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140129 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140212 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140509 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140916 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20141201 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20141208 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150209 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150330 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150428 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5744054 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |