JP2013257977A - プラズマ処理装置及びプローブ装置 - Google Patents
プラズマ処理装置及びプローブ装置 Download PDFInfo
- Publication number
- JP2013257977A JP2013257977A JP2012132030A JP2012132030A JP2013257977A JP 2013257977 A JP2013257977 A JP 2013257977A JP 2012132030 A JP2012132030 A JP 2012132030A JP 2012132030 A JP2012132030 A JP 2012132030A JP 2013257977 A JP2013257977 A JP 2013257977A
- Authority
- JP
- Japan
- Prior art keywords
- frequency power
- pulse
- power supply
- pulse signal
- frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012545 processing Methods 0.000 title claims abstract description 149
- 239000000523 sample Substances 0.000 title claims abstract description 116
- 238000005070 sampling Methods 0.000 claims abstract description 77
- 238000001514 detection method Methods 0.000 claims abstract description 58
- 238000005259 measurement Methods 0.000 claims abstract description 44
- 230000000630 rising effect Effects 0.000 claims abstract description 13
- 239000007789 gas Substances 0.000 description 53
- 239000000758 substrate Substances 0.000 description 20
- 230000001360 synchronised effect Effects 0.000 description 16
- 239000003990 capacitor Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000003860 storage Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/3299—Feedback systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2242/00—Auxiliary systems
- H05H2242/20—Power circuits
- H05H2242/26—Matching networks
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
【解決手段】プラズマ処理装置10では、高周波電力のONとOFFとを切り替えて、上部電極30及び下部電極16のうちの一電極に供給される。プローブ検出器Pdが、給電ライン58における電気的特性を計測して計測信号を生成し、プローブ装置PAの処理部PUが、計測信号をサンプリングしてサンプル値を生成する。処理部は、高周波電力のONとOFFの切替えに対応したパルス信号を受けて、パルス信号のパルスの立ち上がりタイミングから所定のマスク期間経過後、該パルスの立ち下がりタイミングまでの間、所定のサンプリング間隔で計測信号のサンプリングを行って一以上のサンプル値を生成し、当該一以上のサンプリング値のうち立ち下がりタイミングに対して最終の一回以上のサンプリングによって得た一以上のサンプル値を検出値として採用する。
【選択図】図2
Description
Claims (7)
- 処理容器と、
前記処理容器内に処理ガスを供給するガス供給部と、
前記処理容器内に設けられた上部電極と、
前記処理容器内において前記上部電極と対向配置された下部電極を有する載置台と、
高周波電力を発生する高周波電源であり、該高周波電力のONとOFFとを切り替える、該高周波電源と、
前記高周波電源と前記上部電極又は下部電極のうち一方の電極の間に設けられた整合回路と、
前記整合回路と前記一方の電極の間に設けられた給電ラインと、
前記給電ラインにおける電気的特性を計測して計測信号を生成するプローブ検出器、及び、該計測信号をサンプリングしてサンプル値を生成する処理部を有するプローブ装置と、
を備え、
前記処理部は、前記高周波電力がONの期間に第1のレベルをとり前記高周波電力がOFFの間に第2のレベルをとるパルス信号を受けて、該パルス信号のパルスの立ち上がりタイミングから所定のマスク期間経過後、該パルスの立ち下がりタイミングまでの間、所定のサンプリング間隔で前記計測信号のサンプリングを行って一以上のサンプル値を生成し、該一以上のサンプリング値のうち前記立ち下がりタイミングに対して最終の一回以上のサンプリングによって得た一以上のサンプル値を検出値として採用する、
プラズマ処理装置。 - 前記処理部は、前記高周波電力のONとOFFとの切り替えの周波数に基づいて、周波数に応じて予め定められた採用するサンプル値の個数を求め、求めた該個数のサンプル値を前記検出値として採用する、請求項1に記載のプラズマ処理装置。
- 前記プローブ装置の前記処理部に前記パルス信号を供給し、前記高周波電力のONとOFFとを切り替えるためのパルス信号を前記高周波電源に供給するパルス制御部を更に備える、請求項1又は2に記載のプラズマ処理装置。
- 前記高周波電力の周波数とは異なる周波数を有し、該高周波電力がONの期間にONになり前記高周波電力がOFFの間にOFFとなる別の高周波電力を発生する別の高周波電源と、
前記別の高周波電源と前記給電ラインとの間に設けられた別の整合回路と、
を更に備え、
前記パルス制御部は、前記別の高周波電力のONとOFFを切り替えるためのパルス信号を前記別の高周波電源に供給する、
請求項3に記載のプラズマ処理装置。 - 前記高周波電源は、前記パルス信号を発生するパルス発生部を有する、請求項1又は2に記載のプラズマ処理装置。
- 給電ラインを介して上部電極及び下部電極の一方に供給する高周波電力のONとOFFとを切り替え可能なプラズマ処理装置の該給電ラインにおける電気的特性の検出値を生成するプローブ装置であって、
前記給電ラインにおける電気的特性を計測して計測信号を生成するプローブ検出器と、
前記計測信号をサンプリングしてサンプル値を生成する処理部と、
を備え、
前記処理部は、前記高周波電力がONの期間に第1のレベルをとり前記高周波電力がOFFの間に第2のレベルをとるパルス信号を受けて、該パルス信号のパルスの立ち上がりタイミングから所定のマスク期間経過後、該パルスの立ち下がりタイミングまでの間、所定のサンプリング間隔で前記計測信号のサンプリングを行って一以上のサンプル値を生成し、該一以上のサンプリング値のうち前記立ち下がりタイミングに対して最終の一回以上のサンプリングによって得た一以上のサンプル値を検出値として採用する、
プローブ装置。 - 前記処理部は、前記高周波電力のONとOFFとの切り替えの周波数に基づいて、周波数に応じて予め定められた採用するサンプル値の個数を求め、求めた該個数のサンプル値を前記検出値として採用する、請求項6に記載のプローブ装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012132030A JP5921964B2 (ja) | 2012-06-11 | 2012-06-11 | プラズマ処理装置及びプローブ装置 |
PCT/JP2013/064649 WO2013187218A1 (ja) | 2012-06-11 | 2013-05-27 | プラズマ処理装置及びプローブ装置 |
US14/399,309 US10229819B2 (en) | 2012-06-11 | 2013-05-27 | Plasma processing apparatus and probe apparatus |
KR1020147031272A KR102068735B1 (ko) | 2012-06-11 | 2013-05-27 | 플라즈마 처리 장치 및 프로브 장치 |
TW102119639A TWI576891B (zh) | 2012-06-11 | 2013-06-03 | 電漿處理裝置及探針裝置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012132030A JP5921964B2 (ja) | 2012-06-11 | 2012-06-11 | プラズマ処理装置及びプローブ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013257977A true JP2013257977A (ja) | 2013-12-26 |
JP5921964B2 JP5921964B2 (ja) | 2016-05-24 |
Family
ID=49758048
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012132030A Active JP5921964B2 (ja) | 2012-06-11 | 2012-06-11 | プラズマ処理装置及びプローブ装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10229819B2 (ja) |
JP (1) | JP5921964B2 (ja) |
KR (1) | KR102068735B1 (ja) |
TW (1) | TWI576891B (ja) |
WO (1) | WO2013187218A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015185698A (ja) * | 2014-03-25 | 2015-10-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
JP2016157735A (ja) * | 2015-02-23 | 2016-09-01 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
JP2016181343A (ja) * | 2015-03-23 | 2016-10-13 | 東京エレクトロン株式会社 | 電源システム、プラズマ処理装置及び電源制御方法 |
JP2019186099A (ja) * | 2018-04-12 | 2019-10-24 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP7500718B2 (ja) | 2019-10-30 | 2024-06-17 | アプライド マテリアルズ インコーポレイテッド | 基板の処理方法及び装置 |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101757818B1 (ko) | 2015-10-12 | 2017-07-26 | 세메스 주식회사 | 펄스화된 고주파 전력 모니터링 장치 및 그를 포함하는 기판 처리 장치 |
EP3627977B1 (en) * | 2017-05-16 | 2022-11-02 | Fuji Corporation | Plasma generator |
US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
KR20210107716A (ko) | 2019-01-22 | 2021-09-01 | 어플라이드 머티어리얼스, 인코포레이티드 | 펄스 전압 파형을 제어하기 위한 피드백 루프 |
US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
JP7296829B2 (ja) * | 2019-09-05 | 2023-06-23 | 東京エレクトロン株式会社 | プラズマ処理装置、処理方法、上部電極構造 |
US11462389B2 (en) | 2020-07-31 | 2022-10-04 | Applied Materials, Inc. | Pulsed-voltage hardware assembly for use in a plasma processing system |
US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
US20220399185A1 (en) | 2021-06-09 | 2022-12-15 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
US11776788B2 (en) | 2021-06-28 | 2023-10-03 | Applied Materials, Inc. | Pulsed voltage boost for substrate processing |
US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
US11694876B2 (en) | 2021-12-08 | 2023-07-04 | Applied Materials, Inc. | Apparatus and method for delivering a plurality of waveform signals during plasma processing |
US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0714696A (ja) * | 1993-06-25 | 1995-01-17 | Matsushita Electric Works Ltd | シングルプローブによるプラズマ測定方法とその装置 |
JP2007214254A (ja) * | 2006-02-08 | 2007-08-23 | Renesas Technology Corp | 半導体装置の製造方法およびプラズマ処理装置 |
JP2009231683A (ja) * | 2008-03-25 | 2009-10-08 | Tokyo Electron Ltd | プラズマ処理装置及び給電棒 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5097430A (en) * | 1990-01-16 | 1992-03-17 | Applied Materials, Inc. | Method and apparatus for displaying process end point signal based on emission concentration within a processing chamber |
TW308778B (en) * | 1995-06-07 | 1997-06-21 | Eni Inc | Aliasing sampler for plasma probe detection |
JP2002270574A (ja) * | 2001-03-07 | 2002-09-20 | Hitachi Kokusai Electric Inc | プラズマエッチング装置 |
US8404598B2 (en) * | 2009-08-07 | 2013-03-26 | Applied Materials, Inc. | Synchronized radio frequency pulsing for plasma etching |
-
2012
- 2012-06-11 JP JP2012132030A patent/JP5921964B2/ja active Active
-
2013
- 2013-05-27 KR KR1020147031272A patent/KR102068735B1/ko active IP Right Grant
- 2013-05-27 WO PCT/JP2013/064649 patent/WO2013187218A1/ja active Application Filing
- 2013-05-27 US US14/399,309 patent/US10229819B2/en active Active
- 2013-06-03 TW TW102119639A patent/TWI576891B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0714696A (ja) * | 1993-06-25 | 1995-01-17 | Matsushita Electric Works Ltd | シングルプローブによるプラズマ測定方法とその装置 |
JP2007214254A (ja) * | 2006-02-08 | 2007-08-23 | Renesas Technology Corp | 半導体装置の製造方法およびプラズマ処理装置 |
JP2009231683A (ja) * | 2008-03-25 | 2009-10-08 | Tokyo Electron Ltd | プラズマ処理装置及び給電棒 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015185698A (ja) * | 2014-03-25 | 2015-10-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
JP2016157735A (ja) * | 2015-02-23 | 2016-09-01 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
JP2016181343A (ja) * | 2015-03-23 | 2016-10-13 | 東京エレクトロン株式会社 | 電源システム、プラズマ処理装置及び電源制御方法 |
JP2019186099A (ja) * | 2018-04-12 | 2019-10-24 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP7500718B2 (ja) | 2019-10-30 | 2024-06-17 | アプライド マテリアルズ インコーポレイテッド | 基板の処理方法及び装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20150017705A (ko) | 2015-02-17 |
TWI576891B (zh) | 2017-04-01 |
TW201415517A (zh) | 2014-04-16 |
US20150114563A1 (en) | 2015-04-30 |
WO2013187218A1 (ja) | 2013-12-19 |
JP5921964B2 (ja) | 2016-05-24 |
KR102068735B1 (ko) | 2020-01-21 |
US10229819B2 (en) | 2019-03-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5921964B2 (ja) | プラズマ処理装置及びプローブ装置 | |
KR102545994B1 (ko) | 제어 방법 및 플라즈마 처리 장치 | |
JP7045152B2 (ja) | プラズマ処理方法及びプラズマ処理装置 | |
JP2020155408A (ja) | 切り替えモードイオンエネルギー分布システムを制御する方法 | |
US10250217B2 (en) | Method for impedance matching of plasma processing apparatus | |
WO2019239944A1 (ja) | プラズマ処理装置及びプラズマ処理装置の高周波電源を制御する方法 | |
US9663858B2 (en) | Plasma processing apparatus | |
KR102265231B1 (ko) | 플라즈마 처리 장치 | |
KR20150046217A (ko) | 스위칭 모드 이온 에너지 분포 시스템을 교정하기 위한 시스템 및 방법 | |
US20150262794A1 (en) | Plasma processing method | |
TW201415522A (zh) | 用於監控切換模式離子能量分佈系統的錯誤、異常與其它特徵之系統與方法 | |
CN111430209B (zh) | 等离子体处理装置 | |
US20110209827A1 (en) | Automatic matching unit and plasma processing apparatus | |
US11037761B2 (en) | Control method and plasma processing apparatus | |
US20200185193A1 (en) | Plasma processing apparatus and etching method | |
JP4606944B2 (ja) | プラズマ処理装置およびインピーダンス調整方法 | |
JP2010238730A (ja) | プラズマ処理装置 | |
US20220108878A1 (en) | Plasma processing apparatus and plasma processing method | |
US20230050506A1 (en) | Plasma processing apparatus and plasma processing method | |
KR20210077597A (ko) | 플라즈마 처리 장치 및 플라즈마 처리 방법 | |
JP2020096176A (ja) | プラズマ処理装置及びエッチング方法 | |
US11908665B2 (en) | Plasma processing apparatus and measurement method | |
JP2016115818A (ja) | プラズマ処理装置 | |
JP7302060B2 (ja) | クリーニング方法及びプラズマ処理装置 | |
US20240242945A1 (en) | Additional stray capacitor as another tuning knob for 1-supply ev source |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150226 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20151201 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160119 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160329 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160413 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5921964 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |