JP2013251526A - 薄膜トランジスター、これを備える薄膜トランジスター表示板およびその製造方法 - Google Patents
薄膜トランジスター、これを備える薄膜トランジスター表示板およびその製造方法 Download PDFInfo
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- JP2013251526A JP2013251526A JP2013027373A JP2013027373A JP2013251526A JP 2013251526 A JP2013251526 A JP 2013251526A JP 2013027373 A JP2013027373 A JP 2013027373A JP 2013027373 A JP2013027373 A JP 2013027373A JP 2013251526 A JP2013251526 A JP 2013251526A
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- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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Abstract
【解決手段】ゲート電極と、前記ゲート電極の上または下に位置するゲート絶縁膜と、前記ゲート絶縁膜を挟んで前記ゲート電極と重なり合うチャネル領域と、前記チャネル領域と同じ層に位置し、前記チャネル領域と接続されており、前記チャネル領域を中心として相対向するソース領域およびドレイン領域と、を備え、前記チャネル領域と、前記ソース領域および前記ドレイン領域は酸化物半導体を含み、前記ソース領域および前記ドレイン領域のキャリア濃度が前記チャネル領域のキャリア濃度よりも大きいことを特徴とする薄膜トランジスター。
【選択図】図5
Description
70:遮光膜
110:絶縁基板
120:バッファー層
122:ゲートパターン
124:ゲート電極
140:ゲート絶縁膜
159:半導体物質層
150:半導体パターン
153:ソース領域
154:チャネル領域
155:ドレイン領域
149:絶縁物質層
141:絶縁パターン
142:絶縁層
150:ゲート層
164:エッチストッパー
181、183、185:コンタクト孔
173:ソース電極
175:ドレイン電極
180、180a:保護膜
180b:有機膜
191:画素電極
70:遮光膜
110:絶縁基板
120:バッファー層
122:ゲートパターン
124:ゲート電極
140:ゲート絶縁膜
159:半導体物質層
150:半導体パターン
153:ソース領域
154:チャネル領域
155:ドレイン領域
149:絶縁物質層
141:絶縁パターン
142:絶縁層
150:ゲート層
164:エッチストッパー
181、183、185:コンタクト孔
173:ソース電極
175:ドレイン電極
180、180a:保護膜
180b:有機膜
191:画素電極
Claims (14)
- ゲート電極と、
前記ゲート電極の上または下に位置するゲート絶縁膜と、
前記ゲート絶縁膜を挟んで前記ゲート電極と重なり合うチャネル領域と、
前記チャネル領域と同じ層に位置し、前記チャネル領域と接続されており、前記チャネル領域を中心として相対向するソース領域およびドレイン領域と、
を備え、
前記チャネル領域と、前記ソース領域および前記ドレイン領域は酸化物半導体を含み、前記ソース領域および前記ドレイン領域のキャリア濃度が前記チャネル領域のキャリア濃度よりも大きいことを特徴とする薄膜トランジスター。 - 前記ソース領域および前記ドレイン領域は、還元された前記酸化物半導体を含むことを特徴とする請求項1に記載の薄膜トランジスター。
- 前記ソース領域および前記ドレイン領域は、フッ素(F)、水素(H)および硫黄(S)のうちの少なくとも一種をさらに含むことを特徴とする請求項2に記載の薄膜トランジスター。
- 前記ソース領域および前記ドレイン領域が含むフッ素(F)、水素(H)および硫黄(S)のうちの少なくとも一種の濃度は、1015個/cm3以上であることを特徴とする請求項3に記載の薄膜トランジスター。
- 前記チャネル領域のキャリア濃度が1018個/cm3未満であり、前記ソース領域および前記ドレイン領域のキャリア濃度は1018個/cm3以上であることを特徴とする請求項4に記載の薄膜トランジスター。
- 前記ソース領域と接続されたソース電極および前記ドレイン領域と接続されたドレイン電極をさらに備えることを特徴とする請求項5に記載の薄膜トランジスター。
- 前記チャネル領域を覆うエッチストッパーをさらに備え、
前記エッチストッパーは、前記ソース領域および前記ドレイン領域と実質的に重なり合わないことを特徴とする請求項6に記載の薄膜トランジスター。 - 前記エッチストッパーの縁部の境界および前記ゲート電極の縁部の境界は、実質的に互いに位置合わせされていることを特徴とする請求項7に記載の薄膜トランジスター。
- 前記チャネル領域と、前記ソース領域および前記ドレイン領域の上に位置する保護膜と、
前記保護膜の上に位置し、前記チャネル領域と重なり合う上部ゲート電極と、
をさらに備えることを特徴とする請求項8に記載の薄膜トランジスター。 - 前記ゲート絶縁膜および前記ゲート電極は、前記チャネル領域の上に位置し、
前記ゲート電極の縁部の境界と、前記ゲート絶縁膜の縁部の境界および前記チャネル領域の縁部の境界は実質的に互いに位置合わせされていることを特徴とする請求項5に記載の薄膜トランジスター。 - 絶縁基板の上にゲート電極を形成するステップと、
前記ゲート電極の上にゲート絶縁膜を積層するステップと、
前記ゲート絶縁膜の上に半導体パターンを形成するステップと、
前記半導体パターンの上に前記半導体パターンを横切って重なり合うエッチストッパーを形成するステップと、
前記エッチストッパーによって覆われておらずに露出された前記半導体パターンを処理して、前記エッチストッパーによって覆われたチャネル領域および前記チャネル領域を中心として相対向するソース領域およびドレイン領域を形成するステップと、
を含み、
前記ソース領域および前記ドレイン領域のキャリア濃度が、前記チャネル領域のキャリア濃度よりも大きいことを特徴とする薄膜トランジスター表示板の製造方法。 - 前記半導体パターンを処理するステップは、前記半導体パターンを還元処理するステップを含むことを特徴とする請求項11に記載の薄膜トランジスター表示板の製造方法。
- 前記半導体パターンを処理するステップは、四フッ化炭素(CF4)、三フッ化窒素(NF3)、六フッ化硫黄(SF6)、メタン(CH4)のうちの少なくとも一種を含むガスを用いて、前記半導体パターンをフッ素(F)、水素(H)、硫黄(S)のうちの少なくとも一種でドーピングするステップを含むことを特徴とする請求項12に記載の薄膜トランジスター表示板の製造方法。
- 絶縁基板の上に酸化物半導体を含む半導体パターンを形成するステップと、
前記半導体パターンの上に絶縁物質を積層して絶縁物質層を形成するステップと、
前記絶縁物質層の上にゲート電極を形成するステップと、
前記ゲート電極をエッチングマスクとして前記絶縁物質層をパターニングしてゲート絶縁層を形成し、前記半導体パターンの一部を露出させるステップと、
前記露出された半導体パターンを処理して前記ゲート電極によって覆われたチャネル領域および前記チャネル領域を中心として相対向するソース領域およびドレイン領域を形成するステップと、
を含み、
前記ソース領域および前記ドレイン領域のキャリア濃度が、前記チャネル領域のキャリア濃度よりも大きいことを特徴とする薄膜トランジスター表示板の製造方法。
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Also Published As
Publication number | Publication date |
---|---|
CN103456793B (zh) | 2018-06-22 |
US20130320328A1 (en) | 2013-12-05 |
US9793377B2 (en) | 2017-10-17 |
US20150333154A1 (en) | 2015-11-19 |
US9093540B2 (en) | 2015-07-28 |
US9455333B2 (en) | 2016-09-27 |
CN103456793A (zh) | 2013-12-18 |
US20150333184A1 (en) | 2015-11-19 |
USRE48290E1 (en) | 2020-10-27 |
KR20130136063A (ko) | 2013-12-12 |
JP6184122B2 (ja) | 2017-08-23 |
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