JP2013249537A - 酸化物半導体スパッタリング用ターゲット、これを用いた薄膜トランジスタの製造方法 - Google Patents
酸化物半導体スパッタリング用ターゲット、これを用いた薄膜トランジスタの製造方法 Download PDFInfo
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- JP2013249537A JP2013249537A JP2013116031A JP2013116031A JP2013249537A JP 2013249537 A JP2013249537 A JP 2013249537A JP 2013116031 A JP2013116031 A JP 2013116031A JP 2013116031 A JP2013116031 A JP 2013116031A JP 2013249537 A JP2013249537 A JP 2013249537A
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- 239000010409 thin film Substances 0.000 title claims abstract description 81
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 238000005477 sputtering target Methods 0.000 title claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 14
- 239000000203 mixture Substances 0.000 claims abstract description 14
- 229910052738 indium Inorganic materials 0.000 claims abstract description 13
- 229910052718 tin Inorganic materials 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000004544 sputter deposition Methods 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 239000004973 liquid crystal related substance Substances 0.000 claims description 10
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 4
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 4
- 229910003437 indium oxide Inorganic materials 0.000 claims description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 47
- 239000000758 substrate Substances 0.000 description 19
- 239000010408 film Substances 0.000 description 13
- 238000009792 diffusion process Methods 0.000 description 5
- 230000002265 prevention Effects 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000012788 optical film Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910006398 SnNx Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000012388 gravitational sedimentation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000007569 slipcasting Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
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- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Thin Film Transistor (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
【解決手段】スパッタリング用ターゲットは、薄膜トランジスタのアクティブ層を蒸着させるためのスパッタリング工程に用いられ、In、Sn、Ga、O組成を基盤とする物質からなることを特徴とするものであり、アクティブ層を有する薄膜トランジスタはこれにより蒸着され、ディスプレイ装置はこれを具備する。
【選択図】図2
Description
110 ゲート電極
120 ゲート絶縁膜
130 アクティブ層
135 オーミックコンタクト層
140 ソース電極
150 ドレイン電極
10 基板
CH チャンネル領域
Claims (8)
- 薄膜トランジスタのアクティブ層を蒸着させるためのスパッタリング工程に用いられるスパッタリング用ターゲットであって、
In、Sn、Ga、O組成を基盤とする物質からなることを特徴とする酸化物半導体スパッタリング用ターゲット。 - 酸化ガリウム、酸化スズ、及び酸化インジウムからなり、
(In+Ga+Sn)に対して、Inが60〜70at.%、Gaが10〜25at.%、及びSnが5〜30at.%であることを特徴とする請求項1に記載の酸化物半導体スパッタリング用ターゲット。 - 請求項1または2に記載の酸化物半導体スパッタリング用ターゲットを用いてアクティブ層を蒸着することを特徴とする薄膜トランジスタの製造方法。
- 前記アクティブ層を蒸着した後、前記アクティブ層を200〜400℃でアニールすることを特徴する請求項3に記載の薄膜トランジスタの製造方法。
- 前記アクティブ層を蒸着した後、前記アクティブ層を250〜350℃でアニールすることを特徴する請求項4に記載の薄膜トランジスタの製造方法。
- 前記薄膜トランジスタは、液晶ディスプレイ装置または有機発光ディスプレイ装置に備えられる薄膜トランジスタであることを特徴とする請求項3に記載の薄膜トランジスタの製造方法。
- In、Sn、Ga、O組成を基盤とする物質からなるアクティブ層を備えることを薄膜トランジスタ。
- 前記アクティブ層は、(In+Ga+Sn)に対して、Inが60〜70at.%、Gaが10〜25at.%、及びSnが5〜30at.%の含量比を有することを特徴とする請求項7に記載の薄膜トランジスタ。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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KR20120057851 | 2012-05-31 | ||
KR10-2012-0057851 | 2012-05-31 | ||
KR1020130051644A KR101405257B1 (ko) | 2012-05-31 | 2013-05-08 | 산화물 반도체 스퍼터링용 타겟, 및 이를 이용한 박막 트랜지스터 제조방법 |
KR10-2013-0051644 | 2013-05-08 |
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JP2013249537A true JP2013249537A (ja) | 2013-12-12 |
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JP2013116031A Pending JP2013249537A (ja) | 2012-05-31 | 2013-05-31 | 酸化物半導体スパッタリング用ターゲット、これを用いた薄膜トランジスタの製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9224820B2 (ja) |
EP (1) | EP2669950B1 (ja) |
JP (1) | JP2013249537A (ja) |
CN (1) | CN103451607B (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170037647A (ko) | 2014-09-02 | 2017-04-04 | 가부시키가이샤 고베 세이코쇼 | 박막 트랜지스터 |
KR20180109961A (ko) | 2016-02-26 | 2018-10-08 | 가부시키가이샤 고베 세이코쇼 | 산화물 반도체층을 포함하는 박막 트랜지스터 |
KR20190113857A (ko) | 2017-02-01 | 2019-10-08 | 이데미쓰 고산 가부시키가이샤 | 산화물 반도체막, 박막 트랜지스터, 산화물 소결체, 및 스퍼터링 타깃 |
KR20190117528A (ko) | 2017-02-22 | 2019-10-16 | 이데미쓰 고산 가부시키가이샤 | 산화물 반도체막, 박막 트랜지스터, 산화물 소결체 및 스퍼터링 타깃 |
KR20200138001A (ko) | 2019-05-30 | 2020-12-09 | 가부시키가이샤 고베 세이코쇼 | 산화물 반도체 박막, 박막 트랜지스터 및 스퍼터링 타겟 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10163695B1 (en) * | 2017-06-27 | 2018-12-25 | Lam Research Corporation | Self-forming barrier process |
KR20220094735A (ko) * | 2020-12-29 | 2022-07-06 | 에이디알씨 주식회사 | 결정성 산화물 반도체 박막 및 그 형성 방법, 박막 트랜지스터 및 그 제조 방법, 표시 패널 및 전자 장치 |
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2013
- 2013-05-29 US US13/904,344 patent/US9224820B2/en active Active
- 2013-05-31 CN CN201310213423.7A patent/CN103451607B/zh active Active
- 2013-05-31 EP EP13169986.0A patent/EP2669950B1/en not_active Not-in-force
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Cited By (7)
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KR20170037647A (ko) | 2014-09-02 | 2017-04-04 | 가부시키가이샤 고베 세이코쇼 | 박막 트랜지스터 |
KR20180109961A (ko) | 2016-02-26 | 2018-10-08 | 가부시키가이샤 고베 세이코쇼 | 산화물 반도체층을 포함하는 박막 트랜지스터 |
KR20190113857A (ko) | 2017-02-01 | 2019-10-08 | 이데미쓰 고산 가부시키가이샤 | 산화물 반도체막, 박막 트랜지스터, 산화물 소결체, 및 스퍼터링 타깃 |
US11728390B2 (en) | 2017-02-01 | 2023-08-15 | Idemitsu Kosan Co., Ltd. | Oxide semiconductor film, thin film transistor, oxide sintered body, and sputtering target |
KR20190117528A (ko) | 2017-02-22 | 2019-10-16 | 이데미쓰 고산 가부시키가이샤 | 산화물 반도체막, 박막 트랜지스터, 산화물 소결체 및 스퍼터링 타깃 |
US11251310B2 (en) | 2017-02-22 | 2022-02-15 | Idemitsu Kosan Co., Ltd. | Oxide semiconductor film, electronic device comprising thin film transistor, oxide sintered body and sputtering target |
KR20200138001A (ko) | 2019-05-30 | 2020-12-09 | 가부시키가이샤 고베 세이코쇼 | 산화물 반도체 박막, 박막 트랜지스터 및 스퍼터링 타겟 |
Also Published As
Publication number | Publication date |
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CN103451607A (zh) | 2013-12-18 |
CN103451607B (zh) | 2015-11-04 |
US20130320336A1 (en) | 2013-12-05 |
US9224820B2 (en) | 2015-12-29 |
EP2669950A1 (en) | 2013-12-04 |
EP2669950B1 (en) | 2015-07-08 |
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