JP2013191625A - 回路接続材料、及びそれを用いた実装体の製造方法 - Google Patents
回路接続材料、及びそれを用いた実装体の製造方法 Download PDFInfo
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- JP2013191625A JP2013191625A JP2012054831A JP2012054831A JP2013191625A JP 2013191625 A JP2013191625 A JP 2013191625A JP 2012054831 A JP2012054831 A JP 2012054831A JP 2012054831 A JP2012054831 A JP 2012054831A JP 2013191625 A JP2013191625 A JP 2013191625A
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- adhesive layer
- coupling agent
- silane coupling
- adhesive
- circuit connection
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- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
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Abstract
【解決手段】シランカップリング剤と、導電性粒子とを含有する第1の接着層と、リン酸エステル化合物を含有する第2の接着層とを有する。2層構造の回路接続材料のそれぞれの層にリン酸エステル化合物とシランカップリング剤を分けて配合することにより、シランカップリング剤が加水分解するのを防ぎ、優れた貯蔵安定性を得ることができる。また、シランカップリング剤を含有する第1の接着層に導電性粒子が含まれているため、圧着時、第1の電子部品との密着性を向上させるとともに導電性粒子の粒子捕捉率を向上させることができる。
【選択図】図1
Description
1.回路接続材料及びその製造方法
2.実装体の製造方法
3.実施例
図1は、シランカップリング剤による無機物に対する密着性の向上を説明するための図である。図1に示すように、シランカップリング剤は、一分子中に有機官能基と加水分解基を有しており、圧着時に無機材料の水酸基と脱水縮合することにより、無機材料との密着性を向上させることができる。
次に、上述した回路接続材料を用いた電子部品の実装方法について説明する。本実施の形態における電子部品の実装方法は、第1の電子部品の電極上に、シランカップリング剤と、導電性粒子とを含有する第1の接着層と、リン酸エステル化合物を含有する第2の接着層とを有する異方性導電フィルム、第2の電子部品を、第1の接着層が第1の電子部品上となるように順に配置する工程と、第2の電子部品の上面から圧着ヘッドにて押圧する工程とを有する。これにより、第1の電子部品の電極と第2の電子部品の電極とを導電性粒子を介して接続するとともに、異方性導電フィルムを硬化させることができる。
以下、本発明の実施例について説明する。ここでは、シランカップリング剤と、導電性粒子とを含有する第1の接着層と、リン酸エステル化合物を含有する第2の接着層とを有する異方性導電フィルムを作製し、貯蔵安定性加速試験を行った。また、第1の接着層と第2の接着層の溶融粘度及び最低溶融粘度到達温度に対する接着強度の影響について調べた。なお、本発明はこれらの実施例に限定されるものではない。
異方性導電フィルムを30℃−80%RHのオーブンにて8時間フィルムエージングを行った。そして、エージング後の異方性導電フィルムを用いて実装体を作製し、接着強度を測定した。
ガラス基板とCOF(Chip On Film)の実装体の初期の接着強度について、引っ張り試験機(品番:RTC1201、AND社製)を用いて測定した。測定速度を50mm/secとし、COFを90度方向に引き上げた時の接着強度を測定した。
異方性導電フィルムを500μmの厚みになるように重ね合わせ、溶融粘度計(HAAKE Rheostress RS−150、Thermo Fisher Scientific社製)を用いて、昇温温度10℃/min、周波数1Hz、加圧力1N、測定温度範囲30〜180℃の条件で測定を行った。
[実施例1]
(第1の接着層の作製)
フェノキシ樹脂(品名:YP−50、東都化成社製)を固形分換算で70質量部、及びラジカル重合成樹脂(品名:EB−600、ダイセルサイテック社製)を30質量部で構成された組成物中に、平均粒子径5μmの導電性粒子(品名:AUL705、積水化学工業社製)を粒子密度10000個/mm2になるよう分散させた。次いで、反応開始剤(品名:パーヘキサC、日本油脂社製)を2質量部、及びシランカップリング剤(品名:KBM−503、信越化学工業製)を2質量部加えて調整した。この接着剤組成物をPETフィルム上にバーコーターを用いて塗布し、オーブンで乾燥させ、厚さ10μmの第1の接着層を作製した。
フェノキシ樹脂(品名:YP−50、東都化成社製)を固形分換算で60質量部、(品名:EB−600、ダイセルサイテック社製)を40質量部、(品名:パーヘキサC、日本油脂社製)を2質量部、及びリン酸エステルアクリレート(品名:P−2M、共栄化学社製)を2質量部として構成された接着剤組成物をPETフィルム上にバーコーターを用いて塗布し、オーブンで乾燥させ、厚さ10μmの第2の接着層を作製した。
厚さ10μmの第1の接着層と、厚さ10μmの第2の接着層とを貼り付け、2層構造の異方性導電フィルムを作製した。
評価用ガラス基板(IZO(Indium Zinc Oxide)250nmコーティングガラス)に1.5mm幅にスリットされた異方性導電フィルムを、150μm厚の緩衝材(ポリテトラフルオロエチレン)を用い、1.5mm幅のツールの仮圧着機にて70℃−1MPa−1secの条件で仮圧着した。次いで、評価用COF(50μmP、Cu8μmt−Snメッキ、38μmt)を同圧着機にて80℃−0.5MPa−0.5secの条件で仮固定し、最後に190℃−2MPa−10secの条件にて1.5mm幅のツールを用いた本圧着機で圧着し、実装体を作製した。
表1に、実施例1の評価結果を示す。実施例1において、第1の接着層及び第2の接着層の溶融粘度は、それぞれ1830Pa・s、1320Pa・sであり、第1の接着層及び第2の接着層の最低溶融粘度到達温度は、それぞれ117℃、110℃であった。また、貯蔵安定性の加速試験前及び加速試験後の接着強度は、それぞれ8.0N/cm、7.8N/cmであった。
(第1の接着層)
フェノキシ樹脂(品名:YP−50、東都化成社製)を70質量部、ラジカル重合成樹脂(品名:EB−600、ダイセルサイテック社製)を30質量部で構成された組成物中に、平均粒子径5μmの導電性粒子(品名:AUL705、積水化学工業社製)を粒子密度10000個/mm2になるよう分散させた。次いで、反応開始剤(品名:パーヘキサC、日本油脂社製)を2質量部、シランカップリング剤(品名:KBM−503、信越化学工業製)を2質量部、及びリン酸エステルアクリレート(品名:P−2M、共栄化学社製)を2質量部加えて調整し、この接着剤組成物をPETフィルム上にバーコーターを用いて塗布し、オーブンで乾燥させ、厚さ10μmの第1の接着層を作製した。
フェノキシ樹脂(品名:YP−50、東都化成社製)を固形分換算で60質量部、(品名:EB−600、ダイセルサイテック社製)を40質量部、反応開始剤(品名:パーヘキサC、日本油脂社製)を2質量部、シランカップリング剤(品名:KBM−503、信越化学工業製)を2質量部及びリン酸エステルアクリレート(品名:P−2M、共栄化学社製)を2質量部として構成された接着剤組成物をPETフィルム上にバーコーターを用いて塗布し、オーブンで乾燥させ、厚さ10μmの第2の接着層を作製した。
表1に、比較例1の評価結果を示す。比較例1において、第1の接着層及び第2の接着層の溶融粘度は、それぞれ1830Pa・s、1320Pa・sであり、第1の接着層及び第2の接着層の最低溶融粘度到達温度は、それぞれ117℃、110℃であった。また、貯蔵安定性の加速試験前及び加速試験後の接着強度は、それぞれ7.9N/cm、2.3N/cmであった。
[実施例2]
(第2の接着層)
フェノキシ樹脂(品名:YP−50、東都化成社製)を固形分換算で50質量部、(品名:EB−600、ダイセルサイテック社製)を50質量部、反応開始剤(品名:パーヘキサC、日本油脂社製)を2質量部、及びリン酸エステルアクリレート(品名:P−2M、共栄化学社製)を2質量部として構成された接着剤組成物をPETフィルム上にバーコーターを用いて塗布し、オーブンで乾燥させ、厚さ10μmの第2の接着層を作製した。
表1に、実施例2の評価結果を示す。実施例2において、第1の接着層及び第2の接着層の溶融粘度は、それぞれ1830Pa・s、830Pa・sであり、第1の接着層及び第2の接着層の最低溶融粘度到達温度は、それぞれ117℃、112℃であった。また、貯蔵安定性の加速試験前及び加速試験後の接着強度は、それぞれ8.1N/cm、7.9N/cmであった。
(第2の接着層)
フェノキシ樹脂(品名:YP−70、東都化成社製)を固形分換算で60質量部、(品名:EB−600、ダイセルサイテック社製)を40質量部、反応開始剤(品名:パーヘキサC、日本油脂社製)を2質量部、及びリン酸エステルアクリレート(品名:P−2M、共栄化学社製)を2質量部として構成された接着剤組成物をPETフィルム上にバーコーターを用いて塗布し、オーブンで乾燥させ、厚さ10μmの第2の接着層を作製した。
表1に、比較例2の評価結果を示す。比較例2において、第1の接着層及び第2の接着層の溶融粘度は、それぞれ1830Pa・s、530Pa・sであり、第1の接着層及び第2の接着層の最低溶融粘度到達温度は、それぞれ117℃、108℃であった。また、貯蔵安定性の加速試験前及び加速試験後の接着強度は、それぞれ2.8N/cm、2.5N/cmであった。
[実施例3]
(第2の接着層)
フェノキシ樹脂(品名:YP−50、東都化成社製)を固形分換算で60質量部、(品名:EB−600、ダイセルサイテック社製)を40質量部、反応開始剤(品名:パーヘキサC、日本油脂社製)を3質量部、及びリン酸エステルアクリレート(品名:P−2M、共栄化学社製)を2質量部として構成された接着剤組成物をPETフィルム上にバーコーターを用いて塗布し、オーブンで乾燥させ、厚さ10μmの第2の接着層を作製した。
表3に、実施例3の評価結果を示す。実施例3において、第1の接着層及び第2の接着層の溶融粘度は、それぞれ1830Pa・s、1320Pa・sであり、第1の接着層及び第2の接着層の最低溶融粘度到達温度は、それぞれ117℃、102℃であった。また、貯蔵安定性の加速試験前及び加速試験後の接着強度は、それぞれ8.2N/cm、8.0N/cmであった。
(第2の接着層)
フェノキシ樹脂(品名:YP−50、東都化成社製)を固形分換算で60質量部、(品名:EB−600、ダイセルサイテック社製)を40質量部、反応開始剤(品名:パーヘキサC、日本油脂社製)を5質量部、及びリン酸エステルアクリレート(品名:P−2M、共栄化学社製)を2質量部として構成された接着剤組成物をPETフィルム上にバーコーターを用いて塗布し、オーブンで乾燥させ、厚さ10μmの第2の接着層を作製した。
表3に、比較例3の評価結果を示す。比較例3において、第1の接着層及び第2の接着層の溶融粘度は、それぞれ1830Pa・s、1320Pa・sであり、第1の接着層及び第2の接着層の最低溶融粘度到達温度は、それぞれ117℃、97℃であった。また、貯蔵安定性の加速試験前及び加速試験後の接着強度は、それぞれ3.2N/cm、2.8N/cmであった。
(第2の接着層)
フェノキシ樹脂(品名:YP−70、東都化成社製)を固形分換算で60質量部、(品名:EB−600、ダイセルサイテック社製)を40質量部、反応開始剤(品名:パーヘキサC、日本油脂社製)を5質量部、及びリン酸エステルアクリレート(品名:P−2M、共栄化学社製)を2質量部として構成された接着剤組成物をPETフィルム上にバーコーターを用いて塗布し、オーブンで乾燥させ、厚さ10μmの第2の接着層を作製した。
表3に、比較例4の評価結果を示す。比較例4において、第1の接着層及び第2の接着層の溶融粘度は、それぞれ1830Pa・s、530Pa・sであり、第1の接着層及び第2の接着層の最低溶融粘度到達温度は、それぞれ117℃、98℃であった。また、貯蔵安定性の加速試験前及び加速試験後の接着強度は、それぞれ3.2N/cm、2.8N/cmであった。
Claims (6)
- シランカップリング剤と、導電性粒子とを含有する第1の接着層と、
リン酸エステル化合物を含有する第2の接着層と
を有する回路接続材料。 - 前記第1の接着層の溶融粘度と、前記第2の接着層の溶融粘度との差が1000Pa・s以下である請求項1に記載の回路接続材料。
- 前記第1の接着層の最低溶融粘度到達温度と、第2の接着層の最低溶融粘度到達温度との差が15℃以下である請求項1又は2に記載の回路接続材料。
- 前記第1の接着剤及び前記第2の接着剤は、ラジカル重合性樹脂と、ラジカル重合開始剤とを含有する請求項1乃至3のいずれか1項に記載の回路接続材料。
- 第1の電子部品の電極上に、シランカップリング剤と、導電性粒子とを含有する第1の接着層と、リン酸エステル化合物を含有する第2の接着層とを有する異方性導電フィルム、第2の電子部品を、前記第1の接着層が前記第1の電子部品上となるように順に配置する工程と、
前記第2の電子部品の上面から圧着ヘッドにて押圧する工程と
を有する実装体の製造方法。 - 前記第1の電子部品が、シリコン窒化膜がコーティングされたガラス基板である請求項5に記載の実装体の製造方法。
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KR20147028179A KR20140142285A (ko) | 2012-03-12 | 2013-02-27 | 회로 접속 재료, 및 그것을 사용한 실장체의 제조 방법 |
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Publication number | Priority date | Publication date | Assignee | Title |
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KR20180079371A (ko) | 2015-11-04 | 2018-07-10 | 히타치가세이가부시끼가이샤 | 접착제 조성물 및 구조체 |
KR20180079370A (ko) | 2015-11-04 | 2018-07-10 | 히타치가세이가부시끼가이샤 | 접착제 조성물 및 구조체 |
KR20180084930A (ko) | 2015-11-25 | 2018-07-25 | 히타치가세이가부시끼가이샤 | 접착제 조성물 및 구조체 |
KR20190058614A (ko) | 2016-10-11 | 2019-05-29 | 히타치가세이가부시끼가이샤 | 접속 구조체, 회로 접속 부재 및 접착제 조성물 |
JP2019104869A (ja) * | 2017-12-14 | 2019-06-27 | 日立化成株式会社 | 回路接続用接着剤組成物及び回路接続構造体 |
Families Citing this family (3)
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JP6177642B2 (ja) * | 2013-09-26 | 2017-08-09 | デクセリアルズ株式会社 | 接続フィルム、接続構造体、接続構造体の製造方法、接続方法 |
JP2016184521A (ja) | 2015-03-26 | 2016-10-20 | オートモーティブエナジーサプライ株式会社 | 非水電解質二次電池 |
JP6431572B2 (ja) * | 2017-07-12 | 2018-11-28 | デクセリアルズ株式会社 | 接続フィルム、接続フィルムの製造方法、接続構造体、接続構造体の製造方法及び接続方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000234083A (ja) * | 1998-10-13 | 2000-08-29 | Sumitomo Bakelite Co Ltd | 異方導電性接着剤の製造方法及びその方法により製造された接着剤を用いて製作された電子機器 |
JP2004043603A (ja) * | 2002-07-10 | 2004-02-12 | Bridgestone Corp | 異方性導電フィルム |
JP2005120220A (ja) * | 2003-10-16 | 2005-05-12 | Bridgestone Corp | 異方性導電フィルム |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW459032B (en) * | 1998-03-18 | 2001-10-11 | Sumitomo Bakelite Co | An anisotropic conductive adhesive and method for preparation thereof and an electronic apparatus using said adhesive |
JP2001254058A (ja) * | 2000-01-06 | 2001-09-18 | Sumitomo Bakelite Co Ltd | 異方導電性接着剤 |
CN104059547B (zh) * | 2008-09-30 | 2016-08-24 | 迪睿合电子材料有限公司 | 各向异性导电粘结剂及使用该粘结剂的连接结构体的制备方法 |
-
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2013
- 2013-02-27 KR KR20147028179A patent/KR20140142285A/ko not_active Application Discontinuation
- 2013-02-27 WO PCT/JP2013/055046 patent/WO2013136979A1/ja active Application Filing
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000234083A (ja) * | 1998-10-13 | 2000-08-29 | Sumitomo Bakelite Co Ltd | 異方導電性接着剤の製造方法及びその方法により製造された接着剤を用いて製作された電子機器 |
JP2004043603A (ja) * | 2002-07-10 | 2004-02-12 | Bridgestone Corp | 異方性導電フィルム |
JP2005120220A (ja) * | 2003-10-16 | 2005-05-12 | Bridgestone Corp | 異方性導電フィルム |
Cited By (8)
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KR20180079371A (ko) | 2015-11-04 | 2018-07-10 | 히타치가세이가부시끼가이샤 | 접착제 조성물 및 구조체 |
KR20180079370A (ko) | 2015-11-04 | 2018-07-10 | 히타치가세이가부시끼가이샤 | 접착제 조성물 및 구조체 |
KR20180084930A (ko) | 2015-11-25 | 2018-07-25 | 히타치가세이가부시끼가이샤 | 접착제 조성물 및 구조체 |
KR20190058614A (ko) | 2016-10-11 | 2019-05-29 | 히타치가세이가부시끼가이샤 | 접속 구조체, 회로 접속 부재 및 접착제 조성물 |
KR20220107095A (ko) | 2016-10-11 | 2022-08-01 | 쇼와덴코머티리얼즈가부시끼가이샤 | 접속 구조체, 회로 접속 부재 및 접착제 조성물 |
KR20240014613A (ko) | 2016-10-11 | 2024-02-01 | 가부시끼가이샤 레조낙 | 접속 구조체, 회로 접속 부재 및 접착제 조성물 |
JP2019104869A (ja) * | 2017-12-14 | 2019-06-27 | 日立化成株式会社 | 回路接続用接着剤組成物及び回路接続構造体 |
JP7039984B2 (ja) | 2017-12-14 | 2022-03-23 | 昭和電工マテリアルズ株式会社 | 回路接続用接着剤組成物及び回路接続構造体 |
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TW201343872A (zh) | 2013-11-01 |
WO2013136979A1 (ja) | 2013-09-19 |
JP5934528B2 (ja) | 2016-06-15 |
KR20140142285A (ko) | 2014-12-11 |
TWI548718B (zh) | 2016-09-11 |
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