JP2013081946A - アブレーション加工方法 - Google Patents
アブレーション加工方法 Download PDFInfo
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- JP2013081946A JP2013081946A JP2011221705A JP2011221705A JP2013081946A JP 2013081946 A JP2013081946 A JP 2013081946A JP 2011221705 A JP2011221705 A JP 2011221705A JP 2011221705 A JP2011221705 A JP 2011221705A JP 2013081946 A JP2013081946 A JP 2013081946A
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- protective film
- laser beam
- ablation
- processing
- powder
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- 238000002679 ablation Methods 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 21
- 230000001681 protective effect Effects 0.000 claims abstract description 36
- 239000000843 powder Substances 0.000 claims abstract description 30
- 239000011347 resin Substances 0.000 claims abstract description 29
- 229920005989 resin Polymers 0.000 claims abstract description 29
- 239000007788 liquid Substances 0.000 claims abstract description 27
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 14
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 14
- 238000003672 processing method Methods 0.000 claims description 12
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 9
- 229910044991 metal oxide Inorganic materials 0.000 claims description 8
- 150000004706 metal oxides Chemical class 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 description 12
- 239000002202 Polyethylene glycol Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 229920001223 polyethylene glycol Polymers 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000002390 adhesive tape Substances 0.000 description 3
- 230000008033 biological extinction Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000003331 infrared imaging Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/16—Removal of by-products, e.g. particles or vapours produced during treatment of a workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/18—Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/361—Removing material for deburring or mechanical trimming
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
Abstract
【解決手段】 被加工物にレーザビームを照射してアブレーション加工を施すアブレーション加工方法であって、少なくともアブレーション加工すべき被加工物の領域にレーザビームの波長に対して吸収性を有する粉末を混入した液状樹脂を塗布して該粉末入り保護膜を形成する保護膜形成工程と、該保護膜形成工程を実施した後、該保護膜が形成された被加工物の領域にレーザビームを照射してアブレーション加工を施すレーザ加工工程と、を具備したことを特徴とする。
【選択図】図4
Description
波長 :355nm(YAGレーザの第3高調波)
平均出力 :0.5W
繰り返し周波数 :200kHz
スポット径 :φ10μm
送り速度 :100mm/秒
T 粘着テープ(ダイシングテープ)
F 環状フレーム
D デバイス
2 レーザ加工装置
28 チャックテーブル
34 レーザビーム照射ユニット
36 集光器
80 粉末含有液状樹脂
82 保護膜
84 レーザ加工溝
Claims (3)
- 被加工物にレーザビームを照射してアブレーション加工を施すアブレーション加工方法であって、
少なくともアブレーション加工すべき被加工物の領域にレーザビームの波長に対して吸収性を有する粉末を混入した液状樹脂を塗布して該粉末入り保護膜を形成する保護膜形成工程と、
該保護膜形成工程を実施した後、該保護膜が形成された被加工物の領域にレーザビームを照射してアブレーション加工を施すレーザ加工工程と、
を具備したことを特徴とするアブレーション加工方法。 - 前記粉末の平均粒径はレーザビームのスポット径より小さいことを特徴とする請求項1記載のアブレーション加工方法。
- 前記レーザビームの波長は355nm以下であり、前記粉末は、Fe2O3、ZnO、TiO2、CeO2、CuO及びCu2Oからなる群から選択された金属酸化物を含み、前記液状樹脂はポリビニルアルコールを含むことを特徴とする請求項1又は2の何れかに記載のアブレーション加工方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011221705A JP5839390B2 (ja) | 2011-10-06 | 2011-10-06 | アブレーション加工方法 |
TW101131336A TWI601590B (zh) | 2011-10-06 | 2012-08-29 | Ablation processing methods |
KR1020120105726A KR20130037639A (ko) | 2011-10-06 | 2012-09-24 | 애블레이션 가공 방법 |
SG2012071221A SG189619A1 (en) | 2011-10-06 | 2012-09-25 | Ablation method |
CN201210369304.6A CN103035570B (zh) | 2011-10-06 | 2012-09-27 | 烧蚀加工方法 |
US13/644,020 US20130087947A1 (en) | 2011-10-06 | 2012-10-03 | Ablation method |
DE102012218210A DE102012218210A1 (de) | 2011-10-06 | 2012-10-05 | Ablationsverfahren |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011221705A JP5839390B2 (ja) | 2011-10-06 | 2011-10-06 | アブレーション加工方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015222654A Division JP2016027678A (ja) | 2015-11-13 | 2015-11-13 | アブレーション加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013081946A true JP2013081946A (ja) | 2013-05-09 |
JP5839390B2 JP5839390B2 (ja) | 2016-01-06 |
Family
ID=47909086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011221705A Active JP5839390B2 (ja) | 2011-10-06 | 2011-10-06 | アブレーション加工方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20130087947A1 (ja) |
JP (1) | JP5839390B2 (ja) |
KR (1) | KR20130037639A (ja) |
CN (1) | CN103035570B (ja) |
DE (1) | DE102012218210A1 (ja) |
SG (1) | SG189619A1 (ja) |
TW (1) | TWI601590B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015131320A (ja) * | 2014-01-14 | 2015-07-23 | 株式会社ディスコ | レーザー加工方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016001677A (ja) * | 2014-06-12 | 2016-01-07 | 株式会社ディスコ | ウエーハの加工方法 |
JP2016115800A (ja) | 2014-12-15 | 2016-06-23 | 株式会社ディスコ | ウエーハの加工方法 |
JP6399923B2 (ja) * | 2014-12-24 | 2018-10-03 | 株式会社ディスコ | 板状物のレーザー加工方法 |
JP2017005158A (ja) | 2015-06-12 | 2017-01-05 | 株式会社ディスコ | ウエーハの裏面研削方法 |
JP6837709B2 (ja) * | 2016-10-14 | 2021-03-03 | 株式会社ディスコ | デバイスウェーハのレーザ加工方法 |
TWI729017B (zh) * | 2016-10-25 | 2021-06-01 | 日商迪思科股份有限公司 | 保護膜形成用樹脂劑及雷射加工方法 |
KR102541722B1 (ko) * | 2016-11-18 | 2023-06-08 | 가부시기가이샤 디스코 | 보호막 형성용 수지제 및 레이저 가공 방법 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020170894A1 (en) * | 2001-05-15 | 2002-11-21 | Eisele Pete John | Removal of debris from laser ablated nozzle plates |
JP2005150523A (ja) * | 2003-11-18 | 2005-06-09 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2005353935A (ja) * | 2004-06-14 | 2005-12-22 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2008130818A (ja) * | 2006-11-21 | 2008-06-05 | Disco Abrasive Syst Ltd | レーザー加工装置 |
JP2009279905A (ja) * | 2008-05-26 | 2009-12-03 | Nippon Kararingu Kk | レーザーマーキング多層シート |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH10305420A (ja) | 1997-03-04 | 1998-11-17 | Ngk Insulators Ltd | 酸化物単結晶からなる母材の加工方法、機能性デバイスの製造方法 |
NL1022081C2 (nl) * | 2002-12-04 | 2004-06-07 | Dsm Nv | Laserlicht absorberend additief. |
JP2004188475A (ja) | 2002-12-13 | 2004-07-08 | Disco Abrasive Syst Ltd | レーザー加工方法 |
US8114572B2 (en) * | 2009-10-20 | 2012-02-14 | Eastman Kodak Company | Laser-ablatable elements and methods of use |
JP2013000818A (ja) * | 2011-06-14 | 2013-01-07 | Total Electric Management Service | ラチェット式スパナ |
JP5839923B2 (ja) * | 2011-10-06 | 2016-01-06 | 株式会社ディスコ | パシベーション膜が積層された基板のアブレーション加工方法 |
JP5888927B2 (ja) * | 2011-10-06 | 2016-03-22 | 株式会社ディスコ | ダイアタッチフィルムのアブレーション加工方法 |
JP2014124646A (ja) * | 2012-12-25 | 2014-07-07 | Disco Abrasive Syst Ltd | レーザ加工方法および微粒子層形成剤 |
JP6178077B2 (ja) * | 2013-01-23 | 2017-08-09 | 株式会社ディスコ | ウエーハの加工方法 |
-
2011
- 2011-10-06 JP JP2011221705A patent/JP5839390B2/ja active Active
-
2012
- 2012-08-29 TW TW101131336A patent/TWI601590B/zh active
- 2012-09-24 KR KR1020120105726A patent/KR20130037639A/ko not_active Application Discontinuation
- 2012-09-25 SG SG2012071221A patent/SG189619A1/en unknown
- 2012-09-27 CN CN201210369304.6A patent/CN103035570B/zh active Active
- 2012-10-03 US US13/644,020 patent/US20130087947A1/en not_active Abandoned
- 2012-10-05 DE DE102012218210A patent/DE102012218210A1/de not_active Withdrawn
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020170894A1 (en) * | 2001-05-15 | 2002-11-21 | Eisele Pete John | Removal of debris from laser ablated nozzle plates |
JP2005150523A (ja) * | 2003-11-18 | 2005-06-09 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2005353935A (ja) * | 2004-06-14 | 2005-12-22 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2008130818A (ja) * | 2006-11-21 | 2008-06-05 | Disco Abrasive Syst Ltd | レーザー加工装置 |
JP2009279905A (ja) * | 2008-05-26 | 2009-12-03 | Nippon Kararingu Kk | レーザーマーキング多層シート |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015131320A (ja) * | 2014-01-14 | 2015-07-23 | 株式会社ディスコ | レーザー加工方法 |
Also Published As
Publication number | Publication date |
---|---|
CN103035570A (zh) | 2013-04-10 |
TWI601590B (zh) | 2017-10-11 |
DE102012218210A1 (de) | 2013-04-11 |
JP5839390B2 (ja) | 2016-01-06 |
CN103035570B (zh) | 2017-09-29 |
KR20130037639A (ko) | 2013-04-16 |
US20130087947A1 (en) | 2013-04-11 |
SG189619A1 (en) | 2013-05-31 |
TW201318748A (zh) | 2013-05-16 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |