JP2013080923A - 向上した熱散逸能力を有する3d集積電子デバイス構造 - Google Patents
向上した熱散逸能力を有する3d集積電子デバイス構造 Download PDFInfo
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Abstract
【解決手段】構造は、基板110にフリップチップ接合される三次元(3D)集積チップアセンブリ105を含む。チップアセンブリは、その上に配置される能動素子144を含むデバイス基板132を含む。キャップ層114は、デバイス基板132に物理的に接合され、能動素子144の周囲の気密シール148を少なくとも部分的に画定する。マイクロ電子デバイス構造は、それを通る複数の熱散逸経路を提供し、その中で生成される熱を散逸させる。
【選択図】図1
Description
105 3D集積チップアセンブリ
110 基板
111 110の第1の主面
112 110の第2の主面
114 キャップ層
115 マイクロバンプ接続部
116 複数の入出力接点
118 はんだバンプ
120 複数の第1の入出力接点
121 アンダーフィル材料
122 114の第1の主面
124 114の第2の主面
125 金属相互接続部
126 複数の第2の入出力接点
128 複数のウェハ貫通ビア
130 複数のシリコン貫通電極(TSV)
132 デバイス基板
134 熱伝導材料
136 ヒートスプレッダ
138 複数の入出力接点
140 132の第1の主面
141 熱伝導層
142 はんだバンプ
143 熱伝導性配線
144 能動素子
146 ガラスフリット
148 気密シール
150 132の第2の主面
152 ヒートスプレッダ
154 熱伝導材料
156 熱散逸経路
200 第2の実施形態
300 第3の実施形態
Claims (10)
- 三次元(3D)集積チップアセンブリ(105)であって、
デバイス基板(132)、
前記デバイス基板(132)上に配置される1つまたは複数の熱生成要素を備える能動素子(144)、
前記デバイス基板(132)に物理的に接合されるキャップ層(114)、および
前記能動素子(144)の周囲に形成される気密シール(148)であって、少なくとも部分的に、前記デバイス基板(132)および前記キャップ層(114)によって画定される、気密シール
を備える、チップアセンブリと、
基板(110)とを備え、前記三次元(3D)集積チップアセンブリ(105)は、前記基板(110)にフリップチップ接合され、
複数の熱散逸経路(156)が、その中で生成される熱を散逸させるために前記三次元(3D)集積チップアセンブリ(105)を通じて延在する、装置(100、200、300)。 - 前記装置(100、300)からの熱の散逸を容易にするために、熱伝導材料(TIM)(154)を介して前記三次元(3D)集積チップアセンブリ(105)に近接して位置付けられるヒートスプレッダ(152)をさらに備える、請求項1記載の装置(100、300)。
- 前記キャップ層(114)は、その中に形成される複数のウェハ貫通ビア(130)と、その第1の主面(122)の上に配置される複数の第1の入出力接点(120)と、その第2の主面(124)の上に配置される複数の第2の入出力接点(126)とをさらに備え、前記複数の第2の入出力接点(126)は、前記複数のウェハ貫通ビア(130)を通じて前記複数の第1の入出力接点(120)に電気的に接続されている、請求項1記載の装置(100、300)。
- 前記デバイス基板(132)は、その中に形成される複数のウェハ貫通ビア(130)と、その第1の主面(140)の上に配置される複数の第1の入出力接点(120)とをさらに備え、前記複数の第1の入出力接点(120)は、前記複数のウェハ貫通ビア(130)を通じて前記能動素子(144)に電気的に接続されている、請求項1記載の装置(200)。
- 前記能動素子(144)の周囲に形成される前記気密シール(148)は、前記デバイス基板(132)と、前記キャップ層(114)と、前記キャップ層(114)および前記デバイス基板(132)を相互接続する前記複数の電気的相互接続(126、138、143)とによって画定される、請求項1記載の装置。
- 前記能動素子(144)の周囲に配置されるシールリング(146)をさらに備え、前記能動素子(144)の周囲に形成される前記気密シール(148)は、前記デバイス基板(132)と、前記キャップ層(114)と、前記シールリング(146)とによって画定される、請求項1記載の装置。
- キャップ層(114)、および、少なくとも部分的に前記キャップ層(114)によって画定される気密シール(148)を含むMEMSデバイス(105)と、
基板(110)とを備え、
前記MEMSデバイス(105)は、前記基板(110)にフリップチップ接合されるように構成される、装置。 - 前記キャップ層(114)は、その中に形成される複数のウェハ貫通ビア(130)と、その第1の主面(122)の上に配置される複数の第1の入出力接点(120)と、その第2の主面(124)の上に配置される複数の第2の入出力接点(126)とをさらに備え、前記複数の第2の入出力接点(124)は、前記複数のウェハ貫通ビア(130)を通じて前記複数の第1の入出力接点(120)に電気的に接続されており、
前記キャップ層(114)の前記第1の主面(122)の上に配置される前記複数の第1の入出力接点(120)は、前記キャップ層(114)が取り付けられることになる前記基板(110)の複数の入出力パッド(116)への結合を容易にし、
前記キャップ層(114)の前記第2の主面(124)の上に配置される前記複数の第2の入出力接点(126)は、同じく前記キャップ層(114)が取り付けられることになる前記デバイス基板(132)の複数の入出力接点(138)への結合を容易にする、請求項7記載の装置。 - 前記デバイス基板(132)は、その中に形成される複数のウェハ貫通ビア(130)と、その第1の主面(140)の上に配置される複数の第1の入出力接点(120)とをさらに備え、前記複数の第1の入出力接点(120)は前記複数のウェハ貫通ビア(130)および複数の熱伝導性配線(143)を通じて前記能動素子(144)に電気的に接続され、前記デバイス基板(132)の前記第1の主面(140)の上に配置される前記複数の第1の入出力接点(120)は、前記デバイス基板(132)が取り付けられることになる前記基板(110)の複数の入出力パッド(116)への結合を容易にする、請求項7記載の装置(200)。
- 方法であって、
三次元(3D)集積チップアセンブリ(105)を提供することであって、前記チップアセンブリを提供する方法は、
第1の主面(140)および第2の主面(150)を有するデバイス基板(132)を提供することであって、前記デバイス基板(132)は、前記第1の主面(140)および前記第2の主面(150)のうちの少なくとも一方の上に複数の入出力接続部(138、143)を含む、提供すること、
前記デバイス基板(132)上に1つまたは複数の集積回路を備える能動素子(144)を配置すること、
キャップ層(114)を前記デバイス基板(132)に接合することであって、前記キャップ層(114)は、第1の主面(122)および第2の主面(124)を有する、接合すること、
前記能動素子(144)の周囲に気密シール(158)を形成することであって、前記気密シール(158)は少なくとも部分的に、前記デバイス基板(132)および前記キャップ層(114)によって画定される、形成すること、ならびに
複数の入出力接続部(116)を含む基板(110)を提供すること
を含む、三次元(3D)集積チップアセンブリを提供することと、
装置(100、200、300)を形成するために前記三次元(3D)集積チップアセンブリ(105)を前記基板(110)にフリップチップ接合することとを含み、
前記装置(100、200、300)は、前記装置(100、200、300)内で生成される熱を散逸させるための、前記三次元(3D)集積チップアセンブリ(105)を通る複数の熱散逸経路(156)を提供する、方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/249,492 | 2011-09-30 | ||
US13/249,492 US8698258B2 (en) | 2011-09-30 | 2011-09-30 | 3D integrated electronic device structure including increased thermal dissipation capabilities |
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JP2013080923A true JP2013080923A (ja) | 2013-05-02 |
JP2013080923A5 JP2013080923A5 (ja) | 2015-11-05 |
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Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BR9402301A (pt) | 1994-07-22 | 1996-04-30 | Rheem Ind Comerc Sa | Corpo de lata com sistema de proteçao anti-corte e processo de abtençao de um corpo de lata com sistema de proteçao anti-corte |
US9006889B2 (en) * | 2011-11-11 | 2015-04-14 | Skyworks Solutions, Inc. | Flip chip packages with improved thermal performance |
JP6150249B2 (ja) * | 2013-02-25 | 2017-06-21 | 京セラ株式会社 | 電子デバイスのガラス封止方法 |
US9123686B2 (en) * | 2013-04-12 | 2015-09-01 | Western Digital Technologies, Inc. | Thermal management for solid-state drive |
WO2014209294A1 (en) * | 2013-06-26 | 2014-12-31 | Empire Technology Development Llc | Micro-contact lithography systems forming optical modulators |
KR102066015B1 (ko) | 2013-08-13 | 2020-01-14 | 삼성전자주식회사 | 반도체 패키지 및 이의 제조방법 |
US9480185B2 (en) | 2014-01-08 | 2016-10-25 | Enphase Energy, Inc. | Double insulated heat spreader |
US9611137B2 (en) * | 2014-08-26 | 2017-04-04 | Invensense, Inc. | MEMS sensor integrated with a flip chip |
JP6019367B2 (ja) * | 2015-01-13 | 2016-11-02 | 株式会社野田スクリーン | 半導体装置 |
US10107662B2 (en) | 2015-01-30 | 2018-10-23 | Honeywell International Inc. | Sensor assembly |
JP6341190B2 (ja) * | 2015-02-16 | 2018-06-13 | 株式会社デンソー | 半導体装置の製造方法 |
CN105990271B (zh) | 2015-02-26 | 2020-06-05 | 恩智浦美国有限公司 | 具有非水平管芯垫及相应引线框的ic封装 |
US9851398B2 (en) | 2015-03-30 | 2017-12-26 | Globalfoundries Inc. | Via leakage and breakdown testing |
US9548255B1 (en) | 2015-08-17 | 2017-01-17 | Freescale Semiconductor, Inc. | IC package having non-horizontal die pad and flexible substrate therefor |
US10629468B2 (en) | 2016-02-11 | 2020-04-21 | Skyworks Solutions, Inc. | Device packaging using a recyclable carrier substrate |
US20170243739A1 (en) * | 2016-02-24 | 2017-08-24 | Skyworks Solutions, Inc. | 3d micromold and pattern transfer |
US10453763B2 (en) | 2016-08-10 | 2019-10-22 | Skyworks Solutions, Inc. | Packaging structures with improved adhesion and strength |
DE102017012256B3 (de) * | 2017-03-22 | 2021-05-20 | Infineon Technologies Ag | Vorrichtung mit Hohlraumstruktur und Verfahren zum Herstellen selbiger |
DE102017204817B4 (de) | 2017-03-22 | 2019-03-21 | Infineon Technologies Ag | Vorrichtung mit Hohlraumstruktur und Verfahren zum Herstellen selbiger |
CN113044802A (zh) * | 2021-04-13 | 2021-06-29 | 北京航空航天大学 | Mems器件真空封装结构及其制造工艺 |
CN116675175B (zh) * | 2023-08-04 | 2023-12-08 | 青岛泰睿思微电子有限公司 | 一种多功能影像光感封装结构 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5040941Y1 (ja) * | 1970-06-08 | 1975-11-21 | ||
JPH09148499A (ja) * | 1995-11-29 | 1997-06-06 | Miyazaki Oki Electric Co Ltd | 半導体気密封止型パッケージ及びその製造方法 |
JP2004209585A (ja) * | 2002-12-27 | 2004-07-29 | Shinko Electric Ind Co Ltd | 電子デバイス及びその製造方法 |
JP2005019966A (ja) * | 2003-06-06 | 2005-01-20 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
JP2005072419A (ja) * | 2003-08-27 | 2005-03-17 | Kyocera Corp | 電子部品封止用基板およびそれを用いた電子装置の製造方法 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3846094B2 (ja) * | 1998-03-17 | 2006-11-15 | 株式会社デンソー | 半導体装置の製造方法 |
JP2001053178A (ja) * | 1999-06-02 | 2001-02-23 | Japan Radio Co Ltd | 電子回路装置が封止され回路基板に実装される電子部品及びその製造方法 |
DE69908194T2 (de) * | 1999-12-17 | 2004-02-05 | Osram Opto Semiconductors Gmbh | Kapselung für organische leds |
US6384353B1 (en) * | 2000-02-01 | 2002-05-07 | Motorola, Inc. | Micro-electromechanical system device |
US6441481B1 (en) * | 2000-04-10 | 2002-08-27 | Analog Devices, Inc. | Hermetically sealed microstructure package |
US6512300B2 (en) * | 2001-01-10 | 2003-01-28 | Raytheon Company | Water level interconnection |
US6624921B1 (en) * | 2001-03-12 | 2003-09-23 | Amkor Technology, Inc. | Micromirror device package fabrication method |
KR100387239B1 (ko) * | 2001-04-26 | 2003-06-12 | 삼성전자주식회사 | Mems 릴레이 및 그 제조방법 |
WO2002096166A1 (en) | 2001-05-18 | 2002-11-28 | Corporation For National Research Initiatives | Radio frequency microelectromechanical systems (mems) devices on low-temperature co-fired ceramic (ltcc) substrates |
US6559530B2 (en) * | 2001-09-19 | 2003-05-06 | Raytheon Company | Method of integrating MEMS device with low-resistivity silicon substrates |
US6673697B2 (en) * | 2002-04-03 | 2004-01-06 | Intel Corporation | Packaging microelectromechanical structures |
US6696645B2 (en) * | 2002-05-08 | 2004-02-24 | The Regents Of The University Of Michigan | On-wafer packaging for RF-MEMS |
SG111972A1 (en) * | 2002-10-17 | 2005-06-29 | Agency Science Tech & Res | Wafer-level package for micro-electro-mechanical systems |
US7170155B2 (en) * | 2003-06-25 | 2007-01-30 | Intel Corporation | MEMS RF switch module including a vertical via |
US7030642B2 (en) * | 2004-02-06 | 2006-04-18 | Honeywell International Inc. | Quick attachment fixture and power card for diode-based light devices |
US7312505B2 (en) * | 2004-03-31 | 2007-12-25 | Intel Corporation | Semiconductor substrate with interconnections and embedded circuit elements |
US7262509B2 (en) * | 2004-05-11 | 2007-08-28 | Intel Corporation | Microelectronic assembly having a perimeter around a MEMS device |
US7204737B2 (en) * | 2004-09-23 | 2007-04-17 | Temic Automotive Of North America, Inc. | Hermetically sealed microdevice with getter shield |
US7791183B1 (en) * | 2005-04-11 | 2010-09-07 | The United States Of America As Represented By The Secretary Of The Air Force | Universal low cost MEM package |
US7897503B2 (en) | 2005-05-12 | 2011-03-01 | The Board Of Trustees Of The University Of Arkansas | Infinitely stackable interconnect device and method |
US7491567B2 (en) * | 2005-11-22 | 2009-02-17 | Honeywell International Inc. | MEMS device packaging methods |
US20070114643A1 (en) * | 2005-11-22 | 2007-05-24 | Honeywell International Inc. | Mems flip-chip packaging |
US7936062B2 (en) * | 2006-01-23 | 2011-05-03 | Tessera Technologies Ireland Limited | Wafer level chip packaging |
WO2008079887A2 (en) * | 2006-12-21 | 2008-07-03 | Analog Devices, Inc. | Stacked mems device |
CN101675498B (zh) * | 2007-03-02 | 2011-09-28 | 明锐有限公司 | 用于微镜器件的倒装芯片封装的方法和*** |
US8604603B2 (en) | 2009-02-20 | 2013-12-10 | The Hong Kong University Of Science And Technology | Apparatus having thermal-enhanced and cost-effective 3D IC integration structure with through silicon via interposers |
CN101959106A (zh) * | 2009-07-16 | 2011-01-26 | 鸿富锦精密工业(深圳)有限公司 | 微机电***麦克风的封装结构及其封装方法 |
-
2011
- 2011-09-30 US US13/249,492 patent/US8698258B2/en active Active
-
2012
- 2012-09-21 EP EP12185346.9A patent/EP2575164A3/en not_active Ceased
- 2012-09-25 JP JP2012210260A patent/JP6416454B2/ja active Active
- 2012-10-08 CN CN201210376998.6A patent/CN103030093B/zh active Active
-
2014
- 2014-02-21 US US14/186,362 patent/US8802475B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5040941Y1 (ja) * | 1970-06-08 | 1975-11-21 | ||
JPH09148499A (ja) * | 1995-11-29 | 1997-06-06 | Miyazaki Oki Electric Co Ltd | 半導体気密封止型パッケージ及びその製造方法 |
JP2004209585A (ja) * | 2002-12-27 | 2004-07-29 | Shinko Electric Ind Co Ltd | 電子デバイス及びその製造方法 |
JP2005019966A (ja) * | 2003-06-06 | 2005-01-20 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
JP2005072419A (ja) * | 2003-08-27 | 2005-03-17 | Kyocera Corp | 電子部品封止用基板およびそれを用いた電子装置の製造方法 |
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JP6416454B2 (ja) | 2018-10-31 |
US20130082376A1 (en) | 2013-04-04 |
US8698258B2 (en) | 2014-04-15 |
EP2575164A2 (en) | 2013-04-03 |
CN103030093B (zh) | 2018-02-02 |
EP2575164A3 (en) | 2016-01-13 |
US20140170811A1 (en) | 2014-06-19 |
CN103030093A (zh) | 2013-04-10 |
US8802475B2 (en) | 2014-08-12 |
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