JP2012526492A - Vco周波数チューニングのための、オーバーラップする2セグメントキャパシタバンク - Google Patents
Vco周波数チューニングのための、オーバーラップする2セグメントキャパシタバンク Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
- H03B5/1246—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising transistors used to provide a variable capacitance
- H03B5/1253—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising transistors used to provide a variable capacitance the transistors being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/1262—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements
- H03B5/1265—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements switched capacitors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/1293—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator having means for achieving a desired tuning characteristic, e.g. linearising the frequency characteristic across the tuning voltage range
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
- Channel Selection Circuits, Automatic Tuning Circuits (AREA)
- Filters And Equalizers (AREA)
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
Abstract
【選択図】図5
Description
Claims (20)
- 第1発振ノードと、
第2発振ノードと、
第1の複数の第1同調キャパシタエレメント(tuning capacitor elements)であって、第1状態において各第1同調キャパシタエレメントが前記第1及び前記第2発振ノード間に第1キャパシタンスを供給し、第2状態において各第1同調キャパシタエレメントが前記第1及び前記第2発振ノード間に実質的にキャパシタンスを供給しない、前記第1の複数の第1同調キャパシタエレメントと、
第2の複数の第2同調キャパシタエレメントであって、第1状態において各第2同調キャパシタエレメントが前記第1及び前記第2発振ノード間に第2キャパシタンスを供給し、第2状態において各第2同調キャパシタエレメントが前記第1及び前記第2発振ノード間に実質的にキャパシタンスを供給せず、前記第2キャパシタンスが前記第1キャパシタンスよりも小さい、前記第2の複数の第2同調キャパシタエレメントと
を備える発振器。 - 前記第1同調キャパシタエレメントの各々は、
第1リード及び第2リードを有し、前記第1リードが前記第1発振ノードに結合された第1キャパシタと、
第1リード及び第2リードを有し、前記第1リードが前記第2発振ノードに結合された第2キャパシタと、
前記第1状態で導通され、前記第1キャパシタの前記第2リードを前記第2キャパシタの前記第2リードに結合し、前記第2状態では実質的に非導通とされるスイッチングエレメントと
を備える請求項1の発振器。 - 前記第1の複数の第1同調キャパシタエレメントは第1のサーモメータ符号化キャパシタバンク(thermometer-coded capacitor bank)であり、前記第2の複数の第2同調キャパシタエレメントは第2のサーモメータ符号化キャパシタバンク(thermometer-coded capacitor bank)である、請求項1の発振器。
- Y個の第2同調キャパシタエレメントが設けられ、Yと前記第2キャパシタンスとの積は、前記第1キャパシタンスよりも大きい、請求項1の発振器。
- 前記発振器は、周波数変調(FM)無線受信機の電圧制御発振器である、請求項1の発振器。
- 前記スイッチングエレメントはデジタルビットにより制御され、
前記スイッチングエレメントは、前記デジタルビットの第1の値で前記第1状態とされ、前記デジタルビットの第2の値で前記第2状態とされる、請求項2の発振器。 - 前記第1の複数の第1同調キャパシタエレメントに結合された、ある量のキャパシタバンク選択ロジックを更に備え、
前記ある量のキャパシタバンク選択ロジックはキャパシタバンクコード(capacitor bank code)を生成し、
前記キャパシタバンクコードは、各第1同調キャパシタエレメントが前記第1状態であるか否か、及び各第1同調キャパシタエレメントが前記第2状態であるか否か、を決定する、請求項1の発振器。 - 第1キャパシタバンクコードに応じて第1同調キャパシタエレメント(tuning capacitor element)の状態をスイッチングすることと、
第2キャパシタバンクコードに応じて第2同調キャパシタエレメントの状態をスイッチングすることと
を備え、前記第1同調キャパシタエレメントは第1の複数の第1同調キャパシタエレメントの1つであり、第1状態において各第1同調キャパシタエレメントが発振器の第1及び第2発振ノード間に第1キャパシタンスを供給し、第2状態において各第1同調キャパシタエレメントが前記第1及び前記第2発振ノード間に実質的にキャパシタンスを供給せず、
前記第2同調キャパシタエレメントは第2の複数の第2同調キャパシタエレメントの1つであり、第1状態において各第2同調キャパシタエレメントが前記第1及び前記第2発振ノード間に第2キャパシタンスを供給し、第2状態において各第2同調キャパシタエレメントが前記第1及び前記第2発振ノード間に実質的にキャパシタンスを供給しない、方法。 - 前記第2の複数の第2同調キャパシタエレメントの各々が前記第1状態の際、前記第1キャパシタンスは、前記第2の複数の第2同調キャパシタエレメントの各々のキャパシタンスの和よりも小さい、請求項8の方法。
- 前記発振器の発振周波数とターゲット発振周波数との差に応じて、前記第1キャパシタバンクコード及び前記第2キャパシタバンクコードを生成すること
を更に備える請求項8の方法。 - いずれかのビットが前記第1同調キャパシタエレメントの前記状態を決定する第1の複数のデジタルビットを生成するために第1キャパシタバンクコードをデコードすることと、
いずれかのビットが前記第2同調キャパシタエレメントの前記状態を決定する第2の複数のデジタルビットを生成するために第2キャパシタバンクコードをデコードすることと
を更に備える請求項8の方法。 - 前記第1の複数の第1同調キャパシタエレメントの各々の前記キャパシタンス、及び前記第2の複数の第2同調キャパシタエレメントの各々の前記キャパシタンスは、電圧制御発振器(VCO)の発振周波数を決定する、請求項8の方法。
- 前記VCOの前記発振周波数は、2.736ギガヘルツから3.127ギガヘルツまで変動する、請求項12の方法。
- コンピュータに対して、第1キャパシタバンクコードに応じて第1サーモメータ符号化キャパシタバンク(thermometer-coded capacitor bank)のキャパシタンスを制御させるためのコードと、
前記コンピュータに対して、第2キャパシタバンクコードに応じて第2サーモメータ符号化キャパシタバンクのキャパシタンスを制御させるためのコードと
を備えるコンピュータ読み取り可能な媒体を備え、前記第1サーモメータ符号化キャパシタバンクの前記キャパシタンスと前記第2サーモメータ符号化キャパシタバンクの前記キャパシタンスは、電圧制御発振器(VCO)の発振周波数を制御する、コンピュータプログラム製品。 - 前記コンピュータ読み取り可能な媒体は、
前記コンピュータに対して、前記VCOの前記発振周波数を備える前記VCOの出力信号を受信させるためのコードと、
前記コンピュータに対して、チャネル選択信号を受信させるためのコードと、
前記コンピュータに対して、前記発振周波数と、前記チャネル選択信号に関連付けられたターゲット発振周波数との間の差の表示(indication)を生成させるためのコードと、
前記コンピュータに対して、前記表示に応じて第1キャパシタバンクコードと第2キャパシタバンクコードとを備えるデジタルワードを生成させるためのコードと
を更に備える請求項14のコンピュータプログラム製品。 - 前記第1キャパシタバンクコードは、前記第1サーモメータ符号化キャパシタバンクの第1の複数の第1同調キャパシタエレメント(tuning capacitor elements)をアドレス(address)し、前記第2キャパシタバンクコードは、前記第2サーモメータ符号化キャパシタバンクの第2の複数の第2同調キャパシタエレメントをアドレスし、
前記第1同調キャパシタエレメントの各々は、アクティブ状態において第1キャパシタンス値を供給し、前記第2同調キャパシタエレメントの各々は、アクティブ状態において第2キャパシタンス値を供給する、請求項14のコンピュータプログラム製品。 - 前記第2サーモメータ符号化キャパシタバンクの前記第2同調キャパシタエレメントの各々がアクティブの際、前記第2サーモメータ符号化キャパシタバンクの前記キャパシタンス値は、前記第1キャパシタンス値よりも大きい、請求項16のコンピュータプログラム製品。
- 第1発振ノードと、
第2発振ノードと、
第1の複数の第1同調キャパシタエレメント(tuning capacitor elements)であって、第1状態において各第1同調キャパシタエレメントが前記第1及び前記第2発振ノード間に第1キャパシタンスを供給し、第2状態において各第1同調キャパシタエレメントが前記第1及び前記第2発振ノード間に実質的にキャパシタンスを供給しない、前記第1の複数の第1同調キャパシタエレメントと、
第2の複数の第2同調キャパシタエレメントであって、第1状態において各第2同調キャパシタエレメントが前記第1及び前記第2発振ノード間に第2キャパシタンスを供給し、第2状態において各第2同調キャパシタエレメントが前記第1及び前記第2発振ノード間に実質的にキャパシタンスを供給しない、前記第2の複数の第2同調キャパシタエレメントと、
各第1同調キャパシタエレメントの前記第1状態と前記第2状態との間をスイッチングし、各第2同調キャパシタエレメントの前記第1状態と前記第2状態との間をスイッチングする手段と
を備える発振器。 - Y個の第2同調キャパシタエレメントが設けられ、Yと前記第2キャパシタンスとの積は、前記第1キャパシタンスよりも大きい、請求項18の発振器。
- 前記スイッチングする手段は、デジタルワードを変えることを備える、請求項18の装置。
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US12/437,462 US8169270B2 (en) | 2009-05-07 | 2009-05-07 | Overlapping, two-segment capacitor bank for VCO frequency tuning |
US12/437,462 | 2009-05-07 | ||
PCT/US2010/034129 WO2010129925A2 (en) | 2009-05-07 | 2010-05-07 | Overlapping, two-segment capacitor bank for vco frequency tuning |
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JP2014147102A Pending JP2014239476A (ja) | 2009-05-07 | 2014-07-17 | Vco周波数チューニングのための、オーバーラップする2セグメントキャパシタバンク |
JP2016005448A Active JP6258363B2 (ja) | 2009-05-07 | 2016-01-14 | Vco周波数チューニングのための、オーバーラップする2セグメントキャパシタバンク |
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US8169270B2 (en) | 2012-05-01 |
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JP2016106481A (ja) | 2016-06-16 |
CN102422526B (zh) | 2015-10-21 |
EP2506424A2 (en) | 2012-10-03 |
KR20120023069A (ko) | 2012-03-12 |
TW201108619A (en) | 2011-03-01 |
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