JP2012522132A - 有機蒸気ジェット印刷用のノズルの幾何学的形状 - Google Patents
有機蒸気ジェット印刷用のノズルの幾何学的形状 Download PDFInfo
- Publication number
- JP2012522132A JP2012522132A JP2012502207A JP2012502207A JP2012522132A JP 2012522132 A JP2012522132 A JP 2012522132A JP 2012502207 A JP2012502207 A JP 2012502207A JP 2012502207 A JP2012502207 A JP 2012502207A JP 2012522132 A JP2012522132 A JP 2012522132A
- Authority
- JP
- Japan
- Prior art keywords
- nozzle
- aperture
- minimum dimension
- gas source
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007639 printing Methods 0.000 title description 14
- 239000011368 organic material Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 30
- 238000000859 sublimation Methods 0.000 claims description 27
- 230000008022 sublimation Effects 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 230000004888 barrier function Effects 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 119
- 239000000758 substrate Substances 0.000 description 67
- 235000012431 wafers Nutrition 0.000 description 66
- 239000012530 fluid Substances 0.000 description 32
- 238000000151 deposition Methods 0.000 description 29
- 230000008021 deposition Effects 0.000 description 25
- 239000000463 material Substances 0.000 description 23
- 238000004891 communication Methods 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 239000012159 carrier gas Substances 0.000 description 17
- 238000010438 heat treatment Methods 0.000 description 15
- 238000005530 etching Methods 0.000 description 14
- 239000011521 glass Substances 0.000 description 14
- 238000006073 displacement reaction Methods 0.000 description 11
- 238000001878 scanning electron micrograph Methods 0.000 description 10
- 238000012546 transfer Methods 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- 239000000835 fiber Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 239000012212 insulator Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 229910000833 kovar Inorganic materials 0.000 description 6
- 239000005388 borosilicate glass Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 238000000708 deep reactive-ion etching Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000005496 eutectics Effects 0.000 description 5
- 230000004927 fusion Effects 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 238000000879 optical micrograph Methods 0.000 description 5
- 230000035882 stress Effects 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 238000003491 array Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 238000001912 gas jet deposition Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 230000005457 Black-body radiation Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000000089 atomic force micrograph Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 239000002775 capsule Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 210000000613 ear canal Anatomy 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012188 paraffin wax Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000001993 wax Substances 0.000 description 2
- 241000252506 Characiformes Species 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 238000000342 Monte Carlo simulation Methods 0.000 description 1
- 229920006169 Perfluoroelastomer Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 210000002388 eustachian tube Anatomy 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 238000013086 organic photovoltaic Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000700 radioactive tracer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 230000010512 thermal transition Effects 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
310 プリントヘッド
320 有機蒸気源
330 マニホールド
340 ベローズ
410 第一の層
415 ノズル
420 第二の層
422 ビア
440 オーム(加熱)コンタクト
Claims (21)
- 第一のガス源に気密的に密閉された第一のノズルを備えたプリントヘッドを備えた第一のデバイスであって、
前記第一のノズルが、前記第一のノズルの流れ方向に垂直な方向において0.5から500マイクロメートルの最小寸法を有するアパーチャを有し、
前記第一のノズルのアパーチャの最小寸法の5倍である該アパーチャから前記第一のノズル内への距離における流れ方向に垂直な最小寸法が、前記第一のノズルのアパーチャの最小寸法の少なくとも二倍である、第一のデバイス。 - 前記プリントヘッドが、前記第一のガス源に気密的に密閉された複数の第一のノズルを備える、請求項1に記載の第一のデバイス。
- 前記プリントヘッドが、前記第一のガス源とは異なる第二のガス源に気密的に密閉された第二のノズルを更に備え、
前記第二のノズルが、前記第二のノズルの流れ方向に垂直な方向において0.5から500マイクロメートルの最小寸法を有するアパーチャを有し、
前記第二のノズルのアパーチャの最小寸法の5倍である該アパーチャから前記第二のノズル内への距離における流れ方向に垂直な最小寸法が、前記第二のノズルのアパーチャの最小寸法の少なくとも二倍である、請求項1に記載の第一のデバイス。 - 前記プリントヘッドが、前記第一のガス源及び前記第二のガス源とは異なる第三のガス源に気密的に密閉された第三のノズルを更に備え、
前記第三のノズルが、前記第三のノズルの流れ方向に垂直な方向において0.5から500マイクロメートルの最小寸法を有するアパーチャを有し、
前記第三のノズルのアパーチャの最小寸法の5倍である該アパーチャから前記第三のノズル内への距離における流れ方向に垂直な最小寸法が、前記第三のノズルのアパーチャの最小寸法の少なくとも二倍である、請求項3に記載の第一のデバイス。 - 前記プリントヘッドが、前記第一のガス源に気密的に密閉された複数の第一のノズルと、前記第二のガス源に気密的に密閉された複数の第二のノズルと、前記第三のガス源に気密的に密閉された複数の第三のノズルとを備える、請求項4に記載の第一のデバイス。
- 前記第一のノズルが、前記アパーチャから、前記第一のノズルのアパーチャの最小寸法の2倍である該アパーチャから前記第一のノズル内への距離まで一定の断面を有する、請求項1に記載の第一のデバイス。
- 前記第一のノズルの流れ方向に垂直な方向における前記第一のノズルの最小寸法が、ゼロから前記第一のノズルのアパーチャの最小寸法の2倍までの範囲の距離に対して、前記第一のノズルのアパーチャからの距離と共に連続的に増大する、請求項1に記載の第一のデバイス。
- 前記第一のノズルの流れ方向に垂直な方向における前記第一のノズルの最小寸法が、ゼロから前記第一のノズルのアパーチャの最小寸法の2倍までの範囲の距離に対して、前記第一のノズルのアパーチャからの距離と共に線形に増大する、請求項1に記載の第一のデバイス。
- 前記第一のノズルが金属製又はセラミック製である、請求項1に記載の第一のデバイス。
- 前記第一のノズルがシリコン製である、請求項1に記載の第一のデバイス。
- 前記第一のノズルが、前記第一のノズルの流れ方向に垂直な方向において100から500マイクロメートルの最小寸法を有するアパーチャを有する、請求項1に記載の第一のデバイス。
- 前記第一のノズルが、前記第一のノズルの流れ方向に垂直な方向において20から100マイクロメートルの最小寸法を有するアパーチャを有する、請求項1に記載の第一のデバイス。
- 前記第一のノズルが、前記第一のノズルの流れ方向に垂直な方向において0.5から20マイクロメートルの最小寸法を有するアパーチャを有する、請求項1に記載の第一のデバイス。
- 前記第一のノズルの流れ方向に垂直な前記第一のノズルの断面が円形である、請求項1に記載の第一のデバイス。
- 前記第一のノズルの流れ方向に垂直な前記第一のノズルの断面が矩形である、請求項1に記載の第一のデバイス。
- 前記第一及び第二のガス源と、
前記プリントヘッドと前記第一及び第二のガス源との間に配置された熱障壁と、
前記プリントヘッド、前記第一のガス源及び前記第二のガス源の各々用の独立的に制御可能な熱源とを更に備えた請求項3に記載の第一のデバイス。 - 第一の昇華チャンバ及び第二の昇華チャンバを備えた前記第一のガス源と、
前記プリントヘッドと前記第一のガス源との間に配置された熱障壁と、
前記プリントヘッド、前記第一の昇華チャンバ及び前記第二の昇華チャンバの各々用の独立的に制御可能な熱源とを更に備えた請求項1に記載の第一のデバイス。 - 前記アパーチャが前記プリントヘッドからの突出部内に形成されている、請求項1に記載の第一のデバイス。
- 第一のガス源に気密的に密閉された第一のノズルを備えたプリントヘッドを備えた第一のデバイスを提供するステップと、
前記第一のノズルからガスジェットを放出するステップとを備えた方法であって、
前記第一のノズルが、前記第一のノズルの流れ方向に垂直な方向において0.5から500マイクロメートルの最小寸法を有するアパーチャを有し、
前記第一のノズルのアパーチャの最小寸法の5倍である該アパーチャから前記第一のノズル内への距離における流れ方向に垂直な最小寸法が、前記第一のノズルのアパーチャの最小寸法の少なくとも二倍である、方法。 - 前記プリントヘッドが、前記第一のガス源とは異なる第二のガス源に気密的に密閉された第二のノズルを更に備え、
前記第二のノズルが、前記第二のノズルの流れ方向に垂直な方向において0.5から500マイクロメートルの最小寸法を有するアパーチャを有し、
前記第二のノズルのアパーチャの最小寸法の5倍である該ノズルから前記第二のノズル内への距離における流れ方向に垂直な最小寸法が、前記第二のノズルのアパーチャの最小寸法の少なくとも二倍であり、
前記方法が、前記プリントヘッド、前記第一のガス源、及び前記第二のガス源において、独立的に制御可能な異なる温度を維持するステップを更に備える、請求項19に記載の方法。 - 前記第一のガス源によって提供されるガスが、第一の昇華温度を有する第一の有機物質を含み、
前記第二のガス源によって提供されるガスが、前記第一の有機物質の昇華温度とは少なくとも10℃異なる第二の昇華温度を有する第二の有機物質を含む、請求項20に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US21100209P | 2009-03-25 | 2009-03-25 | |
US61/211,002 | 2009-03-25 | ||
US12/729,448 | 2010-03-23 | ||
US12/729,448 US8931431B2 (en) | 2009-03-25 | 2010-03-23 | Nozzle geometry for organic vapor jet printing |
PCT/US2010/028496 WO2010111387A1 (en) | 2009-03-25 | 2010-03-24 | Nozzle geometry for organic vapor jet printing |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012522132A true JP2012522132A (ja) | 2012-09-20 |
JP6033679B2 JP6033679B2 (ja) | 2016-11-30 |
Family
ID=42199211
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012502207A Active JP6033679B2 (ja) | 2009-03-25 | 2010-03-24 | 有機蒸気ジェット印刷用のノズルの幾何学的形状 |
Country Status (7)
Country | Link |
---|---|
US (4) | US8931431B2 (ja) |
EP (1) | EP2411556B1 (ja) |
JP (1) | JP6033679B2 (ja) |
KR (3) | KR20160122862A (ja) |
CN (1) | CN102428205B (ja) |
TW (1) | TWI520854B (ja) |
WO (1) | WO2010111387A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180129690A (ko) * | 2017-05-26 | 2018-12-05 | 유니버셜 디스플레이 코포레이션 | 고해상도 인쇄가 가능한 범용 유기 기상 젯 증착기 및 ovjp 인쇄 방법 |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110159214A1 (en) * | 2008-03-26 | 2011-06-30 | Gt Solar, Incorporated | Gold-coated polysilicon reactor system and method |
MY156940A (en) * | 2008-03-26 | 2016-04-15 | Gt Solar Inc | System and methods for distributing gas in a chemical vapor deposition reactor |
US8931431B2 (en) * | 2009-03-25 | 2015-01-13 | The Regents Of The University Of Michigan | Nozzle geometry for organic vapor jet printing |
EP2425470A2 (en) * | 2009-05-01 | 2012-03-07 | Kateeva, Inc. | Method and apparatus for organic vapor printing |
US8691178B2 (en) | 2010-06-03 | 2014-04-08 | The Regents Of The University Of Michigan | Purification of carbon nanotubes using agarose column and density gradient ultracentrifugation |
US9873939B2 (en) * | 2011-09-19 | 2018-01-23 | The Regents Of The University Of Michigan | Microfluidic device and method using double anodic bonding |
US8728858B2 (en) * | 2012-08-27 | 2014-05-20 | Universal Display Corporation | Multi-nozzle organic vapor jet printing |
CN102963124B (zh) * | 2012-11-29 | 2015-06-03 | 中国科学院苏州纳米技术与纳米仿生研究所 | 气体喷印装置及喷印方法 |
CN103972095B (zh) * | 2013-02-01 | 2017-06-13 | 中国科学院苏州纳米技术与纳米仿生研究所 | 金属氧化物薄膜场效应晶体管的制备方法 |
CN103972392A (zh) * | 2013-02-01 | 2014-08-06 | 中国科学院苏州纳米技术与纳米仿生研究所 | 有机薄膜场效应晶体管的制备方法 |
US10192847B2 (en) * | 2014-06-12 | 2019-01-29 | Asm Technology Singapore Pte Ltd | Rapid cooling system for a bond head heater |
US11220737B2 (en) * | 2014-06-25 | 2022-01-11 | Universal Display Corporation | Systems and methods of modulating flow during vapor jet deposition of organic materials |
US11267012B2 (en) * | 2014-06-25 | 2022-03-08 | Universal Display Corporation | Spatial control of vapor condensation using convection |
EP2960059B1 (en) | 2014-06-25 | 2018-10-24 | Universal Display Corporation | Systems and methods of modulating flow during vapor jet deposition of organic materials |
US10566534B2 (en) | 2015-10-12 | 2020-02-18 | Universal Display Corporation | Apparatus and method to deliver organic material via organic vapor-jet printing (OVJP) |
KR101910834B1 (ko) * | 2017-03-20 | 2018-10-23 | 윤인규 | 이동식 교량 작업용 비계 |
US11588140B2 (en) * | 2018-01-12 | 2023-02-21 | Universal Display Corporation | Organic vapor jet print head for depositing thin film features with high thickness uniformity |
US11033924B2 (en) * | 2018-01-31 | 2021-06-15 | Universal Display Corporation | Organic vapor jet print head with orthogonal delivery and exhaust channels |
US20190386256A1 (en) | 2018-06-18 | 2019-12-19 | Universal Display Corporation | Sequential material sources for thermally challenged OLED materials |
WO2021236105A1 (en) * | 2020-05-22 | 2021-11-25 | Hewlett-Packard Development Company, L.P. | Control of colorants and treatments for printing |
WO2021262138A1 (en) * | 2020-06-22 | 2021-12-30 | Hewlett-Packard Development Company, L.P. | Printhead positions |
US20230363244A1 (en) * | 2022-05-09 | 2023-11-09 | Universal Display Corporation | Organic vapor jet printing system |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63183856A (ja) * | 1986-08-29 | 1988-07-29 | テクトロニックス・インコ−ポレイテッド | インクジェットヘッドの製造方法 |
US4812326A (en) * | 1986-08-22 | 1989-03-14 | Mitsubishi Denki Kabushiki Kaisha | Evaporation source with a shaped nozzle |
JPH06122197A (ja) * | 1992-08-25 | 1994-05-06 | Ngk Insulators Ltd | インクジェットプリントヘッド |
JPH10175316A (ja) * | 1996-10-14 | 1998-06-30 | Sony Corp | プリンタ装置 |
JPH11514499A (ja) * | 1995-10-23 | 1999-12-07 | ワトキンズ−ジョンソン カンパニー | 半導体のイオン注入用ガス噴射システム |
JP2005502779A (ja) * | 2001-09-04 | 2005-01-27 | ザ、トラスティーズ オブ プリンストン ユニバーシティ | 有機蒸気噴流沈着用の方法および装置 |
US20070057387A1 (en) * | 2005-09-13 | 2007-03-15 | Xerox Corporation | Ballistic aerosol marking venturi pipe geometry for printing onto a transfuse substrate |
JP2007520854A (ja) * | 2003-10-23 | 2007-07-26 | ザ、トラスティーズ オブ プリンストン ユニバーシティ | 限定された保護流体を使用することによって有機蒸気ジェット堆積の方位分解能を増加させる方法 |
JP2008517780A (ja) * | 2004-10-21 | 2008-05-29 | フジフィルム ディマティックス,インコーポレイテッド | エッチングのための犠牲基板 |
US20080152806A1 (en) * | 2006-12-22 | 2008-06-26 | Stephen Forrest | Organic vapor jet deposition using an exhaust |
Family Cites Families (83)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3381114A (en) * | 1963-12-28 | 1968-04-30 | Nippon Electric Co | Device for manufacturing epitaxial crystals |
CH495590A (de) * | 1968-06-21 | 1970-08-31 | Precisa Ag | Verfahren zum Drucken von Zeichen und Vorrichtung zur Durchführung des Verfahrens |
US3951100A (en) * | 1972-12-15 | 1976-04-20 | Ppg Industries, Inc. | Chemical vapor deposition of coatings |
US3850679A (en) * | 1972-12-15 | 1974-11-26 | Ppg Industries Inc | Chemical vapor deposition of coatings |
US3888649A (en) * | 1972-12-15 | 1975-06-10 | Ppg Industries Inc | Nozzle for chemical vapor deposition of coatings |
US3942469A (en) * | 1972-12-15 | 1976-03-09 | Ppg Industries, Inc. | Vapor deposition nozzle |
US3958255A (en) * | 1974-12-31 | 1976-05-18 | International Business Machines Corporation | Ink jet nozzle structure |
US4106976A (en) * | 1976-03-08 | 1978-08-15 | International Business Machines Corporation | Ink jet nozzle method of manufacture |
CH643469A5 (fr) * | 1981-12-22 | 1984-06-15 | Siv Soc Italiana Vetro | Installation pour deposer en continu, sur la surface d'un substrat porte a haute temperature, une couche d'une matiere solide. |
AU3994785A (en) * | 1984-02-13 | 1985-08-27 | Schmitt, J.J. 111 | Method and apparatus for the gas jet deposition of conductingand dielectric thin solid films and products produced there by |
CA1272661A (en) * | 1985-05-11 | 1990-08-14 | Yuji Chiba | Reaction apparatus |
US4980204A (en) * | 1987-11-27 | 1990-12-25 | Fujitsu Limited | Metal organic chemical vapor deposition method with controlled gas flow rate |
US4943345A (en) * | 1989-03-23 | 1990-07-24 | Board Of Trustees Operating Michigan State University | Plasma reactor apparatus and method for treating a substrate |
KR920700922A (ko) * | 1989-04-17 | 1992-08-10 | 로저 디킨슨 | 잉크 분사 노즐/밸브. 펜 및 인서기 |
US5069419A (en) * | 1989-06-23 | 1991-12-03 | Ic Sensors Inc. | Semiconductor microactuator |
US5087930A (en) * | 1989-11-01 | 1992-02-11 | Tektronix, Inc. | Drop-on-demand ink jet print head |
US5324386A (en) * | 1991-03-19 | 1994-06-28 | Fujitsu Limited | Method of growing group II-IV mixed compound semiconductor and an apparatus used therefor |
JP3039583B2 (ja) * | 1991-05-30 | 2000-05-08 | 株式会社日立製作所 | バルブ及びそれを用いた半導体製造装置 |
US5874974A (en) * | 1992-04-02 | 1999-02-23 | Hewlett-Packard Company | Reliable high performance drop generator for an inkjet printhead |
US5387314A (en) * | 1993-01-25 | 1995-02-07 | Hewlett-Packard Company | Fabrication of ink fill slots in thermal ink-jet printheads utilizing chemical micromachining |
US5865896A (en) * | 1993-08-27 | 1999-02-02 | Applied Materials, Inc. | High density plasma CVD reactor with combined inductive and capacitive coupling |
US5679167A (en) * | 1994-08-18 | 1997-10-21 | Sulzer Metco Ag | Plasma gun apparatus for forming dense, uniform coatings on large substrates |
US5892524A (en) * | 1995-04-12 | 1999-04-06 | Eastman Kodak Company | Apparatus for printing multiple drop sizes and fabrication thereof |
JP3380091B2 (ja) * | 1995-06-09 | 2003-02-24 | 株式会社荏原製作所 | 反応ガス噴射ヘッド及び薄膜気相成長装置 |
AUPN623895A0 (en) * | 1995-10-30 | 1995-11-23 | Eastman Kodak Company | A manufacturing process for lift print heads with nozzle rim heaters |
JP3491187B2 (ja) * | 1996-02-05 | 2004-01-26 | セイコーエプソン株式会社 | インクジェット式記録装置による記録方法 |
JP3045180B2 (ja) * | 1996-06-04 | 2000-05-29 | シチズン時計株式会社 | インクジェットヘッド及びその製造方法 |
US6013155A (en) * | 1996-06-28 | 2000-01-11 | Lam Research Corporation | Gas injection system for plasma processing |
JP3275202B2 (ja) * | 1996-08-30 | 2002-04-15 | 東京エレクトロン株式会社 | 薄膜形成装置 |
TW415970B (en) * | 1997-01-08 | 2000-12-21 | Ebara Corp | Vapor-phase film growth apparatus and gas ejection head |
US6123414A (en) * | 1997-03-12 | 2000-09-26 | Samsung Electro-Mechanics Co., Ltd. | Apparatus for injecting a recording solution of a print head using phase transformation of thin film shape memory alloy |
US6024799A (en) * | 1997-07-11 | 2000-02-15 | Applied Materials, Inc. | Chemical vapor deposition manifold |
AUPP654398A0 (en) * | 1998-10-16 | 1998-11-05 | Silverbrook Research Pty Ltd | Micromechanical device and method (ij46g) |
US6089692A (en) * | 1997-08-08 | 2000-07-18 | Eastman Kodak Company | Ink jet printing with multiple drops at pixel locations for gray scale |
US6059391A (en) * | 1997-08-19 | 2000-05-09 | Fulkerson; Timothy Jerome | Apparatus and method for ink jet printing on large or irregular fabrics |
US6136725A (en) * | 1998-04-14 | 2000-10-24 | Cvd Systems, Inc. | Method for chemical vapor deposition of a material on a substrate |
EP1073777A2 (en) * | 1998-04-14 | 2001-02-07 | CVD Systems, Inc. | Film deposition system |
US6565661B1 (en) * | 1999-06-04 | 2003-05-20 | Simplus Systems Corporation | High flow conductance and high thermal conductance showerhead system and method |
US6312110B1 (en) * | 1999-09-28 | 2001-11-06 | Brother International Corporation | Methods and apparatus for electrohydrodynamic ejection |
US6309042B1 (en) | 1999-09-30 | 2001-10-30 | Xerox Corporation | Marking materials and marking processes therewith |
US6364459B1 (en) * | 1999-10-05 | 2002-04-02 | Eastman Kodak Company | Printing apparatus and method utilizing light-activated ink release system |
US6772827B2 (en) * | 2000-01-20 | 2004-08-10 | Applied Materials, Inc. | Suspended gas distribution manifold for plasma chamber |
WO2001075188A2 (en) * | 2000-03-30 | 2001-10-11 | Tokyo Electron Limited | Method of and apparatus for gas injection |
JP4690556B2 (ja) * | 2000-07-21 | 2011-06-01 | 大日本印刷株式会社 | 微細パターン形成装置と微細ノズルの製造方法 |
US6467871B1 (en) * | 2000-11-28 | 2002-10-22 | Xerox Corporation | Ballistic aerosol marking process employing marking material comprising vinyl resin and poly (3,4-ethylenedioxypyrrole) |
US6439703B1 (en) * | 2000-12-29 | 2002-08-27 | Eastman Kodak Company | CMOS/MEMS integrated ink jet print head with silicon based lateral flow nozzle architecture and method of forming same |
US6811651B2 (en) * | 2001-06-22 | 2004-11-02 | Tokyo Electron Limited | Gas temperature control for a plasma process |
US20030000924A1 (en) * | 2001-06-29 | 2003-01-02 | Tokyo Electron Limited | Apparatus and method of gas injection sequencing |
CN1610763A (zh) * | 2001-08-24 | 2005-04-27 | Posco公司 | 在连续镀锌处理中控制钢带上的镀层重量的装置 |
US7404862B2 (en) * | 2001-09-04 | 2008-07-29 | The Trustees Of Princeton University | Device and method for organic vapor jet deposition |
US6864480B2 (en) * | 2001-12-19 | 2005-03-08 | Sau Lan Tang Staats | Interface members and holders for microfluidic array devices |
US6830701B2 (en) * | 2002-07-09 | 2004-12-14 | Eastman Kodak Company | Method for fabricating microelectromechanical structures for liquid emission devices |
US6884296B2 (en) * | 2002-08-23 | 2005-04-26 | Micron Technology, Inc. | Reactors having gas distributors and methods for depositing materials onto micro-device workpieces |
US20040040503A1 (en) * | 2002-08-29 | 2004-03-04 | Micron Technology, Inc. | Micromachines for delivering precursors and gases for film deposition |
JP2004158242A (ja) | 2002-11-05 | 2004-06-03 | Alps Electric Co Ltd | 電子機器の電源供給装置 |
US20040108061A1 (en) | 2002-12-06 | 2004-06-10 | Eastman Kodak Company | Apparatus and method for making a light-emitting display |
EP1491653A3 (en) * | 2003-06-13 | 2005-06-15 | Pioneer Corporation | Evaporative deposition methods and apparatus |
US7091134B1 (en) * | 2003-06-17 | 2006-08-15 | Novellus Systems, Inc. | Deposition of integrated circuit fabrication materials using a print head |
US7093930B2 (en) * | 2003-09-18 | 2006-08-22 | Hewlett-Packard Development Company, L.P. | Managing bubbles in a fluid-delivery device |
US7354869B2 (en) * | 2004-04-13 | 2008-04-08 | Kabushiki Kaisha Toshiba | Substrate processing method, substrate processing apparatus, and semiconductor device manufacturing method |
US7279704B2 (en) * | 2004-05-18 | 2007-10-09 | The University Of Southern California | Complexes with tridentate ligands |
JP4550507B2 (ja) * | 2004-07-26 | 2010-09-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
JP2006196804A (ja) * | 2005-01-17 | 2006-07-27 | Hitachi High-Technologies Corp | プラズマ処理装置用部材及びプラズマ処理装置 |
KR101153161B1 (ko) * | 2005-04-01 | 2012-06-18 | 주성엔지니어링(주) | 가스분사장치 및 이를 포함하는 액정표시소자의 제조장치 |
JP4251330B2 (ja) * | 2005-12-22 | 2009-04-08 | カシオ計算機株式会社 | 表示装置の製造装置及び表示装置の製造方法 |
US20070181529A1 (en) * | 2006-02-07 | 2007-08-09 | Subramanian Krupakar M | Corona discharge plasma source devices, and various systems and methods of using same |
JP5045000B2 (ja) * | 2006-06-20 | 2012-10-10 | 東京エレクトロン株式会社 | 成膜装置、ガス供給装置、成膜方法及び記憶媒体 |
US7789961B2 (en) * | 2007-01-08 | 2010-09-07 | Eastman Kodak Company | Delivery device comprising gas diffuser for thin film deposition |
WO2008121271A1 (en) * | 2007-03-30 | 2008-10-09 | Corning Incorporated | Three dimensional micro-fabricated burners |
JP5074076B2 (ja) * | 2007-04-03 | 2012-11-14 | 中外炉工業株式会社 | 基板の塗装装置および塗装方法 |
JP5169041B2 (ja) | 2007-07-03 | 2013-03-27 | 株式会社リコー | 液体吐出ヘッドユニット、画像形成装置 |
US20090047429A1 (en) * | 2007-08-16 | 2009-02-19 | Forrest Stephen R | Apparatus and Method for Deposition For Organic Thin Films |
US8182608B2 (en) | 2007-09-26 | 2012-05-22 | Eastman Kodak Company | Deposition system for thin film formation |
JP5192214B2 (ja) * | 2007-11-02 | 2013-05-08 | 東京エレクトロン株式会社 | ガス供給装置、基板処理装置および基板処理方法 |
KR100982985B1 (ko) * | 2008-04-07 | 2010-09-17 | 삼성엘이디 주식회사 | 화학 기상 증착 장치 |
US8613496B2 (en) * | 2009-03-25 | 2013-12-24 | The Regents Of The University Of Michigan | Compact organic vapor jet printing print head |
US8931431B2 (en) * | 2009-03-25 | 2015-01-13 | The Regents Of The University Of Michigan | Nozzle geometry for organic vapor jet printing |
US8123319B2 (en) * | 2009-07-09 | 2012-02-28 | Fujifilm Corporation | High speed high resolution fluid ejection |
US8851597B2 (en) * | 2010-07-01 | 2014-10-07 | The Regents Of The University Of Michigan | Gas cushion control of OVJP print head position |
US20130273239A1 (en) * | 2012-03-13 | 2013-10-17 | Universal Display Corporation | Nozzle design for organic vapor jet printing |
US20130335467A1 (en) * | 2012-06-18 | 2013-12-19 | Vistaprint Technologies Limited | System and method for automatically adjusting print tray position relative to print head nozzles |
US8728858B2 (en) * | 2012-08-27 | 2014-05-20 | Universal Display Corporation | Multi-nozzle organic vapor jet printing |
US20150290860A1 (en) * | 2014-04-09 | 2015-10-15 | Leon L. Shaw | Additive manufacture via high aspect ratio nozzles |
-
2010
- 2010-03-23 US US12/729,448 patent/US8931431B2/en active Active
- 2010-03-24 EP EP10710982.9A patent/EP2411556B1/en active Active
- 2010-03-24 WO PCT/US2010/028496 patent/WO2010111387A1/en active Application Filing
- 2010-03-24 JP JP2012502207A patent/JP6033679B2/ja active Active
- 2010-03-24 KR KR1020167028644A patent/KR20160122862A/ko not_active Application Discontinuation
- 2010-03-24 CN CN201080021167.6A patent/CN102428205B/zh active Active
- 2010-03-24 KR KR1020117025134A patent/KR101668021B1/ko active IP Right Grant
- 2010-03-24 KR KR1020177018120A patent/KR101887840B1/ko active IP Right Grant
- 2010-03-24 TW TW099108732A patent/TWI520854B/zh active
-
2014
- 2014-12-12 US US14/569,129 patent/US9797039B2/en active Active
-
2017
- 2017-09-29 US US15/719,972 patent/US10480056B2/en active Active
-
2019
- 2019-11-14 US US16/683,389 patent/US10941481B2/en active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4812326A (en) * | 1986-08-22 | 1989-03-14 | Mitsubishi Denki Kabushiki Kaisha | Evaporation source with a shaped nozzle |
JPS63183856A (ja) * | 1986-08-29 | 1988-07-29 | テクトロニックス・インコ−ポレイテッド | インクジェットヘッドの製造方法 |
JPH06122197A (ja) * | 1992-08-25 | 1994-05-06 | Ngk Insulators Ltd | インクジェットプリントヘッド |
JPH11514499A (ja) * | 1995-10-23 | 1999-12-07 | ワトキンズ−ジョンソン カンパニー | 半導体のイオン注入用ガス噴射システム |
JPH10175316A (ja) * | 1996-10-14 | 1998-06-30 | Sony Corp | プリンタ装置 |
JP2005502779A (ja) * | 2001-09-04 | 2005-01-27 | ザ、トラスティーズ オブ プリンストン ユニバーシティ | 有機蒸気噴流沈着用の方法および装置 |
JP2007520854A (ja) * | 2003-10-23 | 2007-07-26 | ザ、トラスティーズ オブ プリンストン ユニバーシティ | 限定された保護流体を使用することによって有機蒸気ジェット堆積の方位分解能を増加させる方法 |
JP2008517780A (ja) * | 2004-10-21 | 2008-05-29 | フジフィルム ディマティックス,インコーポレイテッド | エッチングのための犠牲基板 |
US20070057387A1 (en) * | 2005-09-13 | 2007-03-15 | Xerox Corporation | Ballistic aerosol marking venturi pipe geometry for printing onto a transfuse substrate |
US20080152806A1 (en) * | 2006-12-22 | 2008-06-26 | Stephen Forrest | Organic vapor jet deposition using an exhaust |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180129690A (ko) * | 2017-05-26 | 2018-12-05 | 유니버셜 디스플레이 코포레이션 | 고해상도 인쇄가 가능한 범용 유기 기상 젯 증착기 및 ovjp 인쇄 방법 |
JP2019023344A (ja) * | 2017-05-26 | 2019-02-14 | ユニバーサル ディスプレイ コーポレイション | 高解像プリンティングが可能な汎用有機蒸気ジェットデポジタ、及びovjpプリンティングのための方法 |
JP7125860B2 (ja) | 2017-05-26 | 2022-08-25 | ユニバーサル ディスプレイ コーポレイション | 高解像プリンティングが可能な汎用有機蒸気ジェットデポジタ、及びovjpプリンティングのための方法 |
KR102511825B1 (ko) | 2017-05-26 | 2023-03-17 | 유니버셜 디스플레이 코포레이션 | 고해상도 인쇄가 가능한 범용 유기 기상 젯 증착기 및 ovjp 인쇄 방법 |
Also Published As
Publication number | Publication date |
---|---|
US20180030588A1 (en) | 2018-02-01 |
WO2010111387A1 (en) | 2010-09-30 |
US20100247766A1 (en) | 2010-09-30 |
TW201102275A (en) | 2011-01-16 |
CN102428205A (zh) | 2012-04-25 |
KR101887840B1 (ko) | 2018-08-10 |
US20200140990A1 (en) | 2020-05-07 |
KR101668021B1 (ko) | 2016-10-20 |
US10941481B2 (en) | 2021-03-09 |
US20150140214A1 (en) | 2015-05-21 |
EP2411556B1 (en) | 2018-11-28 |
US10480056B2 (en) | 2019-11-19 |
US8931431B2 (en) | 2015-01-13 |
EP2411556A1 (en) | 2012-02-01 |
TWI520854B (zh) | 2016-02-11 |
KR20160122862A (ko) | 2016-10-24 |
JP6033679B2 (ja) | 2016-11-30 |
US9797039B2 (en) | 2017-10-24 |
CN102428205B (zh) | 2016-09-14 |
KR20120000100A (ko) | 2012-01-03 |
KR20170081724A (ko) | 2017-07-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5766688B2 (ja) | 小型有機蒸気ジェット印刷プリントヘッド | |
JP6033679B2 (ja) | 有機蒸気ジェット印刷用のノズルの幾何学的形状 | |
JP4941305B2 (ja) | 接合装置 | |
JP2017538399A (ja) | 液体の気化のためのマイクロ流体を基礎とする装置及び方法 | |
WO2013159075A1 (en) | Near-field radiative thermal coupling and related devices and techniques | |
Forrest et al. | Compact organic vapor jet printing print head | |
Breuer et al. | Measurement of shear stress and temperature using MEMS fabricated sensors | |
Leblanc et al. | Evaporative printing of organic materials at ambient pressure using a micromachined printhead | |
Palmer et al. | Development of a suspended, robust, thermally insulated micro chamber of thick silicon dioxide for microthrusters and micoreactors |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130318 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20131209 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20131217 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140317 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140325 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20140929 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150129 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20150311 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20150515 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20160408 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160708 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20161026 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6033679 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |