JP2012518899A - 基板とクランプ準備ユニットをクランプする方法 - Google Patents
基板とクランプ準備ユニットをクランプする方法 Download PDFInfo
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Abstract
【解決手段】本発明は、基板支持構造体(23)の表面に基板(22)をクランプする方法に関する。最初に、基板支持構造体の表面上に液体が塗布される。表面には、複数の接触要素が設けられている。液体は、接触要素が液体層によって完全に覆われるように塗布される。それから、基板が、液体層上に提供され配置される。最後に、基板が複数の接触要素にもたれ、基板と基板支持構造体の表面との間の液体の毛細管層によって及ぼされる毛細管クランプ力によってクランプされるように、基板の下の液体が除去される。
【選択図】
Description
図11は、たとえば図7A〜7Jを参照して説明される基板支持構造体上に基板をクランプする方法の自動化実施形態に使用され得るクランプ準備ユニットの実施形態を示している。
以下に、本願出願の当初の特許請求の範囲に記載された発明を付記する。
[1]基板支持構造体(23;123)の表面上に基板(22;122)をクランプする方法であり、
前記基板支持構造体の前記表面(26)に液体を塗布することを備えており、前記表面には、複数の接触要素(27)が設けられており、前記液体は、前記接触要素を覆う層(94;125)を形成し、
前記基板を用意し前記液体層上に前記基板を配置することを備えており、
前記基板が、前記複数の接触要素にもたれ、前記基板と前記基板支持構造体の前記表面との間の前記液体の毛細管層によって及ぼされる毛細管クランプ力によってクランプされるように、前記基板の下から前記液体の一部を除去することを備えており、前記毛細管層は、前記毛細管層と前記基板の間に第1の接触角と、前記毛細管層と前記基板支持構造体の間に第2の接触角をもつ外側液体表面を有している、方法。
[2]前記液体の一部を除去することは、前記基板の下の圧力を下げることを備えている、[1]の方法。
[3]前記液体の一部を除去することは、前記表面の周囲に沿って気体フローを供給することを備えている、[1]または[2]の方法。
[4]前記気体フローは、基板支持構造体を取り巻く圧力よりも低い圧力で供給される、[3]の方法。
[5]前記気体は、蒸気飽和の50%未満、好ましくは10%未満の蒸気内容物を有している気体であり、前記蒸気は、前記毛細管層の前記液体と同じ物質をある、[3]または[4]の方法。
[6]前記液体を塗布する前記工程の前に前記基板支持構造体を真空チャンバー内に配置することをさらに備えている、[1]〜[5]のいずれか一つの方法。
[7]前記液体を塗布する前記工程の前に前記真空チャンバー内の気体圧力を下げることをさらに備えている、[6]の方法。
[8]前記気体圧力は、前記液体層の前記液体の前記蒸気圧と実質的に等しい圧力に下げられる、[7]の方法。
[9]溶け込んだ気体および/または吸い込まれた泡が液体層から拡散するのを可能にする所定の期間だけ休止することをさらに備えている、[7]または[8]の方法。
[10]前記基板は前記液体層上に、前記液体層の上表面に対して初期角をもって配置される、[1]〜[9]のいずれか一つの方法。
[11]前記初期角は、5度よりも大きい鋭角である、[10]の方法。
[12]角をもって配置することは、複数の基板支持ピンの個別制御によっておこなわれる、[10]または[11]の方法。
[13]前記毛細管層に蒸気を供給することによって前記毛細管層からの蒸発を低減することをさらに備えている、[1]〜[12]のいずれか一つの方法。
[14]前記蒸気は水蒸気である、[13]の方法。
[15]前記液体は水である、[1]〜[14]のいずれか一つの方法
[16]前記基板はウェーハである、[1]〜[15]のいずれか一つの方法。
[17]基板(22;122)をクランプするためのクランプ準備ユニット(112)であり、
複数の接触要素(27)が設けられた表面を有している基板支持構造体(23;123)と、
前記接触要素が液体層(94;125)によって覆われるように、前記基板支持構造体の表面上に液体を塗布するための液体供給ユニット(124)と、
前記液体層上に前記基板を配置するための基板移動ユニット(127)と、
前記基板が、前記複数の接触要素にもたれ、前記基板と前記基板支持構造体の前記表面との間の前記液体の毛細管層によって及ぼされる毛細管クランプ力によってクランプされるように、前記基板の下から前記液体の一部を除去するための液体除去システム(33,35;126a,126b)を備えており、前記除去システムは気体分配システム(33,35;126a,126b)を備えており、
前記基板支持構造体は前記表面の周囲を囲んでいるシール構造体(29)をさらに備えており、前記気体分配システムによって供給される前記気体は前記表面と前記シール構造体の間に流れることができる、クランプ準備ユニット。
[18]前記液体除去システム(33,35;126a,126b)は、前記表面の周囲に前記液体の一部を除去するように適合されている、[17]のクランプ準備ユニット。
[19]前記気体分配システムは、気体を供給するための少なくとも一つの気体入口(33)と、気体を除去するための少なくとも一つの気体出口(35)を備えている、[17]のクランプ準備ユニット。
[20]前記気体分配システムは、互いにほぼ等距離の位置にある複数の気体入口(33)と複数の気体出口(35)を有している、[17]のクランプ準備ユニット。
[21]前記基板移動ユニット(127)は、前記基板を前記液体層上に前記基板を前記液体層上に、前記液体層の上表面に対して初期角をもって配置するように適合されている、[17]〜[23]のいずれか一つのクランプ準備ユニット。
[22]前記初期角は、5度よりも大きい鋭角である、[21]のクランプ準備ユニット。
[23]前記基板移動ユニット(127)は、複数の基板支持ピンを備えており、前記初期角をもって配置することは、前記基板支持ピンの個別制御によっておこなわれる、[21]または[22]のクランプ準備ユニット。
[24]前記シール構造体は、前記基板支持構造体の前記複数の接触要素の高さに相当する高さを有している、[17]〜[23]のいずれか一つのクランプ準備ユニット。
[25]前記基板支持構造体の表面は複数の下位表面に分割されている、[17]〜[24]のいずれか一つのクランプ準備ユニット。
[26]前記液体除去システムは、各下位表面の周囲の液体を除去するように構成されている、[25]のクランプ準備ユニット。
[27]少なくとも一つの下位表面は、実質的に六角形形状をしている、[25]または[26]のクランプ準備ユニット。
[28]前記基板支持構造体は、
リザーバー液体と前記リザーバー液体の蒸気を貯蔵するためのリザーバー(41)と、
毛細管層21が存在するときにそれに前記リザーバー液体の蒸気を供給するように前記リザーバーを受け表面に接続している蒸気移動システム(43)をさらに備えている、[17]〜[27]のいずれか一つのクランプ準備ユニット。
[29]前記リザーバーは、前記受け表面の下に広がっている、[28]のクランプ準備ユニット。
[30]前記リザーバーは、前記受け表面から分離可能である、[28]または[29]のクランプ準備ユニット。
[31]使用時、前記毛細管層は凹状成形外側表面を有しており、前記リザーバー内の前記液体の自由表面積は前記凹状成形外側表面よりも大きい、[28]〜[30]のいずれか一つのクランプ準備ユニット。
[32]前記基板支持構造体を気体サプライに接続するための気体接続ユニットをさらに備えている、[28]−31のいずれか一つのクランプ準備ユニット。
[33]前記気体接続ユニットは前記蒸気移動システムに接続される、[32]のクランプ準備ユニット。
[34]前記蒸気移動システムは、前記リザーバーから生じる蒸気から前記気体接続ユニットを介して気体フローを分離するためのフロー制御ユニットを備えている、[33]のクランプ準備ユニット。
[35]前記基板支持構造体の前記表面は、高くした周囲リム(51)をさらに備えている、[28]〜[34]のいずれか一つのクランプ準備ユニット。
[36]前記周囲リムは、前記基板支持構造体の前記複数の接触要素の高さに一致するか、それよりも小さい高さを有している、[35]のクランプ準備ユニット。
[37]基板支持構造体(23;123)から基板(22;122)をアンクランプする方法であり、前記基板は、前記基板と前記基板支持構造体の間の液体の毛細管層(1;21)によって及ぼされる毛細管クランプ力によってクランプされており、
前記毛細管層の外側周囲表面において前記毛細管層に追加液体を供給することと、
前記基板を前記液体から持ち上げることを備えている、方法。
[38]前記基板が前記液体の層の上に浮かび始めるように、十分な追加液体が供給される、[37]の方法。
[39]前記基板は、初期傾斜角で前記液体から持ち上げられる、[37]または[38]の方法。
[40]アンクランプユニット(112)であり、
基板支持構造体であって、その表面上に毛細管層(1;21)によってクランプされた基板(22;122)を有している基板支持構造体(23;123)と、
前記毛細管層の外側周囲表面において前記基板の下の前記毛細管層に追加液体を供給するための液体除去システム(33,35;126a,126b)と、
前記基板を前記液体層から取り外すための基板移動ユニット(127)を備えている、アンクランプユニット。
[41]前記基板移動ユニット(127)は前記基板を前記液体から、前記液体層の上表面に対して初期角をもって持ち上げるように適合されている、[40]のアンクランプユニット。
[42]前記初期角は、5度よりも大きい鋭角である、[41]のアンクランプユニット。
[43]前記基板移動ユニット(127)は、複数の基板支持ピンを備えており、前記初期角をもって持ち上げることは、前記基板支持ピンの個別制御によっておこなわれる、[40]〜[42]のいずれか一つのアンクランプユニット。
[44]リソグラフィ装置を備えているリソグラフィシステムであり、
放射のパターンビームを供給する放射系と、
基板の標的部分に前記放射のパターンビームを投影する光学系と、
基板支持構造体の表面上に前記基板をクランプするための[17]〜[36]のいずれか一つに記載のクランプ準備ユニットを備えている、リソグラフィシステム。
[45][40]〜[43]のいずれか一つに記載のアンクランプユニットを備えている、[44]のリソグラフィシステム。
[46]前記放射のパターンビームは、複数の荷電粒子ビームレットによって形成されている、[44]または[45]のリソグラフィシステム。
[47]前記荷電粒子ビームレットは、電子ビームレットである、[46]のリソグラフィシステム。
Claims (47)
- 基板支持構造体(23;123)の表面上に基板(22;122)をクランプする方法であり、
前記基板支持構造体の前記表面(26)に液体を塗布することを備えており、前記表面には、複数の接触要素(27)が設けられており、前記液体は、前記接触要素を覆う層(94;125)を形成し、
前記基板を用意し前記液体層上に前記基板を配置することを備えており、
前記基板が、前記複数の接触要素にもたれ、前記基板と前記基板支持構造体の前記表面との間の前記液体の毛細管層によって及ぼされる毛細管クランプ力によってクランプされるように、前記基板の下から前記液体の一部を除去することを備えており、前記毛細管層は、前記毛細管層と前記基板の間に第1の接触角と、前記毛細管層と前記基板支持構造体の間に第2の接触角をもつ外側液体表面を有している、方法。 - 前記液体の一部を除去することは、前記基板の下の圧力を下げることを備えている、請求項1の方法。
- 前記液体の一部を除去することは、前記表面の周囲に沿って気体フローを供給することを備えている、請求項1または請求項2の方法。
- 前記気体フローは、基板支持構造体を取り巻く圧力よりも低い圧力で供給される、請求項3の方法。
- 前記気体は、蒸気飽和の50%未満、好ましくは10%未満の蒸気内容物を有している気体であり、前記蒸気は、前記毛細管層の前記液体と同じ物質をある、請求項3または請求項4の方法。
- 前記液体を塗布する前記工程の前に前記基板支持構造体を真空チャンバー内に配置することをさらに備えている、請求項1〜5のいずれか一つの方法。
- 前記液体を塗布する前記工程の前に前記真空チャンバー内の気体圧力を下げることをさらに備えている、請求項6の方法。
- 前記気体圧力は、前記液体層の前記液体の前記蒸気圧と実質的に等しい圧力に下げられる、請求項7の方法。
- 溶け込んだ気体および/または吸い込まれた泡が液体層から拡散するのを可能にする所定の期間だけ休止することをさらに備えている、請求項7または請求項8の方法。
- 前記基板は前記液体層上に、前記液体層の上表面に対して初期角をもって配置される、請求項1〜9のいずれか一つの方法。
- 前記初期角は、5度よりも大きい鋭角である、請求項10の方法。
- 角をもって配置することは、複数の基板支持ピンの個別制御によっておこなわれる、請求項10または請求項11の方法。
- 前記毛細管層に蒸気を供給することによって前記毛細管層からの蒸発を低減することをさらに備えている、請求項1〜12のいずれか一つの方法。
- 前記蒸気は水蒸気である、請求項13の方法。
- 前記液体は水である、請求項1〜14のいずれか一つの方法
- 前記基板はウェーハである、請求項1〜15のいずれか一つの方法。
- 基板(22;122)をクランプするためのクランプ準備ユニット(112)であり、
複数の接触要素(27)が設けられた表面を有している基板支持構造体(23;123)と、
前記接触要素が液体層(94;125)によって覆われるように、前記基板支持構造体の表面上に液体を塗布するための液体供給ユニット(124)と、
前記液体層上に前記基板を配置するための基板移動ユニット(127)と、
前記基板が、前記複数の接触要素にもたれ、前記基板と前記基板支持構造体の前記表面との間の前記液体の毛細管層によって及ぼされる毛細管クランプ力によってクランプされるように、前記基板の下から前記液体の一部を除去するための液体除去システム(33,35;126a,126b)を備えており、前記除去システムは気体分配システム(33,35;126a,126b)を備えており、
前記基板支持構造体は前記表面の周囲を囲んでいるシール構造体(29)をさらに備えており、前記気体分配システムによって供給される前記気体は前記表面と前記シール構造体の間に流れることができる、クランプ準備ユニット。 - 前記液体除去システム(33,35;126a,126b)は、前記表面の周囲に前記液体の一部を除去するように適合されている、請求項17のクランプ準備ユニット。
- 前記気体分配システムは、気体を供給するための少なくとも一つの気体入口(33)と、気体を除去するための少なくとも一つの気体出口(35)を備えている、請求項17のクランプ準備ユニット。
- 前記気体分配システムは、互いにほぼ等距離の位置にある複数の気体入口(33)と複数の気体出口(35)を有している、請求項17のクランプ準備ユニット。
- 前記基板移動ユニット(127)は、前記基板を前記液体層上に前記基板を前記液体層上に、前記液体層の上表面に対して初期角をもって配置するように適合されている、請求項17〜23のいずれか一つのクランプ準備ユニット。
- 前記初期角は、5度よりも大きい鋭角である、請求項21のクランプ準備ユニット。
- 前記基板移動ユニット(127)は、複数の基板支持ピンを備えており、前記初期角をもって配置することは、前記基板支持ピンの個別制御によっておこなわれる、請求項21または請求項22のクランプ準備ユニット。
- 前記シール構造体は、前記基板支持構造体の前記複数の接触要素の高さに相当する高さを有している、請求項17〜23のいずれか一つのクランプ準備ユニット。
- 前記基板支持構造体の表面は複数の下位表面に分割されている、請求項17〜24のいずれか一つのクランプ準備ユニット。
- 前記液体除去システムは、各下位表面の周囲の液体を除去するように構成されている、請求項25のクランプ準備ユニット。
- 少なくとも一つの下位表面は、実質的に六角形形状をしている、請求項25または請求項26のクランプ準備ユニット。
- 前記基板支持構造体は、
リザーバー液体と前記リザーバー液体の蒸気を貯蔵するためのリザーバー(41)と、
毛細管層21が存在するときにそれに前記リザーバー液体の蒸気を供給するように前記リザーバーを受け表面に接続している蒸気移動システム(43)をさらに備えている、請求項17〜27のいずれか一つのクランプ準備ユニット。 - 前記リザーバーは、前記受け表面の下に広がっている、請求項28のクランプ準備ユニット。
- 前記リザーバーは、前記受け表面から分離可能である、請求項28または請求項29のクランプ準備ユニット。
- 使用時、前記毛細管層は凹状成形外側表面を有しており、前記リザーバー内の前記液体の自由表面積は前記凹状成形外側表面よりも大きい、請求項28〜30のいずれか一つのクランプ準備ユニット。
- 前記基板支持構造体を気体サプライに接続するための気体接続ユニットをさらに備えている、請求項28−31のいずれか一つのクランプ準備ユニット。
- 前記気体接続ユニットは前記蒸気移動システムに接続される、請求項32のクランプ準備ユニット。
- 前記蒸気移動システムは、前記リザーバーから生じる蒸気から前記気体接続ユニットを介して気体フローを分離するためのフロー制御ユニットを備えている、請求項33のクランプ準備ユニット。
- 前記基板支持構造体の前記表面は、高くした周囲リム(51)をさらに備えている、請求項28〜34のいずれか一つのクランプ準備ユニット。
- 前記周囲リムは、前記基板支持構造体の前記複数の接触要素の高さに一致するか、それよりも小さい高さを有している、請求項35のクランプ準備ユニット。
- 基板支持構造体(23;123)から基板(22;122)をアンクランプする方法であり、前記基板は、前記基板と前記基板支持構造体の間の液体の毛細管層(1;21)によって及ぼされる毛細管クランプ力によってクランプされており、
前記毛細管層の外側周囲表面において前記毛細管層に追加液体を供給することと、
前記基板を前記液体から持ち上げることを備えている、方法。 - 前記基板が前記液体の層の上に浮かび始めるように、十分な追加液体が供給される、請求項37の方法。
- 前記基板は、初期傾斜角で前記液体から持ち上げられる、請求項37または請求項38の方法。
- アンクランプユニット(112)であり、
基板支持構造体であって、その表面上に毛細管層(1;21)によってクランプされた基板(22;122)を有している基板支持構造体(23;123)と、
前記毛細管層の外側周囲表面において前記基板の下の前記毛細管層に追加液体を供給するための液体除去システム(33,35;126a,126b)と、
前記基板を前記液体層から取り外すための基板移動ユニット(127)を備えている、アンクランプユニット。 - 前記基板移動ユニット(127)は前記基板を前記液体から、前記液体層の上表面に対して初期角をもって持ち上げるように適合されている、請求項40のアンクランプユニット。
- 前記初期角は、5度よりも大きい鋭角である、請求項41のアンクランプユニット。
- 前記基板移動ユニット(127)は、複数の基板支持ピンを備えており、前記初期角をもって持ち上げることは、前記基板支持ピンの個別制御によっておこなわれる、請求項40〜42のいずれか一つのアンクランプユニット。
- リソグラフィ装置を備えているリソグラフィシステムであり、
放射のパターンビームを供給する放射系と、
基板の標的部分に前記放射のパターンビームを投影する光学系と、
基板支持構造体の表面上に前記基板をクランプするための請求項17〜36のいずれか一つに記載のクランプ準備ユニットを備えている、リソグラフィシステム。 - 請求項40〜43のいずれか一つに記載のアンクランプユニットを備えている、請求項44のリソグラフィシステム。
- 前記放射のパターンビームは、複数の荷電粒子ビームレットによって形成されている、請求項44または請求項45のリソグラフィシステム。
- 前記荷電粒子ビームレットは、電子ビームレットである、請求項46のリソグラフィシステム。
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- 2010-02-18 CN CN201080017866.3A patent/CN102422385B/zh active Active
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Also Published As
Publication number | Publication date |
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GB2469112A (en) | 2010-10-06 |
EP2399278A1 (en) | 2011-12-28 |
JP5762982B2 (ja) | 2015-08-12 |
CN102422385A (zh) | 2012-04-18 |
KR20110128890A (ko) | 2011-11-30 |
TWI540670B (zh) | 2016-07-01 |
TW201626498A (zh) | 2016-07-16 |
US20100265486A1 (en) | 2010-10-21 |
KR101757311B1 (ko) | 2017-07-26 |
CN102422385B (zh) | 2016-01-06 |
WO2010094748A1 (en) | 2010-08-26 |
USRE49725E1 (en) | 2023-11-14 |
US20160370704A1 (en) | 2016-12-22 |
KR101624193B1 (ko) | 2016-05-26 |
TWI596699B (zh) | 2017-08-21 |
US10078274B2 (en) | 2018-09-18 |
TW201044492A (en) | 2010-12-16 |
US9460954B2 (en) | 2016-10-04 |
EP3557606A1 (en) | 2019-10-23 |
KR20160063411A (ko) | 2016-06-03 |
EP2399278B1 (en) | 2019-09-18 |
EP3557606B1 (en) | 2020-08-26 |
GB0905786D0 (en) | 2009-05-20 |
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