JP2012238849A - 改良された多結晶テクスチャ化組成物および方法 - Google Patents
改良された多結晶テクスチャ化組成物および方法 Download PDFInfo
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- JP2012238849A JP2012238849A JP2012095185A JP2012095185A JP2012238849A JP 2012238849 A JP2012238849 A JP 2012238849A JP 2012095185 A JP2012095185 A JP 2012095185A JP 2012095185 A JP2012095185 A JP 2012095185A JP 2012238849 A JP2012238849 A JP 2012238849A
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- semiconductor wafer
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- 239000000203 mixture Substances 0.000 title claims abstract description 77
- 238000000034 method Methods 0.000 title claims description 37
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- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 13
- 229910017604 nitric acid Inorganic materials 0.000 claims description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 9
- 230000001590 oxidative effect Effects 0.000 claims description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- 150000003839 salts Chemical class 0.000 claims description 6
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- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical compound Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 claims description 4
- LLYCMZGLHLKPPU-UHFFFAOYSA-M perbromate Chemical compound [O-]Br(=O)(=O)=O LLYCMZGLHLKPPU-UHFFFAOYSA-M 0.000 claims description 4
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- 125000004169 (C1-C6) alkyl group Chemical group 0.000 claims description 2
- 125000006577 C1-C6 hydroxyalkyl group Chemical group 0.000 claims description 2
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- GRNRCQKEBXQLAA-UHFFFAOYSA-M triethyl(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CCO GRNRCQKEBXQLAA-UHFFFAOYSA-M 0.000 description 1
- JAJRRCSBKZOLPA-UHFFFAOYSA-M triethyl(methyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(CC)CC JAJRRCSBKZOLPA-UHFFFAOYSA-M 0.000 description 1
- GPHXJBZAVNFMKX-UHFFFAOYSA-M triethyl(phenyl)azanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)C1=CC=CC=C1 GPHXJBZAVNFMKX-UHFFFAOYSA-M 0.000 description 1
- HADKRTWCOYPCPH-UHFFFAOYSA-M trimethylphenylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C1=CC=CC=C1 HADKRTWCOYPCPH-UHFFFAOYSA-M 0.000 description 1
- IJGSGCGKAAXRSC-UHFFFAOYSA-M tris(2-hydroxyethyl)-methylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(CCO)CCO IJGSGCGKAAXRSC-UHFFFAOYSA-M 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
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Abstract
【解決手段】アルカリ化合物、フッ化物イオンおよび酸化剤を含む酸性水性組成物を用い、多結晶シリコンの等方性エッチングを行なうことにより、露出した粒界を含まず、400nm〜1100nmの入射光波長での入射光反射率が20%以下となるテクスチャが得られる。
【選択図】図2
Description
別の形態においては、方法は多結晶半導体ウェハを提供し;並びに1種以上のアルカリ化合物、1種以上のフッ化物イオン源、1種以上の酸化剤源、および7未満のpHを含む組成物と前記多結晶半導体ウェハとを接触させて、前記多結晶半導体ウェハを等方的にエッチングすることを含む。
10%フッ化水素酸および50%硝酸を含む等方性テクスチャ化水溶液が調製された。この酸混合物テクスチャ化溶液のpHは1未満であった。従来の分析天秤を用いてバルクドープ(bulk−doped)多結晶シリコンウェハ125mm2が秤量され、その重量が記録された。次いで、ウェハは等方性テクスチャ化水溶液に10℃で3分間浸漬された。次いで、ウェハはこの溶液から取り出され、そして脱イオン水で1分間すすがれ、そして室温で乾燥させられた。このウェハが秤量された。従来の方法を用いてテクスチャ化の際の重量損失、ウェハの面積およびケイ素の密度から、ウェハの両面におけるエッチングの量が4.5μmであると計算された。図1はこのテクスチャ化されたウェハの表面の5000倍SEMである。観察可能な露出した粒界は存在していなかった。
9%水酸化テトラメチルアンモニウムを含む異方性テクスチャ化アルカリ水溶液が調製された。このテクスチャ化溶液のpHは13より大きかった。従来の分析天秤を用いてバルクドープ多結晶シリコンウェハが秤量され、その重量が記録された。次いで、ウェハは異方性テクスチャ化水溶液に70℃で5分間浸漬された。次いで、ウェハはこの溶液から取り出され、そして脱イオン水で1分間すすがれ、そして室温で乾燥させられた。このウェハが秤量された。ウェハの両面におけるエッチングの量が4.38μmであると計算された。図3はこのテクスチャ化されたウェハの表面の2500倍SEMである。前述のSEMはこのアルカリTMAHテクスチャ化によって形成されたピラミッド構造を示す。このピラミッド構造の後ろの領域はTMAHアルカリ溶液によって生じた望まれない露出した粒界を示す。この粒界は実施例1〜5の等方性テクスチャ化においては観察されなかった。
Claims (11)
- 1種以上のアルカリ化合物、1種以上のフッ化物イオン源、1種以上の酸化剤源、および7未満のpHを含む組成物。
- 1種以上のアルカリ化合物がアルカノールアミンおよび第四級アンモニウム化合物から選択される請求項1に記載の組成物。
- アルカノールアミンが一般式:
R3−nN(CmH2m(OH))n
(式中、Rは水素原子または1〜4個の炭素を有するアルキル基であり、mは2〜4の整数であり、nは1〜3の整数である)を有する、請求項2に記載の組成物。 - 1種以上のフッ化物イオンがビフルオリドおよびフッ化物塩から選択される請求項1に記載の化合物。
- 1種以上の酸化剤が、過酸化水素およびその塩、次亜塩素酸塩、過硫酸塩、過酸化有機酸、過マンガン酸塩、次亜塩素酸ナトリウム、過炭酸ナトリウム、塩素酸塩、硝酸およびその塩、過ヨウ素酸塩、過臭素酸塩、ヨウ素酸塩、過塩素酸塩および臭素酸塩から選択される、請求項1に記載の組成物。
- pHが3〜5である請求項1に記載の組成物。
- a)多結晶半導体ウェハを提供し;並びに
b)1種以上のアルカリ化合物、1種以上のフッ化物イオン源、1種以上の酸化剤源、および7未満のpHを含む組成物と、前記多結晶半導体ウェハとを接触させて、非ドープ半導体ウェハを等方的にエッチングする;
ことを含む方法。 - 多結晶半導体ウェハが400nm〜1100nmの入射光波長で22%以下の入射光反射率を有する、請求項8の方法に従って処理された多結晶半導体ウェハ。
- 400nm〜1100nmの入射光波長で入射光反射率が20%以下である、請求項9に記載の多結晶半導体ウェハ。
- 多結晶半導体の表面が、露出した粒界を実質的に含まない、請求項9に記載の多結晶半導体ウェハ。
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WO2022190903A1 (ja) * | 2021-03-11 | 2022-09-15 | 富士フイルム株式会社 | 半導体処理用組成物、被処理物の処理方法 |
KR20240031136A (ko) | 2022-08-30 | 2024-03-07 | 가부시끼가이샤 도꾸야마 | 실리콘 에칭액 및 그 제조 방법, 기판의 처리 방법, 그리고 실리콘 디바이스의 제조 방법 |
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EP2514799A1 (en) | 2012-10-24 |
CN102839377B (zh) | 2015-08-19 |
CN102839377A (zh) | 2012-12-26 |
JP2017108150A (ja) | 2017-06-15 |
US20120267627A1 (en) | 2012-10-25 |
US9663715B2 (en) | 2017-05-30 |
SG10201406789VA (en) | 2014-12-30 |
SG185231A1 (en) | 2012-11-29 |
TW201247842A (en) | 2012-12-01 |
TWI454557B (zh) | 2014-10-01 |
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