JP2012235101A - パッケージ支持面にクリップを利用する高電圧iii族窒化物整流器パッケージ - Google Patents
パッケージ支持面にクリップを利用する高電圧iii族窒化物整流器パッケージ Download PDFInfo
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- JP2012235101A JP2012235101A JP2012094150A JP2012094150A JP2012235101A JP 2012235101 A JP2012235101 A JP 2012235101A JP 2012094150 A JP2012094150 A JP 2012094150A JP 2012094150 A JP2012094150 A JP 2012094150A JP 2012235101 A JP2012235101 A JP 2012235101A
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- iii
- diode
- package
- support surface
- nitride transistor
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 34
- 239000004065 semiconductor Substances 0.000 claims description 25
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 241000587161 Gomphocarpus Species 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 13
- 229910002601 GaN Inorganic materials 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 229910000679 solder Inorganic materials 0.000 description 6
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- 229910021480 group 4 element Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
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- 239000002356 single layer Substances 0.000 description 2
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- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- -1 gallium phosphide nitride Chemical class 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- 229910052594 sapphire Inorganic materials 0.000 description 1
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- 238000000926 separation method Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
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- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】パッケージ支持面260に取り付け、III族窒化物トランジスタ230のソースにスタックされたダイオード220のアノードを有するIII族窒化物トランジスタ230と、III族窒化物トランジスタ230のゲートおよびダイオード220のアノードに結合した第1の導電性クリップ212bと、III族窒化物トランジスタ230のドレインに結合した第2の導電性クリップ212aとを含む。導電性クリップ212a、212bはパッケージ支持面260に結合され、表面実装性の平担部を露出する。
【選択図】図2J
Description
「ゲートとドレインとの間に低減した電界を有するエンハンスメントモードのIII族窒化物半導体素子」のタイトルで2010年6月29日に発行された米国特許第7,745,849号、
「III族窒化物エンハンスメントモード素子」のタイトルで2010年7月20日に発行された米国特許第7,759,699号、
「エンハンスメントモードのIII族窒化物FET」のタイトルで2008年6月3日に発行された米国特許第7,382,001号、
「上部トランジスタの超格子変性」のタイトルで2006年9月26日に発行された米国特許第7,112,830号、
「上部トランジスタの超格子変性」のタイトルで2008年11月25日に発行された米国特許第7,456,442号、
「窒化ガリウム材料と関連する製造方法」のタイトルで2008年3月4日に発行された米国特許第7,339,205号、
「障壁/スペーサ層を有するIII族窒化物系高電子移動度トランジスタ(HEMT)」のタイトルで2005年2月1日に発行された米国特許第6,849,882号、
「窒化ガリウム材料と方法」のタイトルで2003年9月9日に発行された米国特許第6,617,060号、
「窒化ガリウム材料と方法」のタイトルで2003年11月18日に発行された米国特許第6,649,287号、
「GaN/AlXGa1-XNヘテロ接合高電子移動度トランジスタ」のタイトルで1993年3月9日に発行された米国特許第5,192,987号、
「張力緩和中間層を備えたIII−V族半導体素子」のタイトルで2009年10月14日に出願された米国特許出願第12/587,964号、
「応力変調III−V族半導体素子と関連製法」のタイトルで2010年12月21日に出願された米国特許出願第12/928,946号、
「寄生電流路を防ぐ交互高低温層を用いた超格子の製造方法」のタイトルで2006年9月13日に出願された米国特許出願第11/531,508号、
「アルミニウムドープされたゲートを備えるプログラマブルIII族窒化物トランジスタ」のタイトルで2011年2月4日に出願された米国特許出願第13/021,437号、
「単一ゲート誘電構造を備えるエンハンスメントモードのIII族窒化物トランジスタ」のタイトルで2011年1月31日に出願された米国特許出願第13/017,970号、
「ゲートAlGaN/GaNヘテロ接合ショットキー素子」のタイトルで2009年12月7日に出願された米国特許出願第12/653,097号、
「フローティングゲートを備えたエンハンスメントモードのIII族窒化物素子と、その製造方法」のタイトルで2008年8月21日に出願された米国特許出願第12/195,801号、
「ゲートとドレインとの間に低減した電界を備えるIII族窒化物半導体素子と、その製造方法」のタイトルで2008年9月16日に出願された米国特許出願第12/211,120号、
「プログラマブルゲートを有するIII族窒化物パワー半導体素子」のタイトルで2007年9月8日に出願された米国特許出願第11/857,113号、
「III族窒化物ヘテロ接合素子、HEMT、関連する素子構造」のタイトルで2011年2月28日に出願された米国特許仮出願第61/447,479号、
「ゲートAlGaN/GaNヘテロ接合ショットキー素子」のタイトルで2011年3月3日に出願された米国特許仮出願第61/449,046号。
また、III族窒化物FETが高電圧III−N FETであるのが望ましい。III−N FET130は、200V〜5000VのVdrainでの動作に最適化することができるか、またはFET130は500V〜700Vの間、若しくは200V〜5000Vの間の任意他の下位範囲での動作に最適化してもよい。
Claims (20)
- パッケージ支持面と、
ゲート、ソース、およびドレインを有し、前記パッケージ支持面に取り付けたIII族窒化物トランジスタと、
アノードおよびカソードを有し、該カソードを前記ソースに機械的かつ電気的に結合するように前記III族窒化物トランジスタにスタックしたダイオードと、
前記III族窒化物トランジスタのゲート、ダイオードのアノードおよびパッケージ支持面に結合した第1の導電性クリップと、
前記III族窒化物トランジスタのドレインおよびパッケージ支持面に結合した第2の導電性クリップとを備え、
前記第1および第2の導電性クリップがそれぞれ高電圧半導体パッケージの表面実装用の平担部を有することを特徴とするワイヤーボンディングの無い表面実装性高電圧半導体パッケージ。 - 前記各平担部が実質的に同一平面上にある請求項1に記載の高電圧半導体パッケージ。
- 前記III族窒化物トランジスタおよびダイオードを封入するグロブトップをさらに含む請求項1に記載の高電圧半導体パッケージ。
- 前記グロブトップがIII族窒化物トランジスタの上縁を越えて延在する請求項3に記載の高電圧半導体パッケージ。
- 前記第1の導電性クリップを前記アノードにコイン状コネクタ、キノコ状コネクタ、くぎ頭状、ねじ頭状およびストレートコネクタよりなる群から選択したコネクタによって結合する請求項1に記載の高電圧半導体パッケージ。
- 前記第1および第2の導電性クリップが銅からなる請求項1に記載の高電圧半導体パッケージ。
- 前記パッケージ支持面がプリント回路基板(PCB)からなる請求項1に記載の高電圧半導体パッケージ。
- 前記パッケージ支持面が熱配線を含む請求項1に記載の高電圧半導体パッケージ。
- 前記ダイオードがショットキーダイオードである請求項1に記載の高電圧半導体パッケージ。
- 前記III族窒化物トランジスタがGaN FETである請求項1に記載の高電圧半導体パッケージ。
- 前記III族窒化物トランジスタがGaN HEMTである請求項1に記載の高電圧半導体パッケージ。
- ワイヤーボンディングの無い表面実装性高電圧半導体パッケージを製造する方法であって、
パッケージの支持面にゲート、ソースおよびドレインを有するIII族窒化物トランジスタを取り付ける工程と、
前記III族窒化物トランジスタのソース上にカソードおよびアノードを有するダイオードをスタックする工程と、
前記III族窒化物トランジスタのゲート、前記ダイオードのアノードおよび前記パッケージ支持面に第1の導電性クリップを結合する工程と、
前記III族窒化物トランジスタのドレインおよび前記パッケージ支持面に第2の導電性クリップを結合する工程トを備え、
前記第1および第2の導電性クリップはそれぞれは前記高電圧半導体パッケージの表面実装用の平担部を有することを特徴とする方法。 - 前記各平担部が実質的に同一平面上にある請求項12に記載の方法。
- 前記III族窒化物トランジスタおよびダイオードをグロブトップで封入する工程をさらに備える請求項12に記載の方法。
- 前記第1および第2の導電性クリップが銅からなる請求項12に記載の方法。
- 前記パッケージ支持面がプリント回路基板(PCB)からなる請求項12に記載の方法。
- 前記パッケージ支持面が熱配線を含む請求項16に記載の方法。
- 前記ダイオードのアノードへの第1の導電性クリップの接続工程が、コイン状コネクタ、キノコ状コネクタ、くぎ頭状、ねじ頭状およびストレートコネクタよりなる群から選択したコネクタによるものである請求項12に記載の方法。
- 前記ダイオードがショットキーダイオードである請求項12に記載の方法
- 前記III族窒化物トランジスタがGaN FETである請求項12に記載の方法。
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US13/364,242 | 2012-02-01 | ||
US13/364,242 US8546849B2 (en) | 2011-05-04 | 2012-02-01 | High voltage cascoded III-nitride rectifier package utilizing clips on package surface |
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US8546849B2 (en) | 2013-10-01 |
EP2521176A1 (en) | 2012-11-07 |
US8790965B2 (en) | 2014-07-29 |
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US9142503B2 (en) | 2015-09-22 |
US20140030854A1 (en) | 2014-01-30 |
US20120280247A1 (en) | 2012-11-08 |
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US20140327014A1 (en) | 2014-11-06 |
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