JP2012216767A - イオン注入方法 - Google Patents
イオン注入方法 Download PDFInfo
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- JP2012216767A JP2012216767A JP2012003960A JP2012003960A JP2012216767A JP 2012216767 A JP2012216767 A JP 2012216767A JP 2012003960 A JP2012003960 A JP 2012003960A JP 2012003960 A JP2012003960 A JP 2012003960A JP 2012216767 A JP2012216767 A JP 2012216767A
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- ion
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- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000005468 ion implantation Methods 0.000 title claims abstract description 17
- 150000002500 ions Chemical class 0.000 claims abstract description 110
- 239000002994 raw material Substances 0.000 claims abstract description 20
- 238000001819 mass spectrum Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 4
- 239000007943 implant Substances 0.000 abstract 1
- 238000010884 ion-beam technique Methods 0.000 description 22
- LPIQUOYDBNQMRZ-UHFFFAOYSA-N cyclopentene Chemical compound C1CC=CC1 LPIQUOYDBNQMRZ-UHFFFAOYSA-N 0.000 description 12
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 10
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 8
- 238000000605 extraction Methods 0.000 description 8
- RGSFGYAAUTVSQA-UHFFFAOYSA-N pentamethylene Natural products C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 8
- QWUWMCYKGHVNAV-UHFFFAOYSA-N 1,2-dihydrostilbene Chemical group C=1C=CC=CC=1CCC1=CC=CC=C1 QWUWMCYKGHVNAV-UHFFFAOYSA-N 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 7
- -1 carbon molecular ions Chemical class 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 4
- 238000009835 boiling Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 150000001793 charged compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- DMEGYFMYUHOHGS-UHFFFAOYSA-N heptamethylene Natural products C1CCCCCC1 DMEGYFMYUHOHGS-UHFFFAOYSA-N 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Physical Vapour Deposition (AREA)
Abstract
C4HX +イオン、C5HX +イオンまたはC6HX +イオン(xは1以上の整数)を生成し、ウエハに対して、効率的にイオン注入する。
【解決手段】
本発明のイオン注入方法では、CnHx(nは4≦n≦6の整数、xは1≦x≦2n+2の整数)で表されるイオン生成用原料を使用し、CmHy+イオン(mは4≦m≦6の整数、yは1≦y≦2m+2の整数)を生成する。その後、生成されたイオンをウエハに注入する。
【選択図】図2
Description
図2の説明では、イオン源チャンバー4の外側に永久磁石を配置する構成について説明したが、イオン源チャンバー4の容積が小さい場合、このような永久磁石がなくとも電子eはイオン源チャンバー4内に行き届く為、この永久磁石は特段設けておく必要はない。
2・・・ウエハ
3・・・イオンビーム
4・・・イオン源チャンバー
5・・・引出し電極系
12・・・電子銃
13・・・第一のガス供給源
14・・・第二のガス供給源
15・・・第三のガス供給源
Claims (5)
- CnHx(nは4≦n≦6の整数、xは1≦x≦2n+2の整数)で表されるイオン生成用原料を使用し、CmHy+イオン(mは4≦m≦6の整数、yは1≦y≦2m+2の整数)を生成し、ウエハに前記イオンを注入するイオン注入方法。
- 前記イオン生成用原料は、C4Hu(uは1≦u≦10の整数)、C5Hv(vは1≦v≦10の整数)またはC6Hw(wは1≦w≦10の整数)の質量スペクトルにおける相対存在量のピークが20%以上であることが望ましい。
- 前記イオン生成用原料が、C6H12であることを特徴とする請求項1または2記載のイオン注入方法。
- 前記イオン生成用原料が、C5H8であることを特徴とする請求項1または2記載のイオン注入方法。
- 前記イオン生成用原料が、C4H6であることを特徴とする請求項1または2記載のイオン注入方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012003960A JP5975418B2 (ja) | 2011-03-25 | 2012-01-12 | イオン注入方法 |
KR1020120029260A KR101371957B1 (ko) | 2011-03-25 | 2012-03-22 | 이온 주입 방법 |
US13/428,481 US8921240B2 (en) | 2011-03-25 | 2012-03-23 | Ion implantation method |
TW101110085A TWI457988B (zh) | 2011-03-25 | 2012-03-23 | 離子植入方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011068307 | 2011-03-25 | ||
JP2011068307 | 2011-03-25 | ||
JP2012003960A JP5975418B2 (ja) | 2011-03-25 | 2012-01-12 | イオン注入方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012216767A true JP2012216767A (ja) | 2012-11-08 |
JP2012216767A5 JP2012216767A5 (ja) | 2015-02-19 |
JP5975418B2 JP5975418B2 (ja) | 2016-08-23 |
Family
ID=46877709
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012003960A Active JP5975418B2 (ja) | 2011-03-25 | 2012-01-12 | イオン注入方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8921240B2 (ja) |
JP (1) | JP5975418B2 (ja) |
KR (1) | KR101371957B1 (ja) |
TW (1) | TWI457988B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019091923A (ja) * | 2019-02-07 | 2019-06-13 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | 基板を表面処理するための方法及び装置 |
US11348825B2 (en) | 2014-06-24 | 2022-05-31 | Ev Group E. Thallner Gmbh | Method and device for surface treatment of substrates |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009518869A (ja) * | 2005-12-09 | 2009-05-07 | セムイクウィップ・インコーポレーテッド | 炭素クラスターの注入により半導体デバイスを製造するためのシステムおよび方法 |
JP2010062529A (ja) * | 2008-08-04 | 2010-03-18 | Toshiba Corp | 半導体装置の製造方法 |
WO2010110305A1 (ja) * | 2009-03-26 | 2010-09-30 | リンテック株式会社 | 成形体、その製造方法、電子デバイス用部材及び電子デバイス |
US8343860B1 (en) * | 2010-03-23 | 2013-01-01 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | High C content molecules for C implant |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4096373B2 (ja) * | 1997-03-25 | 2008-06-04 | 住友電気工業株式会社 | 硬質被膜とその製造方法 |
US7465478B2 (en) | 2000-08-11 | 2008-12-16 | Applied Materials, Inc. | Plasma immersion ion implantation process |
US6686595B2 (en) | 2002-06-26 | 2004-02-03 | Semequip Inc. | Electron impact ion source |
US7312162B2 (en) * | 2005-05-17 | 2007-12-25 | Applied Materials, Inc. | Low temperature plasma deposition process for carbon layer deposition |
US8183161B2 (en) * | 2006-09-12 | 2012-05-22 | Tokyo Electron Limited | Method and system for dry etching a hafnium containing material |
US8992785B2 (en) * | 2010-01-15 | 2015-03-31 | Tel Epion Inc. | Method for modifying an etch rate of a material layer using energetic charged particles |
-
2012
- 2012-01-12 JP JP2012003960A patent/JP5975418B2/ja active Active
- 2012-03-22 KR KR1020120029260A patent/KR101371957B1/ko active IP Right Grant
- 2012-03-23 US US13/428,481 patent/US8921240B2/en not_active Expired - Fee Related
- 2012-03-23 TW TW101110085A patent/TWI457988B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009518869A (ja) * | 2005-12-09 | 2009-05-07 | セムイクウィップ・インコーポレーテッド | 炭素クラスターの注入により半導体デバイスを製造するためのシステムおよび方法 |
JP2010062529A (ja) * | 2008-08-04 | 2010-03-18 | Toshiba Corp | 半導体装置の製造方法 |
WO2010110305A1 (ja) * | 2009-03-26 | 2010-09-30 | リンテック株式会社 | 成形体、その製造方法、電子デバイス用部材及び電子デバイス |
US8343860B1 (en) * | 2010-03-23 | 2013-01-01 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | High C content molecules for C implant |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11348825B2 (en) | 2014-06-24 | 2022-05-31 | Ev Group E. Thallner Gmbh | Method and device for surface treatment of substrates |
US11776842B2 (en) | 2014-06-24 | 2023-10-03 | Ev Group E. Thallner Gmbh | Method and device for surface treatment of substrates |
JP2019091923A (ja) * | 2019-02-07 | 2019-06-13 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | 基板を表面処理するための方法及び装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20120109356A (ko) | 2012-10-08 |
US20120244724A1 (en) | 2012-09-27 |
TWI457988B (zh) | 2014-10-21 |
TW201239957A (en) | 2012-10-01 |
KR101371957B1 (ko) | 2014-03-07 |
JP5975418B2 (ja) | 2016-08-23 |
US8921240B2 (en) | 2014-12-30 |
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