JP2012186450A - Ledモジュール - Google Patents
Ledモジュール Download PDFInfo
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- JP2012186450A JP2012186450A JP2012008741A JP2012008741A JP2012186450A JP 2012186450 A JP2012186450 A JP 2012186450A JP 2012008741 A JP2012008741 A JP 2012008741A JP 2012008741 A JP2012008741 A JP 2012008741A JP 2012186450 A JP2012186450 A JP 2012186450A
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- 239000000758 substrate Substances 0.000 claims abstract description 98
- 229920005989 resin Polymers 0.000 claims abstract description 93
- 239000011347 resin Substances 0.000 claims abstract description 93
- 238000007789 sealing Methods 0.000 claims abstract description 86
- 239000002184 metal Substances 0.000 claims abstract description 84
- 229910052751 metal Inorganic materials 0.000 claims abstract description 84
- 239000011248 coating agent Substances 0.000 claims abstract description 6
- 238000000576 coating method Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 238000007747 plating Methods 0.000 claims description 6
- 239000003822 epoxy resin Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- 238000001721 transfer moulding Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2924/0001—Technical content checked by a classifier
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- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- Engineering & Computer Science (AREA)
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- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Abstract
【解決手段】 本発明のLEDモジュールA1は、基板1と、基板1に支持されるLEDチップ3と、基板1に設置され、LEDチップ3が搭載される搭載部212を有する金属配線2と、LEDチップ3および金属配線2を覆う封止樹脂4と、搭載部212を露出させるように金属配線2を覆う被覆部材6とを備えており、封止樹脂4は被覆部材6を覆っている。
【選択図】 図2
Description
x (第1の)方向
y (第2の)方向
z (厚み)方向
1 基板
1a 凹部
2 金属配線
21 (第1の)金属電極
22 (第2の)金属電極
211 細帯部
212 搭載部
221 細帯部
3 LEDチップ
4 封止樹脂
41,42 側面
43,44 曲面
5 ワイヤ
6 被覆部材
61 第1の被覆部材
62 第2の被覆部材
63 開口部
64 凹部
67 開口部
Claims (24)
- 基板と、
上記基板に支持されるLEDチップと、
上記基板に設置され、上記LEDチップが搭載される搭載部を有する金属配線と、
上記LEDチップおよび上記金属配線を覆う封止樹脂と、
を備えたLEDモジュールであって、
上記搭載部を露出させるように上記金属配線を覆う被覆部材を備えており、
上記封止樹脂は上記被覆部材を覆っていることを特徴とする、LEDモジュール。 - 上記被覆部材は、上記基板の厚み方向視において、上記LEDチップを囲むように形成された開口部を有している、請求項1に記載のLEDモジュール。
- 上記搭載部は、上記基板の厚み方向視において矩形状であり、
上記開口部は、上記基板の厚み方向視において円形である、請求項2に記載のLEDモジュール。 - 上記被覆部材が、上記搭載部の一部を覆っている、請求項3に記載のLEDモジュール。
- 上記金属配線は、上記搭載部と離間するワイヤボンディング部を有しており、
上記LEDチップと上記ワイヤボンディング部とを接続するワイヤを備えており、
上記被覆部材は、上記ワイヤボンディング部を露出させるように上記金属配線を覆っている、請求項1ないし4のいずれかに記載のLEDモジュール。 - 上記被覆部材は、上記ワイヤが延びる方向において上記搭載部に近付くように凹む凹部を有しており、
上記基板の厚み方向視において上記凹部は上記ワイヤボンディング部と重なる位置に設けられている、請求項5に記載のLEDモジュール。 - 上記金属配線は、上記搭載部を含む第1の金属端子と、上記ワイヤボンディング部を含む第2の金属端子とを備えており、
上記第1の金属端子は、第1の方向における上記基板の一方の端縁を覆うように形成されており、
上記第2の金属端子は、上記第1の方向における上記基板の他方の端縁を覆うように形成されており、
上記封止樹脂は、上記第1の方向において上記基板よりも短くなっている、請求項5または6に記載のLEDモジュール。 - 上記基板は上記第1の方向の両端に上記第1の方向に凹む1対の凹部を有しており、
上記金属配線は上記1対の凹部を覆っており、
上記封止樹脂は、上記1対の凹部を露出させるように形成されている、請求項7に記載のLEDモジュール。 - 上記第1の方向における上記被覆部材の一方の端縁と、上記封止樹脂の一方の端縁とが上記第1の方向において同一の位置にある、請求項7または8に記載のLEDモジュール。
- 上記第1の方向における上記被覆部材の一方の端縁は、上記封止樹脂の一方の端縁よりも上記第1の方向における一方側に位置している、請求項7または8に記載のLEDモジュール。
- 上記第1の方向における上記被覆部材の他方の端縁と、上記封止樹脂の他方の端縁とが上記第1の方向において同一の位置にある、請求項9または10に記載のLEDモジュール。
- 上記第1の方向における上記被覆部材の他方の端縁は、上記封止樹脂の他方の端縁よりも上記第1の方向における他方側に位置している、請求項9または10に記載のLEDモジュール。
- 上記封止樹脂は上記第1の方向と直交する第2の方向において上記基板の全幅を覆うように形成されており、
上記被覆部材の上記第2の方向における両端は上記基板の第2の方向における両端と上記第2の方向において同一の位置にある、請求項7ないし12のいずれかに記載のLEDモジュール。 - 上記基板は第1の方向において上記封止樹脂よりも長く形成されており、
上記封止樹脂の上記第1の方向における一方の側面は、上記基板の厚み方向において上記基板から遠い位置ほど上記第1の方向における他方側に位置するように傾斜している、請求項1ないし12のいずれかに記載のLEDモジュール。 - 上記一方の側面は、上記基板の厚み方向に対して6°以上傾斜する斜面を含む、請求項14に記載のLEDモジュール。
- 上記一方の側面は、上記封止樹脂の上記厚み方向において上記基板から遠い方の端面と連結される曲面を有している、請求項13または14に記載のLEDモジュール。
- 上記封止樹脂の上記第1の方向における他方の側面は、上記基板の厚み方向において上記基板から遠い位置ほど上記第1の方向における一方側に位置するように傾斜している、請求項14ないし16のいずれかに記載のLEDモジュール。
- 上記他方の側面は、上記基板の厚み方向に対して6°以上傾斜する斜面を含む、請求項17に記載のLEDモジュール。
- 上記他方の側面は、上記封止樹脂の上記厚み方向において上記基板から遠い方の端面と連結される曲面を有している、請求項17または18に記載のLEDモジュール。
- 上記被覆部材は、上記被覆部材と上記金属配線との密着強度および上記被覆部材と上記封止樹脂との密着強度が、上記金属配線と上記封止樹脂との密着強度よりも強くなる材質からなる、請求項1ないし19のいずれかに記載のLEDモジュール。
- 上記金属配線は、金製のメッキ層を有している、請求項1ないし20のいずれかに記載のLEDモジュール。
- 上記被覆部材は、樹脂製である、請求項21に記載のLEDモジュール。
- 上記被覆部材は、白色である、請求項22に記載のLEDモジュール。
- 上記被覆部材は、上記基板の厚み方向において1μm以上10μm以下の厚みを有する、請求項1ないし23のいずれかに記載のLEDモジュール。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012008741A JP2012186450A (ja) | 2011-02-16 | 2012-01-19 | Ledモジュール |
US13/397,110 US8723215B2 (en) | 2011-02-16 | 2012-02-15 | LED module |
CN201210035595.5A CN102683509B (zh) | 2011-02-16 | 2012-02-16 | Led模块 |
US14/230,631 US8994062B2 (en) | 2011-02-16 | 2014-03-31 | LED module |
US14/639,618 US9379290B2 (en) | 2011-02-16 | 2015-03-05 | LED module |
US15/169,026 US9640744B2 (en) | 2011-02-16 | 2016-05-31 | LED module |
US15/465,841 US10103304B2 (en) | 2011-02-16 | 2017-03-22 | LED module |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011030331 | 2011-02-16 | ||
JP2011030331 | 2011-02-16 | ||
JP2012008741A JP2012186450A (ja) | 2011-02-16 | 2012-01-19 | Ledモジュール |
Related Child Applications (1)
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JP2016159904A Division JP6262816B2 (ja) | 2011-02-16 | 2016-08-17 | Ledモジュール |
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JP2012186450A true JP2012186450A (ja) | 2012-09-27 |
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JP2012008741A Pending JP2012186450A (ja) | 2011-02-16 | 2012-01-19 | Ledモジュール |
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US (5) | US8723215B2 (ja) |
JP (1) | JP2012186450A (ja) |
CN (1) | CN102683509B (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014093311A (ja) * | 2012-10-31 | 2014-05-19 | Nichia Chem Ind Ltd | 発光装置およびその製造方法 |
JP2016004946A (ja) * | 2014-06-18 | 2016-01-12 | ローム株式会社 | 光学装置、光学装置の実装構造、光学装置の製造方法 |
US9537019B2 (en) | 2013-12-11 | 2017-01-03 | Rohm Co., Ltd. | Semiconductor device |
JP2017175024A (ja) * | 2016-03-24 | 2017-09-28 | パナソニックIpマネジメント株式会社 | 発光モジュール及び照明装置 |
JP2018010949A (ja) * | 2016-07-13 | 2018-01-18 | ローム株式会社 | 半導体発光装置および半導体発光装置の製造方法 |
JP2018085515A (ja) * | 2016-11-25 | 2018-05-31 | エルジー イノテック カンパニー リミテッド | 半導体素子パッケージ{semiconductor device package} |
JP2018160635A (ja) * | 2017-03-23 | 2018-10-11 | ローム株式会社 | 半導体発光装置 |
JP2018207063A (ja) * | 2017-06-09 | 2018-12-27 | ローム株式会社 | 光学装置 |
JP2022180523A (ja) * | 2017-08-25 | 2022-12-06 | ローム株式会社 | 半導体装置 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2012186450A (ja) | 2011-02-16 | 2012-09-27 | Rohm Co Ltd | Ledモジュール |
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Also Published As
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US8723215B2 (en) | 2014-05-13 |
US8994062B2 (en) | 2015-03-31 |
US20150179898A1 (en) | 2015-06-25 |
US20140209964A1 (en) | 2014-07-31 |
US9640744B2 (en) | 2017-05-02 |
US20170194543A1 (en) | 2017-07-06 |
CN102683509B (zh) | 2017-04-12 |
CN102683509A (zh) | 2012-09-19 |
US10103304B2 (en) | 2018-10-16 |
US20160300990A1 (en) | 2016-10-13 |
US20120205710A1 (en) | 2012-08-16 |
US9379290B2 (en) | 2016-06-28 |
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