JP2012151499A - 発光ダイオード - Google Patents
発光ダイオード Download PDFInfo
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- JP2012151499A JP2012151499A JP2012081690A JP2012081690A JP2012151499A JP 2012151499 A JP2012151499 A JP 2012151499A JP 2012081690 A JP2012081690 A JP 2012081690A JP 2012081690 A JP2012081690 A JP 2012081690A JP 2012151499 A JP2012151499 A JP 2012151499A
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- emitting diode
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- 239000000758 substrate Substances 0.000 claims abstract description 33
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 41
- 229920005989 resin Polymers 0.000 claims description 15
- 239000011347 resin Substances 0.000 claims description 15
- 230000002093 peripheral effect Effects 0.000 claims description 13
- 238000005192 partition Methods 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 claims 1
- 239000002893 slag Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 238000007796 conventional method Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000000565 sealant Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 230000005484 gravity Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
【解決手段】発光ダイオードは、基板と、基板の第1表面に配置された発光ダイオードチップと、基板を取り囲む筺体と、筐体上に配置され、発光ダイオードチップと電気的に接続されるリード端子235と、発光ダイオードチップ上に配置され、蛍光体250を含む第1モールド部260と、を備え、リード端子235は筺体の外側から表出した階段を有し、筺体の内側壁及び上面には少なくとも1以上の凹溝を有する。
【選択図】図6
Description
さらに色ムラ(color speckle)が発生するので、均一な色を実現するためには多量の蛍光体を含ませなければならず、これは発光効率の低下を来たしていた。また、蛍光体がモールド部中に均一に分布されないため、発光ダイオードを眺める角度に依存して発せられる光の色が異なってくるという不都合がある。
また好ましくは、フレームの周縁に沿って所定の深さの凹溝を形成する。
図1及び図2は、従来の技術により蛍光体が塗布された発光ダイオードの概略断面図である。
220、320 発光ダイオードチップ、
230、235、330、335 リード端子、
240、340 反射部、
250、350 蛍光体、
260、360 モールド部、
265、365 外周モールド部、
270、370 ワイヤ、
280 筐体、
290、390 フレーム
297 隔壁
299 溝
Claims (16)
- 基板と、
前記基板の第1表面に配置された発光ダイオードチップと、
前記基板を取り囲む筺体と、
前記筐体上に配置され、前記発光ダイオードチップと電気的に接続されるリード端子と、
前記発光ダイオードチップ上に配置され、蛍光体を含む第1モールド部と、
を備え、
前記リード端子は前記筺体の外側から表出した階段を有し、
前記筺体の内側壁及び上面には少なくとも1以上の凹溝を有することを特徴とする発光ダイオード。 - 前記基板の前記第1表面の反対にある第2表面が外部に露出していることを特徴とする請求項1に記載の発光ダイオード。
- 前記リード端子は、前記筺体の内側壁に第1表面、前記筺体の外側壁の外部に露出した第2表面、並びに前記第1表面及び前記第2表面と接続した第3表面を有し、
前記基板の前記第2表面と同一面に前記リード端子の前記第2表面が位置していることを特徴とする請求項2に記載の発光ダイオード。 - 前記基板はメタルスラグ又は熱伝導性樹脂を含むことを特徴とする請求項1に記載の発光ダイオード。
- 第1モールド部及び前記基板上に第2モールド部をさらに備えることを特徴とする請求項1に記載の発光ダイオード。
- 前記第2モールド部の外側壁に前記凹溝を有することを特徴とする請求項5に記載の発光ダイオード。
- 前記基板と前記発光ダイオードチップとの間にフレームをさらに備えることを特徴とする請求項1に記載の発光ダイオード。
- 前記フレームの周縁に、前記フレームより高い隔壁をさらに備えることを特徴とする請求項7に記載の発光ダイオード。
- 前記隔壁は、前記発光ダイオードチップから一定の間隔を有することを特徴とする請求項8に記載の発光ダイオード。
- 前記隔壁は、前記フレームと一体に形成されていることを特徴とする請求項9に記載の発光ダイオード。
- 前記フレームの周縁の一部に凹溝をさらに有することを特徴とする請求項9に記載の発光ダイオード。
- 前記凹溝は、前記発光ダイオードチップから一定の間隔を有することを特徴とする請求項11に記載の発光ダイオード。
- 前記隔壁は、前記基板と一体に形成されていることを特徴とする請求項7に記載の発光ダイオード。
- 前記第1モールド部が前記フレーム及び前記発光ダイオードチップに直接配置されていることを特徴とする請求項7に記載の発光ダイオード。
- 前記フレームの周縁に、前記フレームより高い隔壁をさらに備えることを特徴とする請求項14に記載の発光ダイオード。
- 第1モールド部の外側壁、隔壁の外側面およびフレームの外側壁は互いに実質的に同一平面にあることを特徴とする請求項15に記載の発光ダイオード。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050059736A KR101161383B1 (ko) | 2005-07-04 | 2005-07-04 | 발광 다이오드 및 이를 제조하기 위한 방법 |
KR10-2005-0059736 | 2005-07-04 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008519157A Division JP5947478B2 (ja) | 2005-07-04 | 2005-11-09 | 発光ダイオード及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2012151499A true JP2012151499A (ja) | 2012-08-09 |
Family
ID=37604615
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008519157A Expired - Fee Related JP5947478B2 (ja) | 2005-07-04 | 2005-11-09 | 発光ダイオード及びその製造方法 |
JP2012081690A Withdrawn JP2012151499A (ja) | 2005-07-04 | 2012-03-30 | 発光ダイオード |
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Application Number | Title | Priority Date | Filing Date |
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JP2008519157A Expired - Fee Related JP5947478B2 (ja) | 2005-07-04 | 2005-11-09 | 発光ダイオード及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US8058662B2 (ja) |
EP (1) | EP1900040B1 (ja) |
JP (2) | JP5947478B2 (ja) |
KR (1) | KR101161383B1 (ja) |
WO (1) | WO2007004775A1 (ja) |
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TWI321857B (en) * | 2006-07-21 | 2010-03-11 | Epistar Corp | A light emitting device |
TWI418054B (zh) * | 2006-08-08 | 2013-12-01 | Lg Electronics Inc | 發光裝置封裝與製造此封裝之方法 |
WO2009105334A1 (en) * | 2008-02-22 | 2009-08-27 | Illinois Tool Works Inc. | Surface mount led and holder |
TWI403005B (zh) * | 2009-10-12 | 2013-07-21 | Intematix Technology Ct Corp | 發光二極體及其製作方法 |
KR101114794B1 (ko) * | 2009-10-26 | 2012-03-09 | 엘지이노텍 주식회사 | 발광소자 패키지 및 그 제조방법 |
TW201115779A (en) * | 2009-10-26 | 2011-05-01 | Gio Optoelectronics Corp | Light emitting apparatus |
EP2378576A2 (en) * | 2010-04-15 | 2011-10-19 | Samsung LED Co., Ltd. | Light emitting diode package, lighting apparatus having the same, and method for manufacturing light emitting diode package |
US8330178B2 (en) | 2010-05-11 | 2012-12-11 | Advanced Semiconductor Engineering, Inc. | Package structure and package process of light emitting diode |
JP2012044034A (ja) * | 2010-08-20 | 2012-03-01 | Stanley Electric Co Ltd | 半導体発光装置および半導体発光装置の製造方法 |
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US9653656B2 (en) * | 2012-03-16 | 2017-05-16 | Advanced Semiconductor Engineering, Inc. | LED packages and related methods |
US8637887B2 (en) | 2012-05-08 | 2014-01-28 | Advanced Semiconductor Engineering, Inc. | Thermally enhanced semiconductor packages and related methods |
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KR101353392B1 (ko) * | 2013-02-07 | 2014-01-21 | (주)포인트엔지니어링 | 광 디바이스 및 그 제조방법 |
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JP2015097260A (ja) | 2013-10-09 | 2015-05-21 | パナソニックIpマネジメント株式会社 | 照明装置 |
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Also Published As
Publication number | Publication date |
---|---|
KR101161383B1 (ko) | 2012-07-02 |
US20080217637A1 (en) | 2008-09-11 |
EP1900040B1 (en) | 2017-05-03 |
US8058662B2 (en) | 2011-11-15 |
US8809892B2 (en) | 2014-08-19 |
KR20070004267A (ko) | 2007-01-09 |
JP2008544568A (ja) | 2008-12-04 |
US20110227123A1 (en) | 2011-09-22 |
JP5947478B2 (ja) | 2016-07-06 |
EP1900040A4 (en) | 2011-01-19 |
EP1900040A1 (en) | 2008-03-19 |
WO2007004775A1 (en) | 2007-01-11 |
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