JP2012129521A - 半導体構造同士を直接結合する方法、およびこの方法を使用して形成された結合された半導体構造 - Google Patents
半導体構造同士を直接結合する方法、およびこの方法を使用して形成された結合された半導体構造 Download PDFInfo
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- JP2012129521A JP2012129521A JP2011260461A JP2011260461A JP2012129521A JP 2012129521 A JP2012129521 A JP 2012129521A JP 2011260461 A JP2011260461 A JP 2011260461A JP 2011260461 A JP2011260461 A JP 2011260461A JP 2012129521 A JP2012129521 A JP 2012129521A
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- semiconductor structure
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Abstract
【解決手段】本発明の実施形態は、半導体構造同士を直接結合する方法を含む。いくつかの実施形態では、半導体構造の直接結合された金属フィーチャ間の境界面に、キャップ層を提供することができる。いくつかの実施形態では、半導体構造の直接結合された金属フィーチャ内に、不純物が提供される。そのような方法を使用して、結合された半導体構造が形成される。
【選択図】図1G
Description
Claims (25)
- 第1の半導体構造を第2の半導体構造へ直接結合する方法であって、
前記第1の半導体構造上の第1の金属フィーチャの表面に、金属およびケイ素を含むキャップ層を形成するステップであり、前記キャップ層の表面は、前記第1の金属フィーチャの第1の結合表面を画定する、ステップと、
前記第2の半導体構造上の第2の金属フィーチャの第2の結合表面を前記第1の半導体構造上の前記第1の金属フィーチャの前記第1の結合表面へ直接結合するステップと
を含むことを特徴とする方法。 - 銅を含むように前記第1の金属フィーチャを形成するステップをさらに含むことを特徴とする請求項1に記載の方法。
- 金属およびケイ素を含む前記キャップ層を形成するステップは、金属ケイ化物を形成するステップを含むことを特徴とする請求項1に記載の方法。
- 金属およびケイ素を含む前記キャップ層を形成するステップは、金属およびケイ素および窒素を含むキャップ層を形成するステップを含むことを特徴とする請求項1に記載の方法。
- 第1の寸法を有するように前記第1の結合表面を形成するステップと、
前記第1の結合表面の前記第1の寸法とは異なる第2の寸法を有するように前記第2の結合表面を形成するステップと
をさらに含むことを特徴とする請求項1に記載の方法。 - 第1の形状を有するように前記第1の結合表面を形成するステップと、
前記第1の結合表面の前記第1の形状とは異なる第2の形状を有するように前記第2の結合表面を形成するステップと
をさらに含むことを特徴とする請求項1に記載の方法。 - 前記第2の結合表面を前記第1の結合表面へ直接結合するステップは、超低温直接結合プロセスを含むことを特徴とする請求項1に記載の方法。
- 前記第2の結合表面を前記第1の結合表面へ直接結合するステップは、約摂氏200度(200℃)未満の温度の環境で、前記第1の結合表面を前記第2の結合表面に直接当接させるステップを含むことを特徴とする請求項1に記載の方法。
- 約摂氏200度(200℃)未満の温度の環境で、前記第1の結合表面と前記第2の結合表面の間に圧力をかけるステップをさらに含むことを特徴とする請求項8に記載の方法。
- 約摂氏200度(200℃)未満の温度の環境で、前記第1の結合表面と前記第2の結合表面の間に圧力をかけるステップは、約摂氏100度(100℃)未満の温度の環境で、前記第1の結合表面と前記第2の結合表面の間に圧力をかけるステップを含むことを特徴とする請求項9に記載の方法。
- 約摂氏100度(100℃)未満の温度の環境で、前記第1の結合表面と前記第2の結合表面の間に圧力をかけるステップは、ほぼ室温の環境で、前記第1の結合表面と前記第2の結合表面の間に圧力をかけるステップを含むことを特徴とする請求項10に記載の方法。
- 前記第2の結合表面を前記第1の結合表面へ直接結合する前に、前記第1の半導体構造上の前記第1の金属フィーチャを不純物でドープするステップをさらに含むことを特徴とする請求項1に記載の方法。
- 前記第2の結合表面を前記第1の結合表面へ直接結合する前に、前記第2の半導体構造上の前記第2の金属フィーチャの表面に金属およびケイ素を含むキャップ層を形成するステップであって、前記第2の金属フィーチャの前記表面にある前記キャップ層の表面は、前記第2の金属フィーチャの前記第2の結合表面を画定する、ステップをさらに含むことを特徴とする請求項1に記載の方法。
- CoWPを含むように前記金属キャップ層を形成するステップをさらに含むことを特徴とする請求項1に記載の方法。
- 約10ナノメートル(10nm)以下の平均厚さを有するように前記金属キャップ層を形成するステップをさらに含むことを特徴とする請求項1に記載の方法。
- アルミニウム、銀、およびマンガンの少なくとも1つを含むように前記不純物を選択するステップをさらに含むことを特徴とする請求項14に記載の方法。
- 前記第1の金属フィーチャをドープするステップは、
前記不純物を含む金属シード層を形成するステップと、
前記シード層を覆って前記第1の金属フィーチャを形成し、前記不純物を前記シード層から前記第1の金属フィーチャ内へ拡散させるステップと
を含むことを特徴とする請求項14に記載の方法。 - 第1の主表面を含む第1の金属フィーチャを含む第1の半導体構造と、
誘電体材料によって少なくとも部分的に取り囲まれた第2の金属フィーチャを含む第2の半導体構造であって、前記第2の半導体構造の前記第2の金属フィーチャは、前記第1の半導体構造の前記第1の金属フィーチャの前記第1の主表面の一部分へ直接結合された第2の主表面を有する、第2の半導体構造と、
前記誘電体材料の表面と前記第1の半導体構造の前記第1の金属フィーチャの前記第1の主表面の別の部分の間に直接配置されたキャップ材料と
を含むことを特徴とする結合された半導体構造。 - 前記キャップ材料は誘電体材料を含むことを特徴とする請求項18に記載の結合された半導体構造。
- 前記キャップ材料は、CuSiN、SiC、およびSiNの少なくとも1つを含むことを特徴とする請求項19に記載の結合された半導体構造。
- 前記キャップ材料は伝導材料を含むことを特徴とする請求項18に記載の結合された半導体構造。
- 前記キャップ材料はCoWPを含むことを特徴とする請求項21に記載の結合された半導体構造。
- 前記第1の金属フィーチャおよび前記第2の金属フィーチャの少なくとも1つは銅を含むことを特徴とする請求項18に記載の結合された半導体構造。
- 前記第1の金属フィーチャは、前記第1の金属フィーチャと前記第2の金属フィーチャの間の結合境界面に対して平行な平面で第1の断面積を有し、
前記第2の金属フィーチャは、前記第1の金属フィーチャと前記第2の金属フィーチャの間の前記結合境界面に対して平行な平面で第2の断面積を有し、前記第2の断面積は、前記第1の断面積とは異なる
ことを特徴とする請求項18に記載の結合された半導体構造。 - 前記第1の金属フィーチャは、前記第1の金属フィーチャと前記第2の金属フィーチャの間の結合境界面に対して平行な平面で第1の断面形状を有し、
前記第2の金属フィーチャは、前記第1の金属フィーチャと前記第2の金属フィーチャの間の前記結合境界面に対して平行な平面で第2の断面形状を有し、前記第2の断面形状は、前記第1の断面形状とは異なる
ことを特徴とする請求項18に記載の結合された半導体構造。
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US12/970,422 | 2010-12-16 | ||
US12/970,422 US8778773B2 (en) | 2010-12-16 | 2010-12-16 | Methods for directly bonding together semiconductor structures, and bonded semiconductor structures formed using such methods |
FR1061166 | 2010-12-23 | ||
FR1061166A FR2969814A1 (fr) | 2010-12-23 | 2010-12-23 | Procédés pour lier directement les unes aux autres des structures semi-conductrices, et structures semi-conductrices liées formées en utilisant ces procédés |
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JP6282342B2 (ja) * | 2013-07-05 | 2018-02-21 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | 接触面の少なくとも一方において、接触面の一方に施与された犠牲層を溶解させながら金属接触面を接合する方法 |
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KR102512017B1 (ko) * | 2016-10-07 | 2023-03-17 | 엑셀시스 코포레이션 | 직접-접합된 네이티브 상호접속부 및 능동 베이스 다이 |
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SG182043A1 (en) | 2012-07-30 |
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