JP2012119590A - Electrode plate for plasma processing apparatus - Google Patents

Electrode plate for plasma processing apparatus Download PDF

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JP2012119590A
JP2012119590A JP2010269813A JP2010269813A JP2012119590A JP 2012119590 A JP2012119590 A JP 2012119590A JP 2010269813 A JP2010269813 A JP 2010269813A JP 2010269813 A JP2010269813 A JP 2010269813A JP 2012119590 A JP2012119590 A JP 2012119590A
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electrode plate
hole
plasma
hole portion
plasma processing
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Atsushi Matsuda
厚 松田
Takashi Yonehisa
孝志 米久
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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Abstract

PROBLEM TO BE SOLVED: To provide an electrode plate for a plasma processing apparatus which can prevent damage to a cooling plate by preventing a back flow of plasma, thereby exhibiting plasma processing with in-plane uniformity to a processed substrate.SOLUTION: The electrode plate for a plasma processing apparatus comprises: a first hole 11a formed halfway in the thickness direction from a discharge surface 3a of an electrode plate 3; and a second hole 11b formed halfway in the thickness direction along a shaft core c2 parallel to a shaft core c1 of the first hole 11a from a surface 3b opposite to the discharge surface 3a. The first hole 11a and the second hole 11b communicate each other forming a plurality of air holes 11, and an orifice 21 having an aperture area not larger than that of the first hole 11a is provided between the first hole 11a and the second hole 11b.

Description

本発明は、プラズマ処理装置においてプラズマ生成用ガスを厚さ方向に通過させながら放電するプラズマ処理装置用電極板に関する。   The present invention relates to an electrode plate for a plasma processing apparatus that discharges a plasma generating gas while passing it in the thickness direction in the plasma processing apparatus.

半導体デバイス製造プロセスに使用されるプラズマエッチング装置やプラズマＣＶＤ装置等のプラズマ処理装置は、チャンバー内に、高周波電源に接続される上部電極と下部電極とを、例えば、上下方向に対向配置し、下部電極の上に被処理基板を配置した状態として、上部電極に形成した通気孔からエッチングガスを被処理基板に向かって流通させながら高周波電圧を印加することによりプラズマを発生させ、被処理基板にエッチング等の処理を行う構成とされている。   A plasma processing apparatus such as a plasma etching apparatus or a plasma CVD apparatus used in a semiconductor device manufacturing process has, for example, an upper electrode and a lower electrode connected to a high-frequency power source disposed in a chamber facing each other in the vertical direction, With the substrate to be processed disposed on the electrode, plasma is generated by applying a high-frequency voltage while etching gas is circulated from the air hole formed in the upper electrode toward the substrate to be processed, and etching is performed on the substrate to be processed. And the like.

このプラズマ処理装置で使用される上部電極として、一般に、シリコン製の電極板を冷却板に固定し重ね合わせた積層電極板が用いられており、プラズマ処理中に上昇する電極板の熱は、冷却板を通して放熱されるように構成されている。
また、電極板に設けられる通気孔は、通常は、その厚さ方向に平行に形成されているが（特許文献１参照）、プラズマ処理を繰り返し行うことにより、プラズマにさらされる部分が削られて消耗するため、通気孔の径が大きく変化する。特に通気孔のプラズマ発生領域側の被処理基板に対向する開口部は、ラッパ状に拡大するように削られる。これに伴って、プラズマの一部がエッチングガスの流れに逆らって逆流し、通気孔から電極板の背面に向けてプラズマが入り込むと、冷却板の一部がスパッタされて、被処理基板が汚染されるおそれがある。 As the upper electrode used in this plasma processing apparatus, a laminated electrode plate is generally used in which a silicon electrode plate is fixed to a cooling plate and overlapped, and the heat of the electrode plate rising during the plasma processing is cooled. It is configured to dissipate heat through the plate.
In addition, the air holes provided in the electrode plate are usually formed in parallel with the thickness direction (see Patent Document 1), but the portion exposed to the plasma is scraped by repeatedly performing the plasma treatment. Since it is consumed, the diameter of the vent hole changes greatly. In particular, the opening facing the substrate to be processed on the plasma generation region side of the vent hole is cut so as to expand in a trumpet shape. Along with this, a part of the plasma flows back against the flow of the etching gas, and when the plasma enters from the vent hole toward the back surface of the electrode plate, a part of the cooling plate is sputtered and the substrate to be processed is contaminated. There is a risk of being.

そこで、プラズマが冷却板に到達することを阻止し、冷却板の損傷及び被処理基板の汚染を防ぐため、特許文献２には、電極板の厚さ方向に平行に形成された垂直細孔と、厚さ方向に対して傾斜して形成された傾斜細孔とからなる通気孔を形成した電極板、さらに、電極板の厚さ方向に対してそれぞれ異なる傾斜を有する傾斜細孔を接続して形成された、くの字型の通気孔を有する電極板が提案されている。また、特許文献３には、垂直細孔と傾斜細孔との接続部よりも垂直細孔の先端を延長した通気孔を有する電極板が提案されている。   Therefore, in order to prevent the plasma from reaching the cooling plate and prevent damage to the cooling plate and contamination of the substrate to be processed, Patent Document 2 discloses vertical pores formed parallel to the thickness direction of the electrode plate. An electrode plate having vent holes formed with inclined pores formed to be inclined with respect to the thickness direction, and further connecting inclined pores having different inclinations with respect to the thickness direction of the electrode plate. There has been proposed an electrode plate having a V-shaped vent. Patent Document 3 proposes an electrode plate having a ventilation hole in which the tip of the vertical pore is extended from the connection portion between the vertical pore and the inclined pore.

特開２００３−２８９０６４号公報JP 2003-289064 A 特開２００２−２４６３７１号公報JP 2002-246371 A 特開２００８−６０１９７号公報JP 2008-60197 A

しかしながら、特許文献２及び特許文献３のように、電極板の厚さ方向に対して傾斜する傾斜細孔は接合部を合わせることが難しいため、電極板に複数設けられる通気孔の接合部の形状が不均一になる場合がある。通気孔の接合部が不均一に形成された場合、エッチングガスの流れが不均一となり、被処理基板の場所によってエッチング深さがばらつき、被処理基板全体に均一なエッチング処理ができなくなるおそれがある。   However, as in Patent Document 2 and Patent Document 3, inclined pores that are inclined with respect to the thickness direction of the electrode plate are difficult to match the joints, so the shape of the joints of a plurality of vent holes provided in the electrode plate May become uneven. If the joints of the air holes are formed unevenly, the flow of the etching gas becomes non-uniform, the etching depth varies depending on the location of the substrate to be processed, and there is a possibility that uniform etching processing cannot be performed on the entire substrate to be processed. .

本発明は、このような事情に鑑みてなされたものであって、プラズマの逆流を防止して冷却板の損傷を防ぐことができ、被処理基板に面内均一なプラズマ処理を行わせることができるプラズマ処理装置用電極板を提供する。   The present invention has been made in view of such circumstances, and it is possible to prevent the reverse flow of the plasma and prevent the cooling plate from being damaged, and to perform the in-plane uniform plasma processing on the substrate to be processed. An electrode plate for a plasma processing apparatus is provided.

本発明の電極板は、電極板の放電面から厚さ方向途中まで形成された第１穴部と、前記放電面とは反対面から前記第１穴部の軸芯と平行な軸芯に沿って厚さ方向途中まで形成された第２穴部とが、互いに連通して形成される複数の通気孔を有するとともに、前記第１穴部と前記第２穴部との間に前記第１穴部の開口面積以下の開口面積を有するオリフィスが設けられていることを特徴とする。   The electrode plate of the present invention includes a first hole formed from the discharge surface of the electrode plate to the middle in the thickness direction, and an axis parallel to the axis of the first hole from the surface opposite to the discharge surface. And the second hole formed in the middle of the thickness direction has a plurality of air holes formed so as to communicate with each other, and the first hole is provided between the first hole and the second hole. An orifice having an opening area equal to or smaller than the opening area of the portion is provided.

第１穴部と第２穴部との連通部に第１穴部の開口面積以下の開口面積を有するオリフィスが設けられているので、プラズマの逆流を防止し、プラズマの冷却板への到達を阻止することができる。両穴部とも平行に形成されるので、両穴部の先端部の一部が重なるように加工位置を設定すれば、オリフィスを容易に形成することができる。これにより、各通気孔からのエッチングガスの流れを均一に保つことが可能であり、被処理基板に面内均一なプラズマ処理を行わせることができる。   Since an orifice having an opening area equal to or smaller than the opening area of the first hole is provided in the communication part between the first hole and the second hole, the backflow of the plasma is prevented and the plasma reaches the cooling plate. Can be blocked. Since both hole portions are formed in parallel, the orifice can be easily formed if the processing position is set so that the tip portions of both hole portions overlap each other. Thereby, the flow of the etching gas from each vent hole can be kept uniform, and the substrate to be processed can be subjected to in-plane uniform plasma processing.

また、本発明の電極板において、前記第１穴部と前記第２穴部とは、これらの軸芯方向と直交する方向にずれて配置されており、前記オリフィスは、前記第１穴部と前記第２穴部とを前記軸芯方向と直交する方向に連通するように設けられているとよい。
この場合、通気孔は、途中のオリフィスで屈曲して設けられるので、エッチングガスの流れを均一に保ちつつ、プラズマの逆流をより確実に阻止することができる。 Further, in the electrode plate of the present invention, the first hole portion and the second hole portion are arranged so as to be shifted in a direction orthogonal to the axial direction of the axis, and the orifice includes the first hole portion and the first hole portion. The second hole portion may be provided so as to communicate with a direction orthogonal to the axial direction.
In this case, since the vent hole is bent at the midway orifice, it is possible to more reliably prevent the back flow of plasma while keeping the flow of the etching gas uniform.

さらに、本発明の電極板において、前記第１穴部と前記第２穴部の軸芯が、前記電極板の放電面に対して垂直に設けられているとよい。
この場合、両穴部はドリル加工によって容易に形成することができる。両穴部とも電極板の表面に垂直に形成されるので、両穴部及びオリフィスの位置を高精度に管理することができ、各通気孔からのエッチングガスの流れを均一に保つことが可能である。 Furthermore, in the electrode plate of the present invention, the axial centers of the first hole portion and the second hole portion may be provided perpendicular to the discharge surface of the electrode plate.
In this case, both hole portions can be easily formed by drilling. Since both holes are formed perpendicular to the surface of the electrode plate, the positions of both holes and orifices can be managed with high accuracy, and the flow of etching gas from each vent can be kept uniform. is there.

本発明によれば、電極板への均一な通気孔の加工を容易にし、プラズマの逆流を防止することができるので、冷却板に損傷を与えることがなく、被処理基板に面内均一なプラズマ処理を行わせることができる。   According to the present invention, it is possible to facilitate the processing of uniform air holes in the electrode plate and to prevent the backflow of plasma, so that the plasma is uniform on the substrate to be processed without damaging the cooling plate. Processing can be performed.

プラズマ処理装置の概略構成図である。It is a schematic block diagram of a plasma processing apparatus. 本発明の電極板の第１実施形態を示す要部拡大平面図である。It is a principal part enlarged plan view which shows 1st Embodiment of the electrode plate of this invention. 図２に示す電極板のＡ−Ａ断面図である。It is AA sectional drawing of the electrode plate shown in FIG. 図３に示す電極板のＢ−Ｂ断面図である。It is BB sectional drawing of the electrode plate shown in FIG. 本発明の電極板の第２実施形態を示す要部拡大平面図である。It is a principal part enlarged plan view which shows 2nd Embodiment of the electrode plate of this invention. 図５に示す電極板の要部断面図である。It is principal part sectional drawing of the electrode plate shown in FIG. 本発明の電極板の第３実施形態を示す要部断面図である。It is principal part sectional drawing which shows 3rd Embodiment of the electrode plate of this invention.

以下、本発明の電極板の実施形態を、図面を参照しながら説明する。
まず、この電極板が用いられるプラズマ処理装置としてプラズマエッチング装置１について説明する。
このプラズマエッチング装置１は、図１の概略断面図に示されるように、真空チャンバー２内の上部に電極板（上部電極）３が設けられるとともに、下部に上下動可能な架台（下部電極）４が電極板３と相互間隔をおいて平行に設けられている。この場合、上部の電極板３は絶縁体５により真空チャンバー２の壁に対して絶縁状態に支持されているとともに、架台４の上には、静電チャック６と、その周りを囲むシリコン製の支持リング７とが設けられており、静電チャック６の上に、支持リング７により周縁部を支持した状態でウエハ（被処理基板）８を載置するようになっている。また、真空チャンバー２の上部にはエッチングガス供給管９が設けられ、このエッチングガス供給管９から送られてきたエッチングガスは拡散部材１０を経由した後、電極板３に設けられた通気孔１１を通してウエハ８に向かって流され、真空チャンバー２の側部の排出口１２から外部に排出される構成とされている。一方、電極板３と架台４との間には高周波電源１３により高周波電圧が印加されるようになっている。 Hereinafter, embodiments of the electrode plate of the present invention will be described with reference to the drawings.
First, a plasma etching apparatus 1 will be described as a plasma processing apparatus using this electrode plate.
As shown in the schematic cross-sectional view of FIG. 1, the plasma etching apparatus 1 is provided with an electrode plate (upper electrode) 3 in the upper part of the vacuum chamber 2 and a gantry (lower electrode) 4 that can be moved up and down in the lower part. Are provided in parallel with the electrode plate 3 at a distance from each other. In this case, the upper electrode plate 3 is supported in an insulated state by the insulator 5 with respect to the wall of the vacuum chamber 2, and the electrostatic chuck 6 and the silicon-made surrounding material are placed on the mount 4. A support ring 7 is provided, and a wafer (substrate to be processed) 8 is placed on the electrostatic chuck 6 with the peripheral edge supported by the support ring 7. Further, an etching gas supply pipe 9 is provided in the upper part of the vacuum chamber 2, and the etching gas sent from the etching gas supply pipe 9 passes through the diffusion member 10, and then the air holes 11 provided in the electrode plate 3. Through the discharge port 12 on the side of the vacuum chamber 2 and discharged to the outside. On the other hand, a high frequency voltage is applied between the electrode plate 3 and the gantry 4 by a high frequency power source 13.

また、電極板３は、シリコンによって円板状に形成されており、その背面には熱伝導性に優れるアルミニウム等からなる冷却板１４が固定され、この冷却板１４にも電極板３の通気孔１１に連通するように、この通気孔１１と同じピッチで貫通孔１５が形成されている。そして、電極板３は、背面が冷却板に接触した状態でねじ止め等によってプラズマ処理装置１内に固定される。電極板３の詳細構造については後述する。   The electrode plate 3 is formed in a disk shape with silicon, and a cooling plate 14 made of aluminum or the like having excellent thermal conductivity is fixed to the back surface of the electrode plate 3. The cooling plate 14 also has a vent hole in the electrode plate 3. Through holes 15 are formed at the same pitch as the air holes 11 so as to communicate with the air holes 11. The electrode plate 3 is fixed in the plasma processing apparatus 1 by screwing or the like with the back surface in contact with the cooling plate. The detailed structure of the electrode plate 3 will be described later.

プラズマエッチング装置１では、高周波電源１３から高周波電圧を印加してエッチングガスを供給すると、このエッチングガスは拡散部材１０を経由して、電極板３に設けられた通気孔１１を通って電極板３と架台４との間の空間に放出され、この空間内でプラズマとなってウエハ８に当り、このプラズマによるスパッタリングすなわち物理反応と、エッチングガスの化学反応とにより、ウエハ８の表面がエッチングされる。
また、ウエハ８の均一なエッチングを行う目的で、発生したプラズマをウエハ８の中央部に集中させ、外周部へ拡散するのを阻止して電極板３とウエハ８との間に均一なプラズマを発生させるために、通常、プラズマ発生領域１６がシリコン製のシールドリング１７で囲われた状態とされている。 In the plasma etching apparatus 1, when an etching gas is supplied by applying a high-frequency voltage from a high-frequency power source 13, the etching gas passes through the diffusion member 10, passes through the vent holes 11 provided in the electrode plate 3, and is then connected to the electrode plate 3. Is released into a space between the pedestal 4 and the gantry 4 and becomes plasma in this space, hits the wafer 8, and the surface of the wafer 8 is etched by sputtering, that is, physical reaction and chemical reaction of the etching gas. .
Further, for the purpose of uniformly etching the wafer 8, the generated plasma is concentrated on the central portion of the wafer 8, and is prevented from diffusing to the outer peripheral portion, thereby generating a uniform plasma between the electrode plate 3 and the wafer 8. In order to generate the plasma, the plasma generation region 16 is usually surrounded by a silicon shield ring 17.

次に、電極板３の詳細構造について図２から図４を参照しながら説明する。
本実施形態の電極板３には、厚さ方向に延びる通気孔１１が複数形成されている。この通気孔１１は、プラズマエッチングを行う際に、電極板３とウエハ８との間にエッチングガスを供給するために用いられる。なお、電極板３は、単結晶シリコン、柱状晶シリコン、又は多結晶シリコンにより円板状に形成されている。 Next, the detailed structure of the electrode plate 3 will be described with reference to FIGS.
A plurality of air holes 11 extending in the thickness direction are formed in the electrode plate 3 of the present embodiment. The air holes 11 are used to supply an etching gas between the electrode plate 3 and the wafer 8 when performing plasma etching. The electrode plate 3 is formed in a disc shape from single crystal silicon, columnar crystal silicon, or polycrystalline silicon.

通気孔１１は、電極板３の放電面３ａから厚さ方向途中まで垂直に形成された第１穴部１１ａと、放電面３ａの反対面３ｂから厚さ方向途中まで垂直に形成された第２穴部１１ｂとを有するとともに、これら両穴部１１ａ，１１ｂが電極板３の厚さ方向と直交する方向に軸芯ｃ１，ｃ２をずらして配置されていることにより、両穴部１１ａ，１１ｂを電極板３の厚さ方向と直交する方向に連通するオリフィス２１が形成されている。
オリフィス２１は、両穴部１１ａ，１１ｂの先端部で、その側部どうしが重なることにより形成され、図４に示すように、矩形状に開口して設けられる。本実施形態においては、両穴部１１ａ，１１ｂをドリルにより加工し、図２から図４に示すように、各穴部１１ａ，１１ｂの先端部の側部が重なるように加工位置を設定することでオリフィス２１を形成している。 The vent hole 11 has a first hole 11a formed vertically from the discharge surface 3a of the electrode plate 3 to the middle in the thickness direction, and a second hole formed vertically from the opposite surface 3b of the discharge surface 3a to the middle of the thickness direction. The holes 11b and the holes 11a and 11b are arranged by shifting the shaft cores c1 and c2 in a direction perpendicular to the thickness direction of the electrode plate 3, thereby making the holes 11a and 11b An orifice 21 communicating with a direction orthogonal to the thickness direction of the electrode plate 3 is formed.
The orifice 21 is formed by overlapping the side portions at the front end portions of both hole portions 11a and 11b, and is provided to open in a rectangular shape as shown in FIG. In the present embodiment, both hole portions 11a and 11b are processed by a drill, and the processing positions are set so that the side portions of the tip portions of the hole portions 11a and 11b overlap as shown in FIGS. The orifice 21 is formed.

例えば、板厚ｔが５ｍｍ以上３０ｍｍ以下とされる電極板に対して、両穴部１１ａ，１１ｂは同径に設けられており、その穴径ｄ１，ｄ２は０．３ｍｍ以上１．０ｍｍ以下に形成されている。また、オリフィス２１の開口面積は、図４に示すように、両穴部１１ａ，１１ｂの軸芯間距離ｗと、両穴部１１ａ，１１ｂの厚さ方向の重なり距離Ｌとによって調整可能であり、重なり距離Ｌは、０．５ｍｍ以上、板厚ｔの１／３以下とされ、オリフィスの開口面積は、０．０５ｍｍ２以上、両穴部１１ａ，１１ｂの開口面積以下に形成されている。
なお、通気孔１１は、両穴部１１ａ，１１ｂとなる下穴のドリル加工後に、その表面を平滑化するためのエッチング処理を施して形成される。オリフィス２１は、両穴部１１ａ，１１ｂのドリル加工時に形成されるようにしてもよいが、ドリルによる両穴部１１ａ，１１ｂの下穴形成時においては形成せずに、エッチング処理の際に形成されるようにしてもよい。 For example, for an electrode plate having a plate thickness t of 5 mm or more and 30 mm or less, both hole portions 11a and 11b are provided with the same diameter, and the hole diameters d1 and d2 are 0.3 mm or more and 1.0 mm or less. Is formed. Further, as shown in FIG. 4, the opening area of the orifice 21 can be adjusted by the inter-axial distance w between the holes 11a and 11b and the overlapping distance L in the thickness direction of the holes 11a and 11b. The overlap distance L is 0.5 mm or more and 1/3 or less of the plate thickness t, and the opening area of the orifice is 0.05 mm 2 or more and less than the opening area of both the holes 11a and 11b.
The vent hole 11 is formed by performing an etching process for smoothing the surface after drilling the pilot holes to be the both hole portions 11a and 11b. The orifice 21 may be formed when the holes 11a and 11b are drilled. However, the orifice 21 is not formed when the holes 11a and 11b are drilled by the drill, but is formed during the etching process. You may be made to do.

このように構成した電極板３においては、通気孔１１を構成する第１穴部１１ａと第２穴部１１ｂとの連通部に、第１穴部１１ａの開口面積以下となる開口面積を有するオリフィス２１を形成していることから、放電面３ａ側からのプラズマの逆流を防止することができる。また、オリフィス２１を、電極板３の厚さ方向と直交する方向に連通して設けるとともに、通気孔１１の途中をクランク状に屈曲して設けているので、エッチングガスの流れを均一に保ちつつ、プラズマの逆流を防止して、プラズマの冷却板１４への到達を確実に阻止することができる。   In the electrode plate 3 configured as described above, an orifice having an opening area equal to or smaller than the opening area of the first hole portion 11a is formed in the communication portion between the first hole portion 11a and the second hole portion 11b constituting the vent hole 11. 21 is formed, it is possible to prevent the backflow of plasma from the discharge surface 3a side. In addition, the orifice 21 is provided so as to communicate with the direction perpendicular to the thickness direction of the electrode plate 3 and the vent hole 11 is bent in a crank shape so that the etching gas flow is kept uniform. Therefore, it is possible to prevent the plasma from flowing back and reliably prevent the plasma from reaching the cooling plate 14.

上述実施形態のように、両穴部１１ａ，１１ｂの垂直穴は、ドリル加工によって容易に形成することができ、ドリルによる穴部の先端部の側部が重なるように加工位置を設定することで、オリフィス２１も容易に形成することができる。また、両穴部とも電極板３の表面に垂直に形成されるので、両穴部１１ａ，１１ｂ及びオリフィス２１の位置を高精度に管理することができ、各通気孔１１からのエッチングガスの流れを均一に保つことが可能である。これにより、被処理基板に面内均一なプラズマ処理を行わせることができる。
なお、上述実施形態においては、第１穴部１１ａと第２穴部１１ｂとを同径に設けていたが、それぞれ異なる径で形成してもよい。その際、プラズマの逆流を防止するため、放電面側の第１穴部は、その反対面側の第２穴部よりも小径とすることが好ましい。 As in the above-described embodiment, the vertical holes of both the holes 11a and 11b can be easily formed by drilling, and the machining position is set so that the side of the tip of the hole by the drill overlaps. The orifice 21 can also be easily formed. Further, since both the holes are formed perpendicular to the surface of the electrode plate 3, the positions of the holes 11a, 11b and the orifice 21 can be managed with high accuracy, and the flow of the etching gas from each vent hole 11 can be controlled. Can be kept uniform. Thereby, the in-plane uniform plasma treatment can be performed on the substrate to be processed.
In the above-described embodiment, the first hole portion 11a and the second hole portion 11b are provided with the same diameter, but may be formed with different diameters. At this time, in order to prevent the backflow of plasma, it is preferable that the first hole portion on the discharge surface side has a smaller diameter than the second hole portion on the opposite surface side.

図５から図６は、本発明の電極板の第２実施形態を示している。この実施形態の電極板３０においては、図６に示すように、電極板３０の放電面３０ａから厚さ方向途中まで垂直に第１穴部３１ａを形成するとともに、放電面３０ａの反対面３０ｂから第１穴部３１ａと同一軸芯上に厚さ方向途中まで垂直に第２穴部３１ｂを形成して、両穴部３１ａ，３１ｂの間にオリフィス２２を設けることにより互いに連通させている。つまり、両穴部３１ａ，３１ｂの軸芯ｃ１１，ｃ１２及びオリフィス２２が、同一線上に配置され、電極板３０を厚さ方向に沿って貫通するように通気孔３１が形成されている。本実施形態においては、両穴部３１ａ，３１ｂをドリルにより加工しており、ドリル先端の切刃により形成されるテーパ部３２ａ，３２ｂの一部が重なるように穴部３１ａ，３１ｂの加工深さを設定することにより、円形のオリフィス２２を形成している。   5 to 6 show a second embodiment of the electrode plate of the present invention. In the electrode plate 30 of this embodiment, as shown in FIG. 6, while forming the 1st hole part 31a perpendicularly | vertically from the discharge surface 30a of the electrode plate 30 to the middle of thickness direction, from the surface 30b opposite to the discharge surface 30a. A second hole 31b is formed vertically on the same axis as that of the first hole 31a in the thickness direction, and an orifice 22 is provided between the holes 31a and 31b so as to communicate with each other. That is, the shaft cores c11 and c12 of the holes 31a and 31b and the orifice 22 are arranged on the same line, and the vent hole 31 is formed so as to penetrate the electrode plate 30 along the thickness direction. In the present embodiment, both hole portions 31a and 31b are processed by a drill, and the processing depth of the hole portions 31a and 31b is such that part of the tapered portions 32a and 32b formed by the cutting edge at the tip of the drill overlap. Is set to form a circular orifice 22.

この場合、第１実施形態と同様に、板厚ｔが５ｍｍ以上３０ｍｍ以下とされる電極板に対して、両穴部３１ａ，３１ｂは同径に設けられており、その穴径ｄ１１，ｄ１２は０．３ｍｍ以上１．０ｍｍ以下に形成されている。また、オリフィス２２の開口面積は、両穴部３１ａ，３１ｂの開口面積以下に形成されている。   In this case, as in the first embodiment, both hole portions 31a and 31b are provided to have the same diameter with respect to the electrode plate having a thickness t of 5 mm to 30 mm, and the hole diameters d11 and d12 are It is formed in a range of 0.3 mm to 1.0 mm. Further, the opening area of the orifice 22 is formed to be equal to or smaller than the opening area of both hole portions 31a and 31b.

このように構成した電極板３０では、通気孔３１を構成する両穴部３１ａ，３１ｂを同一線上に並べて加工し、両穴部３１ａ，３１ｂの先端部の一部を重ねて形成することにより、両穴部３１ａ，３１ｂの開口面積以下となる開口面積のオリフィス２２を形成している。これにより、放電面３０ａ側からのプラズマの逆流を防止し、プラズマが冷却板へ到達することを阻止することができる。
なお、本発明の平行な軸芯とは、第１実施形態のように両穴部３１ａ，３１ｂの軸芯ｃ１，ｃ２を直交する方向にずらして配置されたもの、及び第２実施形態のように軸芯ｃ１１，ｃ１２を同一線上に並べて配置したものの両方を含むものとする。 In the electrode plate 30 configured in this way, by processing both hole portions 31a and 31b constituting the vent hole 31 on the same line and forming a part of the tip portion of both hole portions 31a and 31b, An orifice 22 having an opening area that is equal to or smaller than the opening area of both the holes 31a and 31b is formed. Thereby, the backflow of the plasma from the discharge surface 30a side can be prevented, and the plasma can be prevented from reaching the cooling plate.
In addition, the parallel shaft core of the present invention is the one in which the shaft cores c1 and c2 of both hole portions 31a and 31b are shifted in the orthogonal direction as in the first embodiment, and the second embodiment. The shaft cores c11 and c12 are both arranged side by side on the same line.

また、本発明は上記実施形態に限定されるものではなく、本発明の趣旨を逸脱しない範囲において種々の変更を加えることが可能である。
例えば、前述の第２実施形態においては、ドリル先端の切刃により形成されるテーパ部３２ａ，３２ｂの一部を重ねて加工することでオリフィス２２を形成していたが、図７に示す電極板４０のように、両穴部４１ａ，４１ｂの間に、これらよりも小径の連通穴４２を設けることによりオリフィス２３を形成し、通気孔４１を構成してもよい。
また、上記実施形態においては、通気孔を構成する両穴部をドリル加工により形成したが、レーザ加工によって形成することも可能であり、両穴部を放電面に対して傾斜させて形成してもよい。 The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention.
For example, in the second embodiment described above, the orifice 22 is formed by processing a part of the tapered portions 32a and 32b formed by the cutting edge of the drill tip, but the electrode plate shown in FIG. As shown in FIG. 40, the vent hole 41 may be configured by forming the orifice 23 by providing a communication hole 42 having a smaller diameter between both the hole portions 41a and 41b.
Moreover, in the said embodiment, although both the hole parts which comprise a vent hole were formed by drilling, it is also possible to form by laser processing, forming both hole parts inclining with respect to the discharge surface. Also good.

１ プラズマエッチング装置
２ 真空チャンバー
３，３０，４０ 電極板
３ａ，３０ａ 放電面
３ｂ，３０ｂ 反対面
４ 架台（下部電極）
５ 絶縁体
６ 静電チャック
７ 支持リング
８ ウエハ（被処理基板）
９ エッチングガス供給管
１０ 拡散部材
１１，３１，４１ 通気孔
１１ａ，３１ａ，４１ａ 第１穴部
１１ｂ，３１ｂ，４１ｂ 第２穴部
１２ 排出口
１３ 高周波電源
１４ 冷却板
１５ 貫通孔
１６ プラズマ発生領域
１７ シールドリング
２１，２２，２３ オリフィス
３２ａ，３２ｂ テーパ部
４２ 連通穴
DESCRIPTION OF SYMBOLS 1 Plasma etching apparatus 2 Vacuum chamber 3, 30, 40 Electrode plate 3a, 30a Discharge surface 3b, 30b Opposite surface 4 Base (lower electrode)
5 Insulator 6 Electrostatic chuck 7 Support ring 8 Wafer (substrate to be processed)
DESCRIPTION OF SYMBOLS 9 Etching gas supply pipe 10 Diffusion member 11, 31, 41 Vent hole 11a, 31a, 41a 1st hole part 11b, 31b, 41b 2nd hole part 12 Outlet 13 High frequency power supply 14 Cooling plate 15 Through-hole 16 Plasma generation area 17 Shield ring 21, 22, 23 Orifice 32a, 32b Taper part 42 Communication hole

Claims (3)

電極板の放電面から厚さ方向途中まで形成された第１穴部と、前記放電面とは反対面から前記第１穴部の軸芯と平行な軸芯に沿って厚さ方向途中まで形成された第２穴部とが、互いに連通して形成される複数の通気孔を有するとともに、前記第１穴部と前記第２穴部との間に前記第１穴部の開口面積以下の開口面積を有するオリフィスが設けられていることを特徴とするプラズマ処理装置用電極板。   Formed from the discharge surface of the electrode plate to the middle in the thickness direction, and from the surface opposite to the discharge surface to the middle of the thickness direction along the axis parallel to the axis of the first hole The second hole portion has a plurality of air holes formed so as to communicate with each other, and an opening smaller than an opening area of the first hole portion between the first hole portion and the second hole portion. An electrode plate for a plasma processing apparatus, wherein an orifice having an area is provided. 前記第１穴部と前記第２穴部とは、これらの軸芯方向と直交する方向にずれて配置されており、前記オリフィスは、前記第１穴部と前記第２穴部とを前記軸芯方向と直交する方向に連通するように設けられていることを特徴とする請求項１記載のプラズマ処理装置用電極板。   The first hole portion and the second hole portion are arranged so as to be shifted in a direction orthogonal to the axial direction of the shaft, and the orifice connects the first hole portion and the second hole portion to the shaft. The electrode plate for a plasma processing apparatus according to claim 1, wherein the electrode plate is provided so as to communicate with a direction orthogonal to the core direction. 前記第１穴部と前記第２穴部の軸芯が、前記電極板の放電面に対して垂直に設けられていることを特徴とする請求項１又は２に記載のプラズマ処理装置用電極板。
3. The electrode plate for a plasma processing apparatus according to claim 1, wherein axial axes of the first hole portion and the second hole portion are provided perpendicular to a discharge surface of the electrode plate. .
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