JP2012094630A - 半導体発光素子 - Google Patents
半導体発光素子 Download PDFInfo
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- JP2012094630A JP2012094630A JP2010239642A JP2010239642A JP2012094630A JP 2012094630 A JP2012094630 A JP 2012094630A JP 2010239642 A JP2010239642 A JP 2010239642A JP 2010239642 A JP2010239642 A JP 2010239642A JP 2012094630 A JP2012094630 A JP 2012094630A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 89
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 29
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 74
- 229910002601 GaN Inorganic materials 0.000 claims description 73
- 238000005530 etching Methods 0.000 claims description 23
- 238000000605 extraction Methods 0.000 abstract description 11
- 239000007789 gas Substances 0.000 description 24
- 238000000034 method Methods 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 238000000149 argon plasma sintering Methods 0.000 description 5
- 238000005253 cladding Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910017727 AgNi Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 101100434911 Mus musculus Angpt1 gene Proteins 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- YZASAXHKAQYPEH-UHFFFAOYSA-N indium silver Chemical compound [Ag].[In] YZASAXHKAQYPEH-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
【解決手段】半導体発光素子10では、半導体層11は第1の面と第1の面に対向する第2の面を有し、活性層を含む多層構造である。第1電極15が、半導体層11の第1の面に形成されている。複数のITOピラー16が、半導体層11の第2の面に、第2の面の一部が露出するように分散して形成されている。反射電極17が、ITOピラー16と隣接するITOピラー16との間を埋め込み、ITOピラー16を覆うように半導体層11の第2の面に形成されている。接合金属層18が、反射電極17上に形成されている。支持基板19が、接合金属層18を介して半導体層11に接合されている。ITOピラー16と隣接するITOピラー16との間に、半導体層11の第2の面が露出し、その露出した面に反射電極17が形成されている。
【選択図】 図1
Description
11 半導体層
12 P型GaN層
13 活性層
14 N型GaN層
15、63 第1電極
16、71 ITOピラー
17、73 反射電極
18 接合金属層
18a 第1接合金属層
18b 第2接合金属層
19 支持基板
20、62 第2電極
21、22、23、25 光
24 光散乱範囲
30 ITO膜
30a 結晶質ITO(第1のITO)
30b アモルファスITO(第2のITO)
31、72 レジスト膜
51 凹凸部
52 保護膜
61 透明基板
Claims (5)
- 第1の面と前記第1の面に対向する第2の面を有し、活性層を含む多層構造の半導体層と、
前記半導体層の前記第1の面に形成された第1電極と、
前記半導体層の前記第2の面に、前記第2の面の一部が露出するように分散して形成された複数のITOピラーと、
前記ITOピラーと隣接する前記ITOピラーとの間を埋め込み、前記ITOピラーを覆うように前記半導体層の前記第2の面に形成された反射電極と、
前記反射電極上に形成された接合金属層と、
前記接合金属層を介して前記半導体層に接合された支持基板と、
を具備し、
前記ITOピラーと隣接する前記ITOピラーとの間に、前記半導体層の前記第2の面が露出し、その露出した面に前記反射電極が形成されていることを特徴とする半導体発光素子。 - 第1の面と前記第1の面に対向する第2の面を有し、活性層を含む多層構造の半導体層と、
前記半導体層の前記第2の面に、前記第2の面の一部が露出するように分散して形成された複数のITOピラーと、
前記ITOピラーと隣接する前記ITOピラーとの間を埋め込み、前記ITOピラーを覆うように前記半導体層の前記第2の面に形成された金属層と、
を具備し、
前記ITOピラーと隣接する前記ITOピラーとの間に、前記半導体層の前記第2の面が露出し、その露出した面に前記金属層が形成されていることを特徴とする半導体発光素子。 - 前記ITOピラーは、前記半導体層の前記第2の面に、第1エッチング速度を有し、分散した第1のITOと、前記第1エッチング速度より大きい第2エッチング速度を有し、前記第1のITOを囲む第2のITOを備えたITO膜を形成し、エッチングにより、前記第2のITOを除去し、前記第1のITOを残置することにより形成されたものであることを特徴とする請求項1または請求項2に記載の半導体発光素子。
- 前記ITOピラーは、前記半導体層の前記第2の面に分散して島状に形成されたものであることを特徴とする請求項1または請求項2に記載の半導体発光素子。
- 前記半導体層の前記第2の面は、P型窒化ガリウムであることを特徴とする請求項1または請求項2に記載の半導体発光素子。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010239642A JP2012094630A (ja) | 2010-10-26 | 2010-10-26 | 半導体発光素子 |
US13/281,305 US20120098014A1 (en) | 2010-10-26 | 2011-10-25 | Semiconductor light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010239642A JP2012094630A (ja) | 2010-10-26 | 2010-10-26 | 半導体発光素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2012094630A true JP2012094630A (ja) | 2012-05-17 |
Family
ID=45972244
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010239642A Pending JP2012094630A (ja) | 2010-10-26 | 2010-10-26 | 半導体発光素子 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20120098014A1 (ja) |
JP (1) | JP2012094630A (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI474507B (zh) * | 2011-10-18 | 2015-02-21 | Lextar Electronics Corp | 固態發光元件之製作方法 |
JP5792694B2 (ja) * | 2012-08-14 | 2015-10-14 | 株式会社東芝 | 半導体発光素子 |
US11969964B2 (en) * | 2013-05-22 | 2024-04-30 | Ningbo Solartron Technology Co., Ltd. | Method for manufacturing silver-plated reflecting film |
WO2020153308A1 (ja) * | 2019-01-22 | 2020-07-30 | Dowaエレクトロニクス株式会社 | 深紫外発光素子用の反射電極の製造方法、深紫外発光素子の製造方法および深紫外発光素子 |
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-
2010
- 2010-10-26 JP JP2010239642A patent/JP2012094630A/ja active Pending
-
2011
- 2011-10-25 US US13/281,305 patent/US20120098014A1/en not_active Abandoned
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