JP2012089856A - 基板洗浄方法及び基板洗浄装置 - Google Patents
基板洗浄方法及び基板洗浄装置 Download PDFInfo
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- JP2012089856A JP2012089856A JP2011256240A JP2011256240A JP2012089856A JP 2012089856 A JP2012089856 A JP 2012089856A JP 2011256240 A JP2011256240 A JP 2011256240A JP 2011256240 A JP2011256240 A JP 2011256240A JP 2012089856 A JP2012089856 A JP 2012089856A
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- processing liquid
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- 239000000758 substrate Substances 0.000 title claims abstract description 107
- 238000004140 cleaning Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title description 50
- 238000012545 processing Methods 0.000 claims abstract description 393
- 239000007788 liquid Substances 0.000 claims abstract description 276
- 230000007246 mechanism Effects 0.000 claims abstract description 15
- 239000007921 spray Substances 0.000 claims abstract description 10
- 239000002699 waste material Substances 0.000 claims abstract description 10
- 238000003860 storage Methods 0.000 claims description 35
- 238000011084 recovery Methods 0.000 claims description 7
- 235000012431 wafers Nutrition 0.000 abstract description 146
- 230000007423 decrease Effects 0.000 abstract description 3
- 230000008569 process Effects 0.000 description 31
- 238000012546 transfer Methods 0.000 description 30
- 239000010808 liquid waste Substances 0.000 description 22
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 21
- 238000010586 diagram Methods 0.000 description 19
- 239000012535 impurity Substances 0.000 description 18
- 239000012528 membrane Substances 0.000 description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- 238000001816 cooling Methods 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 11
- 230000032258 transport Effects 0.000 description 9
- 239000012153 distilled water Substances 0.000 description 8
- 239000003960 organic solvent Substances 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 4
- 238000007599 discharging Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
【解決手段】処理室46、基板保持手段、処理液を供給するノズル60、第1速度又は該第1速度以上の速度である第2速度で回転させる回転機構、処理液体格納容器76を有し、処理液体を回収及び循環し、再度前記ノズル60から供給する処理液体循環回収機構73、処理液体を廃棄する処理液体廃棄機構、処理液体が前記基板保持手段が前記第1速度で回転するときには前記処理液体循環回収機構に、前記第2速度で回転して前記ノズル60から前記処理液体が供給されるときには前記処理液体廃棄機構に導かれるように接続を変更する制御装置を有する。前記処理液体格納容器76は、底部に廃液ライン107、壁面に前記処理液体格納容器内を洗浄するスプレーノズル109を有する。
【選択図】図4A
Description
へ搬送される基板を受け取るのに用いられ、かつ(上側)基板搬送ユニット16は処理ユニット2から入出ポート部4へ搬送される基板を受け取るのに用いられて良い。
Claims (1)
- 処理液体を用いて基板表面に形成された膜を除去する除去装置であって:
処理室;
前記基板表面を上方に向けた姿勢で保持する基板保持手段;
前記基板表面に対向する位置に配置された処理液を供給するノズル;
前記基板保持手段を少なくとも第1速度又は該第1速度以上の速度である第2速度で回転させる回転機構;
処理液体格納容器を有し、前記処理室への接続が可能で、前記ノズルから供給される処理液体を回収及び循環させることで、再度前記ノズルから供給することを可能にする処理液体循環回収機構;
前記処理室への接続が可能で、前記ノズルから供給される処理液体を廃棄する処理液体廃棄機構;並びに
前記基板保持手段が前記第1速度で回転するときには前記処理液体循環回収機構に処理液体が導かれ、前記基板保持手段が前記第2速度で回転していて前記ノズルから前記処理液体が供給されているときには前記処理液体廃棄機構に処理液体が導かれるように、前記処理室への接続を変更する制御装置;
を有する除去装置であって、
前記処理液体格納容器は、該処理液体格納容器の底部に廃液ライン、前記処理液体格納容器の壁面に前記処理液体格納容器内を洗浄するためのスプレーノズルを有することを特徴とする、
除去装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/470,353 | 2006-09-06 | ||
US11/470,353 US7678199B2 (en) | 2006-09-06 | 2006-09-06 | Substrate cleaning method |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009527487A Division JP4874394B2 (ja) | 2006-09-06 | 2007-08-24 | 基板洗浄方法及び基板洗浄装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012089856A true JP2012089856A (ja) | 2012-05-10 |
JP5425165B2 JP5425165B2 (ja) | 2014-02-26 |
Family
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JP2009527487A Active JP4874394B2 (ja) | 2006-09-06 | 2007-08-24 | 基板洗浄方法及び基板洗浄装置 |
JP2011256240A Active JP5425165B2 (ja) | 2006-09-06 | 2011-11-24 | 基板洗浄方法及び基板洗浄装置 |
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JP2009527487A Active JP4874394B2 (ja) | 2006-09-06 | 2007-08-24 | 基板洗浄方法及び基板洗浄装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7678199B2 (ja) |
JP (2) | JP4874394B2 (ja) |
KR (1) | KR101107415B1 (ja) |
TW (1) | TWI369725B (ja) |
WO (1) | WO2008030713A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7678199B2 (en) * | 2006-09-06 | 2010-03-16 | Tokyo Electron Limited | Substrate cleaning method |
US20090241995A1 (en) * | 2008-03-31 | 2009-10-01 | Tokyo Electron Limited | Substrate cleaning method and apparatus |
JP5033108B2 (ja) * | 2008-11-05 | 2012-09-26 | 東京エレクトロン株式会社 | 液処理方法、液処理装置、および記憶媒体 |
JP5381388B2 (ja) * | 2009-06-23 | 2014-01-08 | 東京エレクトロン株式会社 | 液処理装置 |
US20110076623A1 (en) * | 2009-09-29 | 2011-03-31 | Tokyo Electron Limited | Method for reworking silicon-containing arc layers on a substrate |
US9170496B2 (en) * | 2011-11-30 | 2015-10-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of pre-treating a wafer surface before applying a solvent-containing material thereon |
KR102107987B1 (ko) * | 2012-12-27 | 2020-05-08 | 세메스 주식회사 | 기판 처리 장치 |
JP6708508B2 (ja) * | 2016-07-26 | 2020-06-10 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP7008489B2 (ja) * | 2017-12-05 | 2022-01-25 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
CN108666205A (zh) * | 2018-05-15 | 2018-10-16 | 武汉新芯集成电路制造有限公司 | 一种晶圆清洗方法 |
TWI708680B (zh) * | 2019-01-08 | 2020-11-01 | 穎華科技股份有限公司 | 高分子塑膠前面板及其製法 |
CN112435918A (zh) * | 2020-12-10 | 2021-03-02 | 江西舜源电子科技有限公司 | 一种半导体材料的清洗装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003203894A (ja) * | 2001-11-05 | 2003-07-18 | Tokyo Electron Ltd | 基板処理装置及び基板処理方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0464134A (ja) * | 1990-07-03 | 1992-02-28 | Fujitsu Ltd | ルール部全結合ニューロの学習方法 |
US20060151007A1 (en) * | 1997-05-09 | 2006-07-13 | Bergman Eric J | Workpiece processing using ozone gas and chelating agents |
TW402737B (en) * | 1997-05-27 | 2000-08-21 | Tokyo Electron Ltd | Cleaning/drying device and method |
JPH10335298A (ja) * | 1997-05-27 | 1998-12-18 | Tokyo Electron Ltd | 処理装置及び処理方法 |
JP2000288491A (ja) * | 1999-04-07 | 2000-10-17 | Rohm Co Ltd | 電子部品の洗浄・乾燥装置 |
JP3739075B2 (ja) * | 2000-02-15 | 2006-01-25 | 東京エレクトロン株式会社 | 液処理装置及び液処理方法 |
JP3698403B2 (ja) * | 2000-02-28 | 2005-09-21 | 東京エレクトロン株式会社 | 回転式液処理装置 |
US6863741B2 (en) * | 2000-07-24 | 2005-03-08 | Tokyo Electron Limited | Cleaning processing method and cleaning processing apparatus |
JP3849846B2 (ja) * | 2001-05-21 | 2006-11-22 | 東京エレクトロン株式会社 | 回転式基板処理装置及び回転式基板処理方法 |
JP2003059884A (ja) * | 2001-08-20 | 2003-02-28 | Tokyo Electron Ltd | 基板処理装置及び基板処理方法 |
US6878216B2 (en) * | 2001-09-03 | 2005-04-12 | Tokyo Electron Limited | Substrate processing method and substrate processing system |
US6861371B2 (en) * | 2001-11-05 | 2005-03-01 | Tokyo Electron Limited | Substrate processing system and substrate processing method |
JP4678665B2 (ja) * | 2001-11-15 | 2011-04-27 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
JP4334844B2 (ja) * | 2002-06-26 | 2009-09-30 | 東京エレクトロン株式会社 | デバイス用溝構造体の製造方法 |
JP3974465B2 (ja) * | 2002-07-10 | 2007-09-12 | Necエレクトロニクス株式会社 | ポリマー除去方法 |
JP4488506B2 (ja) * | 2004-08-30 | 2010-06-23 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
US7678199B2 (en) * | 2006-09-06 | 2010-03-16 | Tokyo Electron Limited | Substrate cleaning method |
-
2006
- 2006-09-06 US US11/470,353 patent/US7678199B2/en active Active
-
2007
- 2007-08-24 JP JP2009527487A patent/JP4874394B2/ja active Active
- 2007-08-24 KR KR1020097006957A patent/KR101107415B1/ko active IP Right Grant
- 2007-08-24 WO PCT/US2007/076734 patent/WO2008030713A1/en active Application Filing
- 2007-09-03 TW TW096132699A patent/TWI369725B/zh active
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2011
- 2011-11-24 JP JP2011256240A patent/JP5425165B2/ja active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003203894A (ja) * | 2001-11-05 | 2003-07-18 | Tokyo Electron Ltd | 基板処理装置及び基板処理方法 |
Also Published As
Publication number | Publication date |
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JP5425165B2 (ja) | 2014-02-26 |
TW200818286A (en) | 2008-04-16 |
JP4874394B2 (ja) | 2012-02-15 |
TWI369725B (en) | 2012-08-01 |
US7678199B2 (en) | 2010-03-16 |
US20080053489A1 (en) | 2008-03-06 |
KR101107415B1 (ko) | 2012-01-19 |
KR20090064430A (ko) | 2009-06-18 |
WO2008030713A1 (en) | 2008-03-13 |
JP2010503236A (ja) | 2010-01-28 |
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