JP2011530818A - 放射源、リソグラフィ装置およびデバイス製造方法 - Google Patents
放射源、リソグラフィ装置およびデバイス製造方法 Download PDFInfo
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
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- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
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- G21K1/062—Devices having a multilayer structure
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- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
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Abstract
【選択図】図5
Description
[0001] 本願は、2008年8月14日に出願した米国仮出願第61/136,152号および2008年11月26日に出願した米国仮出願第61/193,420号の優先権を主張する。米国仮出願第61/136,152号および米国仮出願第61/193,420号の両方は、その全体を本願に参考として組み込む。
Claims (15)
- 極端紫外線(EUV)放射を透過させ、かつ非EUV二次電磁放射を偏向させるように構成されたスペクトル純度フィルタであって、前記スペクトル純度フィルタは、EUV放射に対して少なくとも20%の透過率を有する材料の本体および非EUV二次電磁放射に対して少なくとも50%の反射率を有する材料層を含み、前記層は前記本体の放射入射側に配置されている、スペクトル純度フィルタ。
- 前記本体の放射射出面に高放射率材料層をさらに含む、請求項1に記載のスペクトル純度フィルタ。
- 前記材料の放射率は0.3より大きい、請求項2に記載のスペクトル純度フィルタ。
- 前記高放射率材料層は前記材料層の放射入射側に配置されている、請求項2または3に記載のスペクトル純度フィルタ。
- 前記非EUV二次電磁放射に対して反射を有する前記材料層は、モリブデン、ルテニウム、金、銅および炭素の群から選択される、請求項1〜4のいずれかに記載のスペクトル純度フィルタ。
- 前記材料層は、サブマイクロメートル範囲内の波長を有する電磁放射に対して少なくとも10%吸収率、好ましくは少なくとも50%吸収率を有する、請求項1〜5のいずれかに記載のスペクトル純度フィルタ。
- 少なくとも20%の極端紫外線(EUV)放射を透過させ、かつ少なくとも50%の非EUV二次電磁放射を偏向させるスペクトル純度フィルタであって、前記スペクトル純度フィルタは、材料の本体および少なくとも0.3の放射率を有する高放射率材料層を含み、前記高放射率材料層は前記本体の放射射出面上に配置されている、スペクトル純度フィルタ。
- 前記高放射率材料層は前記本体の放射入射側に配置されている、請求項7に記載のスペクトル純度フィルタ。
- 前記本体は、EUV放射を透過する材料および非EUV二次電磁放射を抑制する材料の多層構造を含む、請求項7または8に記載のスペクトル純度フィルタ。
- 前記本体の材料は、ルビジウム(Rb)、ストロンチウム(Sr)、イットリウム(Y)、ジルコニウム(Zr)、ニオビウム(Nb)、モリブデン(Mo)、炭素(C)、ルテニウム(Ru)およびシリコン(Si)の群から選択される、請求項1〜9のいずれかに記載のスペクトル純度フィルタ。
- リソグラフィ装置においてまたはリソグラフィ装置と使用する放射源モジュールであって、前記放射源モジュールは、極端紫外線(EUV)放射を生成し、かつ前記EUV放射および非EUV二次電磁放射を出力するように構成され、請求項1〜10のいずれかに記載のスペクトル純度フィルタを含む、放射源モジュール。
- パターニングデバイスからのパターンを基板上に投影するリソグラフィ装置であって、請求項1〜10のいずれかに記載のスペクトル純度フィルタおよび/または請求項11に記載の放射源モジュールを含む、リソグラフィ装置。
- 極端紫外線(EUV)放射のパターン付きビームを基板上に投影することを含むデバイス製造方法であって、前記EUV放射は、請求項1〜10のいずれかに記載のスペクトル純度フィルタによってフィルタリングされるか、請求項11に記載の放射源モジュールによって生成されるか、または請求項12に記載のリソグラフィ装置によって投影される、デバイス製造方法。
- 放射源を用いて極端紫外線(EUV)放射および非EUV二次電磁放射を含む放射を生成することと、
スペクトル純度フィルタを用いてEUV放射を透過させ、かつ非EUV二次電磁放射を偏向させるように前記放射をフィルタリングすることであって、前記スペクトル純度フィルタは、EUV放射に対して少なくとも50%透過率を有する材料の本体、および前記本体の放射入射側に配置された非EUV二次電磁放射に対して少なくとも50%反射率を有する材料層を含む、ことと、
透過したEUV放射のパターン付きビームを基板上に投影することと
を含む、デバイス製造方法。 - 放射源を用いて極端紫外線(EUV)放射および非EUV二次電磁放射を含む放射を生成することと、
スペクトル純度フィルタを用いてEUV放射を透過させ、かつ非EUV二次電磁放射を偏向させるように前記放射をフィルタリングすることであって、前記スペクトル純度フィルタは、EUV放射に対して少なくとも20%透過率を有する材料の本体、および前記本体の放射射出面に少なくとも0.3の放射率を有する材料層を含む、ことと、
透過したEUV放射のパターン付きビームを基板上に投影することと
を含む、デバイス製造方法。
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US13615208P | 2008-08-14 | 2008-08-14 | |
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US19342008P | 2008-11-26 | 2008-11-26 | |
US61/193,420 | 2008-11-26 | ||
PCT/EP2009/005488 WO2010017890A1 (en) | 2008-08-14 | 2009-07-29 | Radiation source, lithographic apparatus, and device manufacturing method |
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WO2010003671A2 (en) | 2008-07-11 | 2010-01-14 | Asml Netherlands B.V. | Radiation source, lithographic apparatus, and device manufacturing method |
WO2011098170A1 (en) * | 2010-02-12 | 2011-08-18 | Asml Netherlands B.V. | Spectral purity filter |
JP5727590B2 (ja) * | 2010-04-27 | 2015-06-03 | エーエスエムエル ネザーランズ ビー.ブイ. | スペクトル純度フィルタ |
KR101793316B1 (ko) * | 2011-03-16 | 2017-11-02 | 케이엘에이-텐코 코포레이션 | 박막 스펙트럼 순도 필터 코팅을 갖는 영상 센서를 사용하는 euv 화학선 레티클 검사 시스템 |
NL2013700A (en) * | 2013-11-25 | 2015-05-27 | Asml Netherlands Bv | An apparatus, a device and a device manufacturing method. |
EP3444675A1 (en) * | 2017-08-14 | 2019-02-20 | ASML Netherlands B.V. | Optical detector |
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EP2310912A1 (en) | 2011-04-20 |
EP2310912B1 (en) | 2016-07-13 |
CN102099747A (zh) | 2011-06-15 |
NL2003306A1 (nl) | 2010-02-16 |
US9529283B2 (en) | 2016-12-27 |
US20110143269A1 (en) | 2011-06-16 |
JP5689059B2 (ja) | 2015-03-25 |
KR101607228B1 (ko) | 2016-03-29 |
KR20110055621A (ko) | 2011-05-25 |
CN102099747B (zh) | 2013-06-19 |
WO2010017890A1 (en) | 2010-02-18 |
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