JP2011526739A - 非変換光の発光が少ない、波長を変換する発光ダイオード - Google Patents
非変換光の発光が少ない、波長を変換する発光ダイオード Download PDFInfo
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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Abstract
Description
Claims (12)
- 波長変換型の発光デバイスの製造方法であって、
−第1の波長をもつ光を発するための発光ダイオードであって、前記発光ダイオードにより発された光を受け、当該受けた光の少なくとも一部を第2の波長をもつ光へと変換するよう適応された、波長変換物質が配置されている発光面をもつ、
発光ダイオードを提供するステップと、
−前記波長変換型の発光デバイスの外側表面の少なくとも一部に、有効な強度をもつ前記第1の波長の光による照射が光硬化型のコーティング材の硬化を誘起する光硬化型のコーティング材を配置するステップと、
−硬化した光遮断物質を形成するために、前記発光ダイオードを利用した前記光硬化型のコーティング材への照射により、前記光硬化型のコーティング材の少なくとも一部を硬化させるステップと、
を含む方法。 - 未硬化のコーティング材を除去するステップを更に含むことを特徴とする、請求項1に記載の方法。
- 前記波長変換物質が、自立型の波長変換体に含まれていることを特徴とする、請求項1又は2に記載の方法。
- 前記自立型の波長変換体が、光透過性の接着材を用いて前記発光ダイオード上に配置され、前記光硬化型のコーティング材が、前記接着材の側面部に配置されることを特徴とする、請求項3に記載の方法。
- 前記光硬化型のコーティング材が、エポキシ及びポリビニール・アルコールから成るグループから選択されることを特徴とする、請求項1乃至4の何れか一項に記載の方法。
- 前記光硬化型のコーティング材が、前記波長変換物質により変換された光に対して基本的に反応しないことを特徴とする、請求項1乃至5の何れか一項に記載の方法。
- 第1の波長をもつ光を発するための発光ダイオードであって、前記発光ダイオードにより発された光の少なくとも一部を受け、前記光の少なくとも一部を、第2の波長をもつ光へと変換するよう適応された、波長変換物質が配置されている発光面をもつ、発光ダイオードを有する、波長変換型の発光デバイスであって、
−前記デバイスの外側表面の少なくとも一部が、前記第1の波長をもつ光による照射があると硬化する光硬化型のコーティング材を具備しており、
−前記光硬化型のコーティング材が、硬化後の状態において、散乱性の物質、吸収性の物質、及び反射性の物質のグループから選択された物質を備えていることを特徴とする、波長変換型の発光デバイス。 - 前記波長変換物質が、自立型の波長変換体に含まれていることを特徴とする、請求項7に記載の波長変換型の発光デバイス。
- 前記波長変換体が光透過性の接着材を用いて前記発光面に配置され、当該接着材の側面が前記光硬化型のコーティング材を具備していることを特徴とする、請求項8に記載の波長変換型の発光デバイス。
- 発光ダイオードであって、当該発光ダイオードにより発された光の少なくとも一部を受け、前記光の少なくとも一部を異なる波長をもつ光へと変換するよう適応された、波長変換物質が配置されている発光面をもつ発光ダイオードを有する、波長変換型の発光デバイスであって、
−散乱性の物質、吸収性の物質、及び反射性の物質のグループから選択された硬化するコーティング材が、前記デバイスの外側表面上の特定の場所に選択的に配置され、
−前記特定の場所は、前記第1の波長をもつ光が側端部に遭遇する位置の中から選択されていることを特徴とする、波長変換型の発光デバイス。 - 前記波長変換物質が、自立型の波長変換体に含まれていることを特徴とする、請求項10に記載の波長変換型の発光デバイス。
- 前記自立型の波長変換体が、光透過性の接着材を用いて前記発光ダイオードに接着され、前記接着材の側面が前記コーティング材を具備していることを特徴とする、請求項11に記載の波長変換型の発光デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08159397 | 2008-07-01 | ||
EP08159397.2 | 2008-07-01 | ||
PCT/IB2009/052713 WO2010001306A1 (en) | 2008-07-01 | 2009-06-24 | Wavelength converted light emitting diode with reduced emission of unconverted light |
Publications (2)
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JP2011526739A true JP2011526739A (ja) | 2011-10-13 |
JP5616886B2 JP5616886B2 (ja) | 2014-10-29 |
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JP2011515704A Active JP5616886B2 (ja) | 2008-07-01 | 2009-06-24 | 非変換光の発光が少ない、波長を変換する発光ダイオード |
Country Status (8)
Country | Link |
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US (1) | US8338846B2 (ja) |
EP (1) | EP2294634B1 (ja) |
JP (1) | JP5616886B2 (ja) |
KR (1) | KR101596001B1 (ja) |
CN (1) | CN102084507B (ja) |
RU (1) | RU2497235C2 (ja) |
TW (1) | TWI531080B (ja) |
WO (1) | WO2010001306A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013197450A (ja) * | 2012-03-22 | 2013-09-30 | Stanley Electric Co Ltd | 発光装置およびその製造方法 |
JP2014063832A (ja) * | 2012-09-20 | 2014-04-10 | Stanley Electric Co Ltd | 半導体発光装置およびその製造方法 |
JP2014072212A (ja) * | 2012-09-27 | 2014-04-21 | Toyoda Gosei Co Ltd | 発光装置及びその製造方法 |
JP2015507371A (ja) * | 2012-02-10 | 2015-03-05 | コーニンクレッカ フィリップス エヌ ヴェ | チップスケールのledパッケージを形成する成型レンズ及び該成型レンズを製造する方法 |
JP2015070132A (ja) * | 2013-09-30 | 2015-04-13 | 日亜化学工業株式会社 | 発光装置の製造方法および発光装置 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012033823A (ja) * | 2010-08-02 | 2012-02-16 | Stanley Electric Co Ltd | 発光装置およびその製造方法 |
JP5680472B2 (ja) * | 2011-04-22 | 2015-03-04 | シチズンホールディングス株式会社 | 半導体発光装置の製造方法 |
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KR20110025994A (ko) | 2011-03-14 |
TW201007994A (en) | 2010-02-16 |
RU2497235C2 (ru) | 2013-10-27 |
JP5616886B2 (ja) | 2014-10-29 |
EP2294634A1 (en) | 2011-03-16 |
KR101596001B1 (ko) | 2016-03-07 |
TWI531080B (zh) | 2016-04-21 |
CN102084507B (zh) | 2016-01-20 |
RU2011103442A (ru) | 2012-08-10 |
US8338846B2 (en) | 2012-12-25 |
US20110084302A1 (en) | 2011-04-14 |
CN102084507A (zh) | 2011-06-01 |
EP2294634B1 (en) | 2020-08-05 |
WO2010001306A1 (en) | 2010-01-07 |
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