JP2011512459A - プラズマ処理装置、及び大気圧グロー放電電極構成を使用して基板を処理するための方法 - Google Patents
プラズマ処理装置、及び大気圧グロー放電電極構成を使用して基板を処理するための方法 Download PDFInfo
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Abstract
Description
g*d≦1.0mm2
を満足する場合、処理された基板7又は処理された基板6及び7は、水蒸気透過率(WVTR)などの優れたバリア特性、優れた粗さ特性を有することが分かった。この処理方法を使用して層を堆積させる場合、堆積したバリアも同じく小さい炭素濃度を有している。この新しい方法によれば、炭素濃度が0.5重量%未満、さらには0.1重量%未満のバリアを備えた新しい滑らかな製品を提供することができる。
Aは、カルシウム厚さとODの間のスケーリング因子であり、M[H2O]及びM[Ca]は、それぞれ18単位及び40.1単位の値の水及びCaのモル質量であり、Caはカルシウムの密度であり、LCa及びWCaは、堆積したCaの長さ及び幅であり、Ls及びWsは、内部境界によって画定される透過領域の長さ及び幅であり、d(OD)/dtは、測定された光吸光度対時間の勾配である。
Claims (18)
- 基板(6、7)を処理するためのプラズマ処理装置であって、少なくとも2つの対向電極(2、3)と、前記少なくとも2つの対向電極(2、3)の間の処理空間(5)とを備えており、誘電体バリア(6、7;2a、3a)が、前記少なくとも2つの対向電極(2、3)の間の前記処理空間(5)に設けられているとともに動作中には前記基板(6、7)を備えており、前記少なくとも2つの対向電極(2、3)が、前記処理空間(5)に大気圧グロー放電プラズマを生成するためのプラズマ制御ユニット(4)に接続され、ギャップ距離(g)が、動作中における前記少なくとも2つの対向電極(2、3)の間のギャップの前記処理空間(5)の自由距離であり、総誘電体距離(d)が、前記誘電体バリア(6、7;2a、3a)の誘電体厚さであり、また、前記プラズマ制御ユニット(4)が、ギャップ距離(g)と総誘電体距離(d)の積の値を1.0mm2以下になるように制御するようになされたプラズマ処理装置。
- ギャップ距離(g)と総誘電体距離(d)の前記積が0.5mm2以下である、請求項1に記載のプラズマ処理装置。
- ギャップ距離(g)と総誘電体距離(d)の前記積が0.2mm2以下、例えば0.1mm2以下である、請求項1に記載のプラズマ処理装置。
- 前記総誘電体距離(d)が1mm以下である、請求項1から3までのいずれか一項に記載のプラズマ処理装置。
- 前記ギャップ距離(g)が1mm以下、例えば0.8mm以下である、請求項1から4までのいずれか一項に記載のプラズマ処理装置。
- 前記少なくとも2つの対向電極(2、3)のうちの1つ又は複数がロール状の電極である、請求項1から5までのいずれかに記載のプラズマ処理装置。
- 基板(6、7)をプラズマ処理するための方法であって、少なくとも2つの対向電極(2、3)と、前記少なくとも2つの対向電極(2、3)の間の処理空間(5)の誘電体バリア(6、7;2a、3a)とを使用して、動作中に前記基板(6、7)が存在している前記処理空間(5)に大気圧グロー放電プラズマを生成するステップを含み、
ギャップ距離(g)が、動作中における前記少なくとも2つの対向電極(2、3)の間のギャップの前記処理空間(5)の自由距離であり、総誘電体距離(d)が前記誘電体バリア(6、7;2a、3a)の誘電体厚さであり、また、
ギャップ距離(g)と総誘電体距離(d)の積が1.0mm2以下の値になるように制御される方法。 - ギャップ距離(g)と総誘電体距離(d)の前記積が0.5mm2以下である、請求項7に記載の方法。
- ギャップ距離(g)と総誘電体距離(d)の前記積が0.2mm2以下、例えば0.1mm2以下である、請求項7に記載の方法。
- 前記総誘電体距離(d)が1mm以下である、請求項7から9までのいずれか一項に記載の方法。
- 前記ギャップ距離(g)が1mm以下、例えば0.8mm以下である、請求項7から10までのいずれか一項に記載の方法。
- ポリマー基板の上に1つ又は複数の無機バリア層が堆積され、前記1つ又は複数の無機バリア層の一番上の面が、前記1つ又は複数の無機バリア層の厚さ又は量に無関係に、前記基板の表面粗さより最大20%大きい表面粗さを有する、請求項7から11までのいずれか一項に記載の方法。
- ポリマー基板の上に1つ又は複数の無機バリア層が堆積され、前記1つ又は複数の無機バリア層が0.1重量%未満の炭素濃度を有する、請求項7から11までのいずれかに記載の方法。
- 前記少なくとも2つの対向電極(2、3)のうちの1つがロール状の電極である、請求項7から13までのいずれかに記載の方法。
- 前記処理空間(5)の中で基板(6、7)の上に材料の層を堆積させるための請求項1から5までのいずれか一項に記載のプラズマ処理装置の使用。
- 50nm以上の無機バリアと、2.0nm未満の表面粗さRaを有する頂部表面無機層とを備えた有機バリア・スタック層。
- 50nm以上の無機バリアと、1.8nm未満の表面粗さRaを有する頂部表面無機層とを備えた有機バリア・スタック層。
- 0.1重量%未満の炭素濃度を有する、請求項16又は17に記載の有機バリア・スタック層。
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EP08151765.8 | 2008-02-21 | ||
EP08151765 | 2008-02-21 | ||
EP08165019 | 2008-09-24 | ||
EP08165019.4 | 2008-09-24 | ||
EP08168741.0 | 2008-11-10 | ||
EP08168741 | 2008-11-10 | ||
PCT/NL2009/050057 WO2009104957A1 (en) | 2008-02-21 | 2009-02-10 | Plasma treatment apparatus and method for treatment of a substrate with atmospheric pressure glow discharge electrode configuration |
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JP2011512459A true JP2011512459A (ja) | 2011-04-21 |
JP5725865B2 JP5725865B2 (ja) | 2015-05-27 |
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US (1) | US20110014424A1 (ja) |
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- 2009-02-10 WO PCT/NL2009/050057 patent/WO2009104957A1/en active Application Filing
- 2009-02-10 JP JP2010547580A patent/JP5725865B2/ja active Active
- 2009-02-10 EP EP09713583A patent/EP2245647B1/en not_active Not-in-force
- 2009-02-10 EP EP12175744.7A patent/EP2528082A3/en not_active Withdrawn
- 2009-02-10 US US12/735,821 patent/US20110014424A1/en not_active Abandoned
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2014519558A (ja) * | 2011-06-16 | 2014-08-14 | フジフィルム・マニュファクチュアリング・ヨーロッパ・ベスローテン・フエンノートシャップ | フレキシブル基材上にバリヤー層を製造するための方法および機器 |
JP2014527257A (ja) * | 2011-06-28 | 2014-10-09 | エムティーアイエックス リミテッド | 複数の結合されたエネルギー源を用いた材料の表面処理方法及び装置。 |
US9605376B2 (en) | 2011-06-28 | 2017-03-28 | Mtix Ltd. | Treating materials with combined energy sources |
JP2014534336A (ja) * | 2011-10-06 | 2014-12-18 | フジフィルム マニュファクチャリング ユーロプ ビー.ブイ. | 大気圧プラズマ法によるコーティング作製方法 |
Also Published As
Publication number | Publication date |
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EP2245647A1 (en) | 2010-11-03 |
EP2245647B1 (en) | 2012-08-01 |
EP2528082A3 (en) | 2014-11-05 |
US20110014424A1 (en) | 2011-01-20 |
JP5725865B2 (ja) | 2015-05-27 |
EP2528082A2 (en) | 2012-11-28 |
WO2009104957A1 (en) | 2009-08-27 |
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