JP2011503891A - 波長変換を備える側面放射装置 - Google Patents
波長変換を備える側面放射装置 Download PDFInfo
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- JP2011503891A JP2011503891A JP2010533699A JP2010533699A JP2011503891A JP 2011503891 A JP2011503891 A JP 2011503891A JP 2010533699 A JP2010533699 A JP 2010533699A JP 2010533699 A JP2010533699 A JP 2010533699A JP 2011503891 A JP2011503891 A JP 2011503891A
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
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- 239000000853 adhesive Substances 0.000 description 2
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- 229910052782 aluminium Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
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- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
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- 229920002313 fluoropolymer Polymers 0.000 description 1
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- 239000011521 glass Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
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- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
Description
Claims (12)
- 基板と、前記基板から間隔をあけて配設され、前記基板の延在部に沿って延在する反射器と、前記基板上に配設され、前記反射器に面する少なくとも1つの発光ダイオードとを有し、前記基板及び前記反射器が、前記少なくとも1つの発光ダイオードによって放射される光のための導波領域の境界を定める側面放射発光装置であって、前記装置において、前記導波領域の横方向縁端部に波長変換材料が配設される側面放射発光装置。
- 前記波長変換材料が、前記反射器と前記基板との間に配設される請求項1に記載の発光装置。
- 前記導波領域と前記波長変換材料との間に第1ダイクロイックミラーが配設される請求項1又は2に記載の発光装置。
- 前記波長変換材料が、第2ダイクロイックミラーと前記導波領域との間に配設される請求項1乃至3のいずれか一項に記載の発光装置。
- 前記波長変換材料が、前記導波領域の2つの互いに対向する側部にある請求項1乃至4のいずれか一項に記載の発光装置。
- 前記基板が反射層を有する請求項1乃至5のいずれか一項に記載の発光装置。
- 前記導波領域の厚さが、前記波長変換材料に向かう方向に沿って漸増する請求項1乃至6のいずれか一項に記載の発光装置。
- 前記波長変換材料の厚さが、前記導波領域からの距離とともに漸増する請求項1乃至7のいずれか一項に記載の発光装置。
- 前記波長変換材料が、前記発光ダイオードの横方向縁端部の外側に配設される請求項1乃至8のいずれか一項に記載の発光装置。
- 前記波長変換材料の少なくとも一部が、前記少なくとも1つの発光ダイオードの一部の上に配設される請求項1乃至8のいずれか一項に記載の発光装置。
- 前記波長変換材料が、前記発光ダイオードによって放射される光を第1変換波長帯に変換するための第1波長変換組成物を、第1領域に有し、前記発光ダイオードによって放射される光を第2変換波長帯に変換するための第2波長変換組成物を、第2領域に有する請求項1乃至10のいずれか一項に記載の発光装置。
- 前記導波領域が、透明な固体材料を有する請求項1乃至11のいずれか一項に記載の発光装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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EP07121079 | 2007-11-20 | ||
EP07121079.3 | 2007-11-20 | ||
PCT/IB2008/054756 WO2009066207A1 (en) | 2007-11-20 | 2008-11-13 | Side emitting device with wavelength conversion |
Publications (2)
Publication Number | Publication Date |
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JP2011503891A true JP2011503891A (ja) | 2011-01-27 |
JP5666306B2 JP5666306B2 (ja) | 2015-02-12 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010533699A Active JP5666306B2 (ja) | 2007-11-20 | 2008-11-13 | 波長変換を備える側面放射装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US8247831B2 (ja) |
EP (1) | EP2212928B1 (ja) |
JP (1) | JP5666306B2 (ja) |
KR (1) | KR20100093570A (ja) |
CN (1) | CN101868865B (ja) |
RU (1) | RU2489775C2 (ja) |
TW (1) | TWI451045B (ja) |
WO (1) | WO2009066207A1 (ja) |
Cited By (8)
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JP2013143430A (ja) * | 2012-01-10 | 2013-07-22 | Citizen Holdings Co Ltd | 半導体発光装置及びそれを用いた照明装置 |
JP2013149711A (ja) * | 2012-01-18 | 2013-08-01 | Citizen Holdings Co Ltd | 半導体発光装置 |
JP2014182937A (ja) * | 2013-03-19 | 2014-09-29 | Stanley Electric Co Ltd | 半導体発光装置とその製造方法 |
JP2016536798A (ja) * | 2013-09-10 | 2016-11-24 | フィリップス ライティング ホールディング ビー ヴィ | 発光デバイス |
JP2017506820A (ja) * | 2014-01-28 | 2017-03-09 | フィリップス ライティング ホールディング ビー ヴィ | 発光素子 |
JP2017098398A (ja) * | 2015-11-24 | 2017-06-01 | 豊田合成株式会社 | 発光装置および照明装置 |
JP2017157611A (ja) * | 2016-02-29 | 2017-09-07 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
US11946607B2 (en) | 2019-03-22 | 2024-04-02 | Lg Innotek Co., Ltd. | Lighting module and lighting device comprising same |
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CN102187485B (zh) * | 2008-10-15 | 2013-07-03 | 株式会社小糸制作所 | 发光模块、发光模块的制造方法及灯具单元 |
US20120051028A1 (en) * | 2009-05-07 | 2012-03-01 | Koninklijke Philips Electronics N.V. | Lighting device |
KR101686079B1 (ko) | 2010-12-27 | 2016-12-13 | 삼성전자주식회사 | 깊이 영상 생성 장치 및 방법 |
WO2013094590A1 (ja) * | 2011-12-20 | 2013-06-27 | スタンレー電気株式会社 | 発光装置、車両用灯具及び車両 |
DE102012102114B4 (de) * | 2012-03-13 | 2021-09-16 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierendes Halbleiterbauteil, Beleuchtungsvorrichtung und Anzeigevorrichtung |
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KR101328073B1 (ko) * | 2012-06-28 | 2013-11-13 | 서종욱 | 횡형 발광소자 및 이를 적용하는 발광 시트 |
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JP6286026B2 (ja) | 2013-04-25 | 2018-02-28 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 発光ダイオードコンポーネント |
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2008
- 2008-11-13 CN CN2008801168534A patent/CN101868865B/zh active Active
- 2008-11-13 WO PCT/IB2008/054756 patent/WO2009066207A1/en active Application Filing
- 2008-11-13 JP JP2010533699A patent/JP5666306B2/ja active Active
- 2008-11-13 RU RU2010125150/28A patent/RU2489775C2/ru active
- 2008-11-13 KR KR1020107013533A patent/KR20100093570A/ko not_active Application Discontinuation
- 2008-11-13 EP EP08851397.3A patent/EP2212928B1/en active Active
- 2008-11-13 US US12/742,710 patent/US8247831B2/en active Active
- 2008-11-17 TW TW097144408A patent/TWI451045B/zh active
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Also Published As
Publication number | Publication date |
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KR20100093570A (ko) | 2010-08-25 |
CN101868865A (zh) | 2010-10-20 |
RU2489775C2 (ru) | 2013-08-10 |
EP2212928A1 (en) | 2010-08-04 |
RU2010125150A (ru) | 2011-12-27 |
US8247831B2 (en) | 2012-08-21 |
TW200940903A (en) | 2009-10-01 |
JP5666306B2 (ja) | 2015-02-12 |
CN101868865B (zh) | 2012-08-22 |
US20110018020A1 (en) | 2011-01-27 |
TWI451045B (zh) | 2014-09-01 |
WO2009066207A1 (en) | 2009-05-28 |
EP2212928B1 (en) | 2016-06-29 |
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