JP2011258813A - 太陽電池素子の電極焼成用焼成炉、太陽電池素子の製造方法及び太陽電池素子 - Google Patents
太陽電池素子の電極焼成用焼成炉、太陽電池素子の製造方法及び太陽電池素子 Download PDFInfo
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- 238000010304 firing Methods 0.000 title claims abstract description 88
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000001354 calcination Methods 0.000 title abstract 5
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 238000010438 heat treatment Methods 0.000 claims abstract description 72
- 238000001816 cooling Methods 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000000605 extraction Methods 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 abstract description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 19
- 229910052751 metal Inorganic materials 0.000 abstract description 10
- 239000002184 metal Substances 0.000 abstract description 10
- 239000002003 electrode paste Substances 0.000 abstract description 7
- 230000006866 deterioration Effects 0.000 abstract description 4
- 230000003467 diminishing effect Effects 0.000 abstract 1
- 230000002708 enhancing effect Effects 0.000 abstract 1
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 238000009792 diffusion process Methods 0.000 description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 239000002253 acid Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000002966 varnish Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
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- 230000002950 deficient Effects 0.000 description 1
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- 229910001873 dinitrogen Inorganic materials 0.000 description 1
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- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000009740 moulding (composite fabrication) Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
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- F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
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- F27B9/24—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path tunnel furnace being carried by a conveyor
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Abstract
【効果】特にワイヤー式焼成炉を用いて電極ペーストの焼成を行う際、加熱部雰囲気温度やアルミニウムペースト層の温度に近づけるために、ワイヤーを加熱部雰囲気温度とほぼ等しい温度に焼成している。これにより、ワイヤー上の導電性ペーストの金属成分の堆積物に電極が傷つけられることによる歩留まり低下を抑え、ワイヤー式焼成炉の連続使用が可能となる。更に、ワイヤーの温度が低いことによる基板面内の焼成むらを小さくすることで、特性低下も抑えることができる。また、メッシュベルト式焼成炉などと比較してスループットを大きくすることができる。
【選択図】なし
Description
請求項1:
導電性ペーストを塗布した基板を搬送するための搬送部材、該基板を加熱して該導電性ペーストを焼成するための加熱部、及び加熱した基板を冷却する冷却部を具備する焼成炉であって、上記搬送部材を加熱するための加熱手段を設けたことを特徴とする太陽電池素子の電極焼成用焼成炉。
請求項2:
加熱部雰囲気と搬送部材の温度差が0〜200℃である請求項1記載の焼成炉。
請求項3:
搬送部材が、少なくとも2本のワイヤーを炉の長手方向に沿って互いに平行かつ水平に移動可能に配置してなり、該ワイヤー状に基板を載置して搬送する部材である請求項1又は2記載の焼成炉。
請求項4:
搬送部材が、ウォーキングビーム形式である請求項1乃至3のいずれか1項記載の焼成炉。
請求項5:
搬送部材を加熱するための加熱手段が、電気的手段である請求項1乃至4のいずれか1項記載の焼成炉。
請求項6:
半導体基板にpn接合を形成した後、該半導体基板の受光面及び非受光面上に導電性ペーストを塗布・焼成して電力取り出し用電極を形成する工程を含む太陽電池素子の製造方法であって、上記導電性ペーストの焼成を請求項1乃至5のいずれか1項記載の焼成炉を用いて行うことを特徴とする太陽電池素子の製造方法。
請求項7:
請求項6記載の製造方法によって得られた太陽電池素子。
ボロンがドープされ、厚さ0.2mmにスライスして作製された比抵抗が約1Ω・cmのp型の多結晶シリコンからなるp型シリコン基板に外径加工を行うことによって、一辺15cmの正方形の板状とした。そして、このp型シリコン基板をフッ硝酸溶液中に15秒間浸漬させてダメージエッチングし、さらに2質量%のKOHと2質量%のイソプロピルアルコール(IPA)を含む70℃の溶液で5分間化学エッチングした後に純水で洗浄し、乾燥させることで、p型シリコン基板表面にテクスチャ構造を形成した。
2 基板
3 n型不純物層
4 反射防止膜
5 裏面電極
6 BSF層
7 表面集電極
11,21,31 基板
12 メッシュベルト
13,23,36 加熱部
14,24,37 冷却部
34,35 ロール
15,25 駆動部
16,26 ローラー
17 洗浄槽
22 ワイヤー式搬送部材
32 固定ワイヤー(固定ビーム)
33 可動ワイヤー(可動ビーム)
Claims (7)
- 導電性ペーストを塗布した基板を搬送するための搬送部材、該基板を加熱して該導電性ペーストを焼成するための加熱部、及び加熱した基板を冷却する冷却部を具備する焼成炉であって、上記搬送部材を加熱するための加熱手段を設けたことを特徴とする太陽電池素子の電極焼成用焼成炉。
- 加熱部雰囲気と搬送部材の温度差が0〜200℃である請求項1記載の焼成炉。
- 搬送部材が、少なくとも2本のワイヤーを炉の長手方向に沿って互いに平行かつ水平に移動可能に配置してなり、該ワイヤー状に基板を載置して搬送する部材である請求項1又は2記載の焼成炉。
- 搬送部材が、ウォーキングビーム形式である請求項1乃至3のいずれか1項記載の焼成炉。
- 搬送部材を加熱するための加熱手段が、電気的手段である請求項1乃至4のいずれか1項記載の焼成炉。
- 半導体基板にpn接合を形成した後、該半導体基板の受光面及び非受光面上に導電性ペーストを塗布・焼成して電力取り出し用電極を形成する工程を含む太陽電池素子の製造方法であって、上記導電性ペーストの焼成を請求項1乃至5のいずれか1項記載の焼成炉を用いて行うことを特徴とする太陽電池素子の製造方法。
- 請求項6記載の製造方法によって得られた太陽電池素子。
Priority Applications (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010133084A JP5477180B2 (ja) | 2010-06-10 | 2010-06-10 | 太陽電池素子の電極焼成用焼成炉、太陽電池素子の製造方法及び太陽電池素子 |
SG2012090445A SG186241A1 (en) | 2010-06-10 | 2011-06-03 | Firing furnace for firing electrode of solar cell element, method for manufacturing solar cell element, and solar cell element |
US13/703,261 US20130133738A1 (en) | 2010-06-10 | 2011-06-03 | Firing furnace for firing electrode of solar cell element, method for manufacturing solar cell element, and solar cell element |
CN201180036171.4A CN103026480B (zh) | 2010-06-10 | 2011-06-03 | 用于烧制太阳能电池元件电极的燃烧炉、制造太阳能电池元件的方法和太阳能电池元件 |
KR1020137000148A KR101766315B1 (ko) | 2010-06-10 | 2011-06-03 | 태양전지 소자의 전극 소성용 소성로, 태양전지 소자의 제조방법 및 태양전지 소자 |
EP11792355.7A EP2581933B1 (en) | 2010-06-10 | 2011-06-03 | Firing furnace for firing electrode of solar cell element, method for manufacturing solar cell element |
RU2012156276/28A RU2562701C2 (ru) | 2010-06-10 | 2011-06-03 | Печь для вжигания электрода солнечного элемента, способ изготовления солнечного элемента и солнечный элемент |
PCT/JP2011/062755 WO2011155398A1 (ja) | 2010-06-10 | 2011-06-03 | 太陽電池素子の電極焼成用焼成炉、太陽電池素子の製造方法及び太陽電池素子 |
MYPI2012005294A MY163740A (en) | 2010-06-10 | 2011-06-03 | Firing furnace for firing electrode of solar cell element, method for manufacturing solar cell element, and solar cell element |
AU2011262963A AU2011262963B2 (en) | 2010-06-10 | 2011-06-03 | Firing furnace for firing electrode of solar cell element, method for manufacturing solar cell element, and solar cell element |
TW100120171A TWI503514B (zh) | 2010-06-10 | 2011-06-09 | A sintering furnace for sintering a solar cell element, a method for manufacturing a solar cell element, and a solar cell element |
US15/821,052 US11616163B2 (en) | 2010-06-10 | 2017-11-22 | Firing furnace for firing electrode of solar cell element, method for manufacturing solar cell element, and solar cell element |
Applications Claiming Priority (1)
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JP2010133084A JP5477180B2 (ja) | 2010-06-10 | 2010-06-10 | 太陽電池素子の電極焼成用焼成炉、太陽電池素子の製造方法及び太陽電池素子 |
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JP2011258813A true JP2011258813A (ja) | 2011-12-22 |
JP5477180B2 JP5477180B2 (ja) | 2014-04-23 |
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JP2010133084A Active JP5477180B2 (ja) | 2010-06-10 | 2010-06-10 | 太陽電池素子の電極焼成用焼成炉、太陽電池素子の製造方法及び太陽電池素子 |
Country Status (11)
Country | Link |
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US (2) | US20130133738A1 (ja) |
EP (1) | EP2581933B1 (ja) |
JP (1) | JP5477180B2 (ja) |
KR (1) | KR101766315B1 (ja) |
CN (1) | CN103026480B (ja) |
AU (1) | AU2011262963B2 (ja) |
MY (1) | MY163740A (ja) |
RU (1) | RU2562701C2 (ja) |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014054350A1 (ja) | 2012-10-04 | 2014-04-10 | 信越化学工業株式会社 | 太陽電池セルの製造方法 |
JP2015152231A (ja) * | 2014-02-14 | 2015-08-24 | 日本碍子株式会社 | 熱処理炉 |
WO2024106857A1 (ko) * | 2022-11-14 | 2024-05-23 | 주식회사 한화 | 솔더링 장치 및 이를 포함하는 태빙 장치 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101644700B1 (ko) * | 2013-09-24 | 2016-08-01 | 주식회사 엘지화학 | 헤테로환 화합물 및 이를 포함하는 유기 발광 소자 |
CN104124306B (zh) * | 2014-07-11 | 2016-05-18 | 中国电子科技集团公司第四十八研究所 | 喷墨打印制备光伏电池超细栅电极的传送机构及制备方法 |
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003124609A (ja) * | 2001-10-11 | 2003-04-25 | Matsushita Electric Ind Co Ltd | 補助板を用いた熱処理方法 |
JP2003292154A (ja) * | 2002-04-04 | 2003-10-15 | Noritake Co Ltd | 厚膜印刷基板用熱処理装置および搬送ローラ |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3876485A (en) * | 1972-01-18 | 1975-04-08 | Sandvik Conveyor Inc | Method and apparatus of producing plastic coated fabric conveyor belting |
DE4114639A1 (de) * | 1991-05-04 | 1992-12-03 | Bosch Gmbh Robert | Vorrichtung zum einbrennen von bedruckten substraten |
JPH0593587A (ja) * | 1991-10-03 | 1993-04-16 | Saamotetsukusu:Kk | 加熱炉 |
JPH0618178A (ja) | 1992-07-01 | 1994-01-25 | Murata Mfg Co Ltd | 連続式焼成炉 |
JPH08162446A (ja) * | 1994-11-30 | 1996-06-21 | Sharp Corp | 連続加熱炉及びこれを用いた太陽電池製造方法 |
US6117266A (en) * | 1997-12-19 | 2000-09-12 | Interuniversifair Micro-Elektronica Cenirum (Imec Vzw) | Furnace for continuous, high throughput diffusion processes from various diffusion sources |
RU2139601C1 (ru) * | 1998-12-04 | 1999-10-10 | ООО Научно-производственная фирма "Кварк" | Способ изготовления солнечного элемента с n+-p-p+ структурой |
JP4198830B2 (ja) * | 1999-06-22 | 2008-12-17 | 日本曹達株式会社 | 成膜装置 |
AU7073100A (en) * | 1999-08-23 | 2001-03-19 | Radiant Technology Corporation | Continuous-conduction wafer bump reflow system |
JP2001133160A (ja) * | 1999-11-02 | 2001-05-18 | Mitsubishi Electric Corp | コンベア炉 |
JP4046492B2 (ja) * | 2000-10-23 | 2008-02-13 | シャープ株式会社 | 太陽電池セルの製造装置 |
US6512206B1 (en) * | 2002-01-02 | 2003-01-28 | Mrl Industries | Continuous process furnace |
US6705457B2 (en) * | 2002-04-01 | 2004-03-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Transport device and method of transporting to-be-processed elements through a high-temperature zone |
US7153542B2 (en) * | 2002-08-06 | 2006-12-26 | Tegal Corporation | Assembly line processing method |
JP2004286425A (ja) * | 2003-03-06 | 2004-10-14 | Ngk Insulators Ltd | 線材を用いた搬送機構並びにそれを使用した熱処理炉及び熱処理方法 |
JP2005016906A (ja) * | 2003-06-27 | 2005-01-20 | Kyocera Corp | 焼成炉およびこれを用いた太陽電池素子の製造方法 |
US7256374B2 (en) * | 2004-05-17 | 2007-08-14 | Colin Regan | Induction heating apparatus for controlling the welding parameter of temperature for heat treating a section of piping |
JP2006185974A (ja) * | 2004-12-27 | 2006-07-13 | Kyocera Corp | 焼成炉、及びこれを用いた被処理体の焼成方法、並びに太陽電池素子の製造方法 |
JP2006245100A (ja) | 2005-03-01 | 2006-09-14 | Kyocera Corp | 焼成炉及びこれを用いた被処理体の焼成方法並びに太陽電池素子の製造方法 |
JP2006310792A (ja) | 2005-03-29 | 2006-11-09 | Kyocera Corp | 加熱炉及びこれを用いた太陽電池素子の製造方法 |
ITUD20050196A1 (it) * | 2005-11-17 | 2007-05-18 | Gisulfo Baccini | Apparecchiatura per la produzione di celle fotovoltaiche sottili in silicio e di circuiti elettronici in materiale rigido e flessibile |
JP4977361B2 (ja) | 2005-12-07 | 2012-07-18 | 光洋サーモシステム株式会社 | 連続焼成炉 |
JP4908906B2 (ja) * | 2006-04-25 | 2012-04-04 | 光洋サーモシステム株式会社 | 熱処理装置 |
US8571396B2 (en) * | 2006-06-26 | 2013-10-29 | Tp Solar, Inc. | Rapid thermal firing IR conveyor furnace having high intensity heating section |
US7805064B2 (en) * | 2006-06-26 | 2010-09-28 | TP Solar, Inc. (Corporation of CA, USA) | Rapid thermal firing IR conveyor furnace having high intensity heating section |
AU2007289892B2 (en) | 2006-08-31 | 2012-09-27 | Shin-Etsu Chemical Co., Ltd. | Method for forming semiconductor substrate and electrode, and method for manufacturing solar battery |
US20100071761A1 (en) * | 2006-09-28 | 2010-03-25 | Kyocera Corporation | Solar Cell Element and Method for Manufacturing the Same |
JP5127273B2 (ja) * | 2007-03-27 | 2013-01-23 | 京セラ株式会社 | 太陽電池素子の製造方法 |
JP4738372B2 (ja) * | 2007-04-03 | 2011-08-03 | 株式会社ノリタケカンパニーリミテド | ウオーキングビーム式熱処理装置 |
WO2009052141A1 (en) * | 2007-10-18 | 2009-04-23 | E. I. Du Pont De Nemours And Company | Conductive compositions and processes for use in the manufacture of semiconductor devices |
US8759144B2 (en) * | 2007-11-02 | 2014-06-24 | Alliance For Sustainable Energy, Llc | Fabrication of contacts for silicon solar cells including printing burn through layers |
JP4870709B2 (ja) * | 2008-03-27 | 2012-02-08 | 信越化学工業株式会社 | 熱処理装置 |
CN102356458B (zh) * | 2009-04-16 | 2014-10-15 | Tp太阳能公司 | 利用极低质量运送***的扩散炉及晶圆快速扩散加工处理的方法 |
-
2010
- 2010-06-10 JP JP2010133084A patent/JP5477180B2/ja active Active
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2011
- 2011-06-03 WO PCT/JP2011/062755 patent/WO2011155398A1/ja active Application Filing
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003124609A (ja) * | 2001-10-11 | 2003-04-25 | Matsushita Electric Ind Co Ltd | 補助板を用いた熱処理方法 |
JP2003292154A (ja) * | 2002-04-04 | 2003-10-15 | Noritake Co Ltd | 厚膜印刷基板用熱処理装置および搬送ローラ |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014054350A1 (ja) | 2012-10-04 | 2014-04-10 | 信越化学工業株式会社 | 太陽電池セルの製造方法 |
JPWO2014054350A1 (ja) * | 2012-10-04 | 2016-08-25 | 信越化学工業株式会社 | 太陽電池セルの製造方法 |
US9614117B2 (en) | 2012-10-04 | 2017-04-04 | Shin-Etsu Chemical Co., Ltd. | Solar cell manufacturing method |
JP2015152231A (ja) * | 2014-02-14 | 2015-08-24 | 日本碍子株式会社 | 熱処理炉 |
WO2024106857A1 (ko) * | 2022-11-14 | 2024-05-23 | 주식회사 한화 | 솔더링 장치 및 이를 포함하는 태빙 장치 |
Also Published As
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KR20130098266A (ko) | 2013-09-04 |
EP2581933B1 (en) | 2017-11-15 |
MY163740A (en) | 2017-10-31 |
KR101766315B1 (ko) | 2017-08-08 |
TW201217733A (en) | 2012-05-01 |
EP2581933A1 (en) | 2013-04-17 |
RU2012156276A (ru) | 2014-07-20 |
SG186241A1 (en) | 2013-01-30 |
CN103026480B (zh) | 2016-05-04 |
AU2011262963A1 (en) | 2013-01-10 |
EP2581933A4 (en) | 2015-11-25 |
US20180108803A1 (en) | 2018-04-19 |
TWI503514B (zh) | 2015-10-11 |
JP5477180B2 (ja) | 2014-04-23 |
US11616163B2 (en) | 2023-03-28 |
AU2011262963B2 (en) | 2014-11-13 |
RU2562701C2 (ru) | 2015-09-10 |
WO2011155398A1 (ja) | 2011-12-15 |
US20130133738A1 (en) | 2013-05-30 |
CN103026480A (zh) | 2013-04-03 |
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