JP2011231356A - 金属基材の絶縁被膜方法、絶縁被膜金属基材、および、これを用いた半導体製造装置 - Google Patents
金属基材の絶縁被膜方法、絶縁被膜金属基材、および、これを用いた半導体製造装置 Download PDFInfo
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- metal oxide
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 84
- 239000002184 metal Substances 0.000 title claims abstract description 84
- 238000000576 coating method Methods 0.000 title claims abstract description 82
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 238000009413 insulation Methods 0.000 title abstract description 15
- 239000011248 coating agent Substances 0.000 claims abstract description 66
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 33
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 33
- 239000011148 porous material Substances 0.000 claims abstract description 33
- 238000005470 impregnation Methods 0.000 claims abstract description 16
- 238000005507 spraying Methods 0.000 claims abstract description 13
- 230000001678 irradiating effect Effects 0.000 claims abstract description 10
- 229910000000 metal hydroxide Inorganic materials 0.000 claims abstract description 7
- 150000004692 metal hydroxides Chemical class 0.000 claims abstract description 7
- 238000007751 thermal spraying Methods 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 59
- 239000000463 material Substances 0.000 claims description 27
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000002245 particle Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 238000010894 electron beam technology Methods 0.000 claims description 8
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 7
- 239000002612 dispersion medium Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000010408 film Substances 0.000 description 23
- 230000000052 comparative effect Effects 0.000 description 22
- 238000007789 sealing Methods 0.000 description 16
- 239000000919 ceramic Substances 0.000 description 12
- 239000003795 chemical substances by application Substances 0.000 description 9
- 238000011282 treatment Methods 0.000 description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- MXRIRQGCELJRSN-UHFFFAOYSA-N O.O.O.[Al] Chemical compound O.O.O.[Al] MXRIRQGCELJRSN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- GFDKELMFCRQUSG-UHFFFAOYSA-N yttrium;trihydrate Chemical compound O.O.O.[Y] GFDKELMFCRQUSG-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/18—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
- C23C4/11—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249967—Inorganic matrix in void-containing component
- Y10T428/24997—Of metal-containing material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Coating By Spraying Or Casting (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Abstract
【解決手段】金属基材の絶縁被膜方法は、溶射工程(S1)、含浸工程(S2)およびビーム照射工程(S3)を有する。溶射工程(S1)では、金属基材の表面に第1の金属酸化物を溶射して第1の絶縁被膜を形成する。含浸工程(S2)では、金属酸化物、金属酸化物の水和物または金属水酸化物を分散質としたゾルを第1の絶縁被膜の表面に形成された気孔に含浸させる。ビーム照射工程(S3)では、含浸工程(S2)後に、第1の絶縁被膜およびゾルに高エネルギービームを照射して第2の金属酸化物からなる第2の絶縁被膜を形成する。
【選択図】図1
Description
本発明の第1の実施形態に係る金属基材の絶縁被膜方法および絶縁被膜金属基材について、図1ないし図4を用いて説明する。
本発明の第1の実施形態に係る金属基材の絶縁被膜方法および絶縁被膜金属基材について、図5および図6を用いて説明する。図6は、第2の実施形態、比較例3および比較例4に係る絶縁被膜金属基材の表面のSEM写真および表面に形成された気孔数を示した表である。
上記の実施形態は、単なる例示であって、本発明は、これらに限定されることはない。例えば、上記の実施形態では、ゾル15の分散質として、金属酸化物の水和物(アルミナ水和物、イットリア水和物)を用いたが、金属酸化物(アルミナ、イットリウム)や金属水和物(水酸化アルミニウム(Al(OH)3)、水酸化イットリウム(Y(OH)3)を用いても良い。これらを用いても、電子ビームの照射により、金属酸化物からなる第2の絶縁被膜を形成できる。
Claims (11)
- 金属基材の表面に第1の金属酸化物を溶射して第1の絶縁被膜を形成する溶射工程と、
金属酸化物、金属酸化物の水和物または金属水酸化物を分散質としたゾルを前記第1の絶縁被膜の表面に形成された気孔に含浸させる含浸工程と、
前記含浸工程後に前記第1の絶縁被膜および前記ゾルに対して高エネルギービームを照射して第2の金属酸化物からなる第2の絶縁被膜を形成するビーム照射工程と、
を具備したことを特徴とする金属基材の絶縁被膜方法。 - 前記含浸工程は、真空下において前記ゾル中に前記第1の絶縁被膜が形成された金属基材を浸漬して、前記ゾルを前記第1の絶縁被膜の表面に形成された気孔に含浸させることを特徴とする請求項1に記載の金属基材の絶縁被膜方法。
- 前記分散質の平均粒径が1nm以上100nm以下であることを特徴とする請求項1または2に記載の金属基材の絶縁被膜方法。
- 前記ゾルの分散媒の主成分が水であることを特徴とする請求項1ないし3のいずれか一項に記載の金属基材の絶縁被膜方法。
- 前記第1の金属酸化物と前記第2の金属酸化物とが同一の材料であることを特徴とする請求項1ないし4のいずれか一項に記載の金属基材の絶縁被膜方法。
- 前記第1の金属酸化物および前記第2の金属酸化物がアルミナを主成分としていることを特徴とする請求項5に記載の金属基材の絶縁被膜方法。
- 前記第1の金属酸化物および前記第2の金属酸化物がイットリアを主成分としていることを特徴とする請求項5に記載の金属基材の絶縁被膜方法。
- 前記高エネルギービームが電子ビームであることを特徴とする請求項1ないし7のいずれか一項に記載の金属基材の絶縁被膜方法。
- 前記高エネルギービームがレーザビームであることを特徴とする請求項1ないし7のいずれか一項に記載の金属基材の絶縁被膜方法。
- 金属基材と、
前記金属基材の表面に第1の金属酸化物が溶射されて形成された第1の絶縁被膜と、
表面に形成された気孔に金属酸化物、金属酸化物の水和物または金属水酸化物を分散質としたゾルが含浸した前記第1の絶縁被膜に対して高エネルギービームが照射されて形成された第2の絶縁被膜と、
を具備したことを特徴とする絶縁被膜金属基材。 - 金属基材と、
前記金属基材の表面に第1の金属酸化物が溶射されて形成された第1の絶縁被膜と、
表面に形成された気孔に金属酸化物、金属酸化物の水和物または金属水酸化物を分散質としたゾルが含浸した前記第1の絶縁被膜に対して高エネルギービームが照射されて形成された第2の絶縁被膜と、
を有する絶縁被膜金属基材を具備したことを特徴とする半導体製造装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010100985A JP2011231356A (ja) | 2010-04-26 | 2010-04-26 | 金属基材の絶縁被膜方法、絶縁被膜金属基材、および、これを用いた半導体製造装置 |
KR1020127029063A KR20130006681A (ko) | 2010-04-26 | 2011-04-12 | 금속 기재의 절연 피막 방법, 절연 피막 금속 기재, 및 이것을 이용한 반도체 제조 장치 |
PCT/JP2011/002140 WO2011135786A1 (ja) | 2010-04-26 | 2011-04-12 | 金属基材の絶縁被膜方法、絶縁被膜金属基材、および、これを用いた半導体製造装置 |
US13/661,390 US20130052451A1 (en) | 2010-04-26 | 2012-10-26 | Insulation coating method for metal base, insulation coated metal base, and semiconductor manufacturing apparatus using the same |
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JP2010100985A JP2011231356A (ja) | 2010-04-26 | 2010-04-26 | 金属基材の絶縁被膜方法、絶縁被膜金属基材、および、これを用いた半導体製造装置 |
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JP2011231356A true JP2011231356A (ja) | 2011-11-17 |
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JP2010100985A Pending JP2011231356A (ja) | 2010-04-26 | 2010-04-26 | 金属基材の絶縁被膜方法、絶縁被膜金属基材、および、これを用いた半導体製造装置 |
Country Status (4)
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US (1) | US20130052451A1 (ja) |
JP (1) | JP2011231356A (ja) |
KR (1) | KR20130006681A (ja) |
WO (1) | WO2011135786A1 (ja) |
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JP6443380B2 (ja) * | 2016-04-12 | 2018-12-26 | 信越化学工業株式会社 | イットリウム系フッ化物溶射皮膜、及び該溶射皮膜を含む耐食性皮膜 |
JP6908973B2 (ja) * | 2016-06-08 | 2021-07-28 | 三菱重工業株式会社 | 遮熱コーティング、タービン部材、ガスタービン、ならびに遮熱コーティングの製造方法 |
JP6699701B2 (ja) * | 2018-10-16 | 2020-05-27 | 信越化学工業株式会社 | イットリウム系フッ化物溶射皮膜、該溶射皮膜を形成するための溶射材料、該溶射皮膜の形成方法、及び該溶射皮膜を含む耐食性皮膜 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61104062A (ja) * | 1984-10-23 | 1986-05-22 | Tsukishima Kikai Co Ltd | 金属またはセラミツク溶射被膜の封孔処理方法 |
JPH04266087A (ja) * | 1991-02-21 | 1992-09-22 | Matsushita Electric Works Ltd | 絶縁層付き金属基板およびその製造方法 |
JPH0570922A (ja) * | 1991-08-09 | 1993-03-23 | Koichi Moriya | 複合材の無機化合物による封孔処理法 |
JPH10306363A (ja) * | 1997-05-01 | 1998-11-17 | Amada Eng Center:Kk | セラミック溶射膜の封孔処理方法およびその装置 |
JP2003136853A (ja) * | 2001-10-29 | 2003-05-14 | Fuji Photo Film Co Ltd | 平版印刷版用支持体及び平版印刷版原版 |
JP2004190136A (ja) * | 2002-11-28 | 2004-07-08 | Tokyo Electron Ltd | プラズマ処理容器内部材 |
JP2005350309A (ja) * | 2004-06-11 | 2005-12-22 | Daiichi Kigensokagaku Kogyo Co Ltd | イットリアゾルの製造方法 |
-
2010
- 2010-04-26 JP JP2010100985A patent/JP2011231356A/ja active Pending
-
2011
- 2011-04-12 KR KR1020127029063A patent/KR20130006681A/ko active Search and Examination
- 2011-04-12 WO PCT/JP2011/002140 patent/WO2011135786A1/ja active Application Filing
-
2012
- 2012-10-26 US US13/661,390 patent/US20130052451A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61104062A (ja) * | 1984-10-23 | 1986-05-22 | Tsukishima Kikai Co Ltd | 金属またはセラミツク溶射被膜の封孔処理方法 |
JPH04266087A (ja) * | 1991-02-21 | 1992-09-22 | Matsushita Electric Works Ltd | 絶縁層付き金属基板およびその製造方法 |
JPH0570922A (ja) * | 1991-08-09 | 1993-03-23 | Koichi Moriya | 複合材の無機化合物による封孔処理法 |
JPH10306363A (ja) * | 1997-05-01 | 1998-11-17 | Amada Eng Center:Kk | セラミック溶射膜の封孔処理方法およびその装置 |
JP2003136853A (ja) * | 2001-10-29 | 2003-05-14 | Fuji Photo Film Co Ltd | 平版印刷版用支持体及び平版印刷版原版 |
JP2004190136A (ja) * | 2002-11-28 | 2004-07-08 | Tokyo Electron Ltd | プラズマ処理容器内部材 |
JP2005350309A (ja) * | 2004-06-11 | 2005-12-22 | Daiichi Kigensokagaku Kogyo Co Ltd | イットリアゾルの製造方法 |
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Publication number | Publication date |
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US20130052451A1 (en) | 2013-02-28 |
WO2011135786A1 (ja) | 2011-11-03 |
KR20130006681A (ko) | 2013-01-17 |
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