JP2011187944A - 半導体装置およびその駆動方法 - Google Patents
半導体装置およびその駆動方法 Download PDFInfo
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- JP2011187944A JP2011187944A JP2011025070A JP2011025070A JP2011187944A JP 2011187944 A JP2011187944 A JP 2011187944A JP 2011025070 A JP2011025070 A JP 2011025070A JP 2011025070 A JP2011025070 A JP 2011025070A JP 2011187944 A JP2011187944 A JP 2011187944A
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- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】フォトダイオード204は光の強度に応じて電気信号を生成する機能を有し、第1のトランジスタ205はゲートに電荷を蓄積し、蓄積された電荷を出力信号に変換する機能を有し、第2のトランジスタ207はフォトダイオード204から生成された電気信号を第1のトランジスタ205のゲートに転送し、かつ、第1のトランジスタ205のゲートに蓄積された電荷を保持する機能を有する。第1のトランジスタ205はバックゲートを有し、第2のトランジスタ207は、酸化物半導体層により形成されたチャネル形成領域を有する。
【選択図】図1
Description
本実施の形態では、開示する発明の一態様である半導体装置の一例について、図1を参照して説明する。
本実施の形態では、開示する発明の一態様である半導体装置の一例について、図2〜図3を参照して説明する。本実施の形態では、半導体装置が表示装置である例を示す。
本実施の形態は、図1に示した半導体装置の動作の一例、または図2、図3に示した表示装置の動作の一例について、図4を参照して説明する。図4は、図1、または図2、図3に示すフォトセンサ106の読み出し動作に関するタイミングチャートの一例である。
本実施の形態では、複数のフォトセンサを有する半導体装置の駆動方法の一例について説明する。
本実施の形態では、図1または図3におけるフォトセンサ106の回路構成の変形例について説明する。
本実施の形態では、開示する発明の一態様である半導体装置が有するトランジスタの一例について説明する。具体的には、図1または図3に示したトランジスタ207、図3に示したトランジスタ201のようにチャネル形成領域が酸化物半導体層により形成されたトランジスタの一例について説明する。
トランジスタ(例えば図1または図3に示すトランジスタ207)は、チャネル形成領域が酸化物半導体層によって構成されるトランジスタである。該酸化物半導体層は、トランジスタの電気的特性の変動要因となる水素、水分、水酸基又は水素化物などのドナーとなりうる不純物が徹底的に取り除かれ、可能な限り含まれる不純物の濃度が小さくされ、かつ不純物を排除するステップによって同時に減少してしまう酸化物半導体の主成分材料である酸素が供給されることによって、高純度化され、電気的にI型(真性)或いは実質的にI型(真性)化された酸化物半導体層である。なお、当該酸化物半導体層を構成する酸化物半導体は3.0eV以上のバンドギャップを有する。
チャネル形成領域が酸化物半導体層により形成されたトランジスタの作製方法の一例について、図8を参照して説明する。
101 画素回路
102 表示素子制御回路
103 フォトセンサ制御回路
104 画素
105 表示素子
106 フォトセンサ
107 表示素子駆動回路
108 表示素子駆動回路
109 フォトセンサ読み出し回路
110 フォトセンサ駆動回路
200 プリチャージ回路
201 トランジスタ
202 保持容量
203 液晶素子
204 フォトダイオード
205 トランジスタ
206 トランジスタ
207 トランジスタ
208 ゲート信号線
209 ゲート信号線
210 フォトダイオードリセット信号線
211 ゲート信号線
212 ビデオデータ信号線
213 フォトセンサ基準信号線
214 フォトセンサ出力信号線
215 ゲート信号線
216 トランジスタ
217 プリチャージ信号線
218 バックゲート信号線
301 信号
302 信号
303 信号
304 信号
305 信号
306 信号
307 信号
400 基板
402 ゲート絶縁層
403 保護絶縁層
410 トランジスタ
411 ゲート電極層
413 チャネル形成領域
416 酸化物絶縁層
420 トランジスタ
430 酸化物半導体膜
431 酸化物半導体層
441 バックゲート
415a ソース電極層又はドレイン電極層
415b ソース電極層又はドレイン電極層
501 信号
502 信号
503 信号
504 信号
505 信号
506 信号
507 信号
508 信号
509 信号
510 期間
511 期間
512 期間
513 期間
601 トランジスタ
801 信号
802 信号
803 信号
804 信号
805 信号
806 信号
807 信号
808 信号
809 信号
810 期間
811 期間
812 期間
813 期間
Claims (7)
- フォトダイオードと、第1のトランジスタと、第2のトランジスタと、を有し、
前記フォトダイオードは、光の強度に応じた電気信号を生成する機能を有し、
前記第1のトランジスタは、ゲートに電荷を蓄積する機能と、蓄積された電荷を出力信号に変換する機能と、を有し、
前記第2のトランジスタは、前記フォトダイオードから生成された電気信号を前記第1のトランジスタのゲートに転送する機能と、前記第1のトランジスタのゲートに蓄積された電荷を保持する機能と、を有し、
前記第1のトランジスタは、バックゲートを有し、
前記第2のトランジスタは、酸化物半導体層により形成されたチャネル形成領域を有することを特徴とする半導体装置。 - フォトダイオードと、第1のトランジスタと、第2のトランジスタと、第3のトランジスタと、を有し、
前記フォトダイオードは、光の強度に応じた電気信号を生成する機能を有し、
前記第1のトランジスタは、ゲートに電荷を蓄積する機能と、蓄積された電荷を出力信号に変換する機能と、を有し、
前記第2のトランジスタは、前記フォトダイオードから生成された電気信号を前記第1のトランジスタのゲートに転送する機能と、前記第1のトランジスタのゲートに蓄積された電荷を保持する機能と、を有し、
前記第3のトランジスタは、前記出力信号の読み出しを制御する機能を有し、
前記第1のトランジスタは、バックゲートを有し、
前記第2のトランジスタは、酸化物半導体層により形成されたチャネル形成領域を有することを特徴とする半導体装置。 - 請求項1又は請求項2において、前記出力信号の読み出しは、前記第1のトランジスタのゲートに蓄積された電荷を保持した状態で、前記第1のトランジスタのバックゲートの電位を変更しながら複数回行われることを特徴とする半導体装置。
- 第1のトランジスタと、第2のトランジスタと、を有するフォトセンサを有し、
前記フォトセンサはリセット動作、前記第1のトランジスタのゲートに電荷を蓄積する累積動作、および読み出し動作を行う機能を有し、
前記累積動作は、前記第2のトランジスタにより制御され、
前記第1のトランジスタは、バックゲートを有し、
1回の撮像を行う期間において、前記バックゲートの電位を変更しながら前記読み出し動作が複数回行われ、
前記第2のトランジスタは、酸化物半導体層により形成されたチャネル形成領域を有することを特徴とする半導体装置。 - 請求項4において、前記フォトセンサを複数有し、
前記複数のフォトセンサは、前記リセット動作を共通して行い、前記累積動作を共通して行い、前記読み出し動作を順次行う機能を有することを特徴とする半導体装置。 - フォトダイオードから生成された電気信号を第1のトランジスタのゲートに転送し、
第2のトランジスタを非導通状態として前記第1のトランジスタのゲートに蓄積された電荷を保持し、
前記第1のトランジスタのバックゲートの電位を第1の電位に設定し、前記第1のトランジスタのゲートに蓄積され保持された前記電荷を第1の出力信号に変換し、前記第1の出力信号を読み出し、
前記第1のトランジスタのバックゲートの電位を第2の電位に設定し、前記第1のトランジスタのゲートに蓄積され保持された前記電荷を第2の出力信号に変換し、前記第2の出力信号を読み出すことを特徴とする半導体装置の駆動方法。 - 請求項6において、前記第2のトランジスタは、酸化物半導体層により形成されたチャネル形成領域を有することを特徴とする半導体装置の駆動方法。
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TWI621251B (zh) | 2018-04-11 |
TW201640659A (zh) | 2016-11-16 |
CN102754209A (zh) | 2012-10-24 |
JP6002828B2 (ja) | 2016-10-05 |
JP6215420B2 (ja) | 2017-10-18 |
TW201227935A (en) | 2012-07-01 |
US10916573B2 (en) | 2021-02-09 |
US20200152680A1 (en) | 2020-05-14 |
KR101924318B1 (ko) | 2018-12-03 |
CN105336744A (zh) | 2016-02-17 |
JP2016015520A (ja) | 2016-01-28 |
CN105336744B (zh) | 2018-12-21 |
WO2011099336A1 (en) | 2011-08-18 |
JP5667464B2 (ja) | 2015-02-12 |
TWI556416B (zh) | 2016-11-01 |
KR20130025367A (ko) | 2013-03-11 |
JP2017028297A (ja) | 2017-02-02 |
US20110198483A1 (en) | 2011-08-18 |
JP5825748B2 (ja) | 2015-12-02 |
US8586905B2 (en) | 2013-11-19 |
JP2015092596A (ja) | 2015-05-14 |
CN102754209B (zh) | 2015-11-25 |
US9024248B2 (en) | 2015-05-05 |
US20150236061A1 (en) | 2015-08-20 |
US20140027768A1 (en) | 2014-01-30 |
US10535689B2 (en) | 2020-01-14 |
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