JP2011119748A - 歪み補償半導体構造および歪み補償半導体構造を製作する方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 154
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 96
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 150000004767 nitrides Chemical class 0.000 claims description 33
- 230000007704 transition Effects 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 10
- 238000005336 cracking Methods 0.000 claims description 7
- 229910002601 GaN Inorganic materials 0.000 description 25
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 20
- 229910010271 silicon carbide Inorganic materials 0.000 description 19
- 229910002704 AlGaN Inorganic materials 0.000 description 15
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 208000012868 Overgrowth Diseases 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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Abstract
【解決手段】この半導体構造は、第1の面内無歪み格子定数を有する基板と、基板上に設けられ、第1の面内無歪み格子定数とは異なる第2の面内無歪み格子定数を有する、第1の半導体材料を含む第1の層と、基板と第1の層の間に配置され、第2の半導体材料を含む可変不整合層とを含む半導体構造、およびこの半導体構造の製作方法が提供される。可変不整合層は、第1の層を基板上に直接成長させる場合に生じる応力を下回る程度にまで第1の層の応力が低減されるように構成される。可変不整合層は、第1の層の無歪み格子定数と実質的に整合する面内歪み格子定数を有する層であってもよい。
【選択図】図1
Description
Claims (14)
- 第1の面内無歪み格子定数を有する材料を有し、歪みがある基板と、
前記基板上に設けられた、第1の半導体材料を含む第1の層であって、前記第1の半導体材料は、前記基板の前記第1の面内無歪み格子定数とは異なる第2の面内無歪み格子定数を有する第1のIII族窒化物半導体材料を含み、前記第1の層は、面内歪み格子定数によって歪んでいる、前記第1の層と、
前記第1の層上に設けられ、第2の半導体材料を含む第2の層であって、前記第2の層は無歪みであり、前記第2の半導体材料は、前記基板の前記第1の面内歪み格子定数とは異なると共に、前記第1の層の前記面内歪み格子とは異なる第3の面内歪み格子定数を有する第2のIII族窒化物半導体材料を含む、前記第2の層と、
前記第1の層の前記歪んだ面内歪み格子定数から、前記第2のIII族窒化物半導体材料の前記第3の面内無歪み格子定数へ移行する前記第1の層と前記第2の層との間に配置された第3のIII族窒化物半導体材料を含む第3の層と、
を有することを特徴とする半導体構造。 - 前記第3の半導体材料が、前記第1の半導体材料から前記第2の半導体材料に移行する傾斜半導体材料を含むことを特徴とする請求項1に記載の半導体構造。
- 前記第3の半導体材料は、前記第1の半導体材料と同じ組成を有する前記第1の層に隣接する第1の表面と、前記第2の半導体材料と同じ組成を有する前記第2の層に隣接する第2の表面とを含むことを特徴とする請求項2に記載の半導体構造。
- 前記第1の層の前記面内歪み格子定数と、前記第2のIII族窒化物半導体材料の面内無歪み格子定数との差は、1%以下であることを特徴とする請求項1に記載の半導体構造。
- 前記第1の層の前記面内歪み格子定数と、前記第2のIII族窒化物半導体材料の前記第3の半導体材との差は、0.5%以下であることを特徴とする請求項1に記載の半導体構造。
- 前記第1の層の前記面内歪み格子定数と、前記第2のIII族窒化物半導体材料の前記第3の半導体材との差は、0.1%以下であることを特徴とする請求項1に記載の半導体構造。
- 前記第1の層の厚さが、割れが生じる厚さに満たないことを特徴とする請求項1に記載の半導体構造。
- 前記基板と前記可変不整合層の間にAlNバッファ層をさらに含むことを特徴とする請求項1に記載の半導体構造。
- 前記第1の層が、AlxGa1−xN(0<x≦1)を含むことを特徴とする請求項1に記載の半導体構造。
- 前記第2の層が、AlyGa1−yN(0≦y<1)を含むことを特徴とする請求項9に記載の半導体構造。
- 半導体構造を製造する方法であって、
前記基板上に設けられた、第1の半導体材料を含む第1の層であって、前記第1の半導体材料は、前記基板の前記第1の面内無歪み格子定数とは異なる第2の面内無歪み格子定数を有する第1のIII族窒化物半導体材料を含み、前記第1の層は、面内歪み格子定数によって歪んでいる、前記第1の層を形成するステップと、
前記第1の層上に設けられ、第2の半導体材料を含む第2の層であって、前記第2の層は無歪みであり、前記第2の半導体材料は、前記基板の前記第1の面内歪み格子定数とは異なると共に、前記第1の層の前記面内歪み格子とは異なる第3の面内歪み格子定数を有する第2のIII族窒化物半導体材料を含む、前記第2の層を形成するステップと、
前記第1の層の前記歪んだ面内歪み格子定数から、前記第2のIII族窒化物半導体材料の前記第3の面内無歪み格子定数へ移行する前記第1の層と前記第2の層との間に配置された第3のIII族窒化物半導体材料を含む第3の層を形成するステップと、
を備えることを特徴とする方法。 - 前記第3の層を製造するステップは、前記第1の半導体材料から前記第2の半導体材料へ移行する前記第3の半導体材料の傾斜層を形成するステップを含むことを特徴とする請求項18に記載の方法。
- 前記傾斜層を形成するステップは、前記第1の半導体材料と同じ組成を有する前記第1の層に隣接する第1の表面と、前記第2の半導体材料と同じ組成を有する前記第2の層に隣接する第2の表面とを含む前記第3の半導体材料を形成するステップを含むことを特徴とする請求項12に記載の半導体構造。
- 前記第1の層がAlxGa1−xN(0<x≦1)を含み、前記第2の層がAlyGa1−yN(0≦y<1)を含み、前記傾斜半導体層がAlzGa1−zN(xはyと等しくなく、zはxからyへ移行する)を含むことを特徴とする請求項12に記載の方法。
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US6841001B2 (en) | 2005-01-11 |
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US7271416B2 (en) | 2007-09-18 |
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