JP2008504715A - 窒化ガリウム材料及び方法 - Google Patents
窒化ガリウム材料及び方法 Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 201
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 113
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 109
- 238000000034 method Methods 0.000 title claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 127
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 58
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 56
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 54
- 239000010703 silicon Substances 0.000 claims abstract description 54
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 48
- 239000004065 semiconductor Substances 0.000 claims abstract description 40
- 230000007547 defect Effects 0.000 claims abstract description 29
- 150000004767 nitrides Chemical class 0.000 claims abstract description 29
- 230000007704 transition Effects 0.000 claims description 52
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 38
- 239000013078 crystal Substances 0.000 claims description 32
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 29
- 229910052757 nitrogen Inorganic materials 0.000 claims description 22
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical group N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 19
- 230000008901 benefit Effects 0.000 abstract description 10
- 239000010410 layer Substances 0.000 description 326
- 239000000203 mixture Substances 0.000 description 22
- 230000008569 process Effects 0.000 description 20
- 229910052733 gallium Inorganic materials 0.000 description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 11
- 238000000151 deposition Methods 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 5
- 230000002411 adverse Effects 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005274 electronic transitions Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- 208000012868 Overgrowth Diseases 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- -1 silicon nitride compound Chemical class 0.000 description 1
- 238000005475 siliconizing Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H01L21/02381—Silicon, silicon germanium, germanium
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Abstract
Description
一実施形態では、半導体構造が提供される。前記構造は、上面を有するシリコン基板と、前記基板の前記上面の大半を覆う非晶質窒化ケイ素からなる材料層を備える。窒化物からなる材料に覆われた層が窒化ケイ素からなる材料層の上に形成される。
層の上にじかに形成され、窒化物からなる材料層におけるミスフィット転位密度は1cm2あたり約1 010欠陥未満である。
通常、基板との界面で上部層15内でのミスフィット転位の生成により対処される。このようにして、応力に対処するための代替機構を提供することにより、歪み吸収層の存在はミスフィット転位の生成を削減できる。
を超える厚さを有してよい。
歪み吸収層と上部層の間の界面で、あるいは非常に近くで)非常に低いミスフィット転位密度を生じさせる。ミスフィット転位は、通常、材料の原子構造における相違のための非干渉性の結果、2つの材料間の界面で(または非常に近くで)形成される。
本発明の上部層で達成可能な非常に低いミスフィット転位密度は、さらに後述されるように、窒化ガリウム材料領域内の欠陥を削減することを含む多くの優位点につながる可能性がある。
約10ナノメートルと5ミクロンの間であってよい。
例示的な実施形態では、遷移層16が上部層の上にじかに形成されている。上部層が一定の組成を有するとき等、特定の実施形態では、遷移層が濃度が勾配している材料(例えば、濃度勾配がある窒化物からなる材料)から形成されていることが好ましいことがある。適切に濃度勾配している層は、前記に参照することにより組み込まれている公有されている米国特許第6,649,287号に説明されている。濃度勾配している遷移層は少なくとも層の一部全体で変化する組成を有する。濃度勾配している遷移層は、窒化物ガリウム材料と基板(例えばシリコン)間の熱膨張率における差異から生じる熱応力を引き下げることによって遷移層上に形成されている窒化ガリウム材料領域でのひび割れの形成を削減する上で特に効果的である。
窒化ガリウム材料領域18は、その中での素子の形成を可能にするほど十分に高品質である。前記に留意されたように、歪み吸収層の存在は、窒化ガリウム材料領域における欠陥の形成を削減できる上部層におけるミスフィット転位密度を削減してよい。例えば、点欠陥、線欠陥、及び平面欠陥の生成が削減されてよい。窒化ガリウム材料領域における欠陥生成を制限することにより、素子性能は改善できる。低いミスフィット転位密度も、デバイス性能に悪影響も及ぼす窒化ガリウム材料領域のエネルギーバンド内での電子状態の生成を制限できる。
。いくつかのプロセスでは、基板は当初相対的に厚く(例えば、約200ミクロンと800ミクロンの間)、次に後の処理ステップの間に(例えば150ミクロン未満に)薄くされる。
図1から図3に描かれている半導体構造は種々の半導体素子の基本となってよい。適切な素子は、LEDとレーザダイオードを含む発光素子だけではなくトランジスタ(例えばFET)を含むが、これらに限定されない。素子は、通常、少なくとも部分的に窒化物ガリウム材料領域の中にある活性領域を有する。また、素子は種々の他の機能層及び/または特長(例えば電極)も含む。
9,287号に説明されている構造及び素子にも含まれてよい。
歪み吸収層は、参照することにより本書に組み込まれている「裏面バイア穴を含む窒化ガリウム材料素子及び方法(Gallium Nitride Material Devices and Methods Including Backside
Vias)」と題される公有されている米国特許番号第6,611,002号に説明されている構造及び素子にも含まれてよい。
歪み吸収層を上部層と以後の層以外の別のプロセスで形成してよいことが理解されなければならない。例えば、歪み吸収層を第一のプロセスで基板上に形成してよい。それから後に、上部層を第二のプロセスで歪み吸収層上に形成してよい。
以下の例は、例示的であることを意味し、制限的ではない。
例1
本例は、本発明の一実施形態によるシリコン基板上に窒化ケイ素からなる材料の歪み吸収層の形成を描いている。
図5から図7は、結果として生じる構造を描く顕微鏡写真画像のコピーである。図5はSTEM(走査型透過電子顕微鏡)画像のコピーである。図6と図7は高解像度TEM画像のコピーである。画像は単結晶窒化アルミニウム層と単結晶シリコン基板の間に形成された非晶質窒化ケイ素の歪み吸収層の存在を示している。特に、高解像度TEM画像は結
果として生じる層と基板の結晶構造を示している。画像は、窒化ケイ素層の結晶構造が非晶質であり、シリコン基板の結晶構造が立方体であり、窒化アルミニウムの結晶構造が六角形であることを示している。窒化アルミニウム層は基板とのエピタキシャル関係を有している。
この例は、本発明の歪み吸収層がミスフィット転位密度を制限するために使用できることを立証している。
比較例
本例は、本発明の歪み吸収層がない場合にシリコン基板上にじかに形成される窒化アルミニウム層においてミスフィット転位が存在することを描いている。
Claims (63)
- 上面を有するシリコン基板と、
前記基板の前記上面の大部分を覆う非晶質窒化ケイ素からなる材料層と、
前記窒化ケイ素からなる材料層上に形成される窒化物からなる材料の上部層とを備える半導体構造。 - 前記窒化ケイ素からなる材料層が実質的に前記基板の上面全体を覆う請求項1に記載の構造。
- 前記窒化ケイ素からなる材料層がSiNからなる請求項1に記載の構造。
- 前記上部層が単結晶である請求項1に記載の構造。
- 前記上部層が約700℃より高い温度で形成される請求項1に記載の構造。
- 前記上部層が窒化ケイ素からなる材料層の上にじかに形成される請求項1に記載の構造。
- 前記上部層が窒化アルミニウムからなる材料からなる請求項1に記載の構造。
- 前記上部層が前記基板とのエピタキシャル関係を有する請求項1に記載の構造。
- 前記上部層が窒化ガリウム材料合金からなる請求項1に記載の構造。
- 前記上部層に濃度勾配がある請求項1に記載の構造。
- 前記上部層一面に形成される遷移層をさらに備える請求項1に記載の構造。
- 前記遷移層に濃度勾配がある請求項11に記載の構造。
- 濃度勾配している前記遷移層が上部層の上にじかに形成される請求項12に記載の構造。
- 濃度勾配している前記遷移層がAlxGa(1−x)Nからなり、Xは前記遷移層の背面から前記遷移層の前面へ減少する請求項12に記載の構造。
- 前記窒化ケイ素からなる材料層が100オングストローム未満の厚さを有する請求項1に記載の構造。
- 前記窒化ケイ素からなる材料層が10オングストロームより大きい厚さを有する請求項1に記載の構造。
- 前記窒化ケイ素からなる材料層が約10オングストロームと約50オングストロームの間の厚さを有する請求項1に記載の構造。
- 前記基板が約125ミクロンより大きい厚さを有する請求項1に記載の構造。
- 前記上部層一面に形成される窒化ガリウム材料領域をさらに備える請求項1に記載の構造。
- 前記上部層の欠陥が1cm2あたり約1010個未満というミスフィット転位密度を有する請求項1に記載の構造。
- 前記構造がFETである請求項1に記載の構造。
- 上面を含むシリコン基板と、
100オングストローム未満の厚さを有し、前記基板の上面の大部分を覆う窒化ケイ素からなる材料層と、
前記窒化ケイ素からなる材料層に形成される単結晶窒化物からなる材料上部層とを備える半導体構造。 - 前記窒化ケイ素からなる材料層が非晶質構造を有する請求項22に記載の構造。
- 前記窒化ケイ素からなる材料層が実質的に前記基板の前記上面全体を覆う請求項22に記載の構造。
- 前記上部層が窒化アルミニウムからなる材料を備える請求項22に記載の構造。
- 前記上部層一面に形成される遷移層をさらに備える請求項22に記載の構造。
- 前記遷移層がAlxGa(1−x)Nからなり濃度勾配がある遷移層であり、xが前記遷移層の裏面から前記遷移層の前面へ増加する請求項26に記載の構造。
- 前記窒化ケイ素からなる材料層が10オングストロームより大きい厚さを有する請求項22に記載の構造。
- 前記基板が約125ミクロンより大きい厚さを有する請求項22に記載の構造。
- 前記上部層一面に形成される窒化ガリウム材料領域をさらに備える請求項22に記載の構造。
- 前記上部層の欠陥が1cm2あたり約1010個未満というミスフィット転位密度を有する請求項22に記載の構造。
- 上面を含むシリコン基板と、
前記シリコン基板の実質的に前記上面全体を覆い、100オングストローム未満の厚さを有する非晶質窒化ケイ素からなる材料層と、
前記非品質窒化ケイ素からなる材料層の上に形成され、濃度が勾配している遷移層と、
前記遷移層の上に形成される窒化ガリウム材料領域とを備える半導体構造。 - 半導体材料領域と、
前記半導体材料領域の上に形成される歪み吸収層と、
前記歪み吸収層の上にじかに形成される窒化物からなる材料層におけるミスフィット転位密度が1cm2あたり約1010欠陥未満である前記窒化物からなる材料層とを備える半導体構造。 - 前記半導体材料領域が基板である請求項33に記載の構造。
- 前記基板が実質的に平面的である請求項34に記載の構造。
- 前記基板がケイ素である請求項33に記載の構造。
- 前記基板が炭化ケイ素である請求項33に記載の構造。
- 前記ミスフィット転位密度が1cm2あたり約108欠陥未満である請求項33に記載の構造。
- 前記ミスフィット転位密度が1cm2あたり約105欠陥未満である請求項33に記載の構造。
- 前記ミスフィット転位密度が1cm2あたり約102欠陥未満である請求項33に記載の構造。
- 前記歪み吸収層が窒化ケイ素からなる材料を備える請求項33に記載の構造。
- 前記窒化ケイ素からなる材料が非晶質構造を有する請求項41に記載の構造。
- 前記窒化物からなる材料層が窒化アルミニウム材料からなる材料を備える請求項33に記載の構造。
- 前記窒化物からなる材料層が窒化ガリウム材料からなる材料を備える請求項33に記載の構造。
- 前記窒化物からなる材料層に濃度勾配がある請求項33に記載の構造。
- 前記窒化物からなる材料層一面に形成される窒化ガリウム材料領域をさらに備える請求項33に記載の構造。
- 前記窒化ガリウム材料領域と前記窒化物からなる材料層との間に形成され、濃度が勾配している遷移層をさらに備える請求項46に記載の構造。
- 前記歪み吸収層が100オングストローム未満の厚さを有する請求項33に記載の構造。
- 前記歪み吸収層が10オングストロームより大きい厚さを有する請求項33に記載の構造。
- 前記基板が約125ミクロンより大きい厚さを有する請求項33に記載の構造。
- 前記歪み吸収層が実質的に平面的である請求項33に記載の構造。
- 前記半導体材料領域が下部層である請求項33に記載の構造。
- 前記半導体材料領域が窒化ガリウム材料を備える請求項33に記載の構造。
- 前記半導体材料領域が窒化アルミニウムからなる材料を備える請求項33に記載の構造。
- 前記半導体材料領域が、前記窒化物からなる材料層とは異なる材料を備える請求項33
に記載の構造。 - 前記半導体材料領域が前記窒化物からなる材料層とは異なる結晶構造を有する請求項33に記載の構造。
- 反応室内にシリコン基板を提供することと、
前記反応室の中に窒素源を導入し、非晶質窒化ケイ素からなる材料層を形成することと、
前記反応室の中に第2のソースを導入し、前記窒化ケイ素からなる材料層の上に窒化物からなる材料の上部層を形成することと、
を備える半導体構造を形成する方法。 - 前記窒素源が前記室内に導入されると、前記反応室内の前記温度が約1000℃と約1100℃の間である請求項57に記載の方法。
- 前記窒素源が前記室内に導入されると、前記反応室内の前記圧力が約20トールと約40トールの間である請求項57に記載の方法。
- 前記窒素源がアンモニアである請求項57に記載の方法。
- 前記窒素源が前記シリコン基板と反応し、窒化ケイ素からなる材料層を形成する請求項57に記載の方法。
- 前記第2のソースがアルミニウム源を備える請求項57に記載の方法。
- 前記アルミニウム源が前記窒素源と反応し、窒化アルミニウムの層を形成する請求項62に記載の方法。
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US7352015B2 (en) | 2008-04-01 |
US10096701B2 (en) | 2018-10-09 |
EP2894662A1 (en) | 2015-07-15 |
US8748298B2 (en) | 2014-06-10 |
WO2006012298A9 (en) | 2006-04-20 |
US20050285141A1 (en) | 2005-12-29 |
US7339205B2 (en) | 2008-03-04 |
US20080200013A1 (en) | 2008-08-21 |
US20050285142A1 (en) | 2005-12-29 |
EP1769529A1 (en) | 2007-04-04 |
WO2006012298A1 (en) | 2006-02-02 |
US20080182393A1 (en) | 2008-07-31 |
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