JP2011109086A - 膜の少なくとも一部を酸化シリコンに変換し、および/または、蒸気内紫外線硬化を利用して膜の品質を改善し、および、アンモニア内紫外線硬化を利用して膜を高密度化するシステムおよび方法 - Google Patents
膜の少なくとも一部を酸化シリコンに変換し、および/または、蒸気内紫外線硬化を利用して膜の品質を改善し、および、アンモニア内紫外線硬化を利用して膜を高密度化するシステムおよび方法 Download PDFInfo
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Abstract
【解決手段】チャンバ14内に蒸気を供給する段階と、チャンバ14内に、シリコンを含む堆積層が設けられている基板22を配置する段階と、所定の変換期間にわたって、蒸気の存在下で、堆積層にUV光を当てて、堆積層を少なくとも部分的に変換する段階とを備えるシステム10および方法を提供する。また、チャンバ14内にアンモニアを供給する段階と、チャンバ14内に、堆積層を有する基板22を配置する段階と、アンモニアの存在下で所定の変換期間にわたって堆積層にUV光を当てて、少なくとも部分的に堆積層を高密度化する段階とを備える。
【選択図】図1
Description
Claims (36)
- 基板を処理する方法であって、
チャンバ内に蒸気を供給する段階と、
前記チャンバ内に、シリコンを含む堆積層が設けられている基板を配置する段階と、
所定の変換期間にわたって、前記蒸気の存在下で、前記堆積層にUV光を当てて、前記堆積層を少なくとも部分的に変換する段階と
を備える方法。 - 前記所定の変換期間において、前記チャンバ内の前記蒸気の分圧を、前記チャンバ内のガスの70体積%より高く調節する段階をさらに備える請求項1に記載の方法。
- 前記所定の変換期間において、前記チャンバ内の前記蒸気の分圧を、前記チャンバ内のガスの15体積%より高く、且つ、70体積%より低く調節する段階をさらに備える請求項1に記載の方法。
- 前記所定の変換期間に先立って、所定の浸漬期間にわたって所定の温度で蒸気に前記基板を浸漬する段階をさらに備える請求項1に記載の方法。
- 前記チャンバ内に前記蒸気を供給する前に、前記チャンバに希釈ガスを供給して、前記チャンバ内で所定の圧力を実現する段階と、
前記所定の圧力に到達した後、前記蒸気を前記チャンバに供給する段階と、
所定の蒸気の分圧を実現するために十分な所定の期間にわたって待機する前または後に、前記チャンバ内に前記基板を配置する段階と
をさらに備える請求項1に記載の方法。 - 前記チャンバに希釈ガスおよび前記蒸気を同時に供給する段階と、
前記蒸気および前記希釈ガスの流動を調節して、所定の蒸気の分圧を実現する段階と、
前記基板を前記チャンバ内に配置する段階と
をさらに備える請求項1に記載の方法。 - 前記基板を前記チャンバ内の台の上に配置する段階と、
前記所定の変換期間において、前記台の温度を制御する段階と
をさらに備える請求項1に記載の方法。 - 前記台の温度は、前記所定の変換期間において前記基板の温度が摂氏480度未満となるように制御される請求項7に記載の方法。
- 前記所定の変換期間の後、前記チャンバおよび別のチャンバのうち少なくとも一方において、前記堆積層を高密度化する段階をさらに備える請求項1に記載の方法。
- 前記高密度化する段階はさらに、
前記チャンバおよび別のチャンバのうち少なくとも一方にアンモニアを供給する段階と、
前記アンモニアの存在下において所定の高密度化期間にわたって、前記チャンバおよび前記別のチャンバのうち前記少なくとも一方において、前記堆積層にUV光を当てる段階と
を有する請求項9に記載の方法。 - 前記高密度化する段階はさらに、
前記チャンバおよび別のチャンバのうち少なくとも一方に、希釈ガスを供給する段階と、
前記希釈ガスの存在下において所定の高密度化期間にわたって、前記チャンバおよび前記別のチャンバのうち前記少なくとも一方において、前記堆積層にUV光を当てる段階と
を有する請求項9に記載の方法。 - 前記高密度化する段階はさらに、
前記所定の変換期間の後に、前記堆積層を加熱する段階
を有する請求項9に記載の方法。 - 前記堆積層は、流動性酸化物、スピンオン誘電体(SOD)、スピンオンガラス(SOG)、および/または、スピンオンポリマー(SOP)から成る群から選択される請求項1に記載の方法。
- 前記UV光は、広帯域UV光を含む請求項1に記載の方法。
- チャンバと、
前記チャンバに蒸気を供給する蒸気源と、
前記蒸気源からの前記蒸気の存在下において所定の変換期間にわたって基板の堆積層にUV光を当てて、前記堆積層を少なくとも部分的に変換するUV源と
を備える処理システム。 - 前記チャンバ内での前記蒸気の分圧は、前記所定の変換期間において、前記チャンバ内のガスの15体積%より高く、且つ、70体積%より低い請求項15に記載の処理システム。
- 前記チャンバ内での前記蒸気の分圧は、前記所定の変換期間において、前記チャンバ内のガスの70体積%より高い請求項15に記載の処理システム。
- 前記基板は、前記所定の変換期間の前に、所定の浸漬期間にわたって蒸気に浸漬される請求項15に記載の処理システム。
- 希釈ガスを供給する希釈ガス源をさらに備え、
前記希釈ガス源は、前記蒸気源が前記蒸気を供給する前に、前記希釈ガスを前記チャンバに供給して前記チャンバ内で所定の圧力を実現し、
前記蒸気源は、前記所定の圧力に到達した後に、前記蒸気を前記チャンバに導入し、
前記基板は、所望の蒸気の分圧に対応する所定の期間の後、前記チャンバ内に配置される
請求項15に記載の処理システム。 - 前記蒸気源が前記蒸気を供給している間に希釈ガスを供給する希釈ガス源をさらに備え、
前記希釈ガス源は前記希釈ガスの流動を調節して、前記蒸気源は前記蒸気の流動を調節して、所望の蒸気の分圧を実現する請求項15に記載の処理システム。 - 台と、
前記所定の変換期間において前記チャンバ内の前記台を加熱するヒータと
をさらに備える請求項15に記載の処理システム。 - 前記ヒータは、前記基板の温度が摂氏480度未満となるように、前記台を加熱する請求項21に記載の処理システム。
- 前記基板は、前記所定の変換期間の後、高密度化される請求項15に記載の処理システム。
- 前記チャンバおよび別のチャンバのうち一方に、アンモニアを供給するアンモニア源をさらに備え、
前記基板は、前記アンモニアの存在下において所定の高密度化期間にわたって前記堆積層に前記UV光を当てることによって高密度化される請求項23に記載の処理システム。 - 前記チャンバおよび別のチャンバのうち一方に希釈ガスを供給する希釈ガス源をさらに備え、
前記基板は、前記希釈ガスの存在下において所定の高密度化期間にわたって前記堆積層にUV光を当てることによって高密度化される請求項23に記載の処理システム。 - 前記基板は、アニーリングによって高密度化される請求項23に記載の処理システム。
- 前記堆積層は、流動性酸化物、スピンオン誘電体(SOD)、スピンオンガラス(SOG)、および/または、スピンオンポリマー(SOP)から成る群から選択される請求項15に記載の処理システム。
- 前記UV源は、広帯域UV光を供給する請求項15に記載の処理システム。
- 基板の堆積層を高密度化する方法であって、
チャンバにアンモニアを供給する段階と、
前記チャンバ内に、前記堆積層を有する前記基板を配置する段階と、
前記アンモニアの存在下で所定の変換期間にわたって前記堆積層にUV光を当てて、少なくとも部分的に前記堆積層を高密度化する段階と
を備える方法。 - 前記堆積層を高密度化する段階に先立って、前記チャンバおよび別のチャンバのうち一方において、蒸気内でのUV硬化を利用して前記堆積層を酸化シリコンに変換する段階をさらに備える請求項29に記載の方法。
- 前記堆積層を高密度化する段階に先立って、
前記チャンバおよび別のチャンバのうち一方に、蒸気を供給する段階と、
前記チャンバおよび別のチャンバのうち前記一方に、前記堆積層を有する前記基板を配置する段階と、
前記蒸気の存在下において所定の変換期間にわたって前記堆積層にUV光を当てて、前記堆積層を少なくとも部分的に変換する段階と
をさらに備える請求項29に記載の方法。 - 前記所定の変換期間において、前記チャンバおよび別のチャンバのうち前記一方における前記蒸気の分圧を、前記チャンバ内のガスの70体積%より高くなるように調節する段階をさらに備える請求項31に記載の方法。
- 前記所定の変換期間において、前記チャンバおよび別のチャンバのうち前記一方における前記蒸気の分圧を、前記チャンバ内のガスの15体積%より高く、且つ、70体積%より低く調節する段階をさらに備える請求項31に記載の方法。
- 前記所定の変換期間の前に、所定の浸漬期間にわたって前記蒸気に前記基板を浸漬する段階をさらに備える請求項31に記載の方法。
- 前記堆積層は、流動性酸化物、スピンオン誘電体(SOD)、スピンオンガラス(SOG)、および/または、スピンオンポリマー(SOP)から成る群から選択される請求項31に記載の方法。
- 前記UV光は、広帯域UV光を含む請求項29に記載の方法。
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KR20110052509A (ko) | 2011-05-18 |
TWI608121B (zh) | 2017-12-11 |
US9147589B2 (en) | 2015-09-29 |
TW201120239A (en) | 2011-06-16 |
US8528224B2 (en) | 2013-09-10 |
KR101799594B1 (ko) | 2017-11-20 |
US20120036732A1 (en) | 2012-02-16 |
US20140020259A1 (en) | 2014-01-23 |
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