JP2011100117A - 液晶表示装置及び当該液晶表示装置を具備する電子機器 - Google Patents
液晶表示装置及び当該液晶表示装置を具備する電子機器 Download PDFInfo
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- JP2011100117A JP2011100117A JP2010225677A JP2010225677A JP2011100117A JP 2011100117 A JP2011100117 A JP 2011100117A JP 2010225677 A JP2010225677 A JP 2010225677A JP 2010225677 A JP2010225677 A JP 2010225677A JP 2011100117 A JP2011100117 A JP 2011100117A
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- oxide semiconductor
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/40—Arrangements for improving the aperture ratio
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0439—Pixel structures
- G09G2300/0443—Pixel structures with several sub-pixels for the same colour in a pixel, not specifically used to display gradations
- G09G2300/0447—Pixel structures with several sub-pixels for the same colour in a pixel, not specifically used to display gradations for multi-domain technique to improve the viewing angle in a liquid crystal display, such as multi-vertical alignment [MVA]
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
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Abstract
【解決手段】薄膜トランジスタ106、及び画素電極105を有する複数の画素を有し、画素は、走査線として機能する第1の配線101に電気的に接続されており、薄膜トランジスタは、第1の配線101上にゲート絶縁膜113を介して設けられた酸化物半導体層103を有し、酸化物半導体層103は、第1の配線が設けられた領域をはみ出て設けられており、画素電極105と、酸化物半導体層103とが重畳して設けられる。
【選択図】図1
Description
本実施の形態では、一例として、薄膜トランジスタ(以下、TFTともいう)及び当該TFTに接続された画素電極として機能する電極(単に画素電極ともいう)について示し、液晶表示装置の説明をする。なお画素とは、表示装置の各画素に設けられた各素子、例えば薄膜トランジスタ、画素電極として機能する電極、及び配線等の電気的な信号により表示を制御するための素子で構成される素子群、のことをいう。なお画素は、カラーフィルター等を含むものであっても良く、一画素によって、明るさを制御できる色要素一つ分としてもよい。よって、一例として、RGBの色要素からなるカラー表示装置の場合には、画像の最小単位は、Rの画素とGの画素とBの画素との三画素から構成されるものとなり、複数の画素によって画像を得ることができるものとなる。
上記実施の形態とは別のTFTの構成の表示装置の画素を構成する例を以下に説明する。
上記実施の形態とは別のTFTの構成の表示装置の画素を構成する例を以下に説明する。
本実施の形態においては、液晶表示装置に適用できる画素の構成及び画素の動作について説明する。
本実施の形態においては、上記実施の形態で説明した液晶表示装置を具備する電子機器の例について説明する。
101 配線
102 配線
103 酸化物半導体層
104 容量線
105 画素電極
106 薄膜トランジスタ
111 基板
112 下地膜
113 ゲート絶縁膜
114 酸化物絶縁層
121 開口部
400 画素
401 配線
402 配線
403 酸化物半導体層
404 容量線
405 画素電極
406 薄膜トランジスタ
411 基板
412 下地膜
413 ゲート絶縁膜
414 酸化物絶縁層
700 基板
701 画素
702 画素部
703 走査線駆動回路
704 信号線駆動回路
880 画素
881 トランジスタ
882 液晶素子
883 容量素子
884 配線
885 配線
886 配線
887 配線
984 信号
985 信号
986 電圧
102A 配線
102B 配線
1080 画素
1081 トランジスタ
1082 液晶素子
1083 容量素子
1084 配線
1085 配線
1086 配線
1088 画素電極
402A 配線
402B 配線
601A 絶縁層
601B 絶縁層
9630 筐体
9631 表示部
9633 スピーカ
9635 操作キー
9636 接続端子
9638 マイクロフォン
9672 記録媒体読込部
9676 シャッターボタン
9677 受像部
9680 外部接続ポート
9681 ポインティングデバイス
Claims (4)
- 薄膜トランジスタ、及び画素電極を有する複数の画素を有し、
前記画素は、走査線として機能する第1の配線に電気的に接続されており、
前記薄膜トランジスタは、前記第1の配線上にゲート絶縁膜を介して設けられた酸化物半導体層を有し、
前記酸化物半導体層は、前記第1の配線が設けられた領域をはみ出て設けられており、
前記画素電極と、前記酸化物半導体層とが重畳して設けられることを特徴とする液晶表示装置。 - 薄膜トランジスタ、及び画素電極を有する複数の画素を有し、
前記画素は、走査線として機能する第1の配線と、信号線として機能する第2の配線に電気的に接続されており、
前記薄膜トランジスタは、前記第1の配線上にゲート絶縁膜を介して設けられた酸化物半導体層を有し、
前記酸化物半導体層は、前記第1の配線が設けられた領域をはみ出て設けられており、
前記第2の配線は、前記第1の配線上の前記ゲート絶縁膜上を延在して前記酸化物半導体層上に接しており、
前記画素電極と、前記酸化物半導体層とが重畳して設けられることを特徴とする液晶表示装置。 - 薄膜トランジスタ、及び画素電極を有する複数の画素を有し、
前記画素は、走査線として機能する第1の配線と、信号線として機能する第2の配線に電気的に接続されており、
前記薄膜トランジスタは、前記第1の配線上にゲート絶縁膜を介して設けられた酸化物半導体層を有し、
前記酸化物半導体層は、前記第1の配線が設けられた領域をはみ出て設けられており、
前記第2の配線は、前記第1の配線上の前記ゲート絶縁膜及び前記ゲート絶縁膜上の層間絶縁膜上を延在して前記酸化物半導体層上に接しており、
前記画素電極と、前記酸化物半導体層とが重畳して設けられることを特徴とする液晶表示装置。 - 請求項1乃至請求項3のいずれか一に記載の液晶表示装置を具備することを特徴とする電子機器。
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JP2013009314A (ja) * | 2011-05-20 | 2013-01-10 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
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WO2016104253A1 (ja) * | 2014-12-25 | 2016-06-30 | シャープ株式会社 | 半導体装置 |
US10141453B2 (en) | 2014-12-25 | 2018-11-27 | Sharp Kabushiki Kaisha | Semiconductor device |
JP2018185397A (ja) * | 2017-04-25 | 2018-11-22 | 株式会社ジャパンディスプレイ | 表示装置及びその製造方法 |
US11114568B2 (en) | 2017-04-25 | 2021-09-07 | Japan Display Inc. | Semiconductor device |
US11935967B2 (en) | 2017-04-25 | 2024-03-19 | Japan Display Inc. | Semiconductor device |
WO2021161659A1 (ja) * | 2020-02-14 | 2021-08-19 | 株式会社ジャパンディスプレイ | 表示装置及び表示装置用アレイ基板 |
CN115087916A (zh) * | 2020-02-14 | 2022-09-20 | 株式会社日本显示器 | 显示装置以及显示装置用阵列基板 |
US11914252B2 (en) | 2020-02-14 | 2024-02-27 | Japan Display Inc. | Display device and array substrate for display device |
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US20110085104A1 (en) | 2011-04-14 |
JP2015165329A (ja) | 2015-09-17 |
JP7161562B2 (ja) | 2022-10-26 |
CN103984176B (zh) | 2016-01-20 |
JP2018197878A (ja) | 2018-12-13 |
JP6857751B2 (ja) | 2021-04-14 |
JP2020074012A (ja) | 2020-05-14 |
JP2016066101A (ja) | 2016-04-28 |
TWI655486B (zh) | 2019-04-01 |
WO2011043217A1 (en) | 2011-04-14 |
JP2021113974A (ja) | 2021-08-05 |
CN102576174A (zh) | 2012-07-11 |
JP6642951B2 (ja) | 2020-02-12 |
TW201435432A (zh) | 2014-09-16 |
JP2017194691A (ja) | 2017-10-26 |
KR20140066802A (ko) | 2014-06-02 |
JP2022186813A (ja) | 2022-12-15 |
JP2023126290A (ja) | 2023-09-07 |
JP5542258B2 (ja) | 2014-07-09 |
JP6393801B2 (ja) | 2018-09-19 |
US8482690B2 (en) | 2013-07-09 |
CN103984176A (zh) | 2014-08-13 |
JP2012252349A (ja) | 2012-12-20 |
TW201207531A (en) | 2012-02-16 |
TWI464486B (zh) | 2014-12-11 |
JP5225493B2 (ja) | 2013-07-03 |
KR20120083341A (ko) | 2012-07-25 |
KR101424950B1 (ko) | 2014-08-01 |
CN102576174B (zh) | 2018-02-23 |
JP2013109375A (ja) | 2013-06-06 |
JP2014170239A (ja) | 2014-09-18 |
JP7309028B2 (ja) | 2023-07-14 |
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