JP2011095746A - フォトレジスト組成物およびこれを用いた表示基板の製造方法 - Google Patents
フォトレジスト組成物およびこれを用いた表示基板の製造方法 Download PDFInfo
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- JP2011095746A JP2011095746A JP2010238319A JP2010238319A JP2011095746A JP 2011095746 A JP2011095746 A JP 2011095746A JP 2010238319 A JP2010238319 A JP 2010238319A JP 2010238319 A JP2010238319 A JP 2010238319A JP 2011095746 A JP2011095746 A JP 2011095746A
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- 230000006355 external stress Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
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- 239000011777 magnesium Substances 0.000 description 1
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- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
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- YBBRCQOCSYXUOC-UHFFFAOYSA-N sulfuryl dichloride Chemical compound ClS(Cl)(=O)=O YBBRCQOCSYXUOC-UHFFFAOYSA-N 0.000 description 1
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- 229910052725 zinc Inorganic materials 0.000 description 1
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0385—Macromolecular compounds which are rendered insoluble or differentially wettable using epoxidised novolak resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Liquid Crystal (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
【解決手段】フォトレジスト組成物はアルカリ可溶性樹脂、キノンアジアド系化合物を含む溶解抑制剤、ベンゾ−ル類化合物を含む第1添加剤、アクリル供重合体を含む第2添加剤および有機溶媒を含む。これによって、耐熱性を向上させながらもフォトレジストパターンを容易にストリップさせ、フォトレジストパターンにクラックが生じるのを低減させる。
【選択図】図5
Description
本発明の一実施形態に係るフォトレジスト組成物はa)アルカリ可溶性樹脂、b)溶解抑制剤、c)第1添加剤、d)第2添加剤およびe)有機溶媒を含む。
アルカリ可溶性樹脂は分級タイプのノボラック系樹脂(fractionated novolac resin)を含む。分級タイプのノボラック系樹脂は、合成された樹脂を分別処理し、樹脂の分子量分布中で中分子領域を切断(cut)して得た高分子領域および低分子領域の樹脂として定義し、以下では「分級ノボラック系樹脂(fractionated novolac resin)」と称する。
溶解抑制剤はキノンジアジド系化合物を含む。具体的に、キノンジアジド系化合物はキノンジアジドスルホン酸エステル化合物(quinone diazide sulfonic acid ester compound)、ジアゾナフトキノン(diazonaphthoquinone;DNQ)ともいう。キノンジアジドスルホン酸エステル化合物はヒドロキシ基を有するフェノール系化合物(バックボーンともいう)とキノンジアジドスルホン酸ハロゲン化合物を反応させて得るようにしてもよい。
第1添加剤は下記化学式(1)で示すベンゾ−ル類化合物を含む。
第2添加剤は下記化学式(2)で示すアクリル供重合体を含む。
有機溶媒の例としては、エーテル類、グリコールエーテル類、エチレングリコールアルキルエーテルアセテート類、ジエチレングリコール類、プロピレングリコールモノアルキルエーテル類、プロピレングリコールアルキルエーテルアセテート類、芳香族炭化水素類、ケトン類、エステル類などが挙げられる。これらはそれぞれ単独でまたは混合して用いてもよい。具体的に、有機溶媒の例は乳酸エチル、2−ヘプタノン、シクロヘキサノン、アニソール(anisole)、プロピレングリコールメチルエーテル、プロピレングリコールエチルエーテル、プロピレングリコールメチルエーテルアセテート(PGMEA)、ジエチレングリコールモノメチルエーテル、ジエチレングリコールモノメチルエーテルアセテート、ジプロピレングリコールモノメテルエーテル、ジプロピレングリコールモノメチルアセテート、ブチルアセテート、ペンチルアセテート、エトキシエチルプロピオネートなどが挙げられる。これらはそれぞれ単独でまたは混合して用いてもよい。
フォトレジスト組成物はアルカリ可溶性樹脂、溶解抑制剤、第1および第2添加剤と、有機溶媒の他に、界面活性剤、接着増進制などをさらに含んでもよい。界面活性剤、接着増進制などの含有量はアルカリ可溶性樹脂、溶解抑制剤、第1および第2添加剤の含有量を考慮して決めてもよい。ただし、界面活性剤、接着増進制などの含有量は溶解抑制剤、第1および第2添加剤の反応に影響を与えるのを防止するためにフォトレジスト組成物全体重量の約0重量%以上約1重量%以下に考慮することが望ましい。
下記表1のように比較例1〜6に係るフォトレジスト組成物を製造した。
実施例1、2および比較例1〜6のフォトレジスト組成物をそれぞれヘキサメチルジシラザン(hexamethyldisilazane)で処理されたシリコンウェハ上にスピンコーティングし、ホットプレートで約90℃で約60秒間プレ−ベイキング(pre−baked)して約1.50μmのフォトレジスト膜を形成した。フォトレジスト膜が形成されたシリコンウェハをNSR−2005 i9C I−ラインステッパの(ニコン社、NA=0.57,=0.60)を使い露光量を段階的に変化させながら露光させた。続いて、露光されたフォトレジスト膜を約110℃で約60秒間熱処理した後、約2.38%のテトラメチルアンモニウムヒドロキサイド水溶液を用いて約60秒間現像してフォトレジストパターンを形成した。
(1)耐クラック性評価
実施例1、2および比較例1〜6のフォトレジスト組成物を用いて形成したフォトレジストパターンそれぞれにT−01(商品名、東友FINE−CHEM社製、韓国)を加えた後、フォトレジストパターンの表面での均熱程度を顕微鏡で観察して、その結果を、常に良い(◎)、良い(○)、普通(△)および悪い(×)で下記表2に示した。
実施例1、2および比較例1〜6のフォトレジスト組成物を用いて形成したフォトレジストパターンそれぞれにPRS−2000(東友FINE−CHEM社製、韓国)を使い除去した後、シリコンウェハ表面を観察して、その結果を、非常に良い(◎)、良い(○)、普通(△)および悪い(×)で下記表2に示した。
実施例1、2および比較例1〜6のフォトレジスト組成物を用いて形成したフォトレジストパターンそれぞれを約150℃で約150秒の間熱処理した後、走査型電子顕微鏡(SEM)を用いた熱処理前後プロファイルを比較して、その結果を、変わらない(◎)、少し変わる(○)、普通(△)および非常に変わる(×)で下記表2に示した。
以下、図1〜図7を参照して、本発明の実施形態に係る表示基板の製造方法について詳細に説明する。
121 ゲート線
123 ゲート電極
130 ゲート絶縁層
140a 半導体層
140b オーミックコンタクト層
146 アクティブパターン
150 ソース金属層
M1、M2,M3 第1、第2、第3金属膜
152 データ線
154 予備電極パターン
156 ソース電極
158 ドレイン電極
160 パッシベーション層
170 平坦化層
180 画素電極
210、220 第1、第2フォトレジストパターン
222 残留パターン
Claims (10)
- アルカリ可溶性樹脂と、
キノンジアジド系化合物を含む溶解抑制剤と、
下記化学式(1)で示すベンゾール類化合物を含む第1添加剤と、
下記化学式(2)で示すアクリル供重合体を含む第2添加剤と、
有機溶媒と、
を含むことを特徴とするフォトレジスト組成物。
(前記化学式(1)で、R1、R2およびR3はそれぞれ独立的に水素原子、1〜10の炭素原子数を有するアルキル基または1〜10の炭素原子数を有するアルキルヒドロキシ基を示し、R1、R2およびR3の中で少なくとも1つはヒドロキシ基を示し、前記化学式(2)で、R4、R5およびR6はそれぞれ独立的に水素原子または炭素原子数1〜3のアルキル基を示し、R7は水素原子価置換または非置換された炭素原子数1〜6の炭化水素を示し、R8はベンジル基またはフェニル基を示し、m、nおよびkはそれぞれ独立的に1〜99の自然数であって、m+n+k=100である)。 - 前記アルカリ可溶性樹脂は、
分級タイプのノボラック系樹脂を含むことを特徴とする請求項1に記載のフォトレジスト組成物。 - 前記分級タイプのノボラック系樹脂のガラス転移点は120℃以上150℃以下であることを特徴とする請求項2に記載のフォトレジスト組成物。
- 前記分級タイプのノボラック系樹脂の重量平均分子量は20000g/mol以上30000g/mol以下であることを特徴とする請求項2に記載のフォトレジスト組成物。
- 前記溶解抑制剤は、
少なくとも1つのヒドロキシ基を有するフェノール系化合物とキノンスルホン酸ハロゲン化合物を反応させたエステール化合物であることを特徴とする請求項1に記載のフォトレジスト組成物。 - 前記第2添加剤の重量平均分子量は5000g/mol以上10000g/mol以下であることを特徴とする請求項1に記載のフォトレジスト組成物。
- 前記第2添加剤は、
メチル(メタ)アクリレート、エチル(メタ)アクリレート、プロピル(メタ)アクリレート、n−ブチル(メタ)アクリレート、ぺチル(メタ)アクリレート、ベンジル(メタ)アクリレート、2−メトキシエチル(メタ)アクリレート、メトキシトリエチレングリコール(メタ)アクリレート、3−メトキシブチル(メタ)アクリレート、エチルカルビトル(メタ)アクリレート、ペノキシポリエチレングリコール(メタ)アクリレートでからなる群から選ばれた少なくとも1つが不飽和カルボン酸と供重合されたことを特徴とする請求項1に記載のフォトレジスト組成物。 - 前記アルカリ可溶性樹脂は、
メタクレゾールおよびパラクレゾールを60:40の重量比で混合したフェノール混合物を用いた第1分級ノボラック系樹脂と、
メタクレゾールおよびパラクレゾールを50:50の重量比で混合したフェノール混合物を用いた第2分級ノボラック系樹脂と、を含むことを特徴とする請求項第1に記載のフォトレジスト組成物。 - 10重量%以上25重量%以下の前記アルカリ可溶性樹脂、1重量%以上10重量%以下の前記溶解抑制剤、0.1重量%以上10重量%以下の前記第1添加剤、0.1重量%以上10重量%以下の前記第2添加剤および有機溶媒を含むことを特徴とする請求項1に記載のフォトレジスト組成物。
- ベース基板上にゲート線およびゲート電極を含むゲートパターンを形成し、
前記ゲートパターンを含む前記ベース基板上に、ゲート絶縁層、半導体層、オーミックコンタクト層およびソース金属層を形成し、
前記ソース金属層を含む前記ベース基板上に、アルカリ可溶性樹脂、キノンジアジド系化合物を含む溶解抑制剤、下記化学式(1)で示すベンゾ−ル類化合物を含む第1添加剤、下記化学式(2)で示すアクリル供重合体を含む第2添加剤および有機溶媒を含むフォトレジスト組成物を用いてフォトレジストパターンを形成し、
前記フォトレジストパターンをエッチング防止膜として前記ソース金属層をパターニングしてデータ線、ソース電極およびドレイン電極を含むソースパターンと、前記ソース電極およびドレイン電極下部に形成されたアクティブパターンを形成し、
前記ソースパターンおよび前記アクティブパターンを含む前記ベース基板上に前記ドレイン電極と電気的に接続された画素電極を形成すること特徴とする表示基板の製造方法。
(前記化学式(1)で、R1、R2およびR3はそれぞれ独立的に水素原子、1〜10の炭素原子数を有するアルキル基または1〜10の炭素原子数を有するアルキルヒドロキシ基ことを示し、R1、R2およびR3のうち少なくとも1つはヒドロキシ基を示し、前記化学式(2)で、R4、R5およびR6はそれぞれ独立的に水素原子または炭素原子数1〜3のアルキル基を示し、R7は水素原子価置換または非置換された炭素原子数1〜6の炭化水素を示し、R8はベンジル基またはフェニル基を示し、m、nおよびkはそれぞれ独立的に1〜99の自然数であって、m+n+k=100)である。
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