JP2011082134A - 有機発光表示装置及びその製造方法 - Google Patents
有機発光表示装置及びその製造方法 Download PDFInfo
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- JP2011082134A JP2011082134A JP2010110222A JP2010110222A JP2011082134A JP 2011082134 A JP2011082134 A JP 2011082134A JP 2010110222 A JP2010110222 A JP 2010110222A JP 2010110222 A JP2010110222 A JP 2010110222A JP 2011082134 A JP2011082134 A JP 2011082134A
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- organic light
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- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 230000002265 prevention Effects 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- JFLKFZNIIQFQBS-FNCQTZNRSA-N trans,trans-1,4-Diphenyl-1,3-butadiene Chemical group C=1C=CC=CC=1\C=C\C=C\C1=CC=CC=C1 JFLKFZNIIQFQBS-FNCQTZNRSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/816—Multilayers, e.g. transparent multilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80517—Multilayers, e.g. transparent multilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
【解決手段】基板10と、基板上に形成されている第1電極12と、第1電極上に形成されている発光層15と、発光層上に形成されている第2電極17とを含み、第2電極は、半透過導電層及び導電性酸化物層を含む。
【選択図】図1
Description
12 第1電極、
13 有機発光部材、
17 第2電極、
14、16 付帯層、
15 発光層、
18 半透過導電層、
19 導電性酸化物層。
Claims (9)
- 基板と、
前記基板上に形成されている第1電極と、
前記第1電極上に形成されている発光層と、
前記発光層上に形成されている第2電極と、を含み、
前記第2電極は、半透過導電層及び導電性酸化物層を含む、有機発光表示装置。 - 前記導電性酸化物層は、反射係数が1.5乃至2である、請求項1に記載の有機発光表示装置。
- 前記導電性酸化物層は、厚さが50乃至150nmである、請求項1または2に記載の有機発光表示装置。
- 前記半透過導電層は、アルミニウム(Al)を含む第1層及び銀(Ag)を含む第2層を含む、請求項1に記載の有機発光表示装置。
- 前記半透過導電層の厚さは50nmよりも薄い、請求項4に記載の有機発光表示装置。
- 前記第1電極はカソードであり、前記第2電極はアノードである、請求項1に記載の有機発光表示装置。
- 基板上に第1電極を形成する段階と、
前記第1電極上に発光層を形成する段階と、
前記発光層上に第2電極を形成する段階と、を含み、
前記第2電極を形成する段階は、半透過導電層を形成する段階及び導電性酸化物層を形成する段階を含む、有機発光表示装置の製造方法。 - 前記導電性酸化物層を形成する段階は、0.5乃至10%の酸素分圧比で行われる、請求項7に記載の有機発光表示装置の製造方法。
- 前記導電性酸化物層を形成する段階は、対向ターゲットスパッタリング(facing target sputtering、FTS)を適用する、請求項7に記載の有機発光表示装置の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090095830A KR20110038513A (ko) | 2009-10-08 | 2009-10-08 | 유기 발광 표시 장치 및 그 제조 방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2011082134A true JP2011082134A (ja) | 2011-04-21 |
Family
ID=43854130
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010110222A Pending JP2011082134A (ja) | 2009-10-08 | 2010-05-12 | 有機発光表示装置及びその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20110084288A1 (ja) |
JP (1) | JP2011082134A (ja) |
KR (1) | KR20110038513A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014109265A1 (ja) * | 2013-01-11 | 2014-07-17 | コニカミノルタ株式会社 | 透明電極、及び、電子デバイス |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020097758A1 (zh) * | 2018-11-12 | 2020-05-22 | 京东方科技集团股份有限公司 | 阵列基板、显示面板、显示装置和阵列基板的制造方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001039554A1 (en) * | 1999-11-22 | 2001-05-31 | Sony Corporation | Display device |
JP2005347274A (ja) * | 2004-06-04 | 2005-12-15 | Lg Electron Inc | 有機elディスプレイ及びその製造方法 |
JP2006038986A (ja) * | 2004-07-23 | 2006-02-09 | Seiko Epson Corp | 表示装置、電子機器 |
JP2006156400A (ja) * | 2004-11-29 | 2006-06-15 | Samsung Sdi Co Ltd | 有機電界発光素子及びその製造方法 |
JP2006253015A (ja) * | 2005-03-11 | 2006-09-21 | Idemitsu Kosan Co Ltd | 有機エレクトロルミネッセンスカラー発光装置 |
JP2007027698A (ja) * | 2005-06-17 | 2007-02-01 | Fujifilm Holdings Corp | 光源、露光装置、画像表示装置及び医療装置 |
JP2007128879A (ja) * | 2005-11-01 | 2007-05-24 | Samsung Electronics Co Ltd | ディスプレイ装置及びその製造方法 |
JP2008091323A (ja) * | 2006-09-07 | 2008-04-17 | Canon Inc | 有機発光装置 |
JP2009176730A (ja) * | 2007-12-28 | 2009-08-06 | Sumitomo Chemical Co Ltd | 高分子発光素子、製造方法及び高分子発光ディスプレイ装置 |
Family Cites Families (9)
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US5343050A (en) * | 1992-01-07 | 1994-08-30 | Kabushiki Kaisha Toshiba | Organic electroluminescent device with low barrier height |
US20040140758A1 (en) * | 2003-01-17 | 2004-07-22 | Eastman Kodak Company | Organic light emitting device (OLED) display with improved light emission using a metallic anode |
TWI287299B (en) * | 2004-09-21 | 2007-09-21 | Epistar Corp | Semiconductor light emitting device and fabrication method of the same |
TWI240593B (en) * | 2004-10-15 | 2005-09-21 | Ind Tech Res Inst | Top-emitting organic light emitting diode (OLED) |
TWI261483B (en) * | 2004-10-15 | 2006-09-01 | Ind Tech Res Inst | Structure of anode applicable on inverted-type organic light emitting device |
JP2006318837A (ja) * | 2005-05-16 | 2006-11-24 | Hitachi Displays Ltd | 有機電界発光素子及び有機電界発光装置 |
KR100796603B1 (ko) * | 2006-11-28 | 2008-01-21 | 삼성에스디아이 주식회사 | 유기전계발광소자 및 그의 제조방법 |
DE102007024152A1 (de) * | 2007-04-18 | 2008-10-23 | Osram Opto Semiconductors Gmbh | Organisches optoelektronisches Bauelement |
JP2010055926A (ja) * | 2008-08-28 | 2010-03-11 | Yamagata Promotional Organization For Industrial Technology | 有機エレクトロルミネッセンス素子およびその製造方法 |
-
2009
- 2009-10-08 KR KR1020090095830A patent/KR20110038513A/ko active Search and Examination
-
2010
- 2010-05-12 JP JP2010110222A patent/JP2011082134A/ja active Pending
- 2010-10-06 US US12/923,732 patent/US20110084288A1/en not_active Abandoned
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001039554A1 (en) * | 1999-11-22 | 2001-05-31 | Sony Corporation | Display device |
JP2005347274A (ja) * | 2004-06-04 | 2005-12-15 | Lg Electron Inc | 有機elディスプレイ及びその製造方法 |
JP2006038986A (ja) * | 2004-07-23 | 2006-02-09 | Seiko Epson Corp | 表示装置、電子機器 |
JP2006156400A (ja) * | 2004-11-29 | 2006-06-15 | Samsung Sdi Co Ltd | 有機電界発光素子及びその製造方法 |
JP2006253015A (ja) * | 2005-03-11 | 2006-09-21 | Idemitsu Kosan Co Ltd | 有機エレクトロルミネッセンスカラー発光装置 |
JP2007027698A (ja) * | 2005-06-17 | 2007-02-01 | Fujifilm Holdings Corp | 光源、露光装置、画像表示装置及び医療装置 |
JP2007128879A (ja) * | 2005-11-01 | 2007-05-24 | Samsung Electronics Co Ltd | ディスプレイ装置及びその製造方法 |
JP2008091323A (ja) * | 2006-09-07 | 2008-04-17 | Canon Inc | 有機発光装置 |
JP2009176730A (ja) * | 2007-12-28 | 2009-08-06 | Sumitomo Chemical Co Ltd | 高分子発光素子、製造方法及び高分子発光ディスプレイ装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014109265A1 (ja) * | 2013-01-11 | 2014-07-17 | コニカミノルタ株式会社 | 透明電極、及び、電子デバイス |
Also Published As
Publication number | Publication date |
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US20110084288A1 (en) | 2011-04-14 |
KR20110038513A (ko) | 2011-04-14 |
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