JP2011035399A - AlCuプロセスのCMOSイメージセンサーの大ビアボンディングパッドのアプリケーション - Google Patents
AlCuプロセスのCMOSイメージセンサーの大ビアボンディングパッドのアプリケーション Download PDFInfo
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- JP2011035399A JP2011035399A JP2010170162A JP2010170162A JP2011035399A JP 2011035399 A JP2011035399 A JP 2011035399A JP 2010170162 A JP2010170162 A JP 2010170162A JP 2010170162 A JP2010170162 A JP 2010170162A JP 2011035399 A JP2011035399 A JP 2011035399A
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- 229910016570 AlCu Inorganic materials 0.000 title claims abstract description 4
- 238000000034 method Methods 0.000 title abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 84
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 230000002093 peripheral effect Effects 0.000 claims description 11
- 229910000679 solder Inorganic materials 0.000 claims description 5
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 92
- 239000004065 semiconductor Substances 0.000 description 24
- 238000004519 manufacturing process Methods 0.000 description 21
- 239000000463 material Substances 0.000 description 12
- 238000002955 isolation Methods 0.000 description 10
- 230000005855 radiation Effects 0.000 description 9
- 239000004020 conductor Substances 0.000 description 8
- 238000002161 passivation Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 238000000059 patterning Methods 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 238000005286 illumination Methods 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
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- 239000010703 silicon Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
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- 238000002513 implantation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
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- 239000000523 sample Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
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- 229910000676 Si alloy Inorganic materials 0.000 description 1
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- 238000000137 annealing Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
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- 229920000642 polymer Polymers 0.000 description 1
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】集積回路は、ボンディングパッド領域と非ボンディングパッド領域とを有する基板からなる。“大ビア”と称される相対して大きいビアが、ボンディング領域の基板上に形成される。大ビアは、基板向きの上面図にて、第一寸法を有する。集積回路は、非ボンディング領域の基板上に形成された複数のビアも有する。複数のビアは、それぞれ、上面図にて、第二寸法を有し、第二寸法は、第一寸法より相当小さい。
【選択図】 図9
Description
これは、ボンディングパッド65Dは比較的薄く、ボンディングパッド65Dは、ボールボンディングプロセス中に生じうるストレスに対する十分な機械的支持を提供しない程度のもので、その後、ボンディングワイヤ165とボンディングパッド65D間の接着力が弱くなるおそれがあるという事実による。別の問題は、ボンディングパッドの剥離で、ボンディングパッド65Dが小ビアアレイから剥がれ落ちるおそれがあることを意味する。ボンディングパッド65Dと小ビア間の不十分なコンタクト表面積のために(各ビアが比較的小さい表面積を有するので)、ボンディングパッド剥離が生じるおそれがある。ボンディングパッド領域56が小ビアを用いることに関連した別の問題は、層間絶縁膜の亀裂である。層間絶縁膜は、小ビアの間に存在する誘電層70の部分に関連する。誘電層70は、通常、酸化ケイ素材料からなり、ガラスと類似する。ボンディングの最中等で、ストレスがかかる時、ボンディングパッド領域56の小ビア間の誘電層70の部分は、ストレスに屈して、亀裂し始める。上記これらの問題の全てが、BSIイメージセンサー装置30の性能と歩留まりに悪影響を及ぼすものである。
その後、ソルダーバンプが加熱され(例えば、オーブンで)、ソルダーバンプが融解、流動し、イメージセンサーのボンディングパッドと外部回路のボンディングパッド間に十分な接合コンタクトを形成し、フリップチップ接合プロセスを完成する。
13、15、17、19 ステップ
30 BSIイメージセンサー装置
32 装置基板
34 表面
36 裏面
38 初期厚さ
40、42、182、184 画素
43 光
47、49、185、186 分離構造
52 画素領域
54 周辺領域
56 ボンディングパッド領域
60、61 微小電子装置
65、120、190、235 導電層
65A〜65D、120A〜120D、190A〜190D、235A、235B 導電線
68、95、100、124、150、212、215、238、250 幅
70、125、192、240 誘電層
75 パターン化プロセス
80、82、84、86、88、90、92、145、200、205、210、245 開口
102、104、106、108、110、112、115、220、225、230 ビア
128 パッシベーション層
130 キャリア基板
135 薄膜化プロセス
140 厚さ
142、242 保護層
154、254 カラーフィルター層
154A、154B、254A、254B カラーフィルター
160、260 マイクロレンズ層
165、265 ボンディングワイヤ
170、270 ボンディングボール
175、275 間隔距離
180 FSIイメージセンサー装置
Claims (15)
- ボンディングパッド領域と非ボンディングパッド領域とを有する基板と、
前記ボンディングパッド領域の前記基板上に形成され、前記基板向きの上面図において、第一寸法を有する第一ビアと、
前記非ボンディング領域の前記基板上に形成された複数の第二ビアであって、
これら複数の第二ビアはそれぞれ上面図において第二寸法を有し、この第二寸法は前記第一寸法よりも小さいことと、
からなることを特徴とする集積回路。 - 前記第一寸法は30〜200umに及び、前記第二寸法は約0.1〜0.5umに及ぶことを特徴とする請求項1に記載の集積回路。
- 前記非ボンディングパッド領域は、周辺領域と画素領域の少なくとも一つを含み、前記画素領域はイメージセンサーからなることを特徴とする請求項1に記載の集積回路。
- 前記第一ビアに相互接続される第一金属線と、
前記第二ビアに相互接続される第二金属線と、を有する相互接続層を更に備え、
前記第一金属線は、少なくとも一部がボンディングパッドとなることを特徴とする請求項1に記載の集積回路。 - 前記第一金属線は、アルミニウム銅(AlCu)を含み、前記第二金属線とほぼ等しい厚さを有することを特徴とする請求項4に記載の集積回路。
- ボンディング領域と非ボンディング領域を有し、且つ、表面と裏面を有する第一基板と、
前記ボンディング領域の前記第一基板の前記表面の第一導電線と、
前記非ボンディング領域の前記第一基板の前記表面の第二導電線と、
前記第一導電線上に、第一直径を有する第一ビアと、
前記第二導電線上に、前記第一直径より小さい第二直径を有する第二ビアと、
からなることを特徴とする裏面照射型(BSI)イメージセンサー。 - 更に、前記第一基板の前記表面に接合される第二基板と、
前記第一ビア上に形成される第三導電線と、
からなることを特徴とする請求項6に記載のBSIイメージセンサー。 - 前記第一、第二導電線は、第一金属層に形成されることを特徴とする請求項6に記載のBSIイメージセンサー。
- 前記非ボンディング領域は、少なくとも一つのイメージセンサーを有する画素領域からなることを特徴とする請求項6に記載のBSIイメージセンサー。
- 更に、前記第一基板の前記裏面から、前記第一導電線に接合されるソルダーバンプを有することを特徴とする請求項6に記載のBSIイメージセンサー。
- 前記第一直径は30〜200umに及び、前記第二直径は0.1〜0.5umに及ぶことを特徴とする請求項6に記載のBSIイメージセンサー。
- ボンディング領域と非ボンディング領域を有し、且つ、表面と裏面を有する基板と、
前記ボンディング領域の前記基板の前記表面の第一導電線と、
前記非ボンディング領域の前記基板の前記表面の第二導電線と、
前記第一導電線上に、第一直径を有する第一ビアと、
前記第二導電線上に、第二直径を有する第二ビアであって、前記第一直径は前記第二直径より大きいことと、
前記第一ビア上に形成される第三導電線とを備え、この第三導電線はボンディング機構の収容に適応することを特徴とする表面照射型(FSI)イメージセンサー。 - 更に、前記第二ビア上に形成される第四導電線を有し、前記第三、第四導電線は、最上金属層に形成され、前記第一、第二導電層は、前記最上金属層下方の同一金属層に形成されることを特徴とする請求項12に記載のFSIセンサー。
- 前記非ボンディング領域は、少なくとも一つのイメージセンサーを有する画素領域からなることを特徴とする請求項12に記載のFSIセンサー。
- 前記第一直径は30〜200umに及び、前記第二直径は0.1〜0.5umに及ぶことを特徴とする請求項14に記載のFSIセンサー。
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US12/511,789 | 2009-07-29 | ||
US12/511,789 US8344471B2 (en) | 2009-07-29 | 2009-07-29 | CMOS image sensor big via bonding pad application for AICu process |
US12/616,652 | 2009-11-11 | ||
US12/616,652 US8502335B2 (en) | 2009-07-29 | 2009-11-11 | CMOS image sensor big via bonding pad application for AlCu Process |
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