JP2011023740A - アモルファスシリコン薄膜トランジスタを基板の表面に形成する方法 - Google Patents
アモルファスシリコン薄膜トランジスタを基板の表面に形成する方法 Download PDFInfo
- Publication number
- JP2011023740A JP2011023740A JP2010220576A JP2010220576A JP2011023740A JP 2011023740 A JP2011023740 A JP 2011023740A JP 2010220576 A JP2010220576 A JP 2010220576A JP 2010220576 A JP2010220576 A JP 2010220576A JP 2011023740 A JP2011023740 A JP 2011023740A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- edges
- aligned
- edge
- self
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000000758 substrate Substances 0.000 title claims abstract description 19
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims description 56
- 239000010409 thin film Substances 0.000 title claims description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 10
- 238000000059 patterning Methods 0.000 claims description 7
- 238000001459 lithography Methods 0.000 abstract description 17
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 155
- 229910052751 metal Inorganic materials 0.000 description 27
- 239000002184 metal Substances 0.000 description 27
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 238000005530 etching Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- 238000011161 development Methods 0.000 description 7
- 230000018109 developmental process Effects 0.000 description 7
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 238000003491 array Methods 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000002365 multiple layer Substances 0.000 description 3
- -1 phosphorous ions Chemical class 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229910015202 MoCr Inorganic materials 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
- Y10S438/949—Energy beam treating radiation resist on semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
Abstract
【解決手段】ドープ半導体層40をプラズマエンハンスト化学蒸着法(PECVD)を用いて付着し、自己整合絶縁領域のエッジで自己整合接合を生成することにより高精度なゲート/リード整合を行う。次に、ドープ半導体層40を自己整合リソグラフィー法(self−aligned lithography)を用いてパターン形成し、導電性リード62を生成する。該導電性リード62は、最大オーバーラップ距離以下の距離だけ絶縁領域28にオーバーラップする自己整合エッジを有する。例えば、最大オーバーラップ距離は1.0μm未満か0.5μmとすることができ、非常に小さなa−SiTFTを可能にする。
【選択図】図1
Description
22 ゲート領域
28 絶縁領域
32 エッジ
40 ドープ半導体層
42 接合部
50 レジスト層
62 導電性リード
64 オーバーラップ
Claims (1)
- アモルファスシリコン薄膜トランジスタを基板の表面に形成する方法で
あって、
アモルファスシリコン薄膜トランジスタが、
第1及び第2エッジを有するゲート電極を含み、
前記ゲート電極上第1絶縁層を含み、該第1絶縁層は前記ゲート電極の第1及び第2エッジ上に延び、
前記第1絶縁層上に未ドープアモルファスシリコン層を含み、前記未ドープアモルファスシリコン層が前記ゲート電極の第1及び第2エッジを越えて延び、
前記アモルファスシリコン層上に絶縁部を含み、前記絶縁部が前記アモルファスシリコン層に付着された第2絶縁層を第1裏側露光でパターン形成することによって生成され、
前記ゲート電極の第1及び第2エッジとほぼ整合される第1及び第2エッジを有し、前記アモルファスシリコン層が前記絶縁部の第1及び第2エッジの外側に延びる部分を有し、
前記方法が、
ドープ半導体材料のPECVD層を前記絶縁部上及び前記アモルファスシリコン層の前記絶縁部の第1及び第2エッジの外側に延びる部分上に付着するステップを含み、前記ドープ半導体材料のPECVD層を付着する動作が、前記絶縁部の第1及び第2のエッジで前記ドープ半導体層と前記アモルファスシリコン層の前記絶縁部の第1及び第2エッジの外側に延びる部分との間に第1及び第2接合部をそれぞれ生成し、前記第1及び第2接合部が前記ゲート電極の第1及び第2エッジとそれぞれほぼ整合されており、
第2裏側露光で前記ドープ半導体層をパターン形成し、前記第1及び第2接合部からそれぞれ延びる第1及び第2チャネルリードを生成するステップを含み、前記第1及び第2チャネルリードが前記ゲート電極の第1及び第2エッジとそれぞれ整合される第1及び第2自己整合エッジをそれぞれ有するような方法で前記ドープ半導体層のパターン形成動作が実行され、前記第1及び第2自己整合エッジが前記ゲート電極の第1及び第2エッジの内側にあり、所定のオーバーラップ距離以下の距離だけ前記絶縁部にオーバーラップし、前記所定のオーバーラップ距離が1.0μm以下である、前記方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/577,634 US5733804A (en) | 1995-12-22 | 1995-12-22 | Fabricating fully self-aligned amorphous silicon device |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8335050A Division JPH09181328A (ja) | 1995-12-22 | 1996-11-29 | アモルファスシリコン薄膜トランジスタを基板の表面に形成する方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2011023740A true JP2011023740A (ja) | 2011-02-03 |
Family
ID=24309533
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8335050A Pending JPH09181328A (ja) | 1995-12-22 | 1996-11-29 | アモルファスシリコン薄膜トランジスタを基板の表面に形成する方法 |
JP2010220576A Pending JP2011023740A (ja) | 1995-12-22 | 2010-09-30 | アモルファスシリコン薄膜トランジスタを基板の表面に形成する方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8335050A Pending JPH09181328A (ja) | 1995-12-22 | 1996-11-29 | アモルファスシリコン薄膜トランジスタを基板の表面に形成する方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5733804A (ja) |
EP (1) | EP0780892B1 (ja) |
JP (2) | JPH09181328A (ja) |
DE (1) | DE69633267T2 (ja) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100229676B1 (ko) * | 1996-08-30 | 1999-11-15 | 구자홍 | 셀프얼라인 박막트랜지스터 제조방법 |
USRE38466E1 (en) * | 1996-11-12 | 2004-03-16 | Seiko Epson Corporation | Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device |
US5920772A (en) * | 1997-06-27 | 1999-07-06 | Industrial Technology Research Institute | Method of fabricating a hybrid polysilicon/amorphous silicon TFT |
US6107641A (en) * | 1997-09-10 | 2000-08-22 | Xerox Corporation | Thin film transistor with reduced parasitic capacitance and reduced feed-through voltage |
US6504175B1 (en) * | 1998-04-28 | 2003-01-07 | Xerox Corporation | Hybrid polycrystalline and amorphous silicon structures on a shared substrate |
KR100590742B1 (ko) | 1998-05-11 | 2007-04-25 | 삼성전자주식회사 | 액정 표시 장치용 박막 트랜지스터 기판의 제조 방법 |
US6566172B1 (en) * | 1998-06-23 | 2003-05-20 | The Penn State Research Foundation | Method for manufacture of fully self-aligned tri-layer a-Si:H thin film transistors |
KR100451381B1 (ko) | 1998-07-30 | 2005-06-01 | 엘지.필립스 엘시디 주식회사 | 박막트랜지스터및그제조방법 |
US20020121605A1 (en) * | 1999-06-17 | 2002-09-05 | Lutz Fink | Semiconductor sensor and method for its wiring |
DE19927694C1 (de) * | 1999-06-17 | 2000-11-02 | Lutz Fink | Halbleitersensor mit einer Pixelstruktur |
GB9919913D0 (en) | 1999-08-24 | 1999-10-27 | Koninkl Philips Electronics Nv | Thin-film transistors and method for producing the same |
US6545291B1 (en) * | 1999-08-31 | 2003-04-08 | E Ink Corporation | Transistor design for use in the construction of an electronically driven display |
US6245602B1 (en) * | 1999-11-18 | 2001-06-12 | Xerox Corporation | Top gate self-aligned polysilicon TFT and a method for its production |
DE10034873B4 (de) * | 2000-07-18 | 2005-10-13 | Pacifica Group Technologies Pty Ltd | Verfahren und Bremsanlage zum Regeln des Bremsvorgangs bei einem Kraftfahrzeug |
JP2002141514A (ja) * | 2000-11-07 | 2002-05-17 | Sanyo Electric Co Ltd | ボトムゲート型薄膜トランジスタ及びその製造方法 |
TW495986B (en) * | 2001-05-11 | 2002-07-21 | Au Optronics Corp | Method of manufacturing thin film transistor flat panel display |
US7507648B2 (en) * | 2005-06-30 | 2009-03-24 | Ramesh Kakkad | Methods of fabricating crystalline silicon film and thin film transistors |
US7344928B2 (en) * | 2005-07-28 | 2008-03-18 | Palo Alto Research Center Incorporated | Patterned-print thin-film transistors with top gate geometry |
US7943447B2 (en) * | 2007-08-08 | 2011-05-17 | Ramesh Kakkad | Methods of fabricating crystalline silicon, thin film transistors, and solar cells |
JP2009094413A (ja) * | 2007-10-11 | 2009-04-30 | Sumitomo Chemical Co Ltd | 薄膜能動素子、有機発光装置、表示装置、電子デバイスおよび薄膜能動素子の製造方法 |
US11562903B2 (en) | 2019-01-17 | 2023-01-24 | Ramesh kumar Harjivan Kakkad | Method of fabricating thin, crystalline silicon film and thin film transistors |
US11791159B2 (en) | 2019-01-17 | 2023-10-17 | Ramesh kumar Harjivan Kakkad | Method of fabricating thin, crystalline silicon film and thin film transistors |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0262051A (ja) * | 1988-08-26 | 1990-03-01 | Fujitsu Ltd | 薄膜トランジスタの製造方法 |
JPH02215134A (ja) * | 1989-02-15 | 1990-08-28 | Fujitsu Ltd | 薄膜トランジスタの製造方法 |
JPH03185840A (ja) * | 1989-12-15 | 1991-08-13 | Casio Comput Co Ltd | 薄膜トランジスタ |
JPH03186820A (ja) * | 1989-12-15 | 1991-08-14 | Sharp Corp | マトリクス型液晶表示基板の製造方法 |
JPH04326769A (ja) * | 1991-04-26 | 1992-11-16 | Toshiba Corp | 薄膜トランジスタ及びその製造方法 |
JPH05136419A (ja) * | 1991-11-13 | 1993-06-01 | Toshiba Corp | 薄膜トランジスタ |
JPH06188422A (ja) * | 1992-12-18 | 1994-07-08 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
JPH06314789A (ja) * | 1993-04-30 | 1994-11-08 | Sharp Corp | 薄膜トランジスタ |
JPH07142737A (ja) * | 1993-11-18 | 1995-06-02 | Sharp Corp | 薄膜トランジスタの製造方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02295132A (ja) * | 1989-05-09 | 1990-12-06 | Fujitsu Ltd | 薄膜トランジスタの製造方法 |
US5010027A (en) * | 1990-03-21 | 1991-04-23 | General Electric Company | Method for fabricating a self-aligned thin-film transistor utilizing planarization and back-side photoresist exposure |
JP2938121B2 (ja) * | 1990-03-30 | 1999-08-23 | 株式会社東芝 | 薄膜半導体装置の製造方法 |
JPH05183141A (ja) * | 1991-07-12 | 1993-07-23 | Fuji Xerox Co Ltd | カラーイメージセンサ |
US5242530A (en) * | 1991-08-05 | 1993-09-07 | International Business Machines Corporation | Pulsed gas plasma-enhanced chemical vapor deposition of silicon |
KR940007451B1 (ko) * | 1991-09-06 | 1994-08-18 | 주식회사 금성사 | 박막트랜지스터 제조방법 |
US5241192A (en) * | 1992-04-02 | 1993-08-31 | General Electric Company | Fabrication method for a self-aligned thin film transistor having reduced end leakage and device formed thereby |
DE4227096A1 (de) * | 1992-08-17 | 1994-02-24 | Philips Patentverwaltung | Röntgenbilddetektor |
JP2530990B2 (ja) * | 1992-10-15 | 1996-09-04 | 富士通株式会社 | 薄膜トランジスタ・マトリクスの製造方法 |
US5441905A (en) * | 1993-04-29 | 1995-08-15 | Industrial Technology Research Institute | Process of making self-aligned amorphous-silicon thin film transistors |
US5473168A (en) * | 1993-04-30 | 1995-12-05 | Sharp Kabushiki Kaisha | Thin film transistor |
US5385854A (en) * | 1993-07-15 | 1995-01-31 | Micron Semiconductor, Inc. | Method of forming a self-aligned low density drain inverted thin film transistor |
US5471330A (en) * | 1993-07-29 | 1995-11-28 | Honeywell Inc. | Polysilicon pixel electrode |
US5391507A (en) * | 1993-09-03 | 1995-02-21 | General Electric Company | Lift-off fabrication method for self-aligned thin film transistors |
US5597474A (en) * | 1993-10-27 | 1997-01-28 | Exxon Research & Engineering Co. | Production of hydrogen from a fluid coking process using steam reforming |
KR970006733B1 (ko) * | 1993-12-14 | 1997-04-29 | 엘지전자 주식회사 | 박막트랜지스터 제조방법 |
US5491347A (en) * | 1994-04-28 | 1996-02-13 | Xerox Corporation | Thin-film structure with dense array of binary control units for presenting images |
US5486939A (en) * | 1994-04-28 | 1996-01-23 | Xerox Corporation | Thin-film structure with insulating and smoothing layers between crossing conductive lines |
-
1995
- 1995-12-22 US US08/577,634 patent/US5733804A/en not_active Expired - Lifetime
-
1996
- 1996-11-29 JP JP8335050A patent/JPH09181328A/ja active Pending
- 1996-12-19 DE DE1996633267 patent/DE69633267T2/de not_active Expired - Lifetime
- 1996-12-19 EP EP96309288A patent/EP0780892B1/en not_active Expired - Lifetime
-
2010
- 2010-09-30 JP JP2010220576A patent/JP2011023740A/ja active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0262051A (ja) * | 1988-08-26 | 1990-03-01 | Fujitsu Ltd | 薄膜トランジスタの製造方法 |
JPH02215134A (ja) * | 1989-02-15 | 1990-08-28 | Fujitsu Ltd | 薄膜トランジスタの製造方法 |
JPH03185840A (ja) * | 1989-12-15 | 1991-08-13 | Casio Comput Co Ltd | 薄膜トランジスタ |
JPH03186820A (ja) * | 1989-12-15 | 1991-08-14 | Sharp Corp | マトリクス型液晶表示基板の製造方法 |
JPH04326769A (ja) * | 1991-04-26 | 1992-11-16 | Toshiba Corp | 薄膜トランジスタ及びその製造方法 |
JPH05136419A (ja) * | 1991-11-13 | 1993-06-01 | Toshiba Corp | 薄膜トランジスタ |
JPH06188422A (ja) * | 1992-12-18 | 1994-07-08 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
JPH06314789A (ja) * | 1993-04-30 | 1994-11-08 | Sharp Corp | 薄膜トランジスタ |
JPH07142737A (ja) * | 1993-11-18 | 1995-06-02 | Sharp Corp | 薄膜トランジスタの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP0780892A3 (en) | 1997-10-15 |
EP0780892B1 (en) | 2004-09-01 |
US5733804A (en) | 1998-03-31 |
EP0780892A2 (en) | 1997-06-25 |
DE69633267D1 (de) | 2004-10-07 |
DE69633267T2 (de) | 2005-01-13 |
JPH09181328A (ja) | 1997-07-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2011023740A (ja) | アモルファスシリコン薄膜トランジスタを基板の表面に形成する方法 | |
JP2011023741A (ja) | アレイ | |
KR940007451B1 (ko) | 박막트랜지스터 제조방법 | |
USRE41632E1 (en) | Liquid crystal display device and method of manufacturing the same | |
US6403408B1 (en) | Thin-film transistors and method for producing the same | |
US5010027A (en) | Method for fabricating a self-aligned thin-film transistor utilizing planarization and back-side photoresist exposure | |
US7663143B2 (en) | Thin film transistor having a short channel formed by using an exposure mask with slits | |
JP3510681B2 (ja) | 薄膜トランジスタ・アセンブリを製造する方法 | |
EP2530720A1 (en) | Manufacture methods of thin film transistor and array substrate and mask | |
CN1226778C (zh) | 改进工艺窗口制作全自对准薄膜场效应晶体管的方法 | |
JP2678044B2 (ja) | アクティブマトリクス基板の製造方法 | |
KR20000059689A (ko) | 액정표시장치용박막트랜지스터기판의제조방법 | |
JP3484168B2 (ja) | 薄膜トランジスタを形成する方法 | |
US6316295B1 (en) | Thin film transistor and its fabrication | |
US7098091B2 (en) | Method for fabricating thin film transistors | |
JPH05152325A (ja) | 薄膜トランジスタの製造方法 | |
JPH04505830A (ja) | トップハット形ゲート電極形式によるセルフアラインtftにおけるソース/ドレイン―ゲートの重なりの確実な制御 | |
JP3358284B2 (ja) | 薄膜トランジスタの製造方法 | |
JPH05152326A (ja) | 薄膜トランジスタの製造方法 | |
JP2002523898A (ja) | 薄膜トランジスタおよびその製造方法 | |
KR0156215B1 (ko) | 완전 자기정렬형 박막트랜지스터 및 그 제조방법 | |
JPH0360042A (ja) | 薄膜トランジスタの製造方法 | |
JPH05121435A (ja) | 薄膜トランジスタ素子アレイとその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101027 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20101027 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20121031 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121107 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130131 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130205 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130501 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20130703 |