JP2011018894A - プラズマ処理装置用の消耗部品の再利用方法 - Google Patents
プラズマ処理装置用の消耗部品の再利用方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 80
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 140
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 132
- 238000004140 cleaning Methods 0.000 claims abstract description 55
- 238000010030 laminating Methods 0.000 claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- 238000009832 plasma treatment Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 238000004381 surface treatment Methods 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims 4
- 238000001020 plasma etching Methods 0.000 abstract description 29
- 238000000151 deposition Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 39
- 239000010410 layer Substances 0.000 description 29
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 20
- 239000010439 graphite Substances 0.000 description 18
- 229910002804 graphite Inorganic materials 0.000 description 18
- 239000002253 acid Substances 0.000 description 14
- 239000003513 alkali Substances 0.000 description 14
- 238000003475 lamination Methods 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- 238000004064 recycling Methods 0.000 description 10
- 238000005422 blasting Methods 0.000 description 9
- 239000012535 impurity Substances 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000003507 refrigerant Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000004506 ultrasonic cleaning Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- -1 fluorine ions Chemical class 0.000 description 4
- 239000002699 waste material Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 239000005749 Copper compound Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013590 bulk material Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 150000001880 copper compounds Chemical class 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 235000011121 sodium hydroxide Nutrition 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 206010067482 No adverse event Diseases 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02079—Cleaning for reclaiming
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract
【解決手段】炭化珪素がCVDによって積層されて炭化硅素塊41が生成され、炭化硅素塊41が加工されてフォーカスリング25が製造され、製造されたフォーカスリング25がプラズマ処理装置10に装着された後、プラズマエッチング処理が所定の回数ほど繰り返され、プラズマエッチング処理中に消耗したフォーカスリング25’の表面が酸洗浄され、洗浄されたフォーカスリング25の表面へCVDによって炭化硅素が積層されて炭化硅素塊42が生成され、炭化硅素塊42が加工されてフォーカスリング25”が再製造され、再製造されたフォーカスリング25”がプラズマ処理装置10に装着された後、プラズマエッチング処理が所定の回数ほど繰り返される。
【選択図】図1
Description
図3は、図1における上部電極板を示す拡大図であり、図3(A)は平面図であり、図3(B)は図3(A)における線III−IIIに沿う断面図である。
R=[1−(102087/147857)]×100 = 31.0 (%)
となる。
25 フォーカスリング
31 上部電極板
38 接地電極
39 アウターリング
Claims (7)
- 炭化珪素をCVD(Chemical Vapor Deposition)によって積層して炭化硅素塊を生成する炭化硅素塊生成ステップと、
前記炭化硅素塊を加工して所定の形状のプラズマ処理装置用の消耗部品を製造する消耗部品製造ステップと、
前記製造された消耗部品を用いて基板にプラズマ処理を施す第1のプラズマ処理ステップと、
所定時間に亘る前記プラズマ処理によって消耗した前記消耗部品の表面を洗浄する表面洗浄ステップと、
前記洗浄された消耗部品の表面へCVDによって炭化硅素を積層する炭化硅素積層ステップと、
前記炭化硅素が表面へ積層された消耗部品を加工して前記所定の形状の消耗部品を再製造する消耗部品再製造ステップと、
前記再製造された消耗部品を用いて基板にプラズマ処理を施す第2のプラズマ処理ステップとを有することを特徴とするプラズマ処理装置用の消耗部品の再利用方法。 - 前記炭化硅素塊生成ステップは、核の表面にCVDによって炭化珪素を積層して炭化硅素塊を生成するものであり、前記消耗部品製造ステップは、前記炭化珪素塊を、前記核を含まないように加工して前記消耗部品を製造することを特徴とする請求項1記載のプラズマ処理装置用の消耗部品の再利用方法。
- 前記表面洗浄ステップと、前記炭化硅素積層ステップと、前記消耗部品再製造ステップと、前記第2のプラズマ処理ステップとを順に繰り返すことを特徴とする請求項1又は2記載のプラズマ処理装置用の消耗部品の再利用方法。
- 前記消耗部品再製造ステップ後、且つ前記第2のプラズマ処理ステップの前に、前記再製造された消耗部品を高温雰囲気中に置き、該高温雰囲気へ炭化硅素の原料ガスを供給する表面処理ステップをさらに有することを特徴とする請求項1乃至3のいずれか1項に記載のプラズマ処理装置用の消耗部品の再利用方法。
- 前記表面洗浄ステップでは、薬液を用いて前記消耗部品の表面を洗浄することを特徴とする請求項1乃至4のいずれか1項に記載のプラズマ処理装置用の消耗部品の再利用方法。
- 前記表面洗浄ステップでは、プラズマを用いて前記消耗部品の表面をスパッタすることを特徴とする請求項1乃至4のいずれか1項に記載のプラズマ処理装置用の消耗部品の再利用方法。
- 前記消耗部品はフォーカスリング又は貫通する複数のガス孔を有する電極板であることを特徴とする請求項1乃至6のいずれか1項に記載のプラズマ処理装置用の消耗部品の再利用方法。
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JP2012186224A (ja) * | 2011-03-03 | 2012-09-27 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2014515882A (ja) * | 2011-04-11 | 2014-07-03 | アプライド マテリアルズ インコーポレイテッド | ガス分配プレート表面を改修するための方法及び装置 |
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JP2017175138A (ja) * | 2014-12-26 | 2017-09-28 | エーサット株式会社 | プラズマエッチング装置用の電極およびプラズマエッチング装置 |
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Also Published As
Publication number | Publication date |
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CN101920256A (zh) | 2010-12-22 |
US20130284375A1 (en) | 2013-10-31 |
TWI587748B (zh) | 2017-06-11 |
KR101814201B1 (ko) | 2018-01-02 |
JP5595795B2 (ja) | 2014-09-24 |
US20120258258A1 (en) | 2012-10-11 |
KR20100133910A (ko) | 2010-12-22 |
US20100314356A1 (en) | 2010-12-16 |
US8475622B2 (en) | 2013-07-02 |
TW201130390A (en) | 2011-09-01 |
CN101920256B (zh) | 2012-12-05 |
US8221579B2 (en) | 2012-07-17 |
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