JP2011011939A5 - - Google Patents

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Publication number: JP2011011939A5
Authority: JP; Japan
Prior art keywords: single crystal; etching; silicon single; silicon wafer; silicon
Prior art date: 2009-07-01
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP2009157032A

Other languages

English (en)

Japanese (ja)

Other versions

JP5195671B2 (ja

JP2011011939A (ja

Filing date

2009-07-01

Publication date

2012-03-08

2009-07-01 Application filed filed Critical

2009-07-01 Priority to JP2009157032A priority Critical patent/JP5195671B2/ja

2009-07-01 Priority claimed from JP2009157032A external-priority patent/JP5195671B2/ja

2011-01-20 Publication of JP2011011939A publication Critical patent/JP2011011939A/ja

2012-03-08 Publication of JP2011011939A5 publication Critical patent/JP2011011939A5/ja

2013-05-08 Application granted granted Critical

2013-05-08 Publication of JP5195671B2 publication Critical patent/JP5195671B2/ja

Status Active legal-status Critical Current

2029-07-01 Anticipated expiration legal-status Critical

Links

XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 23
229910052710 silicon Inorganic materials 0.000 claims 23
239000010703 silicon Substances 0.000 claims 23
238000005530 etching Methods 0.000 claims 11
238000004519 manufacturing process Methods 0.000 claims 7
238000001020 plasma etching Methods 0.000 claims 5
KRHYYFGTRYWZRS-UHFFFAOYSA-N HF Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 2
238000000034 method Methods 0.000 claims 2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
229910052814 silicon oxide Inorganic materials 0.000 claims 2
210000004940 Nucleus Anatomy 0.000 claims 1
239000007864 aqueous solution Substances 0.000 claims 1
GRYLNZFGIOXLOG-UHFFFAOYSA-N nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 1

JP2009157032A 2009-07-01 2009-07-01 シリコン単結晶の製造方法 Active JP5195671B2 (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP2009157032A JP5195671B2 (ja)	2009-07-01	2009-07-01	シリコン単結晶の製造方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2009157032A JP5195671B2 (ja)	2009-07-01	2009-07-01	シリコン単結晶の製造方法

Related Child Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2013002674A Division JP5668764B2 (ja)	2013-01-10	2013-01-10	シリコン単結晶の製造方法

Publications (3)

Publication Number	Publication Date
JP2011011939A JP2011011939A (ja)	2011-01-20
JP2011011939A5 true JP2011011939A5 (ko)	2012-03-08
JP5195671B2 JP5195671B2 (ja)	2013-05-08

Family

ID=43591201

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2009157032A Active JP5195671B2 (ja)	2009-07-01	2009-07-01	シリコン単結晶の製造方法

Country Status (1)

Country	Link
JP (1)	JP5195671B2 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP5668764B2 (ja) *	2013-01-10	2015-02-12	株式会社Sumco	シリコン単結晶の製造方法
JP6981750B2 (ja) *	2016-12-21	2021-12-17	株式会社Sumco	シリコン単結晶の製造方法およびシリコン単結晶

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3451955B2 (ja) *	1998-08-13	2003-09-29	株式会社豊田中央研究所	結晶欠陥の評価方法及び結晶欠陥評価装置
JP4254584B2 (ja) *	2004-03-15	2009-04-15	信越半導体株式会社	結晶欠陥の評価方法
JP5204415B2 (ja) *	2006-03-03	2013-06-05	国立大学法人新潟大学	ＣＺ法によるＳｉ単結晶インゴットの製造方法
JP2008162832A (ja) *	2006-12-27	2008-07-17	Toyota Central R&D Labs Inc	ウェーハの検査方法とウェーハの検査装置

2009
- 2009-07-01 JP JP2009157032A patent/JP5195671B2/ja active Active

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