JP2010522440A - 二重構造を有するled及びそのledの駆動装置 - Google Patents
二重構造を有するled及びそのledの駆動装置 Download PDFInfo
- Publication number
- JP2010522440A JP2010522440A JP2010500808A JP2010500808A JP2010522440A JP 2010522440 A JP2010522440 A JP 2010522440A JP 2010500808 A JP2010500808 A JP 2010500808A JP 2010500808 A JP2010500808 A JP 2010500808A JP 2010522440 A JP2010522440 A JP 2010522440A
- Authority
- JP
- Japan
- Prior art keywords
- led
- type semiconductor
- current
- double structure
- structure according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 113
- 230000009977 dual effect Effects 0.000 claims description 9
- 238000005530 etching Methods 0.000 description 8
- VMXJCRHCUWKQCB-UHFFFAOYSA-N NPNP Chemical compound NPNP VMXJCRHCUWKQCB-UHFFFAOYSA-N 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000000295 complement effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070028004A KR100850784B1 (ko) | 2007-03-22 | 2007-03-22 | 이중 구조를 갖는 엘이디 및 그 엘이디의 구동장치 |
PCT/KR2007/003177 WO2008114907A1 (en) | 2007-03-22 | 2007-06-29 | Light emitting diode(led) having a dual structure and a driving unit thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2010522440A true JP2010522440A (ja) | 2010-07-01 |
Family
ID=39766003
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010500808A Pending JP2010522440A (ja) | 2007-03-22 | 2007-06-29 | 二重構造を有するled及びそのledの駆動装置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2010522440A (ko) |
KR (1) | KR100850784B1 (ko) |
WO (1) | WO2008114907A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017028265A (ja) * | 2015-07-16 | 2017-02-02 | 日亜化学工業株式会社 | 発光素子及び発光装置 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102419593B1 (ko) * | 2017-10-23 | 2022-07-12 | 삼성전자주식회사 | 발광 다이오드 및 그의 제조 방법 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02271682A (ja) * | 1989-04-13 | 1990-11-06 | Nec Corp | 面発光ダイオードアレイ |
JPH07335002A (ja) * | 1994-06-07 | 1995-12-22 | Kaapura:Kk | 車両用表示灯 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61111592A (ja) | 1984-07-25 | 1986-05-29 | Hitachi Tobu Semiconductor Ltd | 発光素子および発光素子を組み込んだ光電子装置 |
JPH0750450A (ja) * | 1993-08-04 | 1995-02-21 | Furukawa Electric Co Ltd:The | 並列型光半導体素子 |
JPH08167737A (ja) * | 1994-12-09 | 1996-06-25 | Toyoda Gosei Co Ltd | 3族窒化物半導体発光装置 |
KR100524656B1 (ko) * | 2003-09-30 | 2005-10-31 | 서울반도체 주식회사 | 다색 발광다이오드 패키지 및 다색 발광다이오드 시스템 |
JP2005191530A (ja) * | 2003-12-03 | 2005-07-14 | Sumitomo Electric Ind Ltd | 発光装置 |
KR100576855B1 (ko) * | 2003-12-20 | 2006-05-10 | 삼성전기주식회사 | 고출력 플립 칩 발광다이오드 |
KR100585014B1 (ko) * | 2004-07-01 | 2006-05-29 | 서울반도체 주식회사 | 일체형 열전달 슬러그가 형성된 발광다이오드 패키지 및 그 제조방법 |
-
2007
- 2007-03-22 KR KR1020070028004A patent/KR100850784B1/ko not_active IP Right Cessation
- 2007-06-29 JP JP2010500808A patent/JP2010522440A/ja active Pending
- 2007-06-29 WO PCT/KR2007/003177 patent/WO2008114907A1/en active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02271682A (ja) * | 1989-04-13 | 1990-11-06 | Nec Corp | 面発光ダイオードアレイ |
JPH07335002A (ja) * | 1994-06-07 | 1995-12-22 | Kaapura:Kk | 車両用表示灯 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017028265A (ja) * | 2015-07-16 | 2017-02-02 | 日亜化学工業株式会社 | 発光素子及び発光装置 |
Also Published As
Publication number | Publication date |
---|---|
KR100850784B1 (ko) | 2008-08-06 |
WO2008114907A1 (en) | 2008-09-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110906 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20120221 |