JP2010507259A - Sti用の二酸化シリコンの高品質誘電体膜の形成:harpii−遠隔プラズマ増強型堆積プロセス−のための異なるシロキサンベースの前駆物質の使用 - Google Patents
Sti用の二酸化シリコンの高品質誘電体膜の形成:harpii−遠隔プラズマ増強型堆積プロセス−のための異なるシロキサンベースの前駆物質の使用 Download PDFInfo
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- JP2010507259A JP2010507259A JP2009533455A JP2009533455A JP2010507259A JP 2010507259 A JP2010507259 A JP 2010507259A JP 2009533455 A JP2009533455 A JP 2009533455A JP 2009533455 A JP2009533455 A JP 2009533455A JP 2010507259 A JP2010507259 A JP 2010507259A
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- organosilicon
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- dielectric material
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- 239000002243 precursor Substances 0.000 title claims abstract description 124
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 title claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title description 32
- 230000015572 biosynthetic process Effects 0.000 title description 8
- 238000005137 deposition process Methods 0.000 title description 5
- 235000012239 silicon dioxide Nutrition 0.000 title description 4
- 239000000377 silicon dioxide Substances 0.000 title description 4
- 238000000034 method Methods 0.000 claims abstract description 120
- 238000000151 deposition Methods 0.000 claims abstract description 77
- 230000008021 deposition Effects 0.000 claims abstract description 62
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 59
- 239000003989 dielectric material Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 39
- 239000001301 oxygen Substances 0.000 claims abstract description 37
- 238000011049 filling Methods 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 claims description 42
- 238000000137 annealing Methods 0.000 claims description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 16
- 229910052799 carbon Inorganic materials 0.000 claims description 16
- -1 trimethoxysiloxane Chemical compound 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 11
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 9
- 229910001882 dioxygen Inorganic materials 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 7
- 229910018557 Si O Inorganic materials 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 5
- 229910002808 Si–O–Si Inorganic materials 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- QHAHOIWVGZZELU-UHFFFAOYSA-N trichloro(trichlorosilyloxy)silane Chemical compound Cl[Si](Cl)(Cl)O[Si](Cl)(Cl)Cl QHAHOIWVGZZELU-UHFFFAOYSA-N 0.000 claims description 5
- CLXMTJZPFVPWAX-UHFFFAOYSA-N trichloro-[dichloro(trichlorosilyloxy)silyl]oxysilane Chemical compound Cl[Si](Cl)(Cl)O[Si](Cl)(Cl)O[Si](Cl)(Cl)Cl CLXMTJZPFVPWAX-UHFFFAOYSA-N 0.000 claims description 5
- GJLIVGPJMMKPGI-UHFFFAOYSA-N dimethyl bis(trimethoxysilyl) silicate Chemical compound CO[Si](OC)(OC)O[Si](OC)(OC)O[Si](OC)(OC)OC GJLIVGPJMMKPGI-UHFFFAOYSA-N 0.000 claims description 4
- POVQBCXZUZAICL-UHFFFAOYSA-N methoxy trimethyl silicate Chemical compound [Si](OC)(OC)(OC)OOC POVQBCXZUZAICL-UHFFFAOYSA-N 0.000 claims description 4
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims description 4
- XOAJIYVOSJHEQB-UHFFFAOYSA-N trimethyl trimethoxysilyl silicate Chemical compound CO[Si](OC)(OC)O[Si](OC)(OC)OC XOAJIYVOSJHEQB-UHFFFAOYSA-N 0.000 claims description 4
- QMGHYYDVILNQLH-UHFFFAOYSA-N 2,3,3,4,4,6-hexamethoxyoxazadisilinane Chemical compound COC1C[Si](OC)(OC)[Si](OC)(OC)N(OC)O1 QMGHYYDVILNQLH-UHFFFAOYSA-N 0.000 claims description 3
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims description 3
- 229910007991 Si-N Inorganic materials 0.000 claims description 3
- 229910006294 Si—N Inorganic materials 0.000 claims description 3
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims description 3
- ICSWLKDKQBNKAY-UHFFFAOYSA-N 1,1,3,3,5,5-hexamethyl-1,3,5-trisilinane Chemical compound C[Si]1(C)C[Si](C)(C)C[Si](C)(C)C1 ICSWLKDKQBNKAY-UHFFFAOYSA-N 0.000 claims description 2
- KFLHMWBBLSRAQO-UHFFFAOYSA-N 2,3,3,4,4,6-hexaethoxyoxazadisilinane Chemical compound CCOC1C[Si](OCC)(OCC)[Si](OCC)(OCC)N(OCC)O1 KFLHMWBBLSRAQO-UHFFFAOYSA-N 0.000 claims description 2
- MCGDRJIUUUZVTJ-UHFFFAOYSA-N 2,3,3,4,4,6-hexamethoxy-6-methyloxazadisilinane Chemical compound CON1OC(C)(OC)C[Si](OC)(OC)[Si]1(OC)OC MCGDRJIUUUZVTJ-UHFFFAOYSA-N 0.000 claims description 2
- DZYCBXVXMAINQR-UHFFFAOYSA-N 6-chloro-2,3,3,4,4,6-hexamethoxyoxazadisilinane Chemical compound CON1OC(Cl)(OC)C[Si](OC)(OC)[Si]1(OC)OC DZYCBXVXMAINQR-UHFFFAOYSA-N 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims description 2
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims 2
- 230000008569 process Effects 0.000 description 37
- 229910052814 silicon oxide Inorganic materials 0.000 description 24
- 238000002156 mixing Methods 0.000 description 13
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 12
- 238000012545 processing Methods 0.000 description 12
- 238000009826 distribution Methods 0.000 description 11
- 150000003961 organosilicon compounds Chemical class 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 125000003545 alkoxy group Chemical group 0.000 description 8
- 238000010494 dissociation reaction Methods 0.000 description 7
- 230000005593 dissociations Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000012686 silicon precursor Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000012159 carrier gas Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 238000004590 computer program Methods 0.000 description 5
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- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- OLBVUFHMDRJKTK-UHFFFAOYSA-N [N].[O] Chemical class [N].[O] OLBVUFHMDRJKTK-UHFFFAOYSA-N 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 125000006273 (C1-C3) alkyl group Chemical group 0.000 description 2
- OBOXTJCIIVUZEN-UHFFFAOYSA-N [C].[O] Chemical class [C].[O] OBOXTJCIIVUZEN-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- VOSJXMPCFODQAR-UHFFFAOYSA-N ac1l3fa4 Chemical compound [SiH3]N([SiH3])[SiH3] VOSJXMPCFODQAR-UHFFFAOYSA-N 0.000 description 2
- 125000003668 acetyloxy group Chemical group [H]C([H])([H])C(=O)O[*] 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- LICVGLCXGGVLPA-UHFFFAOYSA-N disilanyl(disilanylsilyl)silane Chemical compound [SiH3][SiH2][SiH2][SiH2][SiH2][SiH3] LICVGLCXGGVLPA-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
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- 230000006870 function Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
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- 230000004048 modification Effects 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- RHUNFORBKSDWIY-UHFFFAOYSA-N 1,2,3,4,5,6-hexamethoxy-1,2,3,4,5,6-hexamethylhexasilinane Chemical compound CO[Si]1(C)[Si](C)(OC)[Si](C)(OC)[Si](C)(OC)[Si](C)(OC)[Si]1(C)OC RHUNFORBKSDWIY-UHFFFAOYSA-N 0.000 description 1
- KSZFBXOYNRHXCD-UHFFFAOYSA-N 2,2,3,3,5,5,6,6-octamethyl-1,4,2,3,5,6-dioxatetrasilinane Chemical compound C[Si]1(C)O[Si](C)(C)[Si](C)(C)O[Si]1(C)C KSZFBXOYNRHXCD-UHFFFAOYSA-N 0.000 description 1
- DZLQWMNVOBAZGC-UHFFFAOYSA-N 5-methyl-4,6,11-trioxa-1-aza-5-silabicyclo[3.3.3]undecane Chemical compound O1CCN2CCO[Si]1(C)OCC2 DZLQWMNVOBAZGC-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical group [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- ADKPKEZZYOUGBZ-UHFFFAOYSA-N [C].[O].[Si] Chemical compound [C].[O].[Si] ADKPKEZZYOUGBZ-UHFFFAOYSA-N 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical group [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- LUXIMSHPDKSEDK-UHFFFAOYSA-N bis(disilanyl)silane Chemical compound [SiH3][SiH2][SiH2][SiH2][SiH3] LUXIMSHPDKSEDK-UHFFFAOYSA-N 0.000 description 1
- GADSHBHCKVKXLO-UHFFFAOYSA-N bis(disilanylsilyl)silane Chemical compound [SiH3][SiH2][SiH2][SiH2][SiH2][SiH2][SiH3] GADSHBHCKVKXLO-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
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- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
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- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- GCOJIFYUTTYXOF-UHFFFAOYSA-N hexasilinane Chemical compound [SiH2]1[SiH2][SiH2][SiH2][SiH2][SiH2]1 GCOJIFYUTTYXOF-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
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- 238000009434 installation Methods 0.000 description 1
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- OWKFQWAGPHVFRF-UHFFFAOYSA-N n-(diethylaminosilyl)-n-ethylethanamine Chemical compound CCN(CC)[SiH2]N(CC)CC OWKFQWAGPHVFRF-UHFFFAOYSA-N 0.000 description 1
- SSCVMVQLICADPI-UHFFFAOYSA-N n-methyl-n-[tris(dimethylamino)silyl]methanamine Chemical compound CN(C)[Si](N(C)C)(N(C)C)N(C)C SSCVMVQLICADPI-UHFFFAOYSA-N 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
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- ZGTXAJUQIAYLOM-UHFFFAOYSA-N octasilocane Chemical compound [SiH2]1[SiH2][SiH2][SiH2][SiH2][SiH2][SiH2][SiH2]1 ZGTXAJUQIAYLOM-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
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- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- CVLHDNLPWKYNNR-UHFFFAOYSA-N pentasilolane Chemical compound [SiH2]1[SiH2][SiH2][SiH2][SiH2]1 CVLHDNLPWKYNNR-UHFFFAOYSA-N 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000012713 reactive precursor Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- XJKVPKYVPCWHFO-UHFFFAOYSA-N silicon;hydrate Chemical compound O.[Si] XJKVPKYVPCWHFO-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- AKYUXYJGXHZKLL-UHFFFAOYSA-N triethoxy(triethoxysilyl)silane Chemical compound CCO[Si](OCC)(OCC)[Si](OCC)(OCC)OCC AKYUXYJGXHZKLL-UHFFFAOYSA-N 0.000 description 1
- LMQGXNPPTQOGDG-UHFFFAOYSA-N trimethoxy(trimethoxysilyl)silane Chemical compound CO[Si](OC)(OC)[Si](OC)(OC)OC LMQGXNPPTQOGDG-UHFFFAOYSA-N 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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Abstract
【解決手段】 方法は、有機シリコン前駆物質と酸素前駆物質を堆積チャンバに導入するステップを含む。有機シリコン前駆物質のC:Si原子比は、8未満であり、酸素前駆物質は、堆積チャンバの外で生成される原子状酸素を含む。前駆物質が反応して、ギャップ内に誘電体層を形成する。ギャップを誘電材料で充填する方法も記載する。これらの方法は、C:Si原子比が8未満の有機シリコン前駆物質と酸素前駆物質を供給するステップと、前駆物質からプラズマを生成させて、ギャップ内に誘電材料の第一部分を堆積させるステップとを含んでいる。誘電材料がエッチングされてもよく、誘電材料の第二部分がギャップ内に形成されてもよい。誘電材料の第一部分と第二部分がアニールされてもよい。
【選択図】図2
Description
[0022]図1は、本発明の実施形態による誘電体堆積の簡易化した概略を示すフローチャートである。図示される方法100は、有機シリコン前駆物質102と酸素前駆物質104を堆積チャンバに導入することを含んでいる。前駆物質はチャンバ内で反応して、基板106のギャップ内と表面上に誘電体層を形成する。
[0062]本発明の実施形態を実施することができる堆積システムは、他の種類のシステムの中でも、高密度プラズマ化学気相堆積(HDP-CVD)システム、プラズマ増強型化学気相堆積(PECVD)システム、大気圧未満化学気相堆積(SACVD)システム、熱化学堆積気相システムを含むのがよい。本発明の実施形態を実施することができるCVDシステムの個々の例としては、カリフォルニア州サンタクララのAppliedMaterials社から入手可能なCENTURA ULTIMATMHDP-CVDチャンバ/システムやPRODUCERTMRECVDチャンバ/システムが挙げられる。
或いはその組み合わせ)は、平行な同心円の形で2回のフル回転をするように構成されたヒータ素子に組み込まれた組み込み型の単一ループを用いて抵抗的に加熱される。ヒータ素子の外側の部分は、支持プラッタの周辺に隣接して取り付けられており、一方内側の部分は、より小さな半径を持つ同心円の通路の上を通っている。ヒータ素子への結線は、ペデスタル12の軸を通って配線される。
Claims (37)
- 基板上に形成されるギャップに誘電体層を堆積させる方法であって、方法が:
有機シリコン前駆物質と酸素前駆物質を堆積チャンバに導入するステップであって、該有機シリコン前駆物質のC:Si原子比が8未満であり、該酸素前駆物質が該堆積チャンバの外で生成される原子状酸素を含む、前記ステップと;
該前駆物質を反応させて、該ギャップ内に該誘電体層を形成するステップと;
を含む、前記方法。 - 該有機シリコン前駆物質のO:Si比が3より大きい、請求項1に記載の方法。
- 該有機シリコン前駆物質のO:Si比が4より大きい、請求項1に記載の方法。
- 該有機シリコン前駆物質が、Si-O-Si結合を含む、請求項1に記載の方法。
- 該有機シリコン前駆物質が、シロキサンを含む、請求項1に記載の方法。
- 該シロキサンが、トリエトキシシロキサン,テトラメトキシシロキサン、トリメトキシシロキサン、ヘキサメトキシジシロキサン、オクタメトキシトリシロキサン、及びオクタメトキシドデカシロキサンからなる群より選ばれる、請求項5に記載の方法。
- 該有機シリコン前駆物質が、シラゾキサンを含む、請求項1に記載の方法。
- 該シラゾキサンが、ヘキサメトキシジシラゾキサン、メチルヘキサメトキシジシラゾキサン、クロロヘキサメトキシジシラゾキサン、ヘキサエトキシジシラゾキサン、オクタメトキシサイクリックシラゾキサン、及びノナメトキシトリシラゾキサンからなる群より選ばれる、請求項7に記載の方法。
- 該有機シリコン前駆物質が、ハロゲン化シロキサンを含む、請求項1に記載の方法。
- 該ハロゲン化シロキサンが、テトラクロロシラン、ジクロロジエトキシシロキサン、クロロトリエトキシシロキサン,ヘキサクロロジシロキサン、及びオクタクロロトリシロキサンからなる群より選ばれる、請求項9に記載の方法。
- 該有機シリコン前駆物質が、アミノシラン、アルキルジシラン、アルコキジシラン、アルコキシアルキルジシラン、アルコキシアセトキシジシラン、又はシクロシランを含む、請求項1に記載の方法。
- 該酸素前駆物質が、更に、分子酸素、オゾン、水、過酸化水素、又は二酸化窒素を含む、請求項1に記載の方法。
- 該原子状酸素が:
アルゴンを含むガス混合物からプラズマを形成する工程と;
該プラズマに酸素源を導入する工程であって、該酸素源が解離して、該原子状酸素を形成する、前記工程と;
によって形成される、請求項1に記載の方法。 - 該酸素源が、分子酸素、オゾン又は二酸化窒素を含む、請求項13に記載の方法。
- 該方法が、該有機シリコンと酸素前駆物質から該堆積チャンバ内にプラズマを形成するステップを更に含む、請求項1に記載の方法。
- 該方法が、該誘電体層をエッチングして、該層内の炭素含量を低減させるステップを更に含む、請求項1に記載の方法。
- 該方法が、該ギャップ内の該誘電体層をアニールするステップを更に含む、請求項1に記載の方法。
- ギャップを誘電材料で充填する方法であって、該方法が:
有機シリコン前駆物質と酸素前駆物質を堆積チャンバに供給するステップであって、該有機シリコン前駆物質のC:Si原子比が8未満である、前記ステップと;
該堆積チャンバ内で該前駆物質からのプラズマを生成するステップであって、該プラズマが該ギャップ内に該誘電材料の第一部分を堆積させる、前記ステップと;
該誘電材料の該第一部分をエッチングして、該材料中の炭素含量を低減させるステップと;
該ギャップ内に該誘電材料の第二部分を堆積させるステップと;
該ギャップ内の該誘電材料の該第一部分と第二部分をアニールするステップと;
を含む、前記方法。 - 該有機シリコン前駆物質のC:Si比が、約6以下である、請求項18に記載の方法。
- 該有機シリコン前駆物質のO:Si比が、約3以上である、請求項18に記載の方法。
- 該有機シリコン前駆物質が、Si-O-Si結合を含む、請求項18に記載の方法。
- 該有機シリコン前駆物質が、シラゾキサンを含む、請求項18に記載の方法。
- 該方法が、シラゾキサン中のSi-N結合を酸化するステップと、Si-O結合を形成するステップを含む、請求項22に記載の方法。
- 該Si-N結合が、離れて生成された原子状酸素前駆物質で酸化される、請求項23に記載の方法。
- 該有機シリコン前駆物質が、ハロゲン化シロキサンを含む、請求項18に記載の方法。
- 該方法が、該ハロゲン化シロキサン中のSi-X結合を酸化するステップとSi-O結合を形成するステップであって、Xがハロゲン原子である、前記ステップとを含む、請求項25に記載の方法。
- 該方法が、該アニールの前に該誘電材料の該第二部分をエッチングするステップを含む、請求項18に記載の方法。
- 該酸素前駆物質が、該堆積チャンバの外で生成される原子状酸素を含む、請求項18に記載の方法。
- 基板上のギャップ内に誘電材料を堆積させ、アニールする方法であって、該方法が:
有機シリコン前駆物質と酸素前駆物質を堆積チャンバに供給するステップであって、該有機シリコン前駆物質のC:Si原子比が8未満である、前記ステップと;
該前駆物質を反応させて、該ギャップ内に該誘電材料を堆積させるステップと;
堆積された該誘電材料に熱アニールを行うステップと;
堆積された該誘電材料にプラズマアニールを行うステップと;
を含む、前記方法。 - 該熱アニールが、該誘電材料を約300℃〜約600℃の温度に約1分〜約30分間加熱する工程を含む、請求項29に記載の方法。
- 該プラズマアニールが、該誘電材料を高密度プラズマに約1分〜約10分間曝す工程を含む、請求項29に記載の方法。
- 該有機シリコン前駆物質のC:Si比が、約6以下である、請求項29に記載の方法。
- 該有機シリコン前駆物質のO:Si比が、約3以上である、請求項29に記載の方法。
- 該有機シリコン前駆物質が、Si-O-Si結合を含む、請求項29に記載の方法。
- 該有機シリコン前駆物質が、シロキサンを含む、請求項29に記載の方法。
- 該有機シリコン前駆物質が、シラゾキサン或いはハロゲン化シロキサンを含む、請求項29に記載の方法。
- 該酸素前駆物質が、該堆積チャンバの外で生成される原子状酸素を含む、請求項29に記載の方法。
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TW200828437A (en) | 2008-07-01 |
TWI349309B (en) | 2011-09-21 |
WO2008048862A2 (en) | 2008-04-24 |
KR20130114269A (ko) | 2013-10-16 |
CN101528974A (zh) | 2009-09-09 |
EP2082078A2 (en) | 2009-07-29 |
KR20090081396A (ko) | 2009-07-28 |
JP5444406B2 (ja) | 2014-03-19 |
JP4987083B2 (ja) | 2012-07-25 |
US20070281495A1 (en) | 2007-12-06 |
EP2503022A1 (en) | 2012-09-26 |
KR101329285B1 (ko) | 2013-11-14 |
CN101528974B (zh) | 2013-07-17 |
WO2008048862A3 (en) | 2008-10-09 |
US7498273B2 (en) | 2009-03-03 |
JP2012169658A (ja) | 2012-09-06 |
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