JP2010504640A - 電流分散のための電極延長部を有する発光ダイオード - Google Patents
電流分散のための電極延長部を有する発光ダイオード Download PDFInfo
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- JP2010504640A JP2010504640A JP2009529091A JP2009529091A JP2010504640A JP 2010504640 A JP2010504640 A JP 2010504640A JP 2009529091 A JP2009529091 A JP 2009529091A JP 2009529091 A JP2009529091 A JP 2009529091A JP 2010504640 A JP2010504640 A JP 2010504640A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 87
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 230000002093 peripheral effect Effects 0.000 claims abstract description 16
- 239000010410 layer Substances 0.000 description 94
- 238000000034 method Methods 0.000 description 7
- 239000006185 dispersion Substances 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- Engineering & Computer Science (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
【選択図】図1
Description
Claims (8)
- 基板上に形成された下部半導体層と、
前記下部半導体層の周縁領域が露出されるように前記下部半導体層の上部に設けられ、前記下部半導体層を露出させるために前記基板の各角部に時計回りまたは反時計回りに隣接した周縁領域の位置からそれぞれ対角線方向に平行に湾入されて端部が互いに離隔した湾入部を有する上部半導体層と、
前記下部半導体層と前記上部半導体層との間に配置された活性層と、
前記基板の第1角部に対応する前記下部半導体層の露出領域上に形成された下部電極と、
前記上部半導体層上に形成された透明電極層と、
前記基板の第2角部に対応する前記透明電極層上に形成された上部電極と、
前記下部電極から延長され前記下部半導体層の露出周縁領域上及び前記湾入部により露出した前記下部半導体層の領域上に形成された下部延長部と、
前記透明電極層上に形成されかつ前記上部電極から延長された上部延長部と、を備えることを特徴とする発光ダイオード。 - 前記下部半導体層の周縁領域上に形成された下部延長部は、前記第2角部から所定の距離離隔した位置で終端されることを特徴とする請求項1に記載の発光ダイオード。
- 前記上部延長部は、前記上部電極から前記透明電極層の中央部まで延長された第1上部延長部と、前記中央部から前記第2角部以外の他の角部に向かってそれぞれ延長された第2、第3、第4上部延長部とを備えることを特徴とする請求項2に記載の発光ダイオード。
- 前記上部延長部は、前記第1乃至第4上部延長部からそれぞれ前記湾入部に平行に延長された副延長部をさらに備えることを特徴とする請求項3に記載の発光ダイオード。
- 前記湾入部の端部は、それらに隣接した前記第1乃至第4上部延長部から同一の距離離隔されていることを特徴とする請求項4に記載の発光ダイオード。
- 前記透明電極層は、前記基板の第2角部に対応する前記上部半導体層の角部を露出させる開口部を有し、前記上部電極は前記開口部を覆うことを特徴とする請求項1に記載の発光ダイオード。
- 前記第1角部と前記第2角部は、互いに隣接することを特徴とする請求項1に記載の発光ダイオード。
- 前記第1及び第2角部に対向する角部に形成された他の下部電極及び他の上部電極をさらに備えることを特徴とする請求項7に記載の発光ダイオード。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/KR2006/003804 WO2008038842A1 (en) | 2006-09-25 | 2006-09-25 | Light emitting diode having extensions of electrodes for current spreading |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010504640A true JP2010504640A (ja) | 2010-02-12 |
JP4922404B2 JP4922404B2 (ja) | 2012-04-25 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2009529091A Expired - Fee Related JP4922404B2 (ja) | 2006-09-25 | 2006-09-25 | 電流分散のための電極延長部を有する発光ダイオード |
Country Status (3)
Country | Link |
---|---|
US (1) | US8076688B2 (ja) |
JP (1) | JP4922404B2 (ja) |
WO (1) | WO2008038842A1 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010100900A1 (ja) * | 2009-03-02 | 2010-09-10 | 昭和電工株式会社 | Iii族窒化物半導体発光素子及びその製造方法、並びにランプ |
JP2010225771A (ja) * | 2009-03-23 | 2010-10-07 | Toyoda Gosei Co Ltd | 半導体発光素子 |
JP2012156272A (ja) * | 2011-01-26 | 2012-08-16 | Nichia Chem Ind Ltd | 発光素子 |
JP2012222219A (ja) * | 2011-04-12 | 2012-11-12 | Nichia Chem Ind Ltd | 発光素子 |
JP2013135234A (ja) * | 2011-12-26 | 2013-07-08 | Lg Innotek Co Ltd | 発光素子 |
JP2014096592A (ja) * | 2012-11-09 | 2014-05-22 | Seoul Viosys Co Ltd | 発光素子及びそれを製造する方法 |
KR20160081787A (ko) * | 2014-12-31 | 2016-07-08 | 서울바이오시스 주식회사 | 고효율 발광 다이오드 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8384115B2 (en) * | 2008-08-01 | 2013-02-26 | Cree, Inc. | Bond pad design for enhancing light extraction from LED chips |
KR101000276B1 (ko) * | 2008-12-04 | 2010-12-10 | 주식회사 에피밸리 | 반도체 발광소자 |
KR101020910B1 (ko) * | 2008-12-24 | 2011-03-09 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
JPWO2010119830A1 (ja) * | 2009-04-13 | 2012-10-22 | パナソニック株式会社 | 発光ダイオード |
KR101081166B1 (ko) * | 2009-09-23 | 2011-11-07 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법 및 발광소자 패키지 |
KR101103892B1 (ko) * | 2009-12-08 | 2012-01-12 | 엘지이노텍 주식회사 | 발광소자 및 발광소자 패키지 |
JP5713650B2 (ja) * | 2009-12-08 | 2015-05-07 | Dowaエレクトロニクス株式会社 | 発光素子およびその製造方法 |
WO2012026695A2 (en) | 2010-08-27 | 2012-03-01 | Seoul Opto Device Co., Ltd. | Light emitting diode with improved luminous efficiency |
JP2013008818A (ja) * | 2011-06-24 | 2013-01-10 | Toshiba Corp | 半導体発光素子 |
JP5606403B2 (ja) * | 2011-06-28 | 2014-10-15 | 株式会社東芝 | 半導体発光素子 |
CN103650178A (zh) * | 2011-07-29 | 2014-03-19 | 三星电子株式会社 | 半导体发光元件 |
CN102280554A (zh) * | 2011-09-05 | 2011-12-14 | 协鑫光电科技(张家港)有限公司 | Led芯片电极、led芯片及led照明光源 |
USD719112S1 (en) | 2013-11-22 | 2014-12-09 | Epistar Corporation | Light-emitting diode device |
USD752527S1 (en) * | 2014-04-30 | 2016-03-29 | Epistar Corporation | Light-emitting diode device |
USD743355S1 (en) * | 2014-07-22 | 2015-11-17 | Epistar Corporation | Light-emitting diode unit |
US9905729B2 (en) | 2015-03-27 | 2018-02-27 | Seoul Viosys Co., Ltd. | Light emitting diode |
JP6802156B2 (ja) | 2015-06-26 | 2020-12-16 | 株式会社ホタルクス | 有機elデバイス、有機el照明パネル、有機el照明装置および有機elディスプレイ |
US10615094B2 (en) * | 2017-01-28 | 2020-04-07 | Zhanming LI | High power gallium nitride devices and structures |
FR3062954A1 (fr) * | 2017-02-15 | 2018-08-17 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Diode a injection electrique amelioree |
US20190189850A1 (en) * | 2017-12-19 | 2019-06-20 | Epistar Corporation | Light-emitting device |
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JP2002353506A (ja) * | 2001-05-23 | 2002-12-06 | Sharp Corp | 半導体発光素子およびその製造方法 |
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2006
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- 2006-09-25 JP JP2009529091A patent/JP4922404B2/ja not_active Expired - Fee Related
- 2006-09-25 US US12/442,267 patent/US8076688B2/en not_active Expired - Fee Related
Patent Citations (7)
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JP2002094118A (ja) * | 2000-09-04 | 2002-03-29 | Samsung Electro Mech Co Ltd | 電流密度分散用電極構造を備えた青色発光素子 |
JP2002353506A (ja) * | 2001-05-23 | 2002-12-06 | Sharp Corp | 半導体発光素子およびその製造方法 |
JP2005328080A (ja) * | 2002-05-27 | 2005-11-24 | Nichia Chem Ind Ltd | 窒化物半導体発光素子、発光素子、素子積層体、並びにそれらを用いた発光装置 |
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Cited By (10)
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WO2010100900A1 (ja) * | 2009-03-02 | 2010-09-10 | 昭和電工株式会社 | Iii族窒化物半導体発光素子及びその製造方法、並びにランプ |
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JP2010225771A (ja) * | 2009-03-23 | 2010-10-07 | Toyoda Gosei Co Ltd | 半導体発光素子 |
JP2012156272A (ja) * | 2011-01-26 | 2012-08-16 | Nichia Chem Ind Ltd | 発光素子 |
JP2012222219A (ja) * | 2011-04-12 | 2012-11-12 | Nichia Chem Ind Ltd | 発光素子 |
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JP2014096592A (ja) * | 2012-11-09 | 2014-05-22 | Seoul Viosys Co Ltd | 発光素子及びそれを製造する方法 |
KR20160081787A (ko) * | 2014-12-31 | 2016-07-08 | 서울바이오시스 주식회사 | 고효율 발광 다이오드 |
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Also Published As
Publication number | Publication date |
---|---|
US8076688B2 (en) | 2011-12-13 |
WO2008038842A1 (en) | 2008-04-03 |
US20100044744A1 (en) | 2010-02-25 |
JP4922404B2 (ja) | 2012-04-25 |
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