JP2010285692A - 荷電粒子ビーム処理されたAu含有層 - Google Patents
荷電粒子ビーム処理されたAu含有層 Download PDFInfo
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- JP2010285692A JP2010285692A JP2010133103A JP2010133103A JP2010285692A JP 2010285692 A JP2010285692 A JP 2010285692A JP 2010133103 A JP2010133103 A JP 2010133103A JP 2010133103 A JP2010133103 A JP 2010133103A JP 2010285692 A JP2010285692 A JP 2010285692A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/08—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using ion beam radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/487—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using electron radiation
Abstract
【解決手段】 本発明は、試料表面上にAu含有層を供する方法を供する。当該方法は、Au(CO)Clを有する堆積流体を供する手順、前記試料表面の少なくとも一部の上に前記流体を堆積させる手順、及び、前記流体の少なくとも一部が上に堆積された前記試料表面に荷電粒子ビームを案内することで、前記試料表面上に前記Au含有層を生成する手順、を有する。
AU(CO)Clを荷電粒子誘起堆積用の前駆体として用いることによって、当技術分野において知られた方法と比較して、非常に高純度の金(Au)層を堆積することが可能となる。
【選択図】 図5
Description
- Au(CO)Clを有する堆積流体(蒸気すなわち気体)を供する手順510、
- 前記試料表面の少なくとも一部の上に前記流体を堆積する手順520、
- 前記流体の少なくとも一部が吸着する前記試料表面に向かって荷電粒子ビームを案内し、その後Au(CO)Clのビーム誘起分解を起こすことで、前記試料表面上に前記Au含有層を形成する手順、
を有する。
110 試料
120 スケール
130 設定
300 荷電粒子ビームシステム
310 荷電粒子ビーム源
320 制御装置
330 ユーザーインターフェース
340 ディスプレイ
350 検出器
360 ビーム
380 試料ホルダ
390 流体導入装置
Claims (12)
- 試料表面上にAu含有層を供する方法であって:
Au(CO)Clを有する堆積流体を供する手順;
前記試料表面の少なくとも一部の上に前記流体を堆積する手順;
前記流体の少なくとも一部が吸着する前記試料表面に向かって荷電粒子ビームを案内し、該案内後Au(CO)Clのビーム誘起分解を起こすことで、前記試料表面上に前記Au含有層を形成する手順;
を有する方法。 - 前記流体の堆積は減圧下で行われる、請求項1に記載の方法。
- 前記堆積は真空下で行われる、請求項2に記載の方法。
- 前記荷電粒子ビームはイオンビーム又は電子ビームである、請求項1-3のいずれかに記載の方法。
- 前記Au含有層の表面にパターンを転写するように前記荷電粒子ビームが構成される、請求項1-4のいずれかに記載の方法。
- 前記荷電粒子ビームはペンシルビームで、かつ、
前記パターンは所定のシーケンスで前記表面全体にわたって前記ペンシルビームを走査させることによって生成される、
請求項5に記載の方法。 - マスクは前記荷電粒子ビームと交差するように供され、
該交差により、荷電粒子ビーム強度は前記マスクのパターンに対応して変調される、
請求項5又は6に記載の方法。 - 前記表面に転写されるパターンが、100nm未満の大きさの部位、より好ましくは50nm未満の大きさの部位、最も好ましくは10nm未満の大きさの部位を有する、請求項5-7のいずれかに記載の方法。
- 荷電粒子ビーム誘起堆積用の前駆体としてのAu(CO)Clの使用。
- 試料表面上にAu含有層を供するシステムであって、
当該システムは:
試料表面を照射地点に設置するように備えられている試料ホルダ;
前記照射地点に荷電粒子ビームを供するように備えられている荷電粒子源;及び、
前記照射地点にAu(CO)Clを有する堆積流体を供するように備えられている流体導入装置;
を有し、
前記荷電粒子ビーム及び流体導入装置は、前記堆積流体を分解することで、前記試料表面上にAu含有層を形成するように備えられている、
システム。 - 前記流体導入装置が前記堆積流体を保持するように備えられている容器を有する、請求項10に記載のシステム。
- 粒子光学装置内で前記堆積流体を供給する容器であって、Au(CO)Clを有する容器。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP09162532.7 | 2009-06-12 | ||
EP20090162532 EP2261395A1 (en) | 2009-06-12 | 2009-06-12 | Au-containing layer obtainable by charged particle beam processing |
Publications (2)
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JP2010285692A true JP2010285692A (ja) | 2010-12-24 |
JP5697902B2 JP5697902B2 (ja) | 2015-04-08 |
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JP2010133103A Expired - Fee Related JP5697902B2 (ja) | 2009-06-12 | 2010-06-10 | 荷電粒子ビーム処理されたAu含有層 |
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US (1) | US9617641B2 (ja) |
EP (2) | EP2261395A1 (ja) |
JP (1) | JP5697902B2 (ja) |
CN (1) | CN101922000B (ja) |
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US8884248B2 (en) | 2012-02-13 | 2014-11-11 | Fei Company | Forming a vitrified sample for electron microscopy |
US10023955B2 (en) * | 2012-08-31 | 2018-07-17 | Fei Company | Seed layer laser-induced deposition |
EP3249676B1 (en) | 2016-05-27 | 2018-10-03 | FEI Company | Dual-beam charged-particle microscope with in situ deposition functionality |
WO2022178904A1 (zh) * | 2021-02-28 | 2022-09-01 | 浙江大学 | 一种微装置的制造方法及装置 |
Citations (6)
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JPH05259095A (ja) * | 1992-03-12 | 1993-10-08 | Mitsubishi Materials Corp | Cvd法による金膜の形成方法 |
JPH08170163A (ja) * | 1994-10-18 | 1996-07-02 | Ebara Corp | 成膜方法 |
JP2000054116A (ja) * | 1998-05-22 | 2000-02-22 | Seiko Instruments Inc | 金属パタ―ン膜の形成方法及びその装置 |
JP2005200507A (ja) * | 2004-01-14 | 2005-07-28 | Sekisui Chem Co Ltd | 金属樹脂複合微粒子の製造方法及び金属樹脂複合微粒子 |
JP2006009055A (ja) * | 2004-06-22 | 2006-01-12 | National Institute For Materials Science | ガスデポジション法のための原料ガス供給方法及び供給装置 |
JP2008177154A (ja) * | 2006-10-31 | 2008-07-31 | Fei Co | クラスタ源を使用する荷電粒子ビーム処理 |
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US5149974A (en) | 1990-10-29 | 1992-09-22 | International Business Machines Corporation | Gas delivery for ion beam deposition and etching |
US6268608B1 (en) * | 1998-10-09 | 2001-07-31 | Fei Company | Method and apparatus for selective in-situ etching of inter dielectric layers |
JP2002527908A (ja) | 1998-10-09 | 2002-08-27 | フェイ カンパニ | ガス‐アシストfibエッチングを利用した集積回路再配線 |
US6751516B1 (en) * | 2000-08-10 | 2004-06-15 | Richardson Technologies, Inc. | Method and system for direct writing, editing and transmitting a three dimensional part and imaging systems therefor |
US6838380B2 (en) * | 2001-01-26 | 2005-01-04 | Fei Company | Fabrication of high resistivity structures using focused ion beams |
WO2003012551A1 (en) | 2001-07-27 | 2003-02-13 | Fei Company | Electron beam processing |
EP1890136A1 (en) * | 2006-08-16 | 2008-02-20 | FEI Company | Method for obtaining images from slices of a specimen |
DE102007054074A1 (de) * | 2007-11-13 | 2009-05-14 | Carl Zeiss Nts Gmbh | System zum Bearbeiten eines Objekts |
US8278220B2 (en) * | 2008-08-08 | 2012-10-02 | Fei Company | Method to direct pattern metals on a substrate |
EP2226830B1 (en) * | 2009-03-06 | 2014-01-08 | FEI Company | Charged particle beam processing |
-
2009
- 2009-06-12 EP EP20090162532 patent/EP2261395A1/en not_active Withdrawn
-
2010
- 2010-06-10 JP JP2010133103A patent/JP5697902B2/ja not_active Expired - Fee Related
- 2010-06-11 EP EP20100165599 patent/EP2270254B1/en not_active Not-in-force
- 2010-06-11 US US12/814,283 patent/US9617641B2/en not_active Expired - Fee Related
- 2010-06-11 CN CN201010208622.5A patent/CN101922000B/zh not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05259095A (ja) * | 1992-03-12 | 1993-10-08 | Mitsubishi Materials Corp | Cvd法による金膜の形成方法 |
JPH08170163A (ja) * | 1994-10-18 | 1996-07-02 | Ebara Corp | 成膜方法 |
JP2000054116A (ja) * | 1998-05-22 | 2000-02-22 | Seiko Instruments Inc | 金属パタ―ン膜の形成方法及びその装置 |
JP2005200507A (ja) * | 2004-01-14 | 2005-07-28 | Sekisui Chem Co Ltd | 金属樹脂複合微粒子の製造方法及び金属樹脂複合微粒子 |
JP2006009055A (ja) * | 2004-06-22 | 2006-01-12 | National Institute For Materials Science | ガスデポジション法のための原料ガス供給方法及び供給装置 |
JP2008177154A (ja) * | 2006-10-31 | 2008-07-31 | Fei Co | クラスタ源を使用する荷電粒子ビーム処理 |
Also Published As
Publication number | Publication date |
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US20100316811A1 (en) | 2010-12-16 |
EP2270254A1 (en) | 2011-01-05 |
JP5697902B2 (ja) | 2015-04-08 |
EP2270254B1 (en) | 2014-08-13 |
US9617641B2 (en) | 2017-04-11 |
CN101922000A (zh) | 2010-12-22 |
CN101922000B (zh) | 2015-09-09 |
EP2261395A1 (en) | 2010-12-15 |
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