JP2010261081A - Vapor deposition method and vapor deposition apparatus - Google Patents

Vapor deposition method and vapor deposition apparatus Download PDF

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JP2010261081A
JP2010261081A JP2009113519A JP2009113519A JP2010261081A JP 2010261081 A JP2010261081 A JP 2010261081A JP 2009113519 A JP2009113519 A JP 2009113519A JP 2009113519 A JP2009113519 A JP 2009113519A JP 2010261081 A JP2010261081 A JP 2010261081A
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vapor deposition
substrate
vapor
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JP5323581B2 (en
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Koichi Kajiyama
康一 梶山
Michinobu Mizumura
通伸 水村
Kazue Hashimoto
和重 橋本
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V Technology Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To enable a dense pattern to be formed by enhancing the accuracy of a vapor-depositing position in a vapor deposition process of vapor-depositing a material on a substrate which is being transported. <P>SOLUTION: This vapor deposition method includes: taking an image of an alignment mark which is formed in a vapor deposition mask 16B and a pixel which is previously formed on the surface of the substrate 9 for an organic EL display, with an imaging means 4 that is arranged so as to take an image of a position which is located in a front side of positions to be vapor-deposited through vapor deposition masks 16R, 16G and 16B, in a transportation direction of the substrate; detecting an amount of the deviation of a reference position of the alignment mark from a reference position of the pixel, based on the imaged picture; and forming a predetermined pattern on the pixel of the substrate 9 for the organic EL display by vapor deposition, which is being transported, while aligning the vapor deposition masks 16R, 16G and 16B by moving the vapor deposition masks in an approximately orthogonal direction to the transporting direction in a plane parallel to the substrate plane with an alignment means 5 so that the amount of the deviation becomes a predetermined value. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、基板を搬送しながら、該基板に対向して配置された蒸着マスクの開口部を通して基板表面に蒸着材料を蒸着して所定のパターンを形成する蒸着方法に関し、詳しくは、蒸着位置精度を向上して緻密なパターンの形成を可能にしようとする蒸着方法及び蒸着装置に係るものである。   The present invention relates to a deposition method for forming a predetermined pattern by depositing a deposition material on a substrate surface through an opening of a deposition mask arranged to face the substrate while transporting the substrate. The present invention relates to a vapor deposition method and a vapor deposition apparatus that improve the above and enable the formation of a dense pattern.

従来のこの種の蒸着方法は、基板の面積より面積が小さい蒸着マスクを使用し、基板を蒸着マスクに対して一方向に相対的に移動させながら、蒸着源から蒸発された蒸着材料を蒸着マスクの開口部を通して基板上に蒸着し、基板の全面に所望の蒸着パターンを形成するものとなっていた（例えば、特許文献１参照）。   This type of conventional vapor deposition method uses a vapor deposition mask whose area is smaller than the area of the substrate, and moves the substrate relative to the vapor deposition mask in one direction while removing the vapor deposition material evaporated from the vapor deposition source. It vapor-deposits on a board | substrate through this opening part, and forms a desired vapor deposition pattern in the whole surface of a board | substrate (for example, refer patent document 1).

特開２００３−２９７５６２号公報JP 2003-297562 A

しかし、このような従来の蒸着方法においては、相対的に移動中の基板に対して蒸着マスクを位置合わせしながら蒸着するものではなかったので、移動機構の機械精度に基づいて相対移動中の基板に発生する移動方向に略直交する方向の位置ずれを補正することができず、蒸着位置精度を向上することができなかった。したがって、基板を相対移動しながら、緻密なパターンを蒸着して形成することができず、例えば高精細な有機ＥＬ表示装置を製造することができなかった。   However, in such a conventional vapor deposition method, the vapor deposition mask is not positioned while being aligned with respect to the relatively moving substrate. Therefore, the relative moving substrate is based on the mechanical accuracy of the moving mechanism. The positional deviation in the direction substantially perpendicular to the moving direction generated in the film could not be corrected, and the deposition position accuracy could not be improved. Therefore, a dense pattern cannot be formed by vapor deposition while relatively moving the substrate, and for example, a high-definition organic EL display device cannot be manufactured.

そこで、本発明は、このような問題点に対処し、蒸着位置精度を向上して緻密なパターンの形成を可能にしようとする蒸着方法及び蒸着装置を提供することを目的とする。   SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a vapor deposition method and a vapor deposition apparatus that address such problems and improve the vapor deposition position accuracy to enable the formation of a dense pattern.

上記目的を達成するために、本発明による蒸着方法は、基板を搬送しながら、該基板に対向して配置された蒸着マスクの開口部を通して前記基板表面に蒸着材料を蒸着して所定のパターンを形成する蒸着方法であって、前記蒸着マスクによる蒸着位置の前記基板の搬送方向手前側の位置を撮像可能に設けられた撮像手段により、前記蒸着マスクに形成されたアライメントマークと前記基板表面に予め形成された基準パターンとを撮像し、前記撮像画像に基づいて前記アライメントマークの基準位置と前記基準パターンの基準位置との間の位置ずれ量を検出し、該位置ずれ量が所定値となるように前記蒸着マスクを前記基板面に平行な面内にて前記搬送方向と略直交する方向に移動して位置合わせしながら、前記基準パターン上に前記所定のパターンを蒸着形成するものである。   In order to achieve the above object, a deposition method according to the present invention provides a predetermined pattern by depositing a deposition material on the surface of a substrate through an opening of a deposition mask disposed to face the substrate while transporting the substrate. A vapor deposition method for forming an alignment mark formed on the vapor deposition mask and a surface of the substrate in advance by an imaging unit capable of imaging the position of the vapor deposition position on the near side in the transport direction of the substrate. The formed reference pattern is imaged, and a positional deviation amount between the reference position of the alignment mark and the reference position of the reference pattern is detected based on the captured image so that the positional deviation amount becomes a predetermined value. The vapor deposition mask is moved and aligned in a direction substantially perpendicular to the transport direction within a plane parallel to the substrate surface, and the predetermined pattern is formed on the reference pattern. It is intended to deposit forming over emissions.

また、前記基板は、有機ＥＬ表示用基板である。これにより、搬送中の有機ＥＬ表示用基板に対して蒸着マスクを位置合わせしながら、蒸着を実行する。   The substrate is an organic EL display substrate. Thereby, vapor deposition is performed, aligning a vapor deposition mask with respect to the organic EL display substrate in conveyance.

また、本発明による蒸着装置は、基板を搬送しながら、該基板に対向して配置された蒸着マスクの開口部を通して前記基板表面に蒸着材料を蒸着して所定のパターンを形成する蒸着装置であって、真空チャンバ内部に、前記基板を搬送する搬送手段と、前記搬送手段の下方に設けられ、上端部を開口し前記基板の搬送方向に略直交する方向に長軸を有する箱体の内部に蒸着材料を加熱して溶融させるルツボを有し、さらに前記箱体の上端部に前記箱体の長軸方向に複数の開口部を所定間隔で並設した前記蒸着マスクを配設した蒸着源ユニットと、前記蒸着マスクによる蒸着位置の前記基板の搬送方向手前側の位置を撮像可能に設けられ、前記蒸着マスクに形成されたアライメントマークと前記基板表面に予め形成された基準パターンとを撮像する撮像手段と、前記撮像手段による撮像画像に基づいて検出された前記アライメントマークの基準位置と前記基準パターンの基準位置との間の位置ずれ量が所定値となるように前記蒸着マスクを前記基板面に平行な面内にて前記搬送方向と略直交する方向に移動して位置合わせするアライメント手段と、を備えたものである。   The vapor deposition apparatus according to the present invention is a vapor deposition apparatus that forms a predetermined pattern by vapor-depositing a vapor deposition material on the surface of the substrate through an opening of a vapor deposition mask disposed to face the substrate while conveying the substrate. A transfer means for transferring the substrate in the vacuum chamber; and a box provided below the transfer means, having an upper end and a long axis in a direction substantially perpendicular to the transfer direction of the substrate. A vapor deposition source unit having a crucible for heating and melting a vapor deposition material, and further comprising the vapor deposition mask in which a plurality of openings are arranged in parallel at predetermined intervals in the major axis direction of the box at the upper end of the box And an image of an alignment mark formed on the vapor deposition mask and a reference pattern formed in advance on the substrate surface so as to be capable of imaging the position of the vapor deposition position on the near side in the transport direction of the substrate. And the deposition mask so that a positional deviation amount between a reference position of the alignment mark and a reference position of the reference pattern detected based on a captured image by the imaging means becomes a predetermined value. Alignment means for moving and aligning in a direction substantially perpendicular to the transport direction in a plane parallel to the plane.

このような構成により、真空チャンバ内部で、搬送手段により蒸着マスクに対向して基板を搬送しながら、搬送手段の下方に設けられた蒸着源ユニットの箱体の内部に有するルツボで蒸着材料を溶融させ、箱体の上端部に配設され箱体の長軸方向に複数の開口部を所定間隔で並設した蒸着マスクの上記開口部を通して基板表面に蒸着材料を蒸着して所定のパターンを形成する。その際、蒸着マスクによる蒸着位置の基板の搬送方向手前側の位置を撮像可能に設けられた撮像手段により蒸着マスクに形成されたアライメントマークと基板表面に予め形成された基準パターンとを撮像し、撮像手段による撮像画像に基づいて検出されたアライメントマークの基準位置と基準パターンの基準位置との間の位置ずれ量が所定値となるようにアライメント手段で蒸着マスクを基板面に平行な面内にて搬送方向と略直交する方向に移動して位置合わせする。   With such a configuration, the vapor deposition material is melted with the crucible provided inside the box of the vapor deposition source unit provided below the conveyance means while the substrate is conveyed by the conveyance means facing the vapor deposition mask inside the vacuum chamber. A predetermined pattern is formed by depositing a deposition material on the surface of the substrate through the openings of the deposition mask disposed at the upper end of the box and having a plurality of openings arranged in parallel in the major axis direction of the box at predetermined intervals. To do. At that time, the image of the alignment mark formed on the vapor deposition mask and the reference pattern formed in advance on the substrate surface is imaged by the imaging means provided so as to be able to image the position of the vapor deposition position on the front side in the transport direction of the substrate, The vapor deposition mask is placed in a plane parallel to the substrate surface by the alignment means so that the amount of positional deviation between the reference position of the alignment mark and the reference position of the reference pattern detected based on the image taken by the imaging means becomes a predetermined value. Then, the position is adjusted by moving in a direction substantially perpendicular to the conveying direction.

さらに、前記蒸着源ユニットは、長軸方向の長さの短い複数の単位蒸着源ユニットを前記基板の搬送方向に略直交方向に一直線状に並べて所定長さに形成されたものである。これにより、長軸方向の長さの短い複数の単位蒸着源ユニットを基板の搬送方向に略直交方向に一直線状に並べて所定長さに形成された蒸着源ユニットで基板表面に蒸着材料を蒸着する。   Further, the vapor deposition source unit is formed to have a predetermined length by arranging a plurality of unit vapor deposition source units having a short length in the major axis direction in a straight line in a direction substantially orthogonal to the substrate transport direction. Thereby, a plurality of unit vapor deposition source units having a short length in the major axis direction are arranged in a straight line in a direction substantially orthogonal to the substrate transport direction and vapor deposition material is vapor-deposited on the substrate surface by a vapor deposition source unit formed to a predetermined length. .

そして、前記蒸着源ユニットは、長軸方向の長さの短い複数の単位蒸着源ユニットを前記基板の搬送方向に略直交方向に互い違いに並べて所定長さに形成されたものである。これにより、長軸方向の長さの短い複数の単位蒸着源ユニットを基板の搬送方向に略直交方向に互い違いに並べて所定長さに形成された蒸着源ユニットで基板表面に蒸着材料を蒸着する。   The vapor deposition source unit is formed to have a predetermined length by alternately arranging a plurality of unit vapor deposition source units having a short length in the major axis direction in a direction substantially orthogonal to the substrate transport direction. Thereby, the vapor deposition material is vapor-deposited on the surface of the substrate by the vapor deposition source units formed in a predetermined length by alternately arranging a plurality of unit vapor deposition source units having a short length in the major axis direction in a direction substantially orthogonal to the substrate transport direction.

また、前記蒸着源ユニットは、前記基板の搬送方向に所定間隔で複数並設され、複数種の蒸着材料を同時に蒸着可能に形成されたものである。これにより、基板の搬送方向に所定間隔で並設された複数の蒸着源ユニットで複数種の蒸着材料を同時に蒸着する。   A plurality of the vapor deposition source units are arranged in parallel at a predetermined interval in the transport direction of the substrate, and are formed so that a plurality of types of vapor deposition materials can be vapor deposited simultaneously. As a result, a plurality of types of vapor deposition materials are vapor-deposited simultaneously with a plurality of vapor deposition source units arranged in parallel at a predetermined interval in the substrate transport direction.

さらに、前記蒸着マスクは、前記蒸着源ユニットの前記箱体の側面から前記基板の搬送方向手前側に突出させて片部を有し、該片部に前記アライメントマークを形成したものである。これにより、蒸着源ユニットの箱体の側面から基板の搬送方向手前側に突出した蒸着マスクの片部に形成されたアライメントマークにより、蒸着マスクの開口部と基板の基準パターンとの位置合わせをする。   Furthermore, the vapor deposition mask has a piece protruding from the side surface of the box of the vapor deposition source unit toward the front side in the transport direction of the substrate, and the alignment mark is formed on the piece. Thereby, the opening of the vapor deposition mask and the reference pattern of the substrate are aligned by the alignment mark formed on one side of the vapor deposition mask that protrudes from the side surface of the box of the vapor deposition source unit toward the front side of the substrate transport direction. .

さらにまた、前記撮像手段は、走査型電子顕微鏡である。これにより、走査型電子顕微鏡で蒸着マスクのアライメントマークと基板の基準パターンを撮像する。   Furthermore, the imaging means is a scanning electron microscope. Thereby, the alignment mark of a vapor deposition mask and the reference | standard pattern of a board | substrate are imaged with a scanning electron microscope.

そして、前記基板は、有機ＥＬ表示用基板である。これにより、搬送中の有機ＥＬ表示用基板に対して蒸着マスクを位置合わせしながら、蒸着を実行する。   The substrate is an organic EL display substrate. Thereby, vapor deposition is performed, aligning a vapor deposition mask with respect to the organic EL display substrate in conveyance.

請求項１又は３に係る発明によれば、搬送中の基板に対して蒸着マスクの位置合わせをしながら蒸着することができる。したがって、蒸着位置精度を向上して緻密なパターンを形成することができる。   According to the invention which concerns on Claim 1 or 3, it can vapor-deposit, aligning a vapor deposition mask with respect to the board | substrate in conveyance. Therefore, it is possible to improve the deposition position accuracy and form a dense pattern.

また、請求項２又は９に係る発明によれば、搬送中の有機ＥＬ表示用基板に対して蒸着マスクを位置合わせしながら蒸着をすることができる。したがって、大型の有機ＥＬ表示用基板に対する発光層の蒸着形成を能率よく且つ高精度に行なうことができ、高精細な有機ＥＬ表示装置の製造を容易にすることができる。   Moreover, according to the invention concerning Claim 2 or 9, it can vapor-deposit, aligning a vapor deposition mask with respect to the organic EL display substrate in conveyance. Therefore, it is possible to efficiently and highly accurately form a light emitting layer on a large organic EL display substrate, and to easily manufacture a high-definition organic EL display device.

さらに、請求項４又は５に係る発明によれば、蒸着マスクの長軸方向の長さを短くして熱膨張による開口部の位置ずれを抑制することができる。したがって、蒸着位置精度をより向上することができる。   Furthermore, according to the invention which concerns on Claim 4 or 5, the length of the major axis direction of a vapor deposition mask can be shortened, and the position shift of the opening part by thermal expansion can be suppressed. Therefore, the deposition position accuracy can be further improved.

また、請求項６に係る発明によれば、複数種の蒸着材料を同時に蒸着することができる。したがって、蒸着工程のタクトを短縮することができる。   Moreover, according to the invention which concerns on Claim 6, multiple types of vapor deposition material can be vapor-deposited simultaneously. Therefore, the tact time of the vapor deposition process can be shortened.

さらに、請求項７に係る発明によれば、撮像手段によるアライメントマークの撮像が容易になると共に、蒸着マスクのアライメントマークと開口部とを同時に加工することができ、両者を所定の位置関係に高精度に形成することができる。したがって、蒸着位置精度をより一層向上することができる。   Furthermore, according to the seventh aspect of the invention, the imaging of the alignment mark by the imaging means is facilitated, and the alignment mark and the opening of the vapor deposition mask can be processed at the same time. It can be formed with high accuracy. Therefore, the deposition position accuracy can be further improved.

そして、請求項８に係る発明によれば、焦点深度が深くなり、高さ位置の異なる蒸着マスクのアライメントマークと基板の基準パターンとを同時にフォーカスさせて撮像することができる。したがって、蒸着マスクと基板との位置合わせをより高精度に行なうことができる。   According to the eighth aspect of the present invention, the depth of focus becomes deep, and the alignment marks of the vapor deposition masks having different height positions and the reference pattern of the substrate can be simultaneously focused and imaged. Therefore, the alignment between the vapor deposition mask and the substrate can be performed with higher accuracy.

本発明による蒸着装置の実施形態の概略構成を示す正面図である。It is a front view which shows schematic structure of embodiment of the vapor deposition apparatus by this invention. 上記実施形態に使用する有機ＥＬ表示用基板の平面図である。It is a top view of the organic electroluminescent display substrate used for the said embodiment. 上記有機ＥＬ表示用基板を保持する保持部材を示す図であり、（ａ）は平面図、（ｂ）は要部拡大断面図である。It is a figure which shows the holding member holding the said organic electroluminescent display board | substrate, (a) is a top view, (b) is a principal part expanded sectional view. 上記実施形態に使用する蒸着源ユニットを示す図であり、（ａ）は平面図、（ｂ）は（ａ）のＯ−Ｏ線断面図である。It is a figure which shows the vapor deposition source unit used for the said embodiment, (a) is a top view, (b) is the OO sectional view taken on the line of (a). 有機ＥＬ表示用基板に形成された発光層のパターンを示す説明図である。It is explanatory drawing which shows the pattern of the light emitting layer formed in the organic electroluminescent display board | substrate.

以下、本発明の実施形態を添付図面に基づいて詳細に説明する。図１は本発明による蒸着装置の実施形態の概略構成を示す正面図である。この蒸着装置は、基板を搬送しながら、該基板に対向して配置された蒸着マスクの開口部を通して基板表面に蒸着材料を蒸着して所定のパターンを形成するもので、真空チャンバ１内に、搬送手段２と、蒸着源ユニット３Ｒ，３Ｇ，３Ｂと、撮像手段４と、アライメント手段５とを備えている。   Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a front view showing a schematic configuration of an embodiment of a vapor deposition apparatus according to the present invention. This vapor deposition apparatus forms a predetermined pattern by vapor-depositing a vapor deposition material on the surface of a substrate through an opening of a vapor deposition mask disposed facing the substrate while conveying the substrate. A transport unit 2, vapor deposition source units 3R, 3G, and 3B, an imaging unit 4, and an alignment unit 5 are provided.

ここで使用する基板は、図２に示すように、複数のゲート信号線６とドレイン信号線７との交差部に有機ＥＬ駆動用ＴＦＴ２４を形成し、ゲート信号線６とドレイン信号線７に囲まれた領域を表示画素（ピクセル８）としてマトリクス状に有する有機ＥＬ表示用基板９であり、陽極電極上に発光層が未形成の基板である。   As shown in FIG. 2, the substrate used here has an organic EL driving TFT 24 formed at the intersection of a plurality of gate signal lines 6 and drain signal lines 7, and is surrounded by the gate signal lines 6 and drain signal lines 7. This is an organic EL display substrate 9 having the above-described region as a display pixel (pixel 8) in a matrix, and is a substrate in which a light emitting layer is not formed on the anode electrode.

上記搬送手段２は、基板保持部１０に有機ＥＬ表示用基板９の複数のピクセル８（基準パターン）が形成された面を下側にして保持し、矢印Ａ方向に一定速度で搬送するものであり、基板保持部１０には、図３（ａ）に示すように有機ＥＬ表示用基板９を静電的に吸着して保持する複数の静電チャック１１が分割して設けられている。また、この静電チャック１１には、同図（ｂ）に示すように、吸着面１１ａとは反対側の端面に例えば圧電素子１２が設けられており、圧電素子１２の高さを変位させて静電チャック１１の突出量が同図に矢印で示すように制御できるようになっている。   The transfer means 2 holds the substrate holding portion 10 with the surface on which the plurality of pixels 8 (reference pattern) of the organic EL display substrate 9 are formed facing down, and transfers the substrate at a constant speed in the direction of arrow A. The substrate holding unit 10 is provided with a plurality of divided electrostatic chucks 11 for electrostatically adsorbing and holding the organic EL display substrate 9 as shown in FIG. Further, as shown in FIG. 4B, the electrostatic chuck 11 is provided with, for example, a piezoelectric element 12 on the end surface opposite to the attracting surface 11a, and the height of the piezoelectric element 12 is displaced. The protruding amount of the electrostatic chuck 11 can be controlled as indicated by an arrow in the figure.

上記搬送手段２の下方には、三台の蒸着源ユニット３Ｒ，３Ｇ，３Ｂが基板の搬送方向に所定間隔で並設されている。これらの蒸着源ユニット３Ｒ，３Ｇ，３Ｂは、図４（ｂ）に示すように、上端部を開口し、基板の搬送方向（矢印Ａ方向）に略直交する方向に長軸を有する箱体１３の内部に蒸着材料を加熱して溶融させるルツボ１４を備え、同図（ａ）に示すように上記上端開口に対応して箱体１３の長軸方向に複数の開口部１５を所定間隔で並設した蒸着マスク１６Ｒ，１６Ｇ，１６Ｂを撓みが生じないように長軸方向に引っ張った状態で箱体１３に固定して配設したものであり、各蒸着源ユニット３のルツボ１４内にそれぞれ赤（Ｒ）、緑（Ｇ）、青（Ｂ）の対応色の発光材料１７Ｒ，１７Ｇ，１７Ｂ（蒸着材料）を収容し、蒸着マスク１６Ｒ，１６Ｇ，１６Ｂに対して所定間隔（例えば、約５０μｍ〜約１００μｍの間隔）で対向して搬送される有機ＥＬ表示用基板９にＲＧＢの発光材料１７Ｒ，１７Ｇ，１７Ｂを同時に蒸着することができるようになっている。この場合、蒸着マスク１６Ｒ，１６Ｇ，１６Ｂ面と有機ＥＬ表示用基板９面との間隔は、公知の静電容量検出技術を適用して両面間の静電容量が所定値となるように制御するとよい。また、各蒸着源ユニット３Ｒ，３Ｇ，３Ｂの箱体１３内に夫々複数のルツボ１４を箱体１３の長軸方向に所定間隔で並設すると共に、各ルツボ１４に対応して蒸着マスク１６Ｒ，１６Ｇ，１６Ｂ側に複数の水晶振動子を配置し、これらの水晶振動子により各ルツボ１４の相対的な蒸着速度を検出しながら、蒸着源ユニット３Ｒ，３Ｇ，３Ｂの長軸方向の膜厚分布が均一になるように各ルツボ１４の過熱温度を個別に制御するとよい。   Below the transfer means 2, three vapor deposition source units 3R, 3G, 3B are arranged in parallel at predetermined intervals in the substrate transfer direction. As shown in FIG. 4B, these vapor deposition source units 3R, 3G, and 3B have an upper end portion and a box 13 having a long axis in a direction substantially orthogonal to the substrate transport direction (arrow A direction). A crucible 14 for heating and melting the vapor deposition material is provided inside, and a plurality of openings 15 are arranged at predetermined intervals in the major axis direction of the box 13 corresponding to the upper end opening as shown in FIG. The deposited vapor deposition masks 16R, 16G, and 16B are fixed to the box 13 while being pulled in the major axis direction so as not to bend, and each of the vapor deposition source units 3 has a red color inside the crucible 14. (R), green (G), and blue (B) corresponding color light emitting materials 17R, 17G, and 17B (deposition material) are accommodated, and a predetermined distance (for example, about 50 μm to about 16 μm to 16V, 16B, 16B). Organic E conveyed oppositely at an interval of about 100 μm) RGB light emitting materials 17R, 17G, and 17B can be simultaneously deposited on the L display substrate 9. In this case, the distance between the vapor deposition masks 16R, 16G, and 16B and the surface of the organic EL display substrate 9 is controlled by applying a known capacitance detection technique so that the capacitance between both surfaces becomes a predetermined value. Good. In addition, a plurality of crucibles 14 are juxtaposed at predetermined intervals in the major axis direction of the box 13 in the box 13 of each vapor deposition source unit 3R, 3G, 3B, and vapor deposition masks 16R, A plurality of crystal resonators are arranged on the 16G and 16B sides, and the film thickness distribution in the major axis direction of the evaporation source units 3R, 3G, and 3B is detected while detecting the relative evaporation rate of each crucible 14 with these crystal resonators. It is advisable to individually control the overheating temperature of each crucible 14 so as to be uniform.

上記蒸着マスク１６Ｒ，１６Ｇ，１６Ｂの具体的構成例は、図４（ａ）に示すように、長軸の長さが有機ＥＬ表示用基板９の搬送方向と略直交する方向の幅に略等しく、有機ＥＬ表示用基板９よりも形状の小さい短冊状の金属板からなり、その長軸方向に一直線状に並べて矩形状の複数の開口部１５が形成されている。より具体的には、隣接する開口部１５の間隔は、図２に示す矢印Ａで示す搬送方向に略直交する方向のピクセル８の配列ピッチＰの３倍のピッチに等しい間隔となるようにされ、また、開口部１５の並び方向の幅ｗは、図２に示す矢印Ａ方向と直交する方向のピクセル８の幅と略同じ幅に形成されている。さらに、矢印Ａ方向に並設された三つの蒸着マスク１６Ｒ，１６Ｇ，１６Ｂは、隣接する蒸着マスクの開口部１５が矢印Ａ方向と直交方向に、同方向のピクセル８の配列ピッチＰの１ピッチ分だけずれて配置されている。さらにまた、矢印Ａで示す基板搬送方向の最も手前側に位置する蒸着マスク１６Ｂには、図４（ｂ）に示すように蒸着源ユニット３Ｂの箱体１３の側面から基板の搬送方向手前側に突出して片部１８が形成され、該片部１８に上記開口部１５と所定の位置関係をなして有機ＥＬ表示用基板９との位置合わせ用のアライメントマーク１９が形成されている。そして、蒸着マスク１６Ｒ，１６Ｇ，１６Ｂの上面が同一平面を成すように蒸着源ユニット３Ｒ，３Ｇ，３Ｂの高さが調整されている。   As shown in FIG. 4A, a specific configuration example of the vapor deposition masks 16R, 16G, and 16B is substantially equal to the width in the direction substantially orthogonal to the transport direction of the organic EL display substrate 9. Further, it is formed of a strip-shaped metal plate having a shape smaller than that of the organic EL display substrate 9, and a plurality of rectangular openings 15 are formed in a straight line along the long axis direction. More specifically, the interval between the adjacent openings 15 is set to be equal to a pitch that is three times the arrangement pitch P of the pixels 8 in a direction substantially orthogonal to the conveyance direction indicated by the arrow A shown in FIG. Further, the width w in the arrangement direction of the openings 15 is formed to be substantially the same as the width of the pixel 8 in the direction orthogonal to the arrow A direction shown in FIG. Further, the three vapor deposition masks 16R, 16G, and 16B arranged in parallel in the direction of arrow A have one pitch of the arrangement pitch P of the pixels 8 in the same direction in which the openings 15 of the adjacent vapor deposition masks are orthogonal to the direction of arrow A. It is shifted by the amount. Furthermore, as shown in FIG. 4B, the vapor deposition mask 16B located on the most front side in the substrate conveyance direction indicated by the arrow A is located on the front side in the substrate conveyance direction from the side surface of the box 13 of the vapor deposition source unit 3B. A piece 18 is formed so as to protrude, and an alignment mark 19 for alignment with the organic EL display substrate 9 is formed on the piece 18 in a predetermined positional relationship with the opening 15. The heights of the vapor deposition source units 3R, 3G, and 3B are adjusted so that the upper surfaces of the vapor deposition masks 16R, 16G, and 16B are on the same plane.

また、上記蒸着源ユニット３Ｒ，３Ｇ，３Ｂの箱体１３と蒸着マスク１６Ｒ，１６Ｇ，１６Ｂとの間には、蒸着マスク１６の縁部に沿ってヒートパイプ２０が設けられており、蒸着マスク１６Ｒ，１６Ｇ，１６Ｂを冷却して蒸着マスク１６Ｒ，１６Ｇ，１６Ｂの熱膨張による開口部１５の位置ずれを抑制できるようにしている。さらに、蒸着源ユニット３Ｒ，３Ｇ，３Ｂには、上記ルツボ１４と蒸着マスク１６Ｒ，１６Ｇ，１６Ｂとの間にシャッタ２１が開閉可能に設けられており、蒸着時には、シャッタ２１を開いて発光材料１７Ｒ，１７Ｇ，１７Ｂの蒸着を可能にし、蒸着時以外は、シャッタ２１を閉じて発光材料１７Ｒ，１７Ｇ，１７Ｂの蒸着を阻止するようになっている。なお、図４（ｂ）において、蒸着源ユニット３Ｒは、シャッタ２１が閉じた状態を示し、蒸着源ユニット３Ｇ，３Ｂはシャッタ２１が開いた状態を示している。   A heat pipe 20 is provided along the edge of the vapor deposition mask 16 between the box 13 of the vapor deposition source units 3R, 3G, 3B and the vapor deposition masks 16R, 16G, 16B. , 16G, and 16B are cooled so that the displacement of the opening 15 due to thermal expansion of the vapor deposition masks 16R, 16G, and 16B can be suppressed. Further, the vapor deposition source units 3R, 3G, 3B are provided with a shutter 21 that can be opened and closed between the crucible 14 and the vapor deposition masks 16R, 16G, 16B. During vapor deposition, the shutter 21 is opened and the light emitting material 17R is opened. , 17G, and 17B can be deposited, and the shutter 21 is closed except during the deposition to prevent the light emitting materials 17R, 17G, and 17B from being deposited. In FIG. 4B, the deposition source unit 3R shows a state where the shutter 21 is closed, and the deposition source units 3G and 3B show a state where the shutter 21 is opened.

さらに、上記蒸着源ユニット３Ｂの箱体１３の矢印Ａで示す搬送方向手前側の側面には、その長軸方向に所定間隔で並べて複数のレーザ変位計２２が設けられている。これらのレーザ変位計２２は、搬送される有機ＥＬ表示用基板９表面の平坦度を計測するためのものであり、各計測結果を対応する上記複数の静電チャック１１にフィードバックし、蒸着マスク１６Ｂに対向した領域の複数の静電チャック１１の圧電素子１２を個別に駆動して各静電チャック１１の突出量を制御し、蒸着マスク１６Ｒ，１６Ｇ，１６Ｂに対向した領域の有機ＥＬ表示用基板９表面の平坦度を略均一にすることができるようになっている。   Further, a plurality of laser displacement gauges 22 are arranged on the side surface of the box 13 of the vapor deposition source unit 3B on the front side in the transport direction indicated by the arrow A at a predetermined interval in the major axis direction. These laser displacement meters 22 are for measuring the flatness of the surface of the organic EL display substrate 9 being conveyed. Each measurement result is fed back to the corresponding plurality of electrostatic chucks 11, and the vapor deposition mask 16B. The piezoelectric elements 12 of the plurality of electrostatic chucks 11 in the region facing the substrate are individually driven to control the amount of protrusion of each electrostatic chuck 11, and the organic EL display substrate in the region facing the vapor deposition masks 16R, 16G, 16B. 9 The flatness of the surface can be made substantially uniform.

上記蒸着マスク１６Ｒ，１６Ｇ，１６Ｂによる蒸着位置の基板の搬送方向手前側の位置を撮像可能に撮像手段４が設けられている。この撮像手段４は、蒸着マスク１６Ｂに形成されたアライメントマーク１９と有機ＥＬ表示用基板９のピクセル８とを撮像するもので、搬送手段２の下側にて上記蒸着マスク１６Ｂの二つの片部１８に対応して二台設けられており、矢印Ａ方向と略直交方向に電子ビームを走査する走査型電子顕微鏡である。   An imaging means 4 is provided so as to be able to image the position on the near side of the substrate transport direction of the deposition position by the deposition masks 16R, 16G, and 16B. The imaging means 4 images the alignment marks 19 formed on the vapor deposition mask 16B and the pixels 8 of the organic EL display substrate 9, and two pieces of the vapor deposition mask 16B are provided below the conveyance means 2. Two scanning electron microscopes are provided corresponding to 18 and scans an electron beam in a direction substantially orthogonal to the arrow A direction.

上記蒸着マスク１６Ｒ，１６Ｇ，１６Ｂを撮像手段４と一体的に有機ＥＬ表示用基板９面に平行な面内にて矢印Ａで示す搬送方向と略直交する方向（図１において、手前から奥に向かう方向）に移動可能にアライメント手段５が設けられている。このアライメント手段５は、撮像手段４による撮像画像に基づいて検出された蒸着マスク１６Ｂのアライメントマーク１９の基準位置とピクセル８の基準位置との間の位置ずれ量が所定値となるように位置ずれ補正すると共に、蒸着マスク１６Ｒ，１６Ｇ，１６Ｂと有機ＥＬ表示用基板９と間の隙間を所定値に維持するためのもので、有機ＥＬ表示用基板９がヨーイング及びピッチングしながら搬送されても有機ＥＬ表示用基板９の動きに追従して蒸着源ユニット３Ｒ，３Ｇ，３Ｂを移動して有機ＥＬ表示用基板９の所定位置に発光層のパターンを形成可能とするものである。   The vapor deposition masks 16R, 16G, and 16B are integrated with the imaging means 4 in a plane parallel to the surface of the organic EL display substrate 9 and in a direction substantially orthogonal to the transport direction indicated by the arrow A (in FIG. 1, from the front to the back). The alignment means 5 is provided so as to be movable in the direction of heading. This alignment means 5 is displaced so that the amount of displacement between the reference position of the alignment mark 19 of the vapor deposition mask 16B and the reference position of the pixel 8 detected based on the image taken by the imaging means 4 becomes a predetermined value. In addition to correcting, the gap between the vapor deposition masks 16R, 16G, and 16B and the organic EL display substrate 9 is maintained at a predetermined value. Even if the organic EL display substrate 9 is conveyed while yawing and pitching, it is organic. The evaporation source units 3R, 3G, and 3B are moved following the movement of the EL display substrate 9 so that a light emitting layer pattern can be formed at a predetermined position of the organic EL display substrate 9.

具体的には、アライメント手段５は、蒸着源ユニット３Ｒ，３Ｇ，３Ｂを基板の搬送方向に対して前後及び左右に移動させると共に、真ん中の蒸着源ユニット３Ｇの中心を軸にして有機ＥＬ表示用基板９の面に平行な面内を所定角度だけ回転させ、さらには、上下動させて蒸着マスク１６Ｒ，１６Ｇ，１６Ｂと有機ＥＬ表示用基板９との位置ずれ補正及び両者間の隙間を一定に保持することができるように構成されている。   Specifically, the alignment means 5 moves the vapor deposition source units 3R, 3G, 3B to the front and rear and the left and right with respect to the substrate transport direction, and for organic EL display with the center of the middle vapor deposition source unit 3G as an axis. The plane parallel to the surface of the substrate 9 is rotated by a predetermined angle, and further moved up and down to correct the positional deviation between the vapor deposition masks 16R, 16G and 16B and the organic EL display substrate 9 and to keep the gap between them constant. It is comprised so that it can hold | maintain.

次に、このように構成された蒸着装置の動作及び該蒸着装置を使用して行う蒸着方法について説明する。
先ず、ピクセル８を形成した面とは反対面が搬送手段２の基板保持部１０に設けられた複数の静電チャック１１に吸着されて、有機ＥＬ表示用基板９が矢印Ａ方向に一定速度で搬送される。 Next, the operation of the vapor deposition apparatus configured as described above and the vapor deposition method performed using the vapor deposition apparatus will be described.
First, the surface opposite to the surface on which the pixels 8 are formed is attracted to a plurality of electrostatic chucks 11 provided on the substrate holding unit 10 of the transport means 2 so that the organic EL display substrate 9 is moved at a constant speed in the direction of arrow A. Be transported.

基板の搬送方向先頭部が撮像手段４の上方位置に達すると、撮像手段４による基板表面と蒸着マスク１６Ｂのアライメントマーク１９との撮像が開始され、取得された撮像画像を図示省略の画像処理部において画像処理して、有機ＥＬ表示用基板９のピクセル８の基準位置（例えば、基板の搬送方向に平行な図２に示すドレイン信号線７の左側縁部）及び蒸着マスク１６Ｂのアライメントマーク１９の基準位置（例えば、基板の搬送方向に平行な左側縁部）が検出され、両者間の距離が計測される。   When the leading portion of the substrate in the transport direction reaches a position above the imaging unit 4, imaging of the substrate surface and the alignment mark 19 of the vapor deposition mask 16B by the imaging unit 4 is started, and the acquired captured image is not illustrated. In the image processing, the reference position of the pixel 8 of the organic EL display substrate 9 (for example, the left edge portion of the drain signal line 7 shown in FIG. 2 parallel to the substrate transport direction) and the alignment mark 19 of the vapor deposition mask 16B. A reference position (for example, the left edge parallel to the substrate transport direction) is detected, and the distance between the two is measured.

この場合、先ず、有機ＥＬ表示用基板９が所定距離だけ搬送される間に、基板搬送方向に略直交する方向へずれるピクセル８の基準位置のずれ量を検出し、上記有機ＥＬ表示用基板９の移動距離と上記ピクセル８の基準位置のずれ量から有機ＥＬ表示用基板９の搬送方向に対する傾き角度を演算し、アライメント手段５を駆動して該角度だけ蒸着源ユニット３Ｒ，３Ｇ，３Ｂと撮像手段４とを一体的に回転する。こうして、有機ＥＬ表示用基板９の搬送方向の中心線に対して蒸着マスク１６Ｒ，１６Ｇ，１６Ｂの同方向の中心線を平行に合わせる。   In this case, first, while the organic EL display substrate 9 is transported by a predetermined distance, the shift amount of the reference position of the pixel 8 shifted in a direction substantially orthogonal to the substrate transport direction is detected, and the organic EL display substrate 9 is detected. The tilt angle with respect to the transport direction of the organic EL display substrate 9 is calculated from the shift distance of the pixel 8 and the reference position of the pixel 8, and the alignment means 5 is driven to image the vapor deposition source units 3R, 3G, 3B by that angle. The means 4 is rotated integrally. Thus, the center lines in the same direction of the vapor deposition masks 16R, 16G, and 16B are aligned in parallel with the center line in the transport direction of the organic EL display substrate 9.

次に、有機ＥＬ表示用基板９のピクセル８の基準位置と蒸着マスク１６Ｂのアライメントマーク１９の基準位置との間の距離が所定距離となるように、アライメント手段５により蒸着源ユニット３Ｒ，３Ｇ，３Ｂと撮像手段４とを一体的に基板搬送方向と略直交方向に移動する。これにより、三つの蒸着マスク１６Ｒ，１６Ｇ，１６Ｂの各開口部１５が有機ＥＬ表示用基板９の対応色のピクセル８と同位置に位置付けられる。   Next, the vapor deposition source units 3R, 3G, and 3G are aligned by the alignment means 5 so that the distance between the reference position of the pixel 8 of the organic EL display substrate 9 and the reference position of the alignment mark 19 of the vapor deposition mask 16B becomes a predetermined distance. 3B and the image pickup means 4 are integrally moved in a direction substantially orthogonal to the substrate transport direction. Thereby, each opening 15 of the three vapor deposition masks 16R, 16G, and 16B is positioned at the same position as the pixel 8 of the corresponding color of the organic EL display substrate 9.

さらに、有機ＥＬ表示用基板９が所定距離搬送されて基板の搬送方向先頭部が蒸着マスク１６Ｂの上方に達すると蒸着マスク１６Ｂと有機ＥＬ表示用基板９との間の静電容量を検出し、該静電容量が所定値となるようにアライメント手段５により蒸着源ユニット３を上下動して、蒸着マスク１６Ｂと有機ＥＬ表示用基板９との隙間を約５０μｍ〜約１００μｍに保つ動作が実行される。   Further, when the organic EL display substrate 9 is transported a predetermined distance and the leading portion of the substrate transport direction reaches above the vapor deposition mask 16B, the capacitance between the vapor deposition mask 16B and the organic EL display substrate 9 is detected, The operation of moving the vapor deposition source unit 3 up and down by the alignment means 5 so that the electrostatic capacitance becomes a predetermined value and maintaining the gap between the vapor deposition mask 16B and the organic EL display substrate 9 at about 50 μm to about 100 μm is executed. The

同時に、蒸着源ユニット３Ｂの箱体１３の側面に設けた複数のレーザ変位計２２により有機ＥＬ表示用基板９表面の平坦度を検出し、基板表面が平坦となるように基板裏面に設けられた各静電チャック１１の突出量を制御する。これにより、蒸着マスク１６Ｂ面とそれに対向した基板面との隙間が略全面に亘って均一になる。   At the same time, the flatness of the surface of the organic EL display substrate 9 is detected by a plurality of laser displacement meters 22 provided on the side surface of the box 13 of the vapor deposition source unit 3B, and provided on the back surface of the substrate so that the substrate surface becomes flat. The protrusion amount of each electrostatic chuck 11 is controlled. Thereby, the clearance gap between the vapor deposition mask 16B surface and the board | substrate surface facing it becomes uniform over substantially the whole surface.

有機ＥＬ表示用基板９がさらに搬送されて基板の搬送方向先頭側の各ピクセル８が対応色の蒸着マスク１６Ｒ，１６Ｇ，１６Ｂの開口部１５の上方位置に達すると、各蒸着源ユニット３Ｒ，３Ｇ，３Ｂのシャッタ２１を順次開いて蒸着を開始する。即ち、シャッタ２１が開かれると、ルツボ１４内で溶融した発光材料１７Ｒ，１７Ｇ，１７Ｂが各蒸着マスク１６Ｒ，１６Ｇ，１６Ｂの開口部１５を通過可能となり、有機ＥＬ表示用基板９のピクセル８上に対応色の発光材料１７Ｒ，１７Ｇ，１７Ｂが蒸着される。なお、基板の移動距離は、搬送手段２に備えた図示省略の位置センサーの出力に基づいて算出される。また、シャッタ２１の開閉は、上記基板の移動距離とメモリに保存された設定値とを比較し、両者が一致したタイミングで行われる。   When the organic EL display substrate 9 is further transported and each pixel 8 on the leading side in the transport direction of the substrate reaches a position above the opening 15 of the corresponding color deposition mask 16R, 16G, 16B, each deposition source unit 3R, 3G. , 3B shutters 21 are sequentially opened to start vapor deposition. In other words, when the shutter 21 is opened, the light emitting materials 17R, 17G, and 17B melted in the crucible 14 can pass through the openings 15 of the respective vapor deposition masks 16R, 16G, and 16B, and on the pixels 8 of the organic EL display substrate 9. The light emitting materials 17R, 17G, and 17B having the corresponding colors are deposited. The moving distance of the substrate is calculated based on the output of a position sensor (not shown) provided in the transport unit 2. The shutter 21 is opened / closed at a timing when the movement distance of the substrate is compared with a set value stored in the memory, and the two match.

以降、有機ＥＬ表示用基板９を搬送しながら、上述のようにして、アライメント手段５を駆動して蒸着源ユニット３Ｒ，３Ｇ，３Ｂを移動し、蒸着マスク１６Ｒ，１６Ｇ，１６Ｂを有機ＥＬ表示用基板９のヨーイング及びピッチングに追従させて蒸着が実行される。これにより、各色の発光材料１７Ｒ，１７Ｇ，１７Ｂが対応色のピクセル８上に精度良く蒸着され、図５に示すようにストライプ状のＲＧＢ発光層のパターン２３Ｒ，２３Ｇ，２３Ｂが形成されることになる。   Thereafter, while transporting the organic EL display substrate 9, the alignment means 5 is driven as described above to move the vapor deposition source units 3R, 3G, 3B, and the vapor deposition masks 16R, 16G, 16B are used for organic EL display. Deposition is performed following the yawing and pitching of the substrate 9. As a result, the light emitting materials 17R, 17G, and 17B of the respective colors are accurately deposited on the corresponding color pixels 8, and the stripe-shaped RGB light emitting layer patterns 23R, 23G, and 23B are formed as shown in FIG. Become.

なお、上記実施形態においては、有機ＥＬ表示用基板９の幅に略等しい長さの蒸着源ユニット３Ｒ，３Ｇ，３Ｂを夫々一つ配置した場合について説明したが、本発明はこれに限られず、蒸着源ユニットは、有機ＥＬ表示用基板９の搬送方向と直交方向の幅よりも長さの短い複数の単位蒸着源ユニットを基板の搬送方向に略直交方向に一直線状に並べて形成したものであってもよく、又は基板の搬送方向に略直交方向に互い違いに並べて形成したものであってもよい。   In the above-described embodiment, the case where the vapor deposition source units 3R, 3G, and 3B each having a length substantially equal to the width of the organic EL display substrate 9 is disposed is described. However, the present invention is not limited to this. The vapor deposition source unit is formed by arranging a plurality of unit vapor deposition source units having a length shorter than the width in the direction orthogonal to the transport direction of the organic EL display substrate 9 in a straight line in a direction substantially orthogonal to the substrate transport direction. Alternatively, they may be formed alternately in a direction substantially orthogonal to the substrate transport direction.

また、上記実施形態においては、蒸着源ユニット３Ｒ，３Ｇ，３Ｂを三つ備えたものである場合について説明したが、本発明はこれに限られず、蒸着源ユニットは一つでもよく、個数は限定されない。   In the above-described embodiment, the case where the three evaporation source units 3R, 3G, and 3B are provided has been described. However, the present invention is not limited to this, and the number of evaporation source units may be one and the number is limited. Not.

さらに、上記実施形態においては、撮像手段４が走査型電子顕微鏡である場合について説明したが、本発明はこれに限られず、撮像手段４は、ラインカメラでもよい。この場合、ラインカメラは、複数の受光素子が基板搬送方向と略直交方向に一直線状に並ぶように配置するとよい。   Furthermore, although the case where the imaging unit 4 is a scanning electron microscope has been described in the above embodiment, the present invention is not limited to this, and the imaging unit 4 may be a line camera. In this case, the line camera may be arranged so that the plurality of light receiving elements are aligned in a straight line in a direction substantially orthogonal to the substrate transport direction.

そして、以上の説明においては、基板が有機ＥＬ表示用基板９である場合について述べたが、本発明はこれに限られず、基板は、ストライプ状の蒸着パターンを形成しようとするものであれば如何なるものであってもよい。   In the above description, the case where the substrate is the organic EL display substrate 9 has been described. However, the present invention is not limited to this, and the substrate is not limited as long as it is intended to form a stripe-shaped vapor deposition pattern. It may be a thing.

１…真空チャンバ
２…搬送手段
３Ｒ，３Ｇ，３Ｂ…蒸着源ユニット
４…撮像手段
５…アライメント手段
８…ピクセル（基準パターン）
９…有機ＥＬ表示用基板
１３…箱体
１４…ルツボ
１５…開口部
１６Ｒ，１６Ｇ，１６Ｂ…蒸着マスク
１７Ｒ，１７Ｇ，１７Ｂ…発光材料（蒸着材料）
１８…片部
１９…アライメントマーク DESCRIPTION OF SYMBOLS 1 ... Vacuum chamber 2 ... Conveyance means 3R, 3G, 3B ... Deposition source unit 4 ... Imaging means 5 ... Alignment means 8 ... Pixel (reference pattern)
DESCRIPTION OF SYMBOLS 9 ... Organic EL display substrate 13 ... Box 14 ... Crucible 15 ... Opening 16R, 16G, 16B ... Evaporation mask 17R, 17G, 17B ... Luminescent material (deposition material)
18 ... one part 19 ... alignment mark

Claims (9)

基板を搬送しながら、該基板に対向して配置された蒸着マスクの開口部を通して前記基板表面に蒸着材料を蒸着して所定のパターンを形成する蒸着方法であって、
前記蒸着マスクによる蒸着位置の前記基板の搬送方向手前側の位置を撮像可能に設けられた撮像手段により、前記蒸着マスクに形成されたアライメントマークと前記基板表面に予め形成された基準パターンとを撮像し、
前記撮像画像に基づいて前記アライメントマークの基準位置と前記基準パターンの基準位置との間の位置ずれ量を検出し、該位置ずれ量が所定値となるように前記蒸着マスクを前記基板面に平行な面内にて前記搬送方向と略直交する方向に移動して位置合わせしながら、前記基準パターン上に前記所定のパターンを蒸着形成する、
ことを特徴とする蒸着方法。 An evaporation method for forming a predetermined pattern by evaporating an evaporation material on the surface of the substrate through an opening of an evaporation mask arranged to face the substrate while conveying the substrate,
The alignment mark formed on the vapor deposition mask and the reference pattern previously formed on the substrate surface are imaged by an imaging means provided so as to be able to image the position of the vapor deposition position on the near side in the transport direction of the substrate. And
A displacement amount between a reference position of the alignment mark and a reference position of the reference pattern is detected based on the captured image, and the deposition mask is parallel to the substrate surface so that the displacement amount becomes a predetermined value. The predetermined pattern is vapor-deposited on the reference pattern while moving and aligning in a direction substantially orthogonal to the transport direction within a plane.
The vapor deposition method characterized by the above-mentioned. 前記基板は、有機ＥＬ表示用基板であることを特徴とする請求項１記載の蒸着方法。   The vapor deposition method according to claim 1, wherein the substrate is an organic EL display substrate. 基板を搬送しながら、該基板に対向して配置された蒸着マスクの開口部を通して前記基板表面に蒸着材料を蒸着して所定のパターンを形成する蒸着装置であって、
真空チャンバ内部に、
前記基板を搬送する搬送手段と、
前記搬送手段の下方に設けられ、上端部を開口し前記基板の搬送方向に略直交する方向に長軸を有する箱体の内部に蒸着材料を加熱して溶融させるルツボを有し、さらに前記箱体の上端部に前記箱体の長軸方向に複数の開口部を所定間隔で並設した前記蒸着マスクを配設した蒸着源ユニットと、
前記蒸着マスクによる蒸着位置の前記基板の搬送方向手前側の位置を撮像可能に設けられ、前記蒸着マスクに形成されたアライメントマークと前記基板表面に予め形成された基準パターンとを撮像する撮像手段と、
前記撮像手段による撮像画像に基づいて検出された前記アライメントマークの基準位置と前記基準パターンの基準位置との間の位置ずれ量が所定値となるように前記蒸着マスクを前記基板面に平行な面内にて前記搬送方向と略直交する方向に移動して位置合わせするアライメント手段と、
を備えたことを特徴とする蒸着装置。 A vapor deposition apparatus that forms a predetermined pattern by vapor-depositing a vapor deposition material on the surface of the substrate through an opening of a vapor deposition mask arranged to face the substrate while conveying the substrate,
Inside the vacuum chamber,
Transport means for transporting the substrate;
A crucible provided below the transport means, having an upper end opened and having a major axis in a direction substantially perpendicular to the transport direction of the substrate; A vapor deposition source unit in which the vapor deposition mask in which a plurality of openings are arranged at predetermined intervals in the major axis direction of the box at the upper end of the body;
An imaging means provided so as to be able to image a position on the near side of the substrate in the transport direction of the deposition position by the deposition mask, and imaging an alignment mark formed on the deposition mask and a reference pattern previously formed on the substrate surface; ,
The vapor deposition mask is a surface parallel to the substrate surface so that the amount of positional deviation between the reference position of the alignment mark and the reference position of the reference pattern detected based on the image captured by the imaging means becomes a predetermined value. Alignment means that moves and aligns in a direction substantially perpendicular to the transport direction within,
A vapor deposition apparatus comprising: 前記蒸着源ユニットは、長軸方向の長さの短い複数の単位蒸着源ユニットを前記基板の搬送方向に略直交方向に一直線状に並べて所定長さに形成されたものであることを特徴とする請求項３記載の蒸着装置。   The vapor deposition source unit is formed by aligning a plurality of unit vapor deposition source units having a short length in the major axis direction in a straight line in a direction substantially orthogonal to the substrate transport direction and having a predetermined length. The vapor deposition apparatus of Claim 3. 前記蒸着源ユニットは、長軸方向の長さの短い複数の単位蒸着源ユニットを前記基板の搬送方向に略直交方向に互い違いに並べて所定長さに形成されたものであることを特徴とする請求項３記載の蒸着装置。   The vapor deposition source unit is formed by alternately arranging a plurality of unit vapor deposition source units having a short length in a major axis direction in a direction substantially orthogonal to a transport direction of the substrate to have a predetermined length. Item 4. The vapor deposition apparatus according to Item 3. 前記蒸着源ユニットは、前記基板の搬送方向に所定間隔で複数並設され、複数種の蒸着材料を同時に蒸着可能に形成されたことを特徴とする請求項３〜５のいずれか１項に記載の蒸着装置。   6. The vapor deposition source unit according to claim 3, wherein a plurality of the vapor deposition source units are arranged in parallel in the transport direction of the substrate at a predetermined interval so that a plurality of types of vapor deposition materials can be vapor deposited simultaneously. Vapor deposition equipment. 前記蒸着マスクは、前記蒸着源ユニットの前記箱体の側面から前記基板の搬送方向手前側に突出させて片部を有し、該片部に前記アライメントマークを形成したことを特徴とする請求項３〜６のいずれか１項に記載の蒸着装置。   The vapor deposition mask has a piece projecting from the side surface of the box of the vapor deposition source unit to the front side in the transport direction of the substrate, and the alignment mark is formed on the piece. The vapor deposition apparatus of any one of 3-6. 前記撮像手段は、走査型電子顕微鏡であることを特徴とする請求項３〜７のいずれか１項に記載の蒸着装置。   The vapor deposition apparatus according to claim 3, wherein the imaging unit is a scanning electron microscope. 前記基板は、有機ＥＬ表示用基板であることを特徴とする請求項３〜８のいずれか１項に記載の蒸着装置。   The vapor deposition apparatus according to claim 3, wherein the substrate is an organic EL display substrate.
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