JP2010241680A - グラフェンの製造方法 - Google Patents
グラフェンの製造方法 Download PDFInfo
- Publication number
- JP2010241680A JP2010241680A JP2010087688A JP2010087688A JP2010241680A JP 2010241680 A JP2010241680 A JP 2010241680A JP 2010087688 A JP2010087688 A JP 2010087688A JP 2010087688 A JP2010087688 A JP 2010087688A JP 2010241680 A JP2010241680 A JP 2010241680A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- carbon
- graphene
- sic
- containing material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/145—Carbon only, e.g. carbon black, graphite
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B3/0061—Methods for manipulating nanostructures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/168—After-treatment
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2214/00—Aspects relating to resistive heating, induction heating and heating using microwaves, covered by groups H05B3/00, H05B6/00
- H05B2214/04—Heating means manufactured by using nanotechnology
Abstract
【解決手段】本発明に係るグラフェンの製造方法は、基板上に炭素含有物質を整列させ、アニーリングを実施してグラフェンを製造でき、非常に簡単な工程で、大面積高品質のグラフェンを提供できる。
【選択図】図3
Description
11,12 カーボンナノチューブ
13,23 二次元構造のグラフェン
21,22,23 フラーレン
31 カーボンナノチューブまたはフラーレン
33 基板領域
34 グラフェン
L アニーリング工程
Claims (8)
- グラフェンの製造方法において、
基板上に炭素含有物質を整列させる段階と、
前記炭素含有物質が形成された前記基板に対してアニーリングを実施し、前記基板上にグラフェンを製造する段階とを含むグラフェンの製造方法。 - 前記炭素含有物質は、カーボンナノチューブまたはフラーレンであることを特徴とする請求項1に記載のグラフェンの製造方法。
- 前記アニーリングは、前記基板の前記炭素含有物質と接触した面の局部溶融温度または再結晶温度以上の温度に加熱することによってなされることを特徴とする請求項1または2に記載のグラフェンの製造方法。
- 前記基板はSi、SiC、SOI、a−Si、poly−Si、a−SiCまたはガラス基板であることを特徴とする請求項1から3のいずれか一項に記載のグラフェンの製造方法。
- 前記基板はa−Si、poly−Si、a−SiC、GeまたはGeCのうち、少なくともいずれか一つが形成されたガラス基板または石英基板であることを特徴とする請求項1から3のいずれか一項に記載のグラフェンの製造方法。
- 前記アニーリング工程は、レーザまたはRTA工程によることを特徴とする請求項1から5のいずれか一項に記載のグラフェンの製造方法。
- 前記アニーリング工程によって、前記炭素含有物質下部の基板には、SiCが形成されることを特徴とする請求項1から3のいずれか一項に記載のグラフェンの製造方法。
- 前記基板上に炭素含有物質を整列させる段階は、前記基板上に多数の金属触媒を整列させ、炭素ソースガスを供給することを含むことを特徴とする請求項1から7のいずれか一項に記載のグラフェンの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090029882A KR101611410B1 (ko) | 2009-04-07 | 2009-04-07 | 그래핀의 제조 방법 |
KR10-2009-0029882 | 2009-04-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010241680A true JP2010241680A (ja) | 2010-10-28 |
JP5763302B2 JP5763302B2 (ja) | 2015-08-12 |
Family
ID=42826413
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010087688A Expired - Fee Related JP5763302B2 (ja) | 2009-04-07 | 2010-04-06 | グラフェンの製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8632855B2 (ja) |
JP (1) | JP5763302B2 (ja) |
KR (1) | KR101611410B1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20130055111A (ko) * | 2011-11-18 | 2013-05-28 | 엘지디스플레이 주식회사 | 그래핀막의 제조방법, 이를 이용한 터치소자의 제조방법 |
JP2013103286A (ja) * | 2011-11-11 | 2013-05-30 | Ihi Corp | ナノ構造物およびナノ構造物の製造方法 |
JP2013180930A (ja) * | 2012-03-02 | 2013-09-12 | Osaka Univ | SiC表面へのグラフェンの低温形成方法 |
JP2016538236A (ja) * | 2013-12-30 | 2016-12-08 | コリア リサーチ インスティテュート オブ スタンダーズ アンド サイエンス | 単結晶グラフェンの製造方法 |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101758649B1 (ko) * | 2010-03-31 | 2017-07-18 | 삼성전자주식회사 | 게르마늄층을 이용한 그래핀 제조방법 |
US8877340B2 (en) * | 2010-07-27 | 2014-11-04 | International Business Machines Corporation | Graphene growth on a non-hexagonal lattice |
US20120068161A1 (en) * | 2010-09-16 | 2012-03-22 | Lee Keon-Jae | Method for forming graphene using laser beam, graphene semiconductor manufactured by the same, and graphene transistor having graphene semiconductor |
US20140150970A1 (en) | 2010-11-19 | 2014-06-05 | Ppg Industries Ohio, Inc. | Structural adhesive compositions |
US8796361B2 (en) | 2010-11-19 | 2014-08-05 | Ppg Industries Ohio, Inc. | Adhesive compositions containing graphenic carbon particles |
KR20120087844A (ko) * | 2011-01-28 | 2012-08-07 | 국립대학법인 울산과학기술대학교 산학협력단 | 그라펜의 제조 방법, 이를 포함하는 투명 전극, 활성층, 이를 구비한 표시소자, 전자소자, 광전소자, 배터리, 태양전지 및 염료감응 태양전지 |
WO2012150761A1 (ko) * | 2011-05-03 | 2012-11-08 | 한국과학기술원 | 그래핀의 제조 방법 및 그래핀의 제조 장치 |
US9475946B2 (en) | 2011-09-30 | 2016-10-25 | Ppg Industries Ohio, Inc. | Graphenic carbon particle co-dispersions and methods of making same |
US9761903B2 (en) | 2011-09-30 | 2017-09-12 | Ppg Industries Ohio, Inc. | Lithium ion battery electrodes including graphenic carbon particles |
US10294375B2 (en) | 2011-09-30 | 2019-05-21 | Ppg Industries Ohio, Inc. | Electrically conductive coatings containing graphenic carbon particles |
US9832818B2 (en) | 2011-09-30 | 2017-11-28 | Ppg Industries Ohio, Inc. | Resistive heating coatings containing graphenic carbon particles |
US10240052B2 (en) | 2011-09-30 | 2019-03-26 | Ppg Industries Ohio, Inc. | Supercapacitor electrodes including graphenic carbon particles |
US8486363B2 (en) | 2011-09-30 | 2013-07-16 | Ppg Industries Ohio, Inc. | Production of graphenic carbon particles utilizing hydrocarbon precursor materials |
US9988551B2 (en) | 2011-09-30 | 2018-06-05 | Ppg Industries Ohio, Inc. | Black pigments comprising graphenic carbon particles |
US10763490B2 (en) | 2011-09-30 | 2020-09-01 | Ppg Industries Ohio, Inc. | Methods of coating an electrically conductive substrate and related electrodepositable compositions including graphenic carbon particles |
US9574094B2 (en) | 2013-12-09 | 2017-02-21 | Ppg Industries Ohio, Inc. | Graphenic carbon particle dispersions and methods of making same |
US9938416B2 (en) | 2011-09-30 | 2018-04-10 | Ppg Industries Ohio, Inc. | Absorptive pigments comprising graphenic carbon particles |
CN102492922B (zh) * | 2011-12-27 | 2013-07-03 | 哈尔滨工业大学 | 一种采用热蒸发GeC制备石墨烯的方法 |
TWI458678B (zh) | 2011-12-30 | 2014-11-01 | Ind Tech Res Inst | 石墨烯層的形成方法 |
KR101431606B1 (ko) | 2014-02-24 | 2014-08-22 | (주)앤피에스 | 기판 처리 장치 |
WO2015180163A1 (en) * | 2014-05-30 | 2015-12-03 | East China University Of Science And Technology | Methods and systems for converting carbon dioxide into graphene |
US9287359B1 (en) * | 2014-09-15 | 2016-03-15 | Wisconsin Alumni Research Foundation | Oriented bottom-up growth of armchair graphene nanoribbons on germanium |
CN105731426A (zh) * | 2014-12-10 | 2016-07-06 | 黑龙江鑫达企业集团有限公司 | 一种采用热蒸发GeC制备石墨烯的方法 |
KR101716785B1 (ko) * | 2015-03-02 | 2017-03-28 | 서울대학교산학협력단 | 그래핀의 제조 방법 및 제조 장치 |
US10377928B2 (en) | 2015-12-10 | 2019-08-13 | Ppg Industries Ohio, Inc. | Structural adhesive compositions |
US10351661B2 (en) | 2015-12-10 | 2019-07-16 | Ppg Industries Ohio, Inc. | Method for producing an aminimide |
US11396696B2 (en) | 2016-03-18 | 2022-07-26 | Honda Motor Co., Ltd. | Method for continuous coating of metal foils and wires by high-quality graphene |
US10273574B2 (en) | 2016-03-18 | 2019-04-30 | Honda Motor Co., Ltd. | Method for continuous production of high quality graphene |
KR102517904B1 (ko) | 2016-04-29 | 2023-04-05 | 솔브레인 주식회사 | 그래핀의 제조방법 |
US9761669B1 (en) | 2016-07-18 | 2017-09-12 | Wisconsin Alumni Research Foundation | Seed-mediated growth of patterned graphene nanoribbon arrays |
WO2020226620A1 (en) * | 2019-05-06 | 2020-11-12 | Michael Kwabena Opoku | Method of making nanomaterials from a renewable carbon source |
US11433353B2 (en) | 2019-06-06 | 2022-09-06 | Savannah River Nuclear Solutions, Llc | Hydrogen isotope separation methods and systems |
CN113840801B (zh) * | 2020-04-24 | 2024-04-16 | 国家纳米科学中心 | 一种超快生长石墨烯的方法 |
KR102482649B1 (ko) * | 2020-07-09 | 2022-12-29 | (주)에프에스티 | 극자외선 리소그라피용 펠리클의 제조방법 |
JP7192171B2 (ja) | 2020-10-04 | 2022-12-20 | 株式会社Exizzle-Line | 自動車用ルームミラー |
US11618681B2 (en) | 2021-06-28 | 2023-04-04 | Wisconsin Alumni Research Foundation | Graphene nanoribbons grown from aromatic molecular seeds |
KR102504698B1 (ko) * | 2022-04-04 | 2023-02-28 | 주식회사 그래핀랩 | 펠리클 제조방법 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004106168A (ja) * | 2002-09-17 | 2004-04-08 | Kofukin Seimitsu Kogyo (Shenzhen) Yugenkoshi | 一次元ナノ材料の方向及び形状の制御方法 |
JP2007031239A (ja) * | 2005-07-29 | 2007-02-08 | Sony Corp | 金属的カーボンナノチューブの破壊方法、半導体的カーボンナノチューブ集合体の製造方法、半導体的カーボンナノチューブ薄膜の製造方法、半導体的カーボンナノチューブの破壊方法、金属的カーボンナノチューブ集合体の製造方法、金属的カーボンナノチューブ薄膜の製造方法、電子素子の製造方法、カーボンナノチューブ集合体の製造方法、金属的カーボンナノチューブの選択的反応方法および半導体的カーボンナノチューブの選択的反応方法 |
JP2009062247A (ja) * | 2007-09-10 | 2009-03-26 | Univ Of Fukui | グラフェンシートの製造方法 |
JP2009143761A (ja) * | 2007-12-13 | 2009-07-02 | Fujitsu Ltd | グラフェンシートの製造方法、半導体装置の製造方法および半導体装置 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4434013A (en) * | 1980-02-19 | 1984-02-28 | Xerox Corporation | Method of making a self-aligned Schottky metal semi-conductor field effect transistor with buried source and drain |
KR900001825B1 (ko) * | 1984-11-14 | 1990-03-24 | 가부시끼가이샤 히다찌세이사꾸쇼 | 성막 지향성을 고려한 스퍼터링장치 |
JP2626289B2 (ja) * | 1990-03-27 | 1997-07-02 | 松下電器産業株式会社 | 半導体装置の製造方法 |
US5985452A (en) | 1997-03-18 | 1999-11-16 | Ucar Carbon Technology Corporation | Flexible graphite composite sheet and method |
JP3074170B1 (ja) | 1999-05-27 | 2000-08-07 | 大澤 映二 | ナノサイズ真球状黒鉛製造方法 |
JP2002348110A (ja) * | 2001-05-28 | 2002-12-04 | Mitsui Mining Co Ltd | 黒鉛粒子、及びその製造方法 |
JP4483152B2 (ja) | 2001-11-27 | 2010-06-16 | 富士ゼロックス株式会社 | 中空グラフェンシート構造体及び電極構造体とそれら製造方法並びにデバイス |
EP1434282A3 (en) * | 2002-12-26 | 2007-06-27 | Konica Minolta Holdings, Inc. | Protective layer for an organic thin-film transistor |
US7989067B2 (en) * | 2003-06-12 | 2011-08-02 | Georgia Tech Research Corporation | Incorporation of functionalizing molecules in nanopatterned epitaxial graphene electronics |
US8039961B2 (en) * | 2003-08-25 | 2011-10-18 | Samsung Electronics Co., Ltd. | Composite carbon nanotube-based structures and methods for removing heat from solid-state devices |
US7618300B2 (en) * | 2003-12-24 | 2009-11-17 | Duke University | Method of synthesizing small-diameter carbon nanotubes with electron field emission properties |
JP2007027505A (ja) * | 2005-07-19 | 2007-02-01 | Toshiba Corp | 半導体装置およびその製造方法 |
US7566410B2 (en) * | 2006-01-11 | 2009-07-28 | Nanotek Instruments, Inc. | Highly conductive nano-scaled graphene plate nanocomposites |
KR20060096413A (ko) | 2006-02-28 | 2006-09-11 | 카네카 코포레이션 | 필름 형상 그라파이트와 그 제조 방법 |
KR100741762B1 (ko) | 2006-03-28 | 2007-07-24 | 한국에너지기술연구원 | 그라파이트 박판 위에 탄소나노튜브를 합성하는 방법 |
US7550778B2 (en) * | 2006-05-17 | 2009-06-23 | Innovative Micro Technology | System and method for providing access to an encapsulated device |
US7416605B2 (en) * | 2007-01-08 | 2008-08-26 | Freescale Semiconductor, Inc. | Anneal of epitaxial layer in a semiconductor device |
US7824741B2 (en) * | 2007-08-31 | 2010-11-02 | Micron Technology, Inc. | Method of forming a carbon-containing material |
KR20090026568A (ko) * | 2007-09-10 | 2009-03-13 | 삼성전자주식회사 | 그라펜 시트 및 그의 제조방법 |
US8133793B2 (en) * | 2008-05-16 | 2012-03-13 | Sandisk 3D Llc | Carbon nano-film reversible resistance-switchable elements and methods of forming the same |
-
2009
- 2009-04-07 KR KR1020090029882A patent/KR101611410B1/ko active IP Right Grant
-
2010
- 2010-02-17 US US12/656,823 patent/US8632855B2/en not_active Expired - Fee Related
- 2010-04-06 JP JP2010087688A patent/JP5763302B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004106168A (ja) * | 2002-09-17 | 2004-04-08 | Kofukin Seimitsu Kogyo (Shenzhen) Yugenkoshi | 一次元ナノ材料の方向及び形状の制御方法 |
JP2007031239A (ja) * | 2005-07-29 | 2007-02-08 | Sony Corp | 金属的カーボンナノチューブの破壊方法、半導体的カーボンナノチューブ集合体の製造方法、半導体的カーボンナノチューブ薄膜の製造方法、半導体的カーボンナノチューブの破壊方法、金属的カーボンナノチューブ集合体の製造方法、金属的カーボンナノチューブ薄膜の製造方法、電子素子の製造方法、カーボンナノチューブ集合体の製造方法、金属的カーボンナノチューブの選択的反応方法および半導体的カーボンナノチューブの選択的反応方法 |
JP2009062247A (ja) * | 2007-09-10 | 2009-03-26 | Univ Of Fukui | グラフェンシートの製造方法 |
JP2009143761A (ja) * | 2007-12-13 | 2009-07-02 | Fujitsu Ltd | グラフェンシートの製造方法、半導体装置の製造方法および半導体装置 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013103286A (ja) * | 2011-11-11 | 2013-05-30 | Ihi Corp | ナノ構造物およびナノ構造物の製造方法 |
KR20130055111A (ko) * | 2011-11-18 | 2013-05-28 | 엘지디스플레이 주식회사 | 그래핀막의 제조방법, 이를 이용한 터치소자의 제조방법 |
KR101941957B1 (ko) | 2011-11-18 | 2019-01-25 | 엘지디스플레이 주식회사 | 그래핀막의 제조방법, 이를 이용한 터치소자의 제조방법 |
JP2013180930A (ja) * | 2012-03-02 | 2013-09-12 | Osaka Univ | SiC表面へのグラフェンの低温形成方法 |
JP2016538236A (ja) * | 2013-12-30 | 2016-12-08 | コリア リサーチ インスティテュート オブ スタンダーズ アンド サイエンス | 単結晶グラフェンの製造方法 |
US9834855B2 (en) | 2013-12-30 | 2017-12-05 | Korea Research Institute Of Standards And Science | Method for manufacturing monocrystalline graphene |
Also Published As
Publication number | Publication date |
---|---|
KR101611410B1 (ko) | 2016-04-11 |
US8632855B2 (en) | 2014-01-21 |
US20100255219A1 (en) | 2010-10-07 |
KR20100111447A (ko) | 2010-10-15 |
JP5763302B2 (ja) | 2015-08-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5763302B2 (ja) | グラフェンの製造方法 | |
Wang et al. | Direct CVD graphene growth on semiconductors and dielectrics for transfer‐free device fabrication | |
Xu et al. | Growth of 2D materials at the wafer scale | |
Khan et al. | Direct CVD growth of graphene on technologically important dielectric and semiconducting substrates | |
Chen et al. | Chemical vapor deposition growth of single-walled carbon nanotubes with controlled structures for nanodevice applications | |
TWI588285B (zh) | 在基板上成長碳薄膜或無機材料薄膜的方法 | |
Sun et al. | Low partial pressure chemical vapor deposition of graphene on copper | |
JP5353009B2 (ja) | 半導体装置の製造方法および半導体装置 | |
US20120068161A1 (en) | Method for forming graphene using laser beam, graphene semiconductor manufactured by the same, and graphene transistor having graphene semiconductor | |
Liu et al. | Aligned carbon nanotubes: from controlled synthesis to electronic applications | |
Song et al. | Graphene/h‐BN heterostructures: recent advances in controllable preparation and functional applications | |
CN107217242B (zh) | 一种电子器件介电衬底的表面修饰方法 | |
JP6754355B2 (ja) | グラフェンおよび電子素子ならびにこれらの製造方法 | |
Kitaura et al. | Chemical vapor deposition growth of graphene and related materials | |
Wang et al. | Scalable synthesis of graphene on patterned Ni and transfer | |
Lee et al. | Graphene on Group‐IV Elementary Semiconductors: The Direct Growth Approach and Its Applications | |
Chang et al. | Iron and cobalt silicide catalysts-assisted carbon nanostructures on the patterned Si substrates | |
WO2010122928A1 (ja) | グラフェン膜の作製方法 | |
Fukidome et al. | Site-selective epitaxy of graphene on Si wafers | |
Ma et al. | Investigation of electronic properties of graphene/Si field-effect transistor | |
Park et al. | Catalyst-free growth of readily detachable nanographene on alumina | |
KR101260606B1 (ko) | 플래쉬 램프를 이용한 그래핀 제조장치, 제조방법 및 이를 이용하여 제조된 그래핀 반도체 소자 | |
GAN et al. | Facile fabrication of the crossed nanotube-graphene junctions | |
KR102109930B1 (ko) | 보론 나이트라이드(bn) 층의 연속적인 형성 방법, 이를 이용한 전계 효과 트랜지스터 소자의 제조 방법, 및 이로부터 제조된 전계 효과 트랜지스터 | |
Yakubu et al. | Graphene synthesis by chemical vapour deposition (CVD): A review on growth mechanism and techniques |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130319 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140129 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140204 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140507 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140512 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140528 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140826 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141126 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20141226 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150512 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150611 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5763302 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |