JP2010205814A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP2010205814A JP2010205814A JP2009047789A JP2009047789A JP2010205814A JP 2010205814 A JP2010205814 A JP 2010205814A JP 2009047789 A JP2009047789 A JP 2009047789A JP 2009047789 A JP2009047789 A JP 2009047789A JP 2010205814 A JP2010205814 A JP 2010205814A
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- Prior art keywords
- insulating film
- electrode
- semiconductor
- semiconductor device
- pad
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 166
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 230000001681 protective effect Effects 0.000 claims abstract description 18
- 230000015572 biosynthetic process Effects 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 14
- 230000015556 catabolic process Effects 0.000 claims description 13
- 239000000945 filler Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 150000004767 nitrides Chemical class 0.000 claims description 11
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 abstract 2
- 230000001939 inductive effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 40
- 230000017525 heat dissipation Effects 0.000 description 18
- 229920005989 resin Polymers 0.000 description 15
- 239000011347 resin Substances 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 230000005855 radiation Effects 0.000 description 10
- 238000012986 modification Methods 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 238000007789 sealing Methods 0.000 description 8
- 230000005684 electric field Effects 0.000 description 6
- 239000010931 gold Substances 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
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- H01L23/3157—Partial encapsulation or coating
- H01L23/3192—Multilayer coating
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- H01L23/367—Cooling facilitated by shape of device
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Abstract
【解決手段】半導体装置は、一の面に電極パッド103を有する半導体チップ101と、接続パッド201を有する実装基板200とを備えている。半導体チップ101の上には、電極パッド103を露出する開口部を有する保護膜105及び絶縁膜107が順次形成されている。電極パッド103の上には接続端子109が形成され、接続端子109は接続パッド201と接続され且つ絶縁膜107に囲まれている。絶縁膜107は実装基板200と密着している。
【選択図】図3
Description
103 電極パッド
103A ソース電極パッド
103B ドレイン電極パッド
103C ゲート電極パッド
105 保護膜
107 絶縁膜
109 接続端子
109A ソース接続端子
109B ドレイン接続端子
109C ゲート接続端子
109D 第1の接続端子
109E 第2の接続端子
109F 第3の接続端子
109G 第4の接続端子
111 形成基板
112 第1の窒化物半導体層
113 第2の窒化物半導体層
115 半導体層
117 ソース電極
118 ドレイン電極
119 ゲート電極
120 層間絶縁膜
200 実装基板
201 接続パッド
203 配線部
205 放熱部
210 フレーム
301 フィラー
303 放熱端子
401 形成基板
405 半導体層積層体
405A 活性領域
405B 絶縁分離領域
421 ソースフィンガー
423 ドレインフィンガー
425 ゲートフィンガー
426 ゲート配線
426A 第1のゲート配線
426B 第2のゲート配線
503A 第1のオーミック電極パッド
503B 第2のオーミック電極パッド
503C 第1のゲート電極パッド
503D 第2のゲート電極パッド
521 第1のオーミック電極フィンガー
523 第2のオーミック電極フィンガー
525A 第1のゲート電極フィンガー
525B 第2のゲート電極フィンガー
526A 第1のゲート配線
526B 第2のゲート配線
Claims (14)
- 一の面に電極パッドが形成された半導体チップと、
前記半導体チップの上に順次積層され且つ前記電極パッドを露出する開口部を有する保護膜及び絶縁膜と、
前記電極パッドの上に形成され且つ前記絶縁膜に囲まれた接続端子と、
接続パッドを有する実装基板とを備え、
前記接続端子は、前記接続パッドと接続され、
前記絶縁膜は、前記実装基板と密着していることを特徴とする半導体装置。 - 前記接続端子は、前記絶縁膜と間隔をおいて形成されていることを特徴とする請求項1に記載の半導体装置。
- 前記接続端子の側面は前記絶縁膜に覆われていることを特徴とする請求項1又は2に記載の半導体装置。
- 前記絶縁膜は、その内部に分散したフィラーを含み、
前記フィラーは、前記絶縁膜と比べて熱伝導率が大きい材料からなることを特徴とする請求項1〜3のいずれか1項に記載の半導体装置。 - 前記絶縁膜と比べて熱伝導率が大きい材料からなる放熱端子をさらに備え、
前記絶縁膜は、前記開口部と間隔をおいて形成された凹部を有し、
前記放熱端子は、前記凹部に形成されていることを特徴とする請求項1〜4のいずれか1項に記載の半導体装置。 - 前記凹部は、前記絶縁膜を貫通し前記保護膜を露出することを特徴とする請求項5に記載の半導体装置。
- 前記放熱端子は、窒化アルミニウム膜又はダイヤモンド膜からなることを特徴とする請求項5又は6に記載の半導体装置。
- 前記半導体チップは、形成基板及び該形成基板の上に形成された半導体層を有し、
前記半導体層は、窒化物半導体からなることを特徴とする請求項1〜7のいずれか1項に記載の半導体装置。 - 前記半導体チップは、形成基板及び該形成基板の上に形成された半導体層を有し、
前記半導体層は、炭化珪素からなることを特徴とする請求項1〜7のいずれか1項に記載の半導体装置。 - 前記絶縁膜と比べて熱伝導率が大きい材料からなる放熱端子をさらに備え、
前記半導体チップは、形成基板と、該形成基板の上に形成された半導体層と、前記半導体層の上に形成された複数のソースフィンガーを有するソース電極、複数のドレインフィンガーを有するドレイン電極及び複数のゲートフィンガーを有するゲート電極を有し、
前記ソースフィンガーと前記ドレインフィンガーとは前記半導体層の活性領域の上に交互に形成され、
前記ゲートフィンガーは、それぞれ前記ソースフィンガーと前記ドレインフィンガーとの間に形成され、
前記電極パッドは、前記ソース電極と接続されたソースパッド、前記ドレイン電極と接続されたドレインパッド及び前記ゲート電極と接続されたゲートパッドとを有し、
前記ソースパッドと前記ドレインパッドとは、前記活性領域を挟んで互いに反対側に形成されており、
前記絶縁膜は、前記開口部と間隔をおいて前記活性領域の上に形成された凹部を有し、
前記放熱端子は、前記凹部に形成されていることを特徴とする請求項1〜4のいずれか1項に記載の半導体装置。 - 前記絶縁膜と比べて熱伝導率が大きい材料からなる放熱端子をさらに備え、
前記半導体チップは、形成基板と、該形成基板の上に形成された半導体層と、前記半導体層の上に形成された複数の第1のオーミックフィンガーを有する第1のオーミック電極、複数の第2のオーミックフィンガーを有する第2のオーミック電極、複数の第1のゲートフィンガーを有する第1のゲート電極、複数の第2のゲートフィンガーを有する第2のゲート電極を有し、
前記第1のオーミックフィンガーと前記第2のオーミックフィンガーとは前記半導体層の活性領域の上に交互に形成され、
前記第1のゲートフィンガーと前記第2のゲートフィンガーは、それぞれ前記第1のオーミックフィンガーと前記第2のオーミックフィンガーとの間に形成され、
前記電極パッドは、前記第1のオーミック電極と接続された第1のオーミック電極パッド、前記第2のオーミック電極と接続された第2のオーミック電極パッド及び前記第1のゲート電極と接続された第1のゲート電極パッド、前記第2のゲート電極と接続された第2のゲート電極パッドとを有し、
前記第1のオーミック電極パッドと前記第2のオーミック電極パッドとは、前記活性領域を挟んで互いに反対側に形成されており、
前記絶縁膜は、前記開口部と間隔をおいて前記活性領域の上に形成された凹部を有し、
前記放熱端子は、前記凹部に形成されていることを特徴とする請求項1〜4のいずれか1項に記載の半導体装置。 - 形成基板の上に電極パッドを有する複数の半導体素子を形成する工程(a)と、
前記形成基板の上に、前記電極パッドを露出する開口部を有する保護膜及び絶縁膜を順次形成する工程(b)と、
前記電極パッドの上に接続端子を形成する工程(c)と、
前記半導体素子を切り出して半導体チップを形成する工程(d)と、
前記工程(d)よりも後に、複数の接続パッドを有する実装基板の上に、前記接続パッドと前記接続端子とが接続され且つ前記絶縁膜と前記実装基板の表面とが密着するように前記半導体素子を実装する工程(e)とを備えていることを特徴とする半導体装置の製造方法。 - 前記工程(b)よりも後で且つ前記工程(e)よりも前に、前記半導体素子の耐圧を検査する工程(f)をさらに備えていることを特徴とする請求項12に記載の半導体装置の製造方法。
- 前記工程(a)は、
前記形成基板の上に、窒化物又は炭化珪素からなる半導体層を形成する工程と、
前記半導体層の上に、前記電極パッドを形成する工程とを含むことを特徴とする請求項12又は13に記載の半導体装置の製造方法。
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US20120001200A1 (en) | 2012-01-05 |
US8497581B2 (en) | 2013-07-30 |
WO2010100703A1 (ja) | 2010-09-10 |
JP5420274B2 (ja) | 2014-02-19 |
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