JP2010177431A - 薄膜トランジスタ、多結晶酸化物半導体薄膜の製造方法、及び薄膜トランジスタの製造方法 - Google Patents
薄膜トランジスタ、多結晶酸化物半導体薄膜の製造方法、及び薄膜トランジスタの製造方法 Download PDFInfo
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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Abstract
【解決手段】第1工程として、基板12上に、IGZO系の組成を有する多結晶焼結体をターゲットとした気相成膜法を用いて、InとGaとZnからなる群のうち少なくとも1つの元素を含有する非晶質酸化物半導体からなる薄膜10Aを成膜する。第2工程として、非晶質酸化物半導体からなる薄膜10Aを、電気炉へ投入し、その表面粗さRa値を1.5nm以下として維持しつつ多結晶化する温度領域660℃〜840℃で焼成する。
【選択図】図4
Description
<2>前記多結晶酸化物半導体はIn−Ga−Zn−O系の透明酸化物であることを特徴とする<1>に記載の薄膜トランジスタ。
<3>前記多結晶酸化物半導体の結晶化度が70%以上であることを特徴とする<1>又は<2>に記載の薄膜トランジスタ。
<4>InとGaとZnからなる群のうち少なくとも1つの元素を含有する非晶質酸化物半導体の薄膜を、その表面粗さRa値を1.5nm以下として維持しつつ多結晶化する温度領域で焼成する工程を含むことを特徴とする多結晶酸化物半導体薄膜の製造方法。
<5>前記多結晶化された薄膜はIn−Ga−Zn−O系の透明酸化物を含有することを特徴とする<4>に記載の多結晶酸化物半導体薄膜の製造方法。
<6>前記温度領域は、660℃以上840℃以下であることを特徴とする<4>又は<5>に記載の多結晶酸化物半導体薄膜の製造方法。
<7>前記焼成は酸素雰囲気中で行われることを特徴とする<4>〜<6>のいずれか1つに記載の多結晶酸化物半導体薄膜の製造方法。
<8>InとGaとZnからなる群のうち少なくとも1つの元素を含有する非晶質酸化物半導体からなる層を、その表面粗さRa値を1.5nm以下として維持しつつ多結晶化する温度領域で焼成して活性層とする工程を含むことを特徴とする薄膜トランジスタの製造方法。
<9>前記活性層はIn−Ga−Zn−O系の透明酸化物を含有することを特徴とする<8>に記載の薄膜トランジスタの製造方法。
<10>前記温度領域は、660℃以上840℃以下であることを特徴とする<8>又は<9>に記載の薄膜トランジスタの製造方法。
<11>前記焼成は酸素を含む雰囲気中で行われることを特徴とする<8>〜<10>のいずれか1つに記載の薄膜トランジスタの製造方法。
本発明の多結晶酸化物半導体薄膜10は、多結晶のIGZO系の酸化物半導体を含有しており、かつ、その平坦性が高いものである。このため、多結晶酸化物半導体薄膜10は、TFTの活性層として用いた場合、活性層表面の凹凸を要因とするキャリアトラップによるTFT特性の低下及び品質のばらつきを回避できる。
基板12の材質は、後述する焼成温度領域に対して耐熱性を有するものであれば特に限定されることはなく、無機材料、金属材料、及び有機材料等が挙げられる。本実施形態では、特に、耐熱性のある、例えばYSZ(ジルコニア安定化イットリウム)、ガラス、石英、サファイア、MgO、SiC、ZnO、LiF、CaF2等の無機材料が好適に挙げられる。
本実施形態に係るTFTは、少なくとも、ゲート電極、ゲート絶縁層、活性層、ソース電極及びドレイン電極を有し、ゲート電極に電圧を印加して、活性層に流れる電流を制御し、ソース電極とドレイン電極間の電流をスイッチングする機能を有するアクテイブ素子である。
ゲート電極24は、電圧の印加により、ソース電極30とドレイン電極32との間に流れる電流を制御する。ゲート電極24を形成する材料としては、例えば、Al、Mo、Cr、Ta、Ti、Au、Ag等の金属、Al−Nd、APC等の合金、酸化錫、酸化亜鉛、酸化インジウム、酸化インジウム錫(ITO)、酸化亜鉛インジウム(IZO)等の金属酸化物導電体、ポリアニリン、ポリチオフェン、ポリピロ−ルなどの有機導電性化合物、またはこれらの混合物を好適に挙げられる。
ゲート絶縁層26を形成する材料としては、比誘電率の高い無機化合物や有機化合物が挙げられる。
ソース電極30とドレイン電極32は活性層28上に互いに離間して形成されている。
以下、上述した多結晶酸化物半導体薄膜10の製造方法について詳細に説明する。
まず、図4(a)及び(b)に示すように、基板12上に、公知の方法、例えば、スパッタリング法、パルスレーザー蒸着法(PLD法)等の気相成膜法を用いて、InとGaとZnからなる群のうち少なくとも1つの元素を含有する非晶質酸化物半導体からなる薄膜10Aを成膜する。ここで、スパッタリング法またはPLD法のターゲットとしては、IGZO系の組成を有する多結晶焼結体を単独で用いても良いが、IGZO系多結晶焼結体とZnOターゲットを同時に用いても良く、IGZO系多結晶焼結体とGa2O3ターゲットを同時に用いても良く、あるいはIn2O3ターゲット、Ga2O3ターゲット、ZnOターゲットを同時に用いても良い。
次に、図4(b)に示すように、非晶質酸化物半導体からなる薄膜10Aを、電気炉へ投入し、その表面粗さRa値を1.5nm以下として維持しつつ多結晶化する温度領域で焼成する。この温度領域は、660℃以上840℃以下であって、好ましくは、667℃以上800℃以下、特に好ましくは、700℃以上800℃以下である。
以下、上述した逆スタガ型のTFT20の製造方法について詳細に説明する。
以下、上述した逆スタガ型のTFT40の製造方法について詳細に説明する。
例えば、上記製造工程には、形成すべき活性層28に応じて、フォトリソグラフィによって焼成前の層28A又は焼成後の活性層28をパターニングする工程、形成すべき活性層28に対応した孔を有するマスクを介して所定の位置及び形状に焼成前の層28Aを形成する工程を含んでも良い。
本実施例では、上述したスパッタリング成膜(第1工程)及び酸素雰囲気中での焼成(第2工程)を経ることにより、IGZOからなる多結晶酸化物半導体薄膜10を形成した。
試料1:焼成前の薄膜、試料2:600℃で焼成した薄膜、試料3:633℃で焼成した薄膜、試料4:667℃で焼成した薄膜、試料5:700℃で焼成した薄膜、試料6:733℃で焼成した薄膜、試料7:767℃で焼成した薄膜、試料8:800℃で焼成した薄膜、試料9:833℃で焼成した薄膜、試料10:900℃で焼成した薄膜
各薄膜試料1〜10について、測定装置Rint−UltimaIII(リガク社)を用い、周知のX線回折法により回折強度の測定を行った。
測定角度範囲: 15deg〜80deg
ステップ幅: 0.01deg
走査速度: 4deg/min
次に、上記回折パターンに対し、解析ソフトJADE(リガク社)を用いて25度〜40度の範囲で多重ピーク分離を行い、各試料1〜10の結晶化度を算出した。この結晶化度は、次式で示される。
各薄膜試料における表面粗さは、原子間力顕微鏡(AFM、Pacific Nanotechnology社製 Nano-R)による各試料の3μm角のAFM像を用いて測定した。
各薄膜試料の光透過率を、日立製作所(株)製の分光光度計U−3310を用いて測定した。
モード: 波長スキャン
データモード: %T
スキャン範囲: 240〜900nm
スキャン速度: 600 nm/min
サンプリング間隔:1.00 nm
スリット: 2 nm
ホトマル電圧: 自動制御
光源切換モード: 自動切換
光源切換波長: 340.00 nm
10A 非晶質酸化物半導体薄膜
12 基板
20、40 TFT
24 ゲート電極
26 ゲート絶縁層
28 活性層
28A 層
30 ソース電極
32 ドレイン電極
Claims (11)
- 表面粗さRa値が1.5nm以下であり、InとGaとZnからなる群のうち少なくとも1つの元素を含有する多結晶酸化物半導体からなる活性層を備えることを特徴とする薄膜トランジスタ。
- 前記多結晶酸化物半導体はIn−Ga−Zn−O系の透明酸化物であることを特徴とする請求項1に記載の薄膜トランジスタ。
- 前記多結晶酸化物半導体の結晶化度が70%以上であることを特徴とする請求項1又は請求項2に記載の薄膜トランジスタ。
- InとGaとZnからなる群のうち少なくとも1つの元素を含有する非晶質酸化物半導体の薄膜を、その表面粗さRa値を1.5nm以下として維持しつつ多結晶化する温度領域で焼成する工程を含むことを特徴とする多結晶酸化物半導体薄膜の製造方法。
- 前記多結晶化された薄膜はIn−Ga−Zn−O系の透明酸化物を含有することを特徴とする請求項4に記載の多結晶酸化物半導体薄膜の製造方法。
- 前記温度領域は、660℃以上840℃以下であることを特徴とする請求項4又は請求項5に記載の多結晶酸化物半導体薄膜の製造方法。
- 前記焼成は酸素雰囲気中で行われることを特徴とする請求項4〜請求項6のいずれか1項に記載の多結晶酸化物半導体薄膜の製造方法。
- InとGaとZnからなる群のうち少なくとも1つの元素を含有する非晶質酸化物半導体からなる層を、その表面粗さRa値を1.5nm以下として維持しつつ多結晶化する温度領域で焼成して活性層とする工程を含むことを特徴とする薄膜トランジスタの製造方法。
- 前記活性層はIn−Ga−Zn−O系の透明酸化物を含有することを特徴とする請求項8に記載の薄膜トランジスタの製造方法。
- 前記温度領域は、660℃以上840℃以下であることを特徴とする請求項8又は請求項9に記載の薄膜トランジスタの製造方法。
- 前記焼成は酸素を含む雰囲気中で行われることを特徴とする請求項8〜請求項10のいずれか1項に記載の薄膜トランジスタの製造方法。
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US9391096B2 (en) | 2013-01-18 | 2016-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9401714B2 (en) | 2012-10-17 | 2016-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Programmable logic device |
US9406810B2 (en) | 2012-12-03 | 2016-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9412876B2 (en) | 2014-02-07 | 2016-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9412877B2 (en) | 2013-02-12 | 2016-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9437743B2 (en) | 2010-10-07 | 2016-09-06 | Semiconductor Energy Laboratory Co., Ltd. | Thin film element, semiconductor device, and method for manufacturing the same |
US9490351B2 (en) | 2011-03-25 | 2016-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing semiconductor device |
JP2016192569A (ja) * | 2010-09-10 | 2016-11-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9496412B2 (en) | 2014-07-15 | 2016-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and display device including the semiconductor device |
US9496408B2 (en) | 2012-05-31 | 2016-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide semiconductor stack with different ratio of indium and gallium |
US9508856B2 (en) | 2012-10-19 | 2016-11-29 | Kobe Steel, Ltd. | Thin film transistor |
US9520411B2 (en) | 2009-11-13 | 2016-12-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device including the same |
US9559208B2 (en) | 2009-10-21 | 2017-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device including the same |
JPWO2015025499A1 (ja) * | 2013-08-19 | 2017-03-02 | 出光興産株式会社 | 酸化物半導体基板及びショットキーバリアダイオード |
JPWO2015025500A1 (ja) * | 2013-08-19 | 2017-03-02 | 出光興産株式会社 | 酸化物半導体基板及びショットキーバリアダイオード |
US9595435B2 (en) | 2012-10-19 | 2017-03-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming multilayer film including oxide semiconductor film and method for manufacturing semiconductor device |
US9601178B2 (en) | 2011-01-26 | 2017-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device |
US9627545B2 (en) | 2013-04-12 | 2017-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9660093B2 (en) | 2012-10-17 | 2017-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Transistor with multilayer film including oxide semiconductor layer and oxide layer |
US9673336B2 (en) | 2011-01-12 | 2017-06-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US9680028B2 (en) | 2011-10-14 | 2017-06-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9734780B2 (en) | 2010-07-01 | 2017-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of liquid crystal display device |
US9773787B2 (en) | 2015-11-03 | 2017-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, memory device, electronic device, or method for driving the semiconductor device |
US9812585B2 (en) | 2013-10-04 | 2017-11-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9829533B2 (en) | 2013-03-06 | 2017-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor film and semiconductor device |
US9837551B2 (en) | 2013-05-02 | 2017-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9859117B2 (en) | 2014-10-28 | 2018-01-02 | Semiconductor Energy Laboratory Co., Ltd. | Oxide and method for forming the same |
US9865743B2 (en) | 2012-10-24 | 2018-01-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide layer surrounding oxide semiconductor layer |
US9865696B2 (en) | 2010-12-17 | 2018-01-09 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering target, method for manufacturing the same, and method for manufacturing semiconductor device |
US9876119B2 (en) | 2011-10-05 | 2018-01-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9885108B2 (en) | 2012-08-07 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming sputtering target |
US9929276B2 (en) | 2012-08-10 | 2018-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9935202B2 (en) | 2009-09-16 | 2018-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and display device comprising oxide semiconductor layer |
US10014414B2 (en) | 2013-02-28 | 2018-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US10061172B2 (en) | 2009-10-16 | 2018-08-28 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic apparatus having the same |
US10217736B2 (en) | 2013-09-23 | 2019-02-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including transistor and capacitor |
US10236287B2 (en) | 2013-09-23 | 2019-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including semiconductor electrically surrounded by electric field of conductive film |
US10490553B2 (en) | 2009-10-29 | 2019-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10559249B2 (en) | 2015-12-28 | 2020-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Device, television system, and electronic device |
US10557192B2 (en) | 2012-08-07 | 2020-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for using sputtering target and method for forming oxide film |
US10872982B2 (en) | 2012-02-28 | 2020-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP2021077918A (ja) * | 2010-12-28 | 2021-05-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US11049977B2 (en) | 2010-12-17 | 2021-06-29 | Semiconductor Energy Laboratory Co., Ltd. | Oxide material and semiconductor device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6281146B2 (ja) | 2014-07-22 | 2018-02-21 | 株式会社Flosfia | 結晶性半導体膜および板状体ならびに半導体装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006502597A (ja) * | 2002-05-21 | 2006-01-19 | ザ・ステート・オブ・オレゴン・アクティング・バイ・アンド・スルー・ザ・ステート・ボード・オブ・ハイヤー・エデュケーション・オン・ビハーフ・オブ・オレゴン・ステート・ユニバーシティ | トランジスタ構造及びその製作方法 |
JP2007201366A (ja) * | 2006-01-30 | 2007-08-09 | Canon Inc | 電界効果型トランジスタ |
JP2008130814A (ja) * | 2006-11-21 | 2008-06-05 | Canon Inc | 薄膜トランジスタの製造方法 |
WO2008096768A1 (ja) * | 2007-02-09 | 2008-08-14 | Idemitsu Kosan Co., Ltd. | 薄膜トランジスタの製造方法、薄膜トランジスタ、薄膜トランジスタ基板及び画像表示装置と、画像表示装置と、半導体デバイス |
WO2008114588A1 (ja) * | 2007-03-20 | 2008-09-25 | Idemitsu Kosan Co., Ltd. | スパッタリングターゲット、酸化物半導体膜及び半導体デバイス |
WO2008126492A1 (ja) * | 2007-04-05 | 2008-10-23 | Idemitsu Kosan Co., Ltd. | 電界効果型トランジスタ及び電界効果型トランジスタの製造方法 |
JP2008311342A (ja) * | 2007-06-13 | 2008-12-25 | Idemitsu Kosan Co Ltd | 結晶酸化物半導体、及びそれを用いてなる薄膜トランジスタ |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4170454B2 (ja) * | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP5006598B2 (ja) * | 2005-09-16 | 2012-08-22 | キヤノン株式会社 | 電界効果型トランジスタ |
WO2008117739A1 (ja) * | 2007-03-23 | 2008-10-02 | Idemitsu Kosan Co., Ltd. | 半導体デバイス、多結晶半導体薄膜、多結晶半導体薄膜の製造方法、電界効果型トランジスタ、及び、電界効果型トランジスタの製造方法 |
-
2009
- 2009-01-29 JP JP2009018128A patent/JP5606682B2/ja active Active
-
2010
- 2010-01-22 KR KR1020100006111A patent/KR101540127B1/ko active IP Right Grant
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006502597A (ja) * | 2002-05-21 | 2006-01-19 | ザ・ステート・オブ・オレゴン・アクティング・バイ・アンド・スルー・ザ・ステート・ボード・オブ・ハイヤー・エデュケーション・オン・ビハーフ・オブ・オレゴン・ステート・ユニバーシティ | トランジスタ構造及びその製作方法 |
JP2007201366A (ja) * | 2006-01-30 | 2007-08-09 | Canon Inc | 電界効果型トランジスタ |
JP2008130814A (ja) * | 2006-11-21 | 2008-06-05 | Canon Inc | 薄膜トランジスタの製造方法 |
WO2008096768A1 (ja) * | 2007-02-09 | 2008-08-14 | Idemitsu Kosan Co., Ltd. | 薄膜トランジスタの製造方法、薄膜トランジスタ、薄膜トランジスタ基板及び画像表示装置と、画像表示装置と、半導体デバイス |
WO2008114588A1 (ja) * | 2007-03-20 | 2008-09-25 | Idemitsu Kosan Co., Ltd. | スパッタリングターゲット、酸化物半導体膜及び半導体デバイス |
WO2008126492A1 (ja) * | 2007-04-05 | 2008-10-23 | Idemitsu Kosan Co., Ltd. | 電界効果型トランジスタ及び電界効果型トランジスタの製造方法 |
JP2008311342A (ja) * | 2007-06-13 | 2008-12-25 | Idemitsu Kosan Co Ltd | 結晶酸化物半導体、及びそれを用いてなる薄膜トランジスタ |
Cited By (368)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6183684A (ja) * | 1984-09-28 | 1986-04-28 | 株式会社日立製作所 | セラミツクスの接合方法 |
US11309430B2 (en) | 2009-03-06 | 2022-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US10700213B2 (en) | 2009-03-06 | 2020-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8872175B2 (en) | 2009-03-06 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8492757B2 (en) | 2009-03-06 | 2013-07-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US10236391B2 (en) | 2009-03-06 | 2019-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9324878B2 (en) | 2009-03-06 | 2016-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9496414B2 (en) | 2009-03-06 | 2016-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8916870B2 (en) | 2009-03-06 | 2014-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US11715801B2 (en) | 2009-03-06 | 2023-08-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9991396B2 (en) | 2009-03-06 | 2018-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9935202B2 (en) | 2009-09-16 | 2018-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and display device comprising oxide semiconductor layer |
US8492758B2 (en) | 2009-09-24 | 2013-07-23 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and semiconductor device |
US9214563B2 (en) | 2009-09-24 | 2015-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and semiconductor device |
US9853167B2 (en) | 2009-09-24 | 2017-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and semiconductor device |
US10418491B2 (en) | 2009-09-24 | 2019-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and semiconductor device |
US9318617B2 (en) | 2009-09-24 | 2016-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
US10061172B2 (en) | 2009-10-16 | 2018-08-28 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic apparatus having the same |
US10310348B2 (en) | 2009-10-16 | 2019-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic apparatus having the same |
US10714622B2 (en) | 2009-10-21 | 2020-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device including the same |
US9559208B2 (en) | 2009-10-21 | 2017-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device including the same |
US10490553B2 (en) | 2009-10-29 | 2019-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8570070B2 (en) | 2009-10-30 | 2013-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit and semiconductor device |
US9722086B2 (en) | 2009-10-30 | 2017-08-01 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit and semiconductor device |
US9853066B2 (en) | 2009-11-06 | 2017-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20210288079A1 (en) | 2009-11-06 | 2021-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9093328B2 (en) | 2009-11-06 | 2015-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an oxide semiconductor with a crystalline region and manufacturing method thereof |
US10868046B2 (en) | 2009-11-06 | 2020-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device applying an oxide semiconductor |
US10079251B2 (en) | 2009-11-06 | 2018-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US11710745B2 (en) | 2009-11-06 | 2023-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US11315954B2 (en) | 2009-11-06 | 2022-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US11961842B2 (en) | 2009-11-06 | 2024-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
US10249647B2 (en) | 2009-11-06 | 2019-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device comprising oxide semiconductor layer |
US9093544B2 (en) | 2009-11-06 | 2015-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US11107838B2 (en) | 2009-11-06 | 2021-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Transistor comprising an oxide semiconductor |
US11107840B2 (en) | 2009-11-06 | 2021-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating a semiconductor device comprising an oxide semiconductor |
US11776968B2 (en) | 2009-11-06 | 2023-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising oxide semiconductor layer |
US9520411B2 (en) | 2009-11-13 | 2016-12-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device including the same |
US10332912B2 (en) | 2009-11-13 | 2019-06-25 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device including the same |
US10079310B2 (en) | 2009-11-28 | 2018-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including stacked oxide semiconductor material |
US10347771B2 (en) | 2009-11-28 | 2019-07-09 | Semiconductor Energy Laboratory Co., Ltd. | Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device |
US11710795B2 (en) | 2009-11-28 | 2023-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising oxide semiconductor with c-axis-aligned crystals |
US10608118B2 (en) | 2009-11-28 | 2020-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9520287B2 (en) | 2009-11-28 | 2016-12-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having stacked oxide semiconductor layers |
US9214520B2 (en) | 2009-11-28 | 2015-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10263120B2 (en) | 2009-11-28 | 2019-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device and method for manufacturing liquid crystal display panel |
US11133419B2 (en) | 2009-11-28 | 2021-09-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8779420B2 (en) | 2009-11-28 | 2014-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8765522B2 (en) | 2009-11-28 | 2014-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device |
US9887298B2 (en) | 2009-11-28 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
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US8748881B2 (en) | 2009-11-28 | 2014-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11342464B2 (en) | 2009-12-04 | 2022-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising first and second insulating layer each has a tapered shape |
US9324881B2 (en) | 2009-12-04 | 2016-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
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US10714358B2 (en) | 2009-12-04 | 2020-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8866138B2 (en) | 2009-12-04 | 2014-10-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device including the same |
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US9721971B2 (en) | 2009-12-04 | 2017-08-01 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device including the same |
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US9721811B2 (en) | 2009-12-04 | 2017-08-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device having an oxide semiconductor layer |
US11728437B2 (en) | 2009-12-04 | 2023-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising oxide semiconductor layer containing a c-axis aligned crystal |
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US10490420B2 (en) | 2009-12-04 | 2019-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US11728349B2 (en) | 2009-12-04 | 2023-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device including the same |
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US9040989B2 (en) | 2009-12-08 | 2015-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8558233B2 (en) | 2009-12-08 | 2013-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8530285B2 (en) | 2009-12-28 | 2013-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8686425B2 (en) | 2009-12-28 | 2014-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US9054134B2 (en) | 2009-12-28 | 2015-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US9859401B2 (en) | 2009-12-28 | 2018-01-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US10141425B2 (en) | 2009-12-28 | 2018-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US9136280B2 (en) | 2010-01-15 | 2015-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
US8780629B2 (en) | 2010-01-15 | 2014-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
US9117732B2 (en) | 2010-01-24 | 2015-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
US11935896B2 (en) | 2010-01-24 | 2024-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
US8866984B2 (en) | 2010-01-24 | 2014-10-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
US11362112B2 (en) | 2010-01-24 | 2022-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
US9202923B2 (en) | 2010-02-05 | 2015-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide semiconductor |
US9991288B2 (en) | 2010-02-05 | 2018-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9728555B2 (en) | 2010-02-05 | 2017-08-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US11749686B2 (en) | 2010-02-05 | 2023-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US10615179B2 (en) | 2010-02-05 | 2020-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US11101295B2 (en) | 2010-02-05 | 2021-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8674354B2 (en) | 2010-02-05 | 2014-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device with an oxide semiconductor including a crystal region |
US8878180B2 (en) | 2010-02-05 | 2014-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US11469255B2 (en) | 2010-02-05 | 2022-10-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8586905B2 (en) | 2010-02-12 | 2013-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
US9024248B2 (en) | 2010-02-12 | 2015-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device to include a first transistor with a silicon channel formation region and a second transistor with an oxide semiconductor channel formation region |
US10535689B2 (en) | 2010-02-12 | 2020-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
US10916573B2 (en) | 2010-02-12 | 2021-02-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
US8461007B2 (en) | 2010-04-23 | 2013-06-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US9202877B2 (en) | 2010-04-23 | 2015-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US9812533B2 (en) | 2010-04-23 | 2017-11-07 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8546225B2 (en) | 2010-04-23 | 2013-10-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US9142648B2 (en) | 2010-05-21 | 2015-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8629438B2 (en) | 2010-05-21 | 2014-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9601602B2 (en) | 2010-05-21 | 2017-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8710762B2 (en) | 2010-06-10 | 2014-04-29 | Semiconductor Energy Laboratory Co., Ltd. | DC/DC converter, power supply circuit, and semiconductor device |
US9543835B2 (en) | 2010-06-10 | 2017-01-10 | Semiconductor Energy Laboratory Co., Ltd. | DC/DC converter, power supply circuit, and semiconductor device |
US9734780B2 (en) | 2010-07-01 | 2017-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of liquid crystal display device |
US10008169B2 (en) | 2010-07-01 | 2018-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of liquid crystal display device |
US8890859B2 (en) | 2010-08-06 | 2014-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and driving method of the same |
US8692823B2 (en) | 2010-08-06 | 2014-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and driving method of the same |
US9058047B2 (en) | 2010-08-26 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8628987B2 (en) | 2010-08-27 | 2014-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing methods of thin film transistor, liquid crystal display device, and semiconductor device |
US8835214B2 (en) | 2010-09-03 | 2014-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering target and method for manufacturing semiconductor device |
US9410239B2 (en) | 2010-09-03 | 2016-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering target and method for manufacturing semiconductor device |
US8980686B2 (en) | 2010-09-03 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering target and method for manufacturing semiconductor device |
JP2016192569A (ja) * | 2010-09-10 | 2016-11-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US11189642B2 (en) | 2010-09-10 | 2021-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and light-emitting device |
US11417688B2 (en) | 2010-09-13 | 2022-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
US10910499B2 (en) | 2010-09-13 | 2021-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, power diode, and rectifier |
US9105668B2 (en) | 2010-09-13 | 2015-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8912544B2 (en) | 2010-09-13 | 2014-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting display device and method for manufacturing the same |
JP2017059842A (ja) * | 2010-09-13 | 2017-03-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9117919B2 (en) | 2010-09-13 | 2015-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8871565B2 (en) | 2010-09-13 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8558960B2 (en) | 2010-09-13 | 2013-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
US11715800B2 (en) | 2010-09-13 | 2023-08-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, power diode, and rectifier |
US8647919B2 (en) | 2010-09-13 | 2014-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting display device and method for manufacturing the same |
WO2012036104A1 (en) * | 2010-09-13 | 2012-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US9305944B2 (en) | 2010-09-13 | 2016-04-05 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
US11682678B2 (en) | 2010-09-13 | 2023-06-20 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
US9324877B2 (en) | 2010-09-13 | 2016-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, power diode, and rectifier |
US10615283B2 (en) | 2010-09-13 | 2020-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, power diode, and rectifier |
US9685562B2 (en) | 2010-09-13 | 2017-06-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, power diode, and rectifier |
US10522572B2 (en) | 2010-09-13 | 2019-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
US9917112B2 (en) | 2010-09-13 | 2018-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
US8901552B2 (en) | 2010-09-13 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Top gate thin film transistor with multiple oxide semiconductor layers |
US11024655B2 (en) | 2010-09-13 | 2021-06-01 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
US8835917B2 (en) | 2010-09-13 | 2014-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, power diode, and rectifier |
US10586869B2 (en) | 2010-09-13 | 2020-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US9343584B2 (en) | 2010-09-13 | 2016-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9437743B2 (en) | 2010-10-07 | 2016-09-06 | Semiconductor Energy Laboratory Co., Ltd. | Thin film element, semiconductor device, and method for manufacturing the same |
US9917197B2 (en) | 2010-10-07 | 2018-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Thin film element, semiconductor device, and method for manufacturing the same |
US8936965B2 (en) | 2010-11-26 | 2015-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8809852B2 (en) | 2010-11-30 | 2014-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same |
JP2016105494A (ja) * | 2010-11-30 | 2016-06-09 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US8728883B2 (en) | 2010-11-30 | 2014-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US9634082B2 (en) | 2010-11-30 | 2017-04-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US9281358B2 (en) | 2010-11-30 | 2016-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US8669556B2 (en) | 2010-12-03 | 2014-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9711655B2 (en) | 2010-12-03 | 2017-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and semiconductor device |
US8680522B2 (en) | 2010-12-03 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and semiconductor device |
US9331208B2 (en) | 2010-12-03 | 2016-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and semiconductor device |
US10916663B2 (en) | 2010-12-03 | 2021-02-09 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and semiconductor device |
US10103277B2 (en) | 2010-12-03 | 2018-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing oxide semiconductor film |
US8994021B2 (en) | 2010-12-03 | 2015-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and semiconductor device |
US11049977B2 (en) | 2010-12-17 | 2021-06-29 | Semiconductor Energy Laboratory Co., Ltd. | Oxide material and semiconductor device |
US9865696B2 (en) | 2010-12-17 | 2018-01-09 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering target, method for manufacturing the same, and method for manufacturing semiconductor device |
US11217702B2 (en) | 2010-12-17 | 2022-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Oxide material and semiconductor device |
US11688810B2 (en) | 2010-12-17 | 2023-06-27 | Semiconductor Energy Laboratory Co., Ltd. | Oxide material and semiconductor device |
US9735179B2 (en) | 2010-12-24 | 2017-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device |
US9024317B2 (en) | 2010-12-24 | 2015-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device |
JP7174090B2 (ja) | 2010-12-28 | 2022-11-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2021077918A (ja) * | 2010-12-28 | 2021-05-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9673336B2 (en) | 2011-01-12 | 2017-06-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US9570484B2 (en) | 2011-01-12 | 2017-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8921948B2 (en) | 2011-01-12 | 2014-12-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9166026B2 (en) | 2011-01-12 | 2015-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US8536571B2 (en) | 2011-01-12 | 2013-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US10170633B2 (en) | 2011-01-12 | 2019-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US9362116B2 (en) | 2011-01-18 | 2016-06-07 | Indystry-Academic Cooperation Foundation, Yonsei University | Methods of forming oxide thin film and electrical devices and thin film transistors using the methods |
US8916867B2 (en) | 2011-01-20 | 2014-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor element and semiconductor device |
US9917206B2 (en) | 2011-01-20 | 2018-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor element and semiconductor device |
US9337347B2 (en) | 2011-01-20 | 2016-05-10 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor element and semiconductor device |
JP2016136629A (ja) * | 2011-01-20 | 2016-07-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US9601178B2 (en) | 2011-01-26 | 2017-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device |
US8987727B2 (en) | 2011-01-28 | 2015-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device and semiconductor device |
US9299815B2 (en) | 2011-01-28 | 2016-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device and semiconductor device |
JP2014132699A (ja) * | 2011-03-25 | 2014-07-17 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US9490351B2 (en) | 2011-03-25 | 2016-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing semiconductor device |
US9287408B2 (en) | 2011-03-25 | 2016-03-15 | Semiconductor Energy Laboratory Co., Ltd. | Field-effect transistor, and memory and semiconductor circuit including the same |
US9859443B2 (en) | 2011-03-25 | 2018-01-02 | Semiconductor Energy Laboratory Co., Ltd. | Field-effect transistor, and memory and semiconductor circuit including the same |
US9548395B2 (en) | 2011-03-25 | 2017-01-17 | Semiconductor Energy Laboratory Co., Ltd. | Field-effect transistor including oxide semiconductor, and memory and semiconductor circuit including the same |
US8916868B2 (en) | 2011-04-22 | 2014-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US9559193B2 (en) | 2011-04-22 | 2017-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US8809854B2 (en) | 2011-04-22 | 2014-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10388799B2 (en) | 2011-04-22 | 2019-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor Device |
US9660095B2 (en) | 2011-04-22 | 2017-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8709922B2 (en) | 2011-05-06 | 2014-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8581625B2 (en) | 2011-05-19 | 2013-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Programmable logic device |
US9595964B2 (en) | 2011-05-19 | 2017-03-14 | Semiconductor Energy Laboratory Co., Ltd. | Programmable logic device |
US9900007B2 (en) | 2011-05-19 | 2018-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Programmable logic device |
US8848449B2 (en) | 2011-05-20 | 2014-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and method for driving memory device |
US10889888B2 (en) | 2011-06-08 | 2021-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering target, method for manufacturing sputtering target, and method for forming thin film |
US8889477B2 (en) | 2011-06-08 | 2014-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming thin film utilizing sputtering target |
US11066739B2 (en) | 2011-06-08 | 2021-07-20 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering target, method for manufacturing sputtering target, and method for forming thin film |
US9382611B2 (en) | 2011-06-08 | 2016-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering target, method for manufacturing sputtering target, and method for forming thin film |
US11959165B2 (en) | 2011-06-08 | 2024-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising oxide semiconductor film |
US9601636B2 (en) | 2011-06-17 | 2017-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9166055B2 (en) | 2011-06-17 | 2015-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9287409B2 (en) | 2011-06-17 | 2016-03-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8890152B2 (en) | 2011-06-17 | 2014-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
WO2013039126A1 (en) * | 2011-09-16 | 2013-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8835918B2 (en) | 2011-09-16 | 2014-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9105732B2 (en) | 2011-09-16 | 2015-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11217701B2 (en) | 2011-09-29 | 2022-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10622485B2 (en) | 2011-09-29 | 2020-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10290744B2 (en) | 2011-09-29 | 2019-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11791415B2 (en) | 2011-09-29 | 2023-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9029852B2 (en) | 2011-09-29 | 2015-05-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9741860B2 (en) | 2011-09-29 | 2017-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9876119B2 (en) | 2011-10-05 | 2018-01-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9218966B2 (en) | 2011-10-14 | 2015-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing semiconductor device |
US9680028B2 (en) | 2011-10-14 | 2017-06-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8952380B2 (en) | 2011-10-27 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
US8698214B2 (en) | 2011-10-27 | 2014-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9105734B2 (en) | 2011-10-27 | 2015-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9530895B2 (en) | 2011-10-27 | 2016-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9076505B2 (en) | 2011-12-09 | 2015-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Memory device |
US8796683B2 (en) | 2011-12-23 | 2014-08-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9559213B2 (en) | 2011-12-23 | 2017-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9166061B2 (en) | 2011-12-23 | 2015-10-20 | Semiconcductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9293589B2 (en) | 2012-01-25 | 2016-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US10243081B2 (en) | 2012-01-25 | 2019-03-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US9214566B2 (en) | 2012-02-02 | 2015-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8723176B2 (en) | 2012-02-02 | 2014-05-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9812582B2 (en) | 2012-02-02 | 2017-11-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8946704B2 (en) | 2012-02-02 | 2015-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10872982B2 (en) | 2012-02-28 | 2020-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US10559699B2 (en) | 2012-04-13 | 2020-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8946702B2 (en) | 2012-04-13 | 2015-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11929437B2 (en) | 2012-04-13 | 2024-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising various thin-film transistors |
US10872981B2 (en) | 2012-04-13 | 2020-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising an oxide semiconductor |
US11355645B2 (en) | 2012-04-13 | 2022-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising stacked oxide semiconductor layers |
US10158026B2 (en) | 2012-04-13 | 2018-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide semiconductor stacked layers |
US9472679B2 (en) | 2012-04-13 | 2016-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9362411B2 (en) | 2012-04-16 | 2016-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9219164B2 (en) | 2012-04-20 | 2015-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with oxide semiconductor channel |
US8860022B2 (en) | 2012-04-27 | 2014-10-14 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and semiconductor device |
US11837666B2 (en) | 2012-04-30 | 2023-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9048323B2 (en) | 2012-04-30 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9660097B2 (en) | 2012-04-30 | 2017-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US20170323974A1 (en) | 2012-04-30 | 2017-11-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10403762B2 (en) | 2012-04-30 | 2019-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11217699B2 (en) | 2012-04-30 | 2022-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10134909B2 (en) | 2012-05-31 | 2018-11-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9799290B2 (en) | 2012-05-31 | 2017-10-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9496408B2 (en) | 2012-05-31 | 2016-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide semiconductor stack with different ratio of indium and gallium |
US8987731B2 (en) | 2012-05-31 | 2015-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9899536B2 (en) | 2012-05-31 | 2018-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming semiconductor device with different energy gap oxide semiconductor stacked layers |
US8785928B2 (en) | 2012-05-31 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9276091B2 (en) | 2012-05-31 | 2016-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9224758B2 (en) | 2012-05-31 | 2015-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9741865B2 (en) | 2012-05-31 | 2017-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming semiconductor device including oxide semiconductor stack with different ratio of indium and gallium |
US9048265B2 (en) | 2012-05-31 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device comprising oxide semiconductor layer |
US11424368B2 (en) | 2012-06-15 | 2022-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including an oxide semiconductor |
US10741695B2 (en) | 2012-06-15 | 2020-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including an oxide semiconductor |
US10483404B2 (en) | 2012-06-15 | 2019-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with multiple oxide semiconductor layers |
US9847430B2 (en) | 2012-06-15 | 2017-12-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9490369B2 (en) | 2012-06-15 | 2016-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8901557B2 (en) | 2012-06-15 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9437747B2 (en) | 2012-06-15 | 2016-09-06 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with multiple oxide semiconductor layers |
US10032926B2 (en) | 2012-06-15 | 2018-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including an oxide semiconductor |
US10483406B2 (en) | 2012-06-15 | 2019-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including an oxide semiconductor |
US9153699B2 (en) | 2012-06-15 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with multiple oxide semiconductor layers |
US9059219B2 (en) | 2012-06-27 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US8952381B2 (en) | 2012-06-29 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10424673B2 (en) | 2012-06-29 | 2019-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including a stack of oxide semiconductor layers |
US9666721B2 (en) | 2012-06-29 | 2017-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including pellet-like particle or flat-plate-like particle |
US10032934B2 (en) | 2012-08-02 | 2018-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9209256B2 (en) | 2012-08-02 | 2015-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9583634B2 (en) | 2012-08-02 | 2017-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9761738B2 (en) | 2012-08-02 | 2017-09-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having first and second oxide semiconductors with difference energy level |
US8890159B2 (en) | 2012-08-03 | 2014-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor stacked film and semiconductor device |
US9123573B2 (en) | 2012-08-03 | 2015-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor stacked film and semiconductor device |
US9583570B2 (en) | 2012-08-03 | 2017-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor stacked film and semiconductor device |
US9885108B2 (en) | 2012-08-07 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming sputtering target |
US10557192B2 (en) | 2012-08-07 | 2020-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for using sputtering target and method for forming oxide film |
US9082863B2 (en) | 2012-08-10 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9929276B2 (en) | 2012-08-10 | 2018-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9437749B2 (en) | 2012-08-10 | 2016-09-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for fabricating the same |
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US9269821B2 (en) | 2012-09-24 | 2016-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
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US10121903B2 (en) | 2012-11-30 | 2018-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9583601B2 (en) | 2012-11-30 | 2017-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US9570625B2 (en) | 2012-12-03 | 2017-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9293540B2 (en) | 2012-12-03 | 2016-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9406810B2 (en) | 2012-12-03 | 2016-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10269835B2 (en) | 2012-12-03 | 2019-04-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9293541B2 (en) | 2012-12-28 | 2016-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9343578B2 (en) | 2012-12-28 | 2016-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and measurement device |
US9748328B2 (en) | 2012-12-28 | 2017-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film |
US10374030B2 (en) | 2012-12-28 | 2019-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Metal oxide semiconductor device |
US9064966B2 (en) | 2012-12-28 | 2015-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with oxide semiconductor |
US9391096B2 (en) | 2013-01-18 | 2016-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9412877B2 (en) | 2013-02-12 | 2016-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9231111B2 (en) | 2013-02-13 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9293544B2 (en) | 2013-02-26 | 2016-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having buried channel structure |
US9768320B2 (en) | 2013-02-27 | 2017-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9373711B2 (en) | 2013-02-27 | 2016-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10014414B2 (en) | 2013-02-28 | 2018-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US10522347B2 (en) | 2013-02-28 | 2019-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing sputtering target, method for forming oxide film, and transistor |
US9267199B2 (en) | 2013-02-28 | 2016-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing sputtering target, method for forming oxide film, and transistor |
US11139166B2 (en) | 2013-02-28 | 2021-10-05 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing sputtering target, method for forming oxide film, and transistor |
US11967505B2 (en) | 2013-02-28 | 2024-04-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing sputtering target, method for forming oxide film, and transistor |
US11637015B2 (en) | 2013-02-28 | 2023-04-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing sputtering target, method for forming oxide film, and transistor |
US9276125B2 (en) | 2013-03-01 | 2016-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9829533B2 (en) | 2013-03-06 | 2017-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor film and semiconductor device |
US9627545B2 (en) | 2013-04-12 | 2017-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9837551B2 (en) | 2013-05-02 | 2017-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9905695B2 (en) | 2013-05-09 | 2018-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Multi-layered oxide semiconductor transistor |
US9337344B2 (en) | 2013-05-09 | 2016-05-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10128384B2 (en) | 2013-05-20 | 2018-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10411136B2 (en) | 2013-05-20 | 2019-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11217704B2 (en) | 2013-05-20 | 2022-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11646380B2 (en) | 2013-05-20 | 2023-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9281408B2 (en) | 2013-05-20 | 2016-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11949021B2 (en) | 2013-05-20 | 2024-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
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US9837552B2 (en) | 2013-05-20 | 2017-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9431547B2 (en) | 2013-05-20 | 2016-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JPWO2015025500A1 (ja) * | 2013-08-19 | 2017-03-02 | 出光興産株式会社 | 酸化物半導体基板及びショットキーバリアダイオード |
JPWO2015025499A1 (ja) * | 2013-08-19 | 2017-03-02 | 出光興産株式会社 | 酸化物半導体基板及びショットキーバリアダイオード |
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US10559249B2 (en) | 2015-12-28 | 2020-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Device, television system, and electronic device |
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