JP2010171206A - 加熱処理装置 - Google Patents
加熱処理装置 Download PDFInfo
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- JP2010171206A JP2010171206A JP2009012401A JP2009012401A JP2010171206A JP 2010171206 A JP2010171206 A JP 2010171206A JP 2009012401 A JP2009012401 A JP 2009012401A JP 2009012401 A JP2009012401 A JP 2009012401A JP 2010171206 A JP2010171206 A JP 2010171206A
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- 238000010438 heat treatment Methods 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 230000005855 radiation Effects 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 238000007789 sealing Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000009434 installation Methods 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 238000007872 degassing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Furnace Details (AREA)
- Muffle Furnaces And Rotary Kilns (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
【解決手段】貫通穴24を有する複数のチャンバ部材25からなり、隣接するチャンバ部材25の少なくとも一方に、他方との当接面の貫通穴24の開口部の周囲に亘って連続して溝部が設けられ、各チャンバ部材25が、溝部に装着されたシール部材26を介してそれぞれ密接した状態で固定されて、複数の貫通穴24で構成される処理空間Aを有するチャンバ本体21と、処理空間Aを塞ぐ壁面部材22及び蓋部材23とを具備する真空チャンバ20と、処理空間A内に配されて基板Aを支持する支持部材30と、基板Sを放射熱によって加熱する加熱手段40とを具備する構成とする。
【選択図】図1
Description
20 真空チャンバ
21 チャンバ本体
22 壁面部材
23 蓋部材
24 貫通穴
25 チャンバ部材
26 シール部材
27 溝部
28 隔壁部
30 支持部材
31 ベース部材
32 基板支持ピン
33 分割ベース部材
34 ヒンジ部
35 軸
40 加熱手段
41 被覆膜
A 処理空間
S 基板
Claims (7)
- 基板を挿入可能に形成された貫通穴を有するブロック状の複数のチャンバ部材からなり、隣接するチャンバ部材の少なくとも一方に、他方との当接面の前記貫通穴の開口部の周囲に亘って連続して溝部が設けられ、各チャンバ部材が、前記溝部に装着されたシール部材を介してそれぞれ密接した状態で固定されて、複数の貫通穴で構成される処理空間を有するチャンバ本体と、前記処理空間の一方の開口を密封する壁面部材と、前記処理空間の他方の開口を開閉可能に塞ぐ蓋部材とを具備する真空チャンバと、
前記処理空間内に配されて前記基板を支持する支持部材と、
該支持部材に支持された前記基板に相対向して設けられて当該基板を放射熱によって加熱する加熱手段と、
を有することを特徴とする加熱処理装置。 - 前記チャンバ部材のそれぞれには、その高さ方向に沿って前記貫通穴が所定間隔で複数設けられていることを特徴とする請求項1に記載の加熱処理装置。
- 前記加熱手段の表面に放射効率を高める材料を含む被覆膜が形成されていることを特徴とする請求項1又は2に記載の加熱処理装置。
- 前記加熱手段上に放射効率を高める材料で形成された被覆板が設けられていることを特徴とする請求項1〜3の何れか一項に記載の加熱処理装置。
- 前記加熱手段が、加熱源としてのシースヒータを有することを特徴とする請求項1〜4の何れか一項に記載の加熱処理装置。
- 前記支持部材は、前記チャンバ部材に棒状のベース部材と該ベース部材上に立設された複数の基板支持ピンとで構成されていることを特徴とする請求項1〜5の何れか一項に記載の加熱処理装置。
- 前記ベース部材は、その軸方向の複数箇所に屈曲可能なヒンジ部を有することを特徴とする請求項6に記載の加熱処理装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009012401A JP5274275B2 (ja) | 2009-01-22 | 2009-01-22 | 加熱処理装置 |
TW098109525A TWI452251B (zh) | 2009-01-22 | 2009-03-24 | Heat treatment device |
KR1020090026382A KR101591088B1 (ko) | 2009-01-22 | 2009-03-27 | 가열 처리 장치 |
CN200910129865.7A CN101789358B (zh) | 2009-01-22 | 2009-03-30 | 加热处理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009012401A JP5274275B2 (ja) | 2009-01-22 | 2009-01-22 | 加熱処理装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010171206A true JP2010171206A (ja) | 2010-08-05 |
JP2010171206A5 JP2010171206A5 (ja) | 2012-02-16 |
JP5274275B2 JP5274275B2 (ja) | 2013-08-28 |
Family
ID=42532520
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009012401A Active JP5274275B2 (ja) | 2009-01-22 | 2009-01-22 | 加熱処理装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5274275B2 (ja) |
KR (1) | KR101591088B1 (ja) |
CN (1) | CN101789358B (ja) |
TW (1) | TWI452251B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7272639B1 (en) | 1995-06-07 | 2007-09-18 | Soverain Software Llc | Internet server access control and monitoring systems |
US9900305B2 (en) | 1998-01-12 | 2018-02-20 | Soverain Ip, Llc | Internet server access control and monitoring systems |
US7257132B1 (en) | 1998-02-26 | 2007-08-14 | Hitachi, Ltd. | Receiver set, information apparatus and receiving system |
CN104197668B (zh) * | 2014-09-24 | 2016-03-02 | 南京耀天干燥设备有限公司 | 一种改进的低温真空干燥箱 |
JP7406749B2 (ja) * | 2019-06-28 | 2023-12-28 | 日新イオン機器株式会社 | 加熱装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0769391A (ja) * | 1993-01-19 | 1995-03-14 | Gold Kogyo Kk | 精密部品搬送用トレー |
JP2000114151A (ja) * | 1998-10-08 | 2000-04-21 | Hitachi Ltd | 基板加熱装置 |
JP2008124366A (ja) * | 2006-11-15 | 2008-05-29 | Tokyo Electron Ltd | 減圧乾燥装置 |
JP2008197374A (ja) * | 2007-02-13 | 2008-08-28 | Ulvac Japan Ltd | 真空チャンバ、ロードロックチャンバ、及び処理装置 |
JP2008311250A (ja) * | 2007-06-12 | 2008-12-25 | Tokyo Electron Ltd | リフローシステムおよびリフロー方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100837599B1 (ko) * | 2007-03-27 | 2008-06-13 | 주식회사 에스에프에이 | 기판 지지용 스테이지 |
-
2009
- 2009-01-22 JP JP2009012401A patent/JP5274275B2/ja active Active
- 2009-03-24 TW TW098109525A patent/TWI452251B/zh active
- 2009-03-27 KR KR1020090026382A patent/KR101591088B1/ko active IP Right Grant
- 2009-03-30 CN CN200910129865.7A patent/CN101789358B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0769391A (ja) * | 1993-01-19 | 1995-03-14 | Gold Kogyo Kk | 精密部品搬送用トレー |
JP2000114151A (ja) * | 1998-10-08 | 2000-04-21 | Hitachi Ltd | 基板加熱装置 |
JP2008124366A (ja) * | 2006-11-15 | 2008-05-29 | Tokyo Electron Ltd | 減圧乾燥装置 |
JP2008197374A (ja) * | 2007-02-13 | 2008-08-28 | Ulvac Japan Ltd | 真空チャンバ、ロードロックチャンバ、及び処理装置 |
JP2008311250A (ja) * | 2007-06-12 | 2008-12-25 | Tokyo Electron Ltd | リフローシステムおよびリフロー方法 |
Also Published As
Publication number | Publication date |
---|---|
KR101591088B1 (ko) | 2016-02-02 |
TW201028629A (en) | 2010-08-01 |
KR20100086399A (ko) | 2010-07-30 |
CN101789358A (zh) | 2010-07-28 |
JP5274275B2 (ja) | 2013-08-28 |
TWI452251B (zh) | 2014-09-11 |
CN101789358B (zh) | 2014-02-19 |
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